# Power MOSFET, N Channel, 100 V, 42 A, 0.018 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2468038/)

**URL**: https://novapart.co/products/IRFR3710ZTRPBF/power-mosfet-n-channel-100-v-42-a-0018-ohm-to
**SKU**: IRFR3710ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6250
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468038/)

IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF ~~a~~ 

## ~~Cinfin eon~~ 

HEXFET[® ] Power MOSFET 

## **Features** 

- Advanced Process Technology 

- Ultra Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

- Multiple Package Options 

- Lead-Free 

## **Description** 

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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VDSS  100V<br>RDS(on) 18m <br>ID  42A<br>—-—<br>D<br>D<br>S  S<br>D<br>G  G<br>D- Pak  I- Pak<br>IRFR3710ZPbF  IRFU3710ZPbF<br>I-Pak Lead form 701<br>IRFU3710Z-701PbF<br>Refer to page 11 for package outline<br>**----- End of picture text -----**<br>


||**G**||||**D**|**S**|
|---|---|---|---|---|---|---|
||Gate||||Drain<br>Source||
||||||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>IRFU3710ZPbF<br>I-Pak<br>Tube<br>75<br>IRFU3710ZPbF<br>IRFR3710ZPbF<br>D-Pak<br>Tube<br>75<br>IRFR3710ZPbF<br>Tape and Reel Left<br>3000<br>IRFR3710ZTRLPbF<br>**Orderable Part Number**<br>~~re~~|||||||
|**Absolute Maximum Ratings **|||||||
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>56<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>39<br>ID @TC= 25°C<br>Continuous Drain Current, VGS @10V(Package Limited)<br>42<br>A<br>~~a~~<br>~~——————~~|||||||
|IDM|Pulsed Drain Current||||220||
|PD@TC= 25°C|Maximum Power Dissipation||||140|W|
|Linear Derating Factor<br>0.95<br>VGS<br>Gate-to-Source Voltage<br>± 20<br>EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>150<br>EAS(Tested)<br>Single Pulse Avalanche EnergyTested Value<br>200<br>IAR<br>Avalanche Current<br>See Fig.12a, 12b, 15, 16<br>EAR<br>Repetitive Avalanche Energy <br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>~~——======_—~~<br>~~pf~~||||||W/°C<br>V<br>mJ<br>A<br>mJ<br>°C|
|**Thermal Resistance**|**Thermal Resistance**||||||
|**Symbol **|**Parameter **||**Typ. **<br>**Max.**|||**Units**|
|RJC|Junction-to-Case|||–––<br>1.05|||
|RJA|Junction-to-Ambient(PCB Mount) |||–––<br>50||°C/W|
|RJA|Junction-to-Ambient|||–––<br>110|||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>~~Ge~~|**Min.**<br>~~Ge~~|**Typ. Max. Units**|**. Max. Units**<br>~~OG~~|**. Max. Units**<br>~~OG~~|**Conditions**<br>~~OG~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~GG~~|Drain-to-Source Breakdown Voltage<br>~~GG~~|100<br>~~GG~~<br>~~GG~~|–––<br>~~GG~~<br>~~GG~~|–––<br>~~GG~~<br>~~GG~~|V<br>~~GG~~<br>~~GG~~|VGS =0V, ID =250µA<br>~~GG~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~Ce~~|Breakdown Voltage Temp. Coefficient<br>~~Ce~~|––– 0.088<br>~~Ce~~<br>~~GG~~|––– 0.088<br>~~Ce~~<br>~~GG~~|–––<br>~~Ce~~<br>~~GG~~|V/°C Reference to 25°C<br>~~Ce~~<br>~~GG~~|V/°C Reference to 25°C,ID= 1mA<br>~~Ce~~|
|RDS(on) <br>~~pe~~|Static Drain-to-Source On-Resistance<br>~~pe~~|–––<br>~~GG~~<br>~~pe~~|15<br>~~GG~~<br>~~pe~~|18<br>~~GG~~<br>~~pe~~|m<br>~~GG~~<br>~~pe~~|VGS= 10V,ID= 33A<br>~~pe~~|
|VGS(th)<br>~~pe~~|Gate Threshold Voltage<br>~~pe~~|2.0<br>~~pe~~|–––<br>~~pe~~|4.0<br>~~pe~~<br>~~OO~~|V<br>~~pe~~<br>~~OO~~|VDS= VGS,ID= 250µA<br>~~pe~~|
|gfs<br>~~pe~~<br>~~GG~~<br>~~a~~|Forward Trans conductance<br>~~pe~~<br>~~GG~~<br>~~———~~<br>~~a~~|39<br>~~pe~~<br>~~GG~~<br>~~———~~|–––<br>~~pe~~<br>~~GG~~<br>~~———~~|–––<br>~~pe~~<br>~~GG~~<br>~~OO~~<br>~~———~~|S<br>~~pe~~<br>~~GG~~<br>~~OO~~|VDS= 25V, ID= 33A<br>~~pe~~<br>~~GG~~<br>~~pO~~|
|IDSS<br>~~rr~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~rr~~<br>~~———~~<br>~~a~~|–––<br>~~rr~~<br>~~———~~|–––<br>~~rr~~<br>~~———~~|20<br>~~OO~~<br>~~rr~~<br>~~———~~|µA<br>~~OO~~<br>~~rr~~|VDS= 100V, VGS= 0V<br>~~rr~~<br>~~pO~~|
|||–––<br>~~rr~~<br>~~———~~|–––<br>~~rr~~<br>~~———~~|250<br>~~rr~~<br>~~———~~||VDS =100V,VGS =0V,TJ =125°C<br>~~rr~~<br>~~pO~~|
|IGSS<br>~~rr~~<br>~~a~~<br>~~A~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~rr~~<br>~~———~~<br>~~a~~<br>~~A~~|–––<br>~~rr~~<br>~~———~~|–––<br>~~rr~~<br>~~———~~|200<br>~~rr~~<br>~~———~~|nA<br>~~rr~~|VGS =20V<br>~~rr~~<br>~~pO~~|
||Gate-to-Source Reverse Leakage<br>~~———~~<br>~~a~~<br>~~A~~|–––<br>~~———~~|~~———~~|-200<br>~~———~~||VGS = -20V<br>~~pO~~|
|Qg<br>~~es~~|Total Gate Charge|–––|69|100|nC|ID= 33A<br>VDS= 80V<br>VGS= 10V|
|Qgs<br>~~es~~<br>~~es~~|Gate-to-Source Charge|–––|15|–––|||
|Qgd<br>~~es~~<br>~~ee~~|Gate-to-Drain(‘Miller’)Charge|–––|25|–––|||
|td(on)<br>~~es~~<br>~~ee~~|Turn-On Delay Time|–––|14|–––|ns|VDD= 50V<br>ID= 33A<br>RG= 6.8<br>VGS= 10V|
|d(on)<br>tr<br>~~ee~~|RiseTime|–––|43|–––|||
|td(off)<br>~~CO~~|Turn-Off DelayTime<br>~~CO~~|–––<br>~~CO~~|53<br>~~CO~~|–––<br>~~CO~~|||
|d(off)<br>tf<br>~~a~~|Fall Time<br>|–––|42|–––|||
|LD<br>~~pf~~|Internal Drain Inductance<br>~~pf~~|–––<br>~~ff~~|4.5<br>~~ff~~|–––<br>~~ff~~|nH<br>~~ff~~<br>~~ee~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and centerofdie contact<br>~~ee~~|
|LS<br>~~pf~~<br>~~es~~|Internal Source Inductance<br>~~pf~~|–––<br>~~ff~~|7.5<br>~~ff~~|–––<br>~~ff~~|||
|Ciss<br>~~es~~<br>~~ee~~|Input Capacitance|–––|2930|–––|pF <br>~~ee~~<br>~~O~~s|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee~~|
|Coss<br>~~es~~<br>~~ee~~|OutputCapacitance|–––|290|–––|||
|Crss<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br><br>|–––<br><br>|180<br><br>|–––<br>~~O~~<br>|||
|Coss<br>~~es~~<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|1200<br>~~ee~~<br>|–––<br>~~eeO~~<br>||VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz<br>~~ee~~|
|Coss<br><br>~~aGe~~|Output Capacitance<br><br>~~Ge~~|–––<br><br>~~Ge~~|180<br><br>~~Ge~~|–––<br>~~O~~<br>~~Ge~~||VGS= 0V, VDS= 80V, ƒ = 1.0MHz|
|Cosseff.<br><br>~~a Ge~~<br>~~pe~~|Effective Output Capacitance<br><br>~~Ge~~<br>~~pe~~|–––<br><br>~~Ge~~<br>~~pe~~|430<br><br>~~Ge~~<br>~~pe~~|–––<br>~~O~~<br>~~Ge~~<br>~~pe~~||VGS= 0V, VDS= 0V to 80V|



|~~pe~~|**Parameter **<br>~~pe~~|**Min.**<br>~~pe~~|**Typ. M**<br>~~pe~~|**. Max.**<br>~~pe~~|**Units**<br>~~pe~~|**Conditions**<br>~~pe~~|
|---|---|---|---|---|---|---|
|IS<br>~~es~~|Continuous Source Current<br>(Body Diode)<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|56<br>~~es~~|A<br>~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~es~~<br>Z<br>~~pO~~|
|ISM<br>~~es~~<br>~~i~~<br>~~pO~~|Pulsed Source Current<br>(Body Diode)<br>~~es~~<br>~~pO~~|–––<br>~~es~~<br>~~pO~~|–––<br>~~es~~|220<br>~~es~~|||
|VSD<br>~~pO~~<br>~~$$~~|Diode Forward Voltage<br>~~pO~~<br>~~$$~~|–––<br>~~pO~~<br>~~+~~|–––<br>~~+~~|1.3<br>~~+4~~|V<br>~~+4~~|TJ =25°C,IS=33A,VGS =0V<br>~~pO~~<br>~~+4~~|
|trr<br>~~pO~~<br>~~$$~~|Reverse Recovery Time<br>~~pO~~<br>~~$$~~|–––<br>~~pO~~<br>~~+~~|35<br>~~+~~|53<br>~~+4~~|ns<br>~~+4~~|TJ= 25°C ,IF= 33A, VDS= 50V<br>nC   di/dt = 100A/µs<br>~~pO~~<br>~~+4~~|
|Qrr<br>~~$$~~<br>~~a~~|Reverse RecoveryCharge<br>~~$$~~|–––<br>~~+~~|41<br>~~+~~|62<br>~~+4~~|nC   di/dt = 100A/<br>~~+4~~||
|ton<br>~~$$~~|Forward Turn-On Time<br>~~$$~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~+ +4~~|||||



**Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

-  starting  TJ = 25°C, L = 0.28mH, RG = 25, IAS = 33A,VGS =10V. Part not recommended for use above this value. 

-  Pulse width 1.0ms; duty cycle  2%. 

 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

 This value determined from sample failure population. 100% tested to this value in production. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

-  Refer to D-Pak package for Part Marking, Tape and Reel information 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>6.0V 6.0V<br>5.0V 5.0V<br>4.8V 4.8V<br>4.5V 100 4.5V<br>4.3V 4.3V<br>BOTTOM 4.0V BOTTOM 4.0V<br>100<br>4.0V<br>10<br>10<br>1<br>4.0V<br>Z- 60µs PULSE WIDTH ci:ES 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 0.1<br>0.1 1 10 100 0.1 1 10 100<br>fil —<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>1000 100<br>T J  = 175°C 80 TJ = 25°C<br>100<br>60<br>lamina! = CLYeT<br>T = 175°C<br>J<br>40<br>10 HO) LE<br>T = 25°C<br>J<br>20<br>V = 25V<br>DS<br>VDS = 10V<br>60µs PULSE WIDTH<br>1.0 HAVEN Eee<br>0<br>2 3 4 5 6 7 8 9 10 11 12 13 14 15 16<br>0  @eppe 0 10 20 30 40 50 60 70 80<br>VGS, Gate-to-Source Voltage (V) ID,Drain-to-Source Current (A)<br>Fig. 3  Typical Transfer Characteristics Fig. 4  Typical Forward Transconductance<br>vs. Drain Current<br>3  2016-5-31<br>a<br>Gfs, Forward Transconductance (S)<br>)<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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IRFR/U3710ZPbF & IRFU3710Z-701PbF<br>Qin<br>100000 12.0<br>VGS   = 0V,       f = 1 MHZ I = 33A<br>Ciss    = C gs + Cgd,  C ds SHORTED D<br>Crss    = Cgd  10.0 V DS = 80V<br>C = C + C<br>10000 | oss   ds  gd V = 50V<br>DS<br>8.0 VDS= 20V<br>C<br>| iss | ) ORE<br> TOM man oy,<br>1000 6.0<br>co Ctr YG<br>C<br>oss<br>C 4.0<br>rss<br>CTA a eer<br>100<br>2.0<br>Bat aM PEELAREER<br>10 0.0<br>1 10 100 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000.00<br>100.00 T = 175°C<br>J<br>aaEEI<br>10.00<br>T = 25°C<br>a J<br>1.00<br>V = 0V<br>GS<br>0.10<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>10<br>1msec<br>1<br>Tc = 25°C<br>Tj = 175°C 10msec<br>Single Pulse<br>0.1<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode **Fig 8.** Maximum Safe Operating Area Forward Voltage 4 2016-5-31 ~~=.~~ 

IRFR/U3710ZPbF & IRFU3710Z-701PbF 

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60<br>50 Limited By Package<br>40<br>30<br>PPT<br>20<br>HN<br>10<br>PN<br>Pee}<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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3.0<br>I = 56A<br>D<br>V = 10V<br>GS<br>2.5<br>2.0<br>attr<br>1.5<br>ATT<br>1.0<br>ALL<br>GEE<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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10<br>1<br>D = 0.50 ST<br>0.20<br>0.1 0.10<br>0.050.02 rneeeereae _ a R 1 R1 mn R 2 R2 R 3R Util 3 Ri (°C/W)  | i (sec) il<br>0.01 0.01 J J C C 0.576  0.000540<br>1 1 2 2  3 3 0.249  0.001424<br>0.001 SINGLE PULSE Ci=  Ci=  i  Ri iRi 0.224  0.007998<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>sie ton=|<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## ~~Cen~~ 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>o f tp rt 0.01<br>J<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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IAS<br>**----- End of picture text -----**<br>


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700<br>ID<br>TTT<br>600 TOP         3.4A<br>4.8A<br>500 BOTTOM 33A<br>400<br>300<br>VEACH<br>200<br>SE<br>100<br>eae NCUREEEE<br>0<br>CLT SSRELD<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

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4.0<br>3.0<br>ID = 250µA<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01<br>eeu TMTMT assuming  Tj = 25°C due to<br>avalanche losses<br>10 0.05<br>a<br>0.10<br>1<br>eeeTT TO<br>i<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

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200<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>ID = 33A<br>150<br>qT<br>100<br>SOT<br>50<br>SN<br>TASS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC** 

**Iav = 2**  **T/ [1.3·BV·Zth]** 

**EAS (AR) = PD (ave)·tav** 

2016-5-31 

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~~LT~~ 

## IRFR/U3710ZPbF & IRFU3710Z-701PbF ~~_———_— £ |.~~ 

**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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Cinfineon 

IRFR/U3710ZPbF & IRFU3710Z-701PbF 

## **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

**==> picture [402 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL A<br>OR DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO<br>PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT QUALIFIED TO THE<br>ASSEMBLY<br>LOT CODE yt CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


**Notes:** 

> **1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/datasheets/data/auirfr3710z.pdf 2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/** 

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2016-5-31 

Cinfineon 

## IRFR/U3710ZPbF & IRFU3710Z-701PbF 

## **I-Pak (TO-251AA) Package Outline** Dimensions are shown in millimeters (inches) 

## **I-Pak (TO-251AA) Part Marking Information** 

**==> picture [353 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001<br>56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A" he v a<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL A a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>i<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/** 

**2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/** 

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Cinfineon 

IRFR/U3710ZPbF & IRFU3710Z-701PbF 

**I-Pak Leadform Option 701 Package Outline**  Dimensions are shown in millimeters (inches) 

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2016-5-31 

IRFR/U3710ZPbF & IRFU3710Z-701PbF 

## ~~Ceo~~ 

**D-Pak (TO-252AA) Tape &** Reel Information Dimensions are shown in millimeters (inches) 

**==> picture [385 x 353] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm<br>NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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2016-5-31 

|<br>IRFR/U3710ZPbF & IRFU3710Z-701PbF<br>**Qualification Information† **<br>~~—————_—~~<br>~~=—eeeeeststsws—~~<br>~~fine~~|<br>IRFR/U3710ZPbF & IRFU3710Z-701PbF<br>**Qualification Information† **<br>~~—————_—~~<br>~~=—eeeeeststsws—~~<br>~~fine~~|<br>IRFR/U3710ZPbF & IRFU3710Z-701PbF<br>**Qualification Information† **<br>~~—————_—~~<br>~~=—eeeeeststsws—~~<br>~~fine~~|<br>IRFR/U3710ZPbF & IRFU3710Z-701PbF<br>**Qualification Information† **<br>~~—————_—~~<br>~~=—eeeeeststsws—~~<br>~~fine~~|<br>IRFR/U3710ZPbF & IRFU3710Z-701PbF<br>**Qualification Information† **<br>~~—————_—~~<br>~~=—eeeeeststsws—~~<br>~~fine~~|
|---|---|---|---|---|
||**Qualification Level**||Industrial<br>(per JEDEC JESD47F)††||
|||D-Pak|MSL1||
||**Moisture Sensitivity Level**|I-Pak|(per JEDEC J-STD-020D)††||
||**RoHS Compliant**||Yes||



- Qualification standards can be found at Infineon’s web site www.infneon.com 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|5/31/2016||Updated datasheet with corporate template.||
|||Added disclaimer on lastpage.||



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, 

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

|**Published by**<br>**Infineon Technologies AG**<br>Edition 2016-04-19|**IMPORTANT NOTICE**<br>;<br>;<br>;<br>,<br>;<br>,<br>The information given in thisdocument shall in no<br>event be regarded as a guarantee of conditions or<br>characteristics (“Beschaffenheitsgarantie”) .|contact your nearest Infineon Technologies office<br>(www.infineon.com).<br>For further information on the product, technology,<br>delivery terms and conditions and prices please|
|---|---|---|
|**81726 Munich, Germany**|||
|**© 2016 Infineon Technologies AG.**<br>**All Rights Reserved.**|With respect to any examples, hints or any typical<br>Technologies<br>hereby<br>disclaims<br>any<br>and<br>all<br>values<br>stated<br>herein<br>and/or<br>any<br>information<br>regarding the application of the product, Infineon|Please note that this product is not qualified<br>according to the AEC Q100 or AEC Q101 documents<br>.<br>;<br>;<br>ofthe Automotive Electronics Council.|
||warranties<br>and<br>liabilities<br>of any<br>kind,<br>including||
|Doyou have a question about this|without limitation warranties of non-infringement|**WARNINGS**|
|**document?**|of intellectual property rights of any third party.|Due to technical requirements products may|
|**Email:**erratum@infineon.com||contain dangerous substances. For information on|
||**is subject to customer’s compliance with its**<br>In addition, any information given in this document|Infineon Technologies office.<br>__the types in question please contact your nearest|
||obligations<br>stated<br>in<br>this<br>document<br>and<br>any||
|**Document reference**<br>**ifx1**|applicable<br>legal<br>requirements,<br>norms<br>and<br>standards concerning customer’s products and any<br>use of the product of Infineon Technologies in<br>customer’s applications.|Except as otherwise explicitly approved by Infineon<br>**Infineon Technologies’ products may**not be used in<br>Technologies<br>in<br>a<br>written<br>document<br>signed<br>by<br>authorized representatives of Infineon Technologies,<br>any applications where a failure of the product or|
|||any consequences of the use thereof can reasonably|
||The data contained in this document is exclusively|be expected to result in personal injury.|
||intended for technically trained staff. It is the||
||**responsibility of customer’s technical departments**||
||to evaluate the suitability of the product for the||



13 

2016-5-31 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR3710ZTRPBF/power-mosfet-n-channel-100-v-42-a-0018-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr3710ztrpbf/mosfet-n-ch-100v-42a-to-252aa/dp/2468038)
---

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