# Power MOSFET, N Channel, 30 V, 61 A, 0.0082 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725963/)

**URL**: https://novapart.co/products/IRFR3708TRPBF/power-mosfet-n-channel-30-v-61-a-00082-ohm-to
**SKU**: IRFR3708TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4250
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 87W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 87W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0082ohm |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 61A |
| Drain Source On State Resistance | 0.0082ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725963/)

## **SMPS MOSFET** 

## **Applications** 

High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use 

|**VDSS**<br>aee<br>ee|**RDS(on) max**<br>ee<br>ee|**ID**|
|---|---|---|
|**30V**<br>ee|**12.5m**Ω<br>ee|**61A**|



High Frequency Buck Converters for Computer Processor Power Lead-Free 

## **Benefits** 

, Ultra-Low Gate Impedance 

Very Low RDS(on) at 4.5V VGS 

Fully Characterized Avalanche Voltage and Current 

D-Pak I-Pak IRFR3708            IRFU3708 

## **Absolute Maximum Ratings** 

a **Symbol Parameter Max. Units** VDS Drain-Source Voltage 30 V ee VGS                                     Gate-to-Source Voltage ± 12                                   V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 61 ~~eeaee ©~~ ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 51 A ~~**a** eee~~ IPDMD @TA = 25°C Pulsed Drain CurrenMaximum Power Dissipation 24487 ~~ae~~ W ~~a~~ PD @TA = 70°C Maximum Power Dissipation 61 W Linear Deratin ~~a~~ g Factor                                                                     0.58                               W/°C ~~a~~ TJ , TSTG ~~ef~~ Junction and Storage Temperature Range -55  to + 175 °C 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.73||
|RθJA|Junction-to-Ambient (PCB mount)*|–––|50|°C/W|
|RθJA|Junction-to-Ambient|–––|110||



When mounted on 1" square PCB (FR-4 or G-10 Material) . 

For recommended footprint and soldering techniques refer to application note #AN-994 

> Notes ® hrough  are on page 9 ® 

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## IRFR/U3708PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>es|**Min.**<br>es<br>ss|**Typ.**<br>es<br>ss|**Max. Units**<br>es<br>ss<br>~~GO GG~~|**Max. Units**<br>es<br>~~GG~~|**Max. Units**<br> **Conditions**<br>es<br>~~GG~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>Gn|30<br>ss<br>Gn<br>~~Gs~~|–––<br>ss<br>Gn<br>~~Gs~~|–––<br>ss<br>Gn<br>~~GO GG~~<br>~~GsGO~~|V<br>Gn<br>~~GG~~|VGS= 0V, ID= 250µA<br>Gn<br>~~GG~~|
|∆V(BR)DSS/∆TJ|JBreakdown Voltage Temp. Coefficient –––     0.028    –––   V/°C    Reference to 25°C, I<br>~~rs~~<br>**|**|–––     0.028    –––   V/°C    Reference to 25°C, I<br>~~rs~~<br>~~Gs~~<br>**|**|–––     0.028    –––   V/°C    Reference to 25°C, I<br>~~rs~~<br>~~Gs~~<br>|–––     0.028    –––   V/°C    Reference to 25°C, I<br>~~GO GG~~<br>~~rs~~<br>~~GsGO~~<br>|–––     0.028    –––   V/°C    Reference to 25°C, I<br>~~GG~~<br>~~rs~~|–––     0.028    –––   V/°C    Reference to 25°C, ID= 1mA<br>~~GG~~<br>~~rs~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>**|**<br>~~|~~|–––<br>~~Gs~~<br>**|**|8.5<br>~~Gs~~<br>|12.5<br>~~Gs GO~~<br>|mΩ|VGS= 10V, ID= 15A|
|||–––<br>**|**—|—<br>~~|fT~~|10.0<br>—|—<br>~~fT~~|14.0 <br>—|—<br>~~fT~~||VGS= 4.5V, ID= 12A<br>~~@~~|
|||–––<br>—|—<br>~~|fT~~<br>~~Gn~~|15.0<br>—|—<br>~~fT~~<br>~~sO~~|30.0<br>—|—<br>~~fT~~<br>~~sO~~||VGS= 2.8V, ID= 7.5A<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~|~~<br>~~es~~<br>~~|~~|0.6<br>~~| fT~~<br>~~es~~<br>~~Gn~~<br>~~|~~|–––<br>~~fT~~<br>~~es~~<br>~~sO~~|2.0<br>~~fT~~<br>~~es~~<br>~~sO~~|V<br>~~es~~<br>~~EE~~|VDS= VGS, ID= 250µA<br>~~@~~<br>~~es~~<br>~~EE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~|~~<br>~~|~~|–––<br>~~Gn ~~<br>~~|~~<br>~~|~~|–––<br> ~~sO~~<br>~~|~~|20<br>~~sO~~<br>~~|~~|µA<br>~~|~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~|~~<br>~~EE~~|
|||–––<br>~~|~~<br>~~|~~|–––<br>~~|~~|100<br>~~|~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~|~~<br>~~EE~~<br>~~PT~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~|~~<br>~~PO~~|–––<br>~~|~~<br>~~PO~~|–––<br>~~PO~~|200<br>~~PO~~|nA<br>~~EE~~|VGS= 12V<br>~~EE~~|
||Gate-to-Source Reverse Leakage|–––|–––|-200||VGS= -12V|



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>ee|**Parameter**<br>ee|**Min.**<br>ee<br>ee|**Typ. **<br>ee<br>ee|**Max.**<br>ee|**Max.**<br>ee|**Units**<br>ee|**Conditions**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|---|---|---|
|gfs|Forward Transconductance<br>es||49<br>ee <br>es|–––<br> ee<br>es|–––<br>es||S<br>es|VDS= 15V, ID= 50A|||
|Qg|Total Gate Charge<br>~~a~~||–––<br>~~a~~|24<br>~~a~~|–––                I<br>~~a~~||–––                I<br>nC<br>~~a~~<br>~~ee~~<br>ee<br>|–––                ID= 24.8A<br>VDS= 15V<br>VGS= 4.5V<br>©)|||
|Qgs|Gate-to-Source Charge<br>~~ee~~||–––<br>~~ee~~|6.7<br>~~ee~~|–––<br>~~ee~~||||||
|Qgd<br>Ps|Gate-to-Drain ("Miller") Charge<br>a<br>||–––<br>|5.8<br>|–––<br>||||||
|gd<br>Qoss<br>Ps<br>es|Output Gate Charge<br>a<br>ee<br>||–––<br>ee<br>|14<br>ee<br>|21<br>ee<br>|||VGS= 0V, ID= 24.8A, VDS= 15V<br>©)|||
|td(on)<br>Ps<br>es<br>ee|Turn-On Delay Time<br>a<br>ee<br>ee<br>||–––<br>ee<br>ee<br>|7.2<br>ee<br>ee<br>|–––<br>ee<br>ee<br>||ns<br>ee<br>ee<br>**ee**<br>~~a~~|VDD= 15V<br>ID= 24.8A<br>RG= 0.6Ω<br>VGS= 4.5V<br>©)|||
|d(on)<br>tr<br><br>es<br>ee<br>Ps|Rise Time<br>ee<br>ee<br>**ee**<br>||–––<br>ee<br>ee<br>**ee**<br>|50<br>ee<br>ee<br>**ee**<br>|–––<br>ee<br>ee<br>**ee**<br>||||||
|td(off)<br><br>ee<br>Ps|Turn-Off Delay Time<br>ee<br>**ee**<br>||–––<br>ee<br>**ee**<br>|17.6<br>ee<br>**ee**<br>|–––<br>ee<br>**ee**<br>||||||
|tf<br><br>Ps~~a~~|Fall Time<br>**ee**<br>~~a~~||–––<br>**ee**<br>~~a~~|3.7<br>**ee**<br>~~a~~|–––<br>**ee**<br>~~a~~||||||
|Ciss<br>~~a~~<br>~~es~~|Input Capacitance<br>~~a~~<br>~~a~~||–––<br>~~a~~<br>~~a~~|2417<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~||pF<br>~~a~~<br>~~a~~|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz|||
|Coss<br>~~es~~|Output Capacitance<br>~~a~~||–––<br>~~a~~|707<br>~~a~~|–––<br>~~a~~||||||
|Crss<br>~~es~~|Reverse Transfer Capacitance<br>~~a~~||–––<br>~~a~~|52<br>~~a~~|–––<br>~~a~~||||||
|**Avalanche Characteristics**<br>eser|||||||||||
|**Symbol**<br>es||**Parameter**<br>er||||**Typ.**<br>er|||**Max.**<br>er|**Units**<br>er|
|EAS<br>es<br>I<br>a||Single Pulse Avalanche Energy<br>er<br>I||||–––<br>er<br>I|||213<br>er<br>I|mJ<br>er<br>I|
|IAR<br>a||Avalanche Current||||–––|||62|A|
|**Diode Characteristics**<br>a<br>RR|||||||||||
|**Symbol**<br>RR|**Parameter**<br>||**Min. **<br>|**Typ. **<br>|**Max.**<br>||**Units**|**Conditions**|||
|IS<br>RRa<br>ee|Continuous Source Current<br>(Body Diode)<br>ee<br>ee||–––<br>ee<br>ee|–––<br>ee<br>ee|61<br>ee<br>ee||ee|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|||
|ISM<br>ee|Pulsed Source Current<br>(Body Diode)<br>ee||–––<br>ee|–––<br>ee|244<br>ee||||||
|VSD<br>a<br>—————|Diode Forward Voltage<br>|<br>—————||–––<br>|<br>||0.88<br>||1.3||V<br>ee|TJ= 25°C, IS= 31A, VGS= 0V<br>®|||
||||–––<br>|<br>||0.80<br>|<br>ee|–––<br>ee|||TJ= 125°C, IS= 31A, VGS= 0V<br>®|||
|trr<br>a<br>—————|Reverse Recovery Time<br>|<br>—————<br>Rs||–––<br>|<br>||41<br>|<br>ee|62<br>ee||ns<br>ee|TJ= 25°C, IF= 31A, VR=20V<br>di/dt = 100A/µs<br>®<br>®|||
|Qrr<br>—————|Reverse Recovery Charge<br>—————<br>Rs||–––|64<br>ee|96<br>ee||nC<br>ee||||
|trr<br>—————<br>Se|Reverse Recovery Time<br>—————<br>Rs<br>Se||–––|43<br>ee|65<br>ee||ns<br>ee|TJ= 125°C, IF= 31A, VR=20V<br>di/dt = 100A/µs<br>®|||
|Qrr|Reverse Recovery Charge||–––|70|105||nC||||



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## IRFR/U3708PbF 

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1000<br>VGS<br>eepfee ee TOP          10.0V                  5.0V                  4.5V l<br>                  4.0V<br>Lt | eer                   3.5V |<br>100 ||) Zao                   3.3V |<br>                  3.0V<br>rt BOTTOM    2.7V |<br>a ill 2.7V<br>my A a |<br>Meh FH<br>10 ” ZO<br>a ee ee ee<br>a eee eee ll<br>20µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>eeaeeeeeee TOP          10.0V                  5.0V                  4.5V l<br>                  4.0V<br>a ee |<br>                  3.5V<br>100 UU aScant                   3.3V |<br>                  3.0V<br>F UU hgh BOTTOM    2.7V !<br>2.7V<br>/— ae<br>Y | | gar | a el<br>Yo<br>| |g gill ee<br>10 ei<br>TE |<br>a<br>El CCA<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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 1000 2.5<br>ID = 61A<br>EEa———————essees es eeseee ee eee Po PULTETE<br>-—}—_}arf | a| +--+| ee[| | +- 4 2.0 ELLEPEELE TEE EEE<br>°<br>| | T  = 25  CJ | t-| rh<br>1.5<br> 100 a a 4,oa T  = 175  CJ I ° ee / *| a ELLE Lep<br>a — Ey<br>Ee — 1.0 ral<br>+ an<br>es 4} ++ ++ + LTTE| Ler<br>A<br>0.5<br>ee |<br>V      = 15VDS<br>20µs PULSE WIDTH VGS = 10V<br> 10 0.0<br>2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3500<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>Crss = Cgd<br>2800 Poa Coss = Cds + Cgd<br>Ciss<br>a<br>2100<br>ll<br>EEEN<br>1400 ell<br>Coss<br>e t |<br>a<br>700<br>a<br>a C ee rss ll<br>0<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 1000<br> 100 T  = 175  CJ ° | Le T | |<br>pa sses<br>T  = 25  CJ °<br> 10 _——ny 4 )<br>5<br> 1<br>+<br>—he—————— — V      = 0 V GS<br>0.1<br>0.2 0.8 1.4 2.0 2.6<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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10<br>ID = 24.8A<br>VDS = 15V<br>8 Sp PT tty speKL<br>Pt tT | tT AL |<br>6<br>Pt tT tT | et<br>Pi tT tT tTAe<br>4 PEEPi yA<br>tA<br>2<br>| pte<br>0 PAViti| tt {tit t {i{|<br>0 10 20 30 40 50<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>i ed ok  tc eer cs ek ee 10us |<br> 100 FILA<br>100us<br>See r<br>Tt Baill<br>ce Ca<br>1ms<br> 10 e a<br>ee ee 10ms<br> T TCJ = 25  C= 175  C° °<br>e  Single Pulse s 1et aille<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


## **Fig 8.** Maximum Safe Operating Area 

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70<br>LIMITED BY PACKAGE<br>60 L | | | | | Ves DUT<br>Soe ,<br>50 PTref ff pL Re a -<br>Pt tTTHATPy TP pTEEEyETEy Ty .<br>40 Pty Th fT yet TT )} 10V<br>≤ 1<br>30 rPiPty| TT| ey| WEUATTTTpdsTT TNNN| [TT] | ofTI Pulseo_oWidth ≤ 0.1 % us r<br>Fig 10a.   Switching Time Test Circuit<br>20 ee ee<br>10 PiPityPitytT |ey| tT| dTTtTt dE cErTerrTEy|TNdT TY V90%DS Vfi<br>0<br>25 50 75 100 125 150 175<br>Pi TT T   , Case TemperatureC  Tere Tt (  C)° 10% . /\<br>VGS |\« le >|ee,pl< ><br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 10<br>a a ee ee Oe Oe Oe QQ 0 GN GGG OG GOO<br>a a ee ee ee ee<br>aD0ee 0 0<br>ES<br> 1 e D = 0.50 e emer ea<br>en ee naan<br>0.20<br>S er<br>ee et a ee<br>0.10<br>0.05 PDM<br>0.1 r oe ir iil<br>0.02 SINGLE PULSE t1<br>0.01 (THERMAL RESPONSE)<br>ee a a ee ee OOO OOS GG OOO t2<br>— | | Tit<br>Notes:<br>1. Duty factor D = t   / t1 2<br>Ce ohhh 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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0.025 0.017<br>0.015<br>e e eee<br>0.020<br>S y EE<br>0.013<br>0.015<br>VGS = 4.5V 0.011<br>0.010 eA ET ID = 31A<br>0.009<br>as<br>VGS = 10V<br>| PN<br>Ty) 6RE<br>0.005 0.007<br>0 50 100 150 200 250 300 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>ID , Drain Current ( A ) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current<br>Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG 600 ID<br>VGS TOP 10A<br>3mA Charge 20.7A<br>IG ID 480 BOTTOM 24.8A<br>Current Sampling Resistors<br>23)oe 7 | pCLO a<br>Fig 14a&b.    Gate Charge Test Circuit 360<br>and Waveform<br>PARC<br>240 SaaNSSSeee<br>15V SON<br>120 PSSST<br>V(BR)DSS<br>tp VDS L DRIVER<br>_. SSS<br>R G D.U.T + 0<br>I AS | ae 20V tp IAS 0.01Ω - [V][DD] A 25 Pape Starting T  , Junction Temperature50 J 75 SBS 100 125 SSE 150(  C)° 175<br>Fig 15a&b.   Unclamped Inductive Test circuit Fig 15c.   Maximum Avalanche Energy<br>and Waveforms Vs. Drain Current<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br> )<br>ΩRDS ( on ) , Drain-to-Source On Resistance (  )<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** On-Resistance Vs. Gate Voltage 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>om | LINE A<br>Note: "P" in assembly line position ASSEMBLY e a l<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TOR PoiGA P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY e a t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 YEAR 9 =  1999DATE CODEWEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>PART NUMBER<br>INTERNATIONAL a<br>RECT IFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>ee ooo |<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>_<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>**----- End of picture text -----**<br>


1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>**----- End of picture text -----**<br>


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16 mm<br>**----- End of picture text -----**<br>


NOTES : 

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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. © Starting TJ = 25°C, L = 0.7 mH RG = 25Ω, IAS = 24.8 A. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information12/04 

www.irf.com 

9 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR3708TRPBF/power-mosfet-n-channel-30-v-61-a-00082-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfr3708trpbf/mosfet-n-ch-30v-61a-to-252aa/dp/2725963)
---

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