# Power MOSFET, N Channel, 30 V, 56 A, 9500 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725962/)

**URL**: https://novapart.co/products/IRFR3707ZTRPBF/power-mosfet-n-channel-30-v-56-a-9500-ohm-to-252aa
**SKU**: IRFR3707ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2700
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 50W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 9500µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725962/)

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free 

PD - 954438 IRFR3707ZPbF IRFU3707ZPbF HEXFET ® Power MOSFET **VDSS RDS(on) max Qg 30V 9.5m 9.6nC** ~~—_}—t~~ 

## **Benefits** 

> ) Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

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D-Pak I-Pak<br>IRFR3707ZPbF IRFU3707ZPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**<br>~~ee~~|**Max.**<br>~~ae~~|**Units**<br>~~ae~~|
|---|---|---|---|
|VDS<br>~~TT~~|Drain-to-Source Voltage<br>~~a~~<br>~~TT~~<br>~~ee~~|30<br>~~a~~<br>~~ae~~|V<br>~~ae~~|
|VGS<br>~~TT~~<br>~~———~~|Gate-to-Source Voltage<br>~~TT~~<br>~~O_.-,.,-~~<br>~~ee~~<br>~~———~~|± 20<br>~~O_.-,.,-~~<br>~~ae~~||
|ID@ TC= 25°C<br>~~TT~~<br>~~———~~|Continuous Drain Current,VGS@ 10V<br>~~TT~~<br>~~ee~~<br>~~———~~|56<br>~~ae~~|A<br>~~ae~~|
|ID@ TC= 100°C<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~———~~<br>~~a~~|39<br>~~ae~~||
|IDM<br>~~———~~<br>~~a~~<br>~~TT~~|Pulsed Drain Current<br>~~———~~<br>~~a~~<br>~~TT~~<br>~~Ms.'-jNT]VT#M#P~T.”TvTWT—.1]~~|220<br>~~Ms.'-jNT]VT#M#P~T.”TvTWT—.1]~~||
|PD@TC= 25°C<br>~~———~~<br>~~a~~<br>~~TT~~|Maximum Power Dissipation<br>~~———~~<br>~~a~~<br>~~TT~~<br>~~Ms.'-jNT]VT#M#P~T.”TvTWT—.1]~~<br>~~SS~~|50<br>~~Ms.'-jNT]VT#M#P~T.”TvTWT—.1]~~<br>~~SS~~|W<br>~~SS~~|
|PD@TC= 100°C<br>~~TT~~|Maximum Power Dissipation<br>~~TT~~<br>~~Ms.'-jNT]VT#M#P~T.”TvTWT—.1]~~<br>~~SS~~|25<br>~~Ms.'-jNT]VT#M#P~T.”TvTWT—.1]~~<br>~~SS~~||
||Linear DeratingFactor<br>~~rr~~|0.33<br>~~ee~~|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~rr~~|-55  to + 175<br>~~a~~<br>~~ee~~|°C|
||SolderingTemperature,for 10 seconds<br>~~rr~~|300(1.6mm from case)<br>~~ee~~||



> Notes ® hrough © are on page 11 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~pO~~|Drain-to-Source Breakdown Voltage<br>~~po~~<br>~~pO~~|30<br>~~po~~<br>|–––<br>~~po~~<br>|–––<br>~~po~~<br>|V<br>~~po~~<br>|VGS= 0V, ID= 250µA<br>~~po~~<br>|
|∆ΒVDSS/∆TJ<br>~~pO~~|Breakdown Voltage Temp. Coefficient<br>~~pO~~~~**a**~~|–––<br>|0.023<br>~~———————~~|–––<br>~~———————~~|V/°C<br>~~———————~~|Reference to 25°C, ID= 1mA<br>~~———————~~|
|RDS(on)<br>~~pO~~|Static Drain-to-Source On-Resistance<br>~~pO~~~~**a**~~|–––<br><br>~~|~~|7.5<br>~~———————~~<br>~~|~~|9.5<br>~~———————~~|mΩ<br>~~———————~~|VGS= 10V, ID= 15A<br>~~———————~~<br>~~©~~|
|||–––<br><br>~~|~~|10<br>~~———————~~<br>~~|~~|12.5<br>~~———————~~||VGS= 4.5V, ID= 12A<br>~~———————~~<br>~~©~~|
|VGS(th)<br>|Gate Threshold Voltage<br>~~**a**~~|1.35<br><br>~~|~~|1.80<br>~~———————~~<br>~~|~~|2.25<br>~~———————~~|V<br>~~———————~~|VDS= VGS, ID= 25µA<br>~~———————~~<br>~~©~~<br>~~oo~~|
|∆VGS(th)/∆TJ<br>|Gate Threshold Voltage Coefficient<br>~~**a** ~~|–––<br>|-5.0<br> ~~———————~~|–––<br>~~———————~~|mV/°C<br>~~———————~~||
|IDSS|Drain-to-Source Leakage Current<br>~~——————————~~|–––<br>~~——————————~~|–––<br>~~——————————~~|1.0<br>~~——————————~~|µA<br>~~——————————~~|VDS= 24V, VGS= 0V<br>~~oo~~<br>~~——————————~~|
|||–––<br>~~——————————~~|–––<br>~~——————————~~<br>~~PT~~|150<br>~~——————————~~<br>~~PT~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~——————————~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~——————————~~<br>~~——|~~|–––<br>~~——————————~~<br>~~||~~|–––<br>~~——————————~~<br>~~PT~~|100<br>~~——————————~~<br>~~PT~~|nA<br>~~——————————~~|VGS= 20V<br>~~——————————~~|
||Gate-to-Source Reverse Leakage<br>~~——|~~|–––<br>~~||~~|–––|-100||VGS= -20V|
|gfs|Forward Transconductance<br>~~——|~~<br>~~pO~~|71<br>~~| |~~<br>~~pO~~|–––<br>~~pO~~|–––<br>~~pO~~|S<br>~~pO~~|VDS= 15V, ID= 12A<br>~~pO~~|
|Qg|Total Gate Charge<br>~~po~~|–––<br>~~po~~|9.6<br>~~po~~|14<br>~~po~~|nC|See Fig. 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 12A|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|2.6<br>~~a~~|–––<br>~~a~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~po~~|–––<br>~~po~~|0.90<br>~~po~~|–––<br>~~po~~|||
|Qgd|Gate-to-Drain Charge<br>~~a~~|–––<br>~~a~~|3.5<br>~~a~~|–––<br>~~a~~|||
|Qgodr|Gate Charge Overdrive<br>~~po~~|–––<br>~~po~~|2.6<br>~~po~~|–––<br>~~po~~|||
|Qsw<br>~~pO~~|Switch Charge (Qgs2+ Qgd)<br>~~a~~<br>~~pO~~|–––<br>~~a~~|4.4<br>~~a~~|–––<br>~~a~~|||
|Qoss<br>~~pO~~|Output Charge<br>~~pO~~|–––|5.8|–––|nC|VDS= 15V, VGS= 0V|
|td(on)<br>~~pO~~|Turn-On DelayTime<br>~~pO~~<br>~~a~~|–––|8.0|–––|ns|Clamped Inductive Load<br>VDD= 16V, VGS= 4.5V<br>ID= 12A<br>e|
|tr|Rise Time<br>~~po~~|–––<br>~~po~~|11<br>~~po~~|–––<br>~~po~~|||
|td(off)|Turn-Off DelayTime<br>~~po~~|–––<br>~~po~~|12<br>~~po~~|–––<br>~~po~~|||
|tf|Fall Time<br>~~po~~|–––<br>~~po~~|3.3<br>~~po~~|–––<br>~~po~~|||
|Ciss|Input Capacitance<br>~~po~~<br>~~po~~|–––<br>~~po~~<br>~~po~~|1150<br>~~po~~<br>~~po~~|–––<br>~~po~~<br>~~po~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|260<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~po~~|–––<br>~~po~~|120<br>~~po~~|–––<br>~~po~~|||



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|56<br>~~ee~~|A<br>~~ee~~|S<br>D<br>G<br>showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol|
|ISM|Pulsed Source Current<br>(BodyDiode)<br>~~re~~|–––<br>~~re~~|–––<br>~~re~~|220<br>~~re~~|~~re~~||
|VSD|Diode Forward Voltage<br>~~po~~|–––<br>~~po~~|–––<br>~~po~~|1.0<br>~~po~~|V<br>~~po~~|TJ= 25°C, IS= 12A, VGS= 0V<br>pn junction diode.<br>~~po~~|
|trr|Reverse RecoveryTime<br>~~—~~|–––<br>~~—~~|25<br>~~—~~|38<br>~~—~~|ns<br>~~—~~|TJ= 25°C, IF= 12A, VDD= 15V<br>di/dt = 100A/µs<br>~~—~~<br>~~a°~~|
|Qrr|Reverse RecoveryCharge<br>~~—~~<br>~~a~~|–––<br>~~—~~<br>~~a~~|17<br>~~—~~<br>~~a~~|26<br>~~—~~<br>~~a~~|nC<br>~~—~~<br>~~a~~||
|ton|Forward Turn-On Time<br>~~—~~<br>~~a~~<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~—~~<br>~~a~~<br>~~a~~|||||



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10000<br>VGS<br>TOP           10V<br>1000 6.0V<br>4.5V<br>4.0V<br>3.3V<br>100 2.8V<br>2.5V<br>BOTTOM 2.2V<br>10 p F<br>1 e e<br>0.1<br>e ee cl<br>2.2V<br>0.01<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.001 P o th<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100 T = 175°C<br>— — oa J<br>s i r<br>10<br>7<br>1<br>—p ——————tf |_|————  __<br>T = 25°C<br>J<br>0.1 e e | ee<br>VDS = 10V<br>20µs PULSE WIDTH<br>a<br>0.01<br>0 2 4 6 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>6.0V<br>4.5V<br>4.0V<br>100 3.3V<br>2.8V<br>2.5V<br>BOTTOM 2.2V<br>25 rr or<br>10<br>e e ot<br>2.2V<br>1 etot t To<br>20µs PULSE WIDTH<br>Tj = 175°C<br>0.1 Sen Atil ne atall|<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>ID = 30A<br>VGS = 10V<br>LEAL<br>ELLE<br>1.5<br>E L TDA<br>1.0 L LL7 LLL<br>ST |<br>ELE<br>0.5 ELL ELLE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 6.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 12A<br>Crss   = Cgd  5.0 VDS= 24V<br>Coss  = Cds + Cgd VDS= 15V<br>1 ws Sp<br>as 4.0 a, J<br>Ciss<br>1000 3.0<br>e ner|<br>Coss 2.0<br>1.0<br>e Crss a A | | | ly<br>100 a 0.0 A nn<br>1 10 100 0 2 4 6 8 10 12<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000.00<br>100.00<br>T = 175°C<br>J<br>10.00<br>T = 25°C<br>J<br>1.00<br>Os VGS = 0V<br>0.10<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10 100µsec<br>1msec<br>1<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse ne<br>0.1<br>0 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.5<br>50 Limited By Package<br>40 Py 2.0 T TT TTT<br>cee } A STI<br>30<br>ID = 250µA<br>20 1.5<br>PT NO<br>TT A B ERRERSEEEE<br>10 B aaenw TTTLLEL NG<br>0 Pi TLL 1.0 EL ELELEN,<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>D = 0.50<br>1<br>0.20<br>0.10<br>0.1 0.050.02 τJ τJ R1 R1 R2 R2 R3R3 τCτ Ri (°C/W)   0.823       0.000128 τi (sec)<br>0.01 τ1τ1 τ2 τ2 τ3τ3 1.698       0.000845<br>0.01 SINGLE PULSE Ci= Ci= τi/τRii/Ri 0.481       0.016503<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>x 20VVGS dt<br>tp 0.01Ω<br>,<br>**----- End of picture text -----**<br>


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200<br>ID<br>180 P i TT yt<br>TOP         3.7A<br>GERREae<br>160 5.6A<br>140 N EE BOTTOM 12A<br>R USE<br>120<br>100 E NE<br>G aN<br>806040 BP INBNEEINANE EERE<br>20 PP ERANPE| LTPE| LTTE| LT LT<br>P TE| LT LT<br>0 | Pree<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>— tp — 20 PP ERANPE| LTPE| LTTE| LT LT<br>0 | Pree<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>/ al<br>Fig 12c.   Maximum Avalanche Energy<br>y Ih vs. Drain Current<br>IAS LD<br>VDS<br>Fig 12b.   Unclamped Inductive Waveforms<br>+<br>VDD -<br>D.U.T<br>Current Regulator<br>Same Type as D.U.T. VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>50KΩ<br>12V .2µF<br>.3µF<br>rr Fig 14a. |   Switching Time Test Circuit<br>+<br>LL it at| ml<br>D.U.T. -VDS V<br>DS<br>90%<br>VGS<br>3mA<br>10%<br>IG ID V<br>GS<br>Current Sampling Resistors<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy 

**Fig 13.** Gate Charge Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** 

Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>H \<br>Vgs(th) !! \\<br>! \<br>! \<br>H \<br>H [\]<br>1 ot | 1<br>1 H ! ' |<br>><1) o t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

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This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

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TR TRR TRL<br>eeooooo\ | oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CC, OI)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mw =<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 0.58mH, RG = 25Ω, IAS = 12A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. © When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/2008 

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- [Supplier page](https://es.farnell.com/infineon/irfr3707ztrpbf/mosfet-n-ch-30v-56a-to-252aa/dp/2725962)
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