# Power MOSFET, N Channel, 20 V, 75 A, 9000 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8658790/)

**URL**: https://novapart.co/products/IRFR3706PBF/power-mosfet-n-channel-20-v-75-a-9000-ohm-to-252
**SKU**: IRFR3706PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3650
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 88W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8658790/)

## **SMPS MOSFET** 

IRFR3706PbF IRFU3706PbF 

## **Applications** 

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use 

High Frequency Buck  Converters for Computer Processor Power Lead-Free 

## **Benefits** 

> ° Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current 

HEXFET ® Power MOSFET a **VDSS** ee **RDS(on) max ID 20V 9.0m** Ω **75A** eeee 4 eS ‘ D-Pak I-Pak IRFR3706            IRFU3706 

## **Absolute Maximum Ratings** 

> **Symbol** a **Parameter Max. Units** VDS Drain-Source Voltage 20 V ~~—_.}-~~ VGS pS Gate-to-Source Voltage ± 12                                   V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 75 ~~esee ee©~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 53 A ~~——.3~~ IDM ~~St~~ Pulsed Drain Current 280 ~~— ————~~ PD @TC = 25°C ~~a~~ Maximum Power Dissipation 88 W PD @TC = 100°C Maximum Power Dissipation 44 W ~~oO~~ Linear Derating Factor                                                                     0.59                              mW/°C ~~eS EE~~ TJ , TSTG Junction and Storage Temperature Range -55  to + 175 °C ~~Ee~~ **Thermal Resistance** ee **Parameter Typ. Max. Units** RθJC Junction-to-Case ––– 1.7 ~~a~~ RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 ee ae 

When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

Notes hrough  are on page 10 

www.irf.com 

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## IRFR/U3706PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|a<br>~~a~~|**Parameter**<br>ee<br>|**Parameter**<br>ee<br>|**Min.**<br>ee<br>~~ee ee~~<br><br>~~es~~|**Typ.**<br>ee<br>~~ee~~<br><br>~~ee~~|**Max. Units**<br>ee<br>~~ee~~<br>|**Max. Units**<br>ee<br>~~ee~~<br>|**Max. Units**<br>ee<br>~~ee~~<br>|**Max. Units**<br>ee<br>~~ee~~<br>|**Conditions**<br>~~ee~~|**Conditions**<br>~~ee~~|**Conditions**<br>~~ee~~|
|---|---|---|---|---|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a es~~|Drain-to-Source Breakdown Voltage<br>~~es~~||20<br>~~ee ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|||V<br>~~ee~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~ee~~|||
|∆V(BR)DSS/∆TJ<br>~~es~~|JBreakdown Voltage Temp. Coefficient –––     0.021    –––    V/°C   Reference to 25°C, I<br>~~es~~||–––     0.021    –––    V/°C   Reference to 25°C, I<br>~~es ~~<br>~~es~~<br>~~ff~~|–––     0.021    –––    V/°C   Reference to 25°C, I<br> ~~ee~~<br>~~es~~<br>~~ffCT~~|–––     0.021    –––    V/°C   Reference to 25°C, I<br>~~es~~<br>~~CT~~|||–––     0.021    –––    V/°C   Reference to 25°C, I<br>~~es~~|–––     0.021    –––    V/°C   Reference to 25°C, ID= 1mA<br>@|||
|RDS(on)|Static Drain-to-Source On-Resistance||–––<br>~~ff~~|6.9<br>~~ffCT~~|9.0<br>~~CT~~|||mΩ|VGS= 10V, ID= 15A<br>@|||
||||–––<br>~~ff~~<br>ff<br>~~fT~~|8.1<br>~~ff CT~~<br>ff<br>~~fTCT~~|11<br>~~CT~~<br>ff<br>~~CT~~||||VGS= 4.5V, ID= 12A<br>@<br>~~@~~|||
||||–––<br>~~fT~~|11.5<br>~~fTCT~~|23<br>~~CT~~||||VGS= 2.8V, ID= 7.5A<br>~~@~~|||
|VGS(th)<br>~~ss~~|Gate Threshold Voltage<br>~~ss~~||0.6<br>~~fT~~<br>~~ss~~|–––<br>~~fT CT~~<br>~~ss~~|2.0<br>~~CT~~<br>~~ss~~|||V<br>~~ss~~|VDS= VGS, ID= 250µA<br>~~@~~|||
|IDSS<br>~~—~~<br>|||Drain-to-Source Leakage Current<br>~~—~~||–––<br>~~—~~|–––<br>~~—~~|20<br>~~—~~|||µA<br>~~—~~<br>7”|VDS= 16V, VGS= 0V|||
||||–––<br>~~—~~|–––<br>~~—~~|100<br>~~—~~||||VDS= 16V, VGS= 0V, TJ= 125°C|||
|IGSS<br>|||Gate-to-Source Forward Leakage||–––<br>es|–––|200<br>Gs|||nA<br>7”<br>Gs|VGS= 12V|||
||Gate-to-Source Reverse Leakage<br>~~rs~~||–––<br>~~rs~~<br>es|–––<br>~~rs~~|-200<br>~~rs~~<br>Gs||||VGS= -12V|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>| |<br>7”<br>es<br>Gs||||||||||||
|**Symbol**|**Parameter**<br>es||**Min.**<br>es<br>~~es~~|**Typ. **<br>es<br>~~ed~~|**Max. **<br>es||**Units**<br>es||**Conditions**|||
|gfs|Forward Transconductance<br>es||53<br>es<br>~~es~~<br>ee|–––<br>es<br>~~ed~~<br>ee|–––<br>es||S<br>es||VDS= 16V, ID= 57A|||
|Qg|Total Gate Charge<br>~~es~~||–––<br>~~es ~~<br>~~es~~<br>ee|23<br> ~~ed~~<br>~~es~~<br>ee|35                I<br>~~es~~||35                I<br>nC<br>~~es~~<br>~~ee~~<br>es||35                ID= 28A<br>VDS= 10V<br>VGS= 4.5V<br>®|||
|Qgs|Gate-to-Source Charge<br>~~ee~~||–––<br>ee <br>~~ee~~|8.0<br> ee<br>~~ee~~|12<br>~~ee~~|||||||
|Qgd<br>es|Gate-to-Drain ("Miller") Charge<br>a||–––|5.5|8.3|||||||
|Qoss<br>es<br>ee<br>Rs|Output Gate Charge<br>a<br>es||–––<br>es<br>ee|16<br>es<br>es|24<br>es||||VGS= 0V, VDS= 10V<br>®|||
|Rg<br>es<br>ee<br>Rs|Gate Resistance<br>a<br>es||–––<br>es<br>ee|1.8<br>es<br>es|–––<br>es||Ω<br>es||®|||
|td(on)<br>ee<br>Rs<br>es|Turn-On Delay Time<br>es||–––<br>es<br>ee|6.8<br>es<br>es|–––<br>es||ns<br>es<br>ee||VDD= 10V<br>ID= 28A<br>RG= 1.8Ω<br>VGS= 4.5V<br>®|||
|tr<br>Rs<br>es<br>es<br>es|Rise Time<br>ee||–––<br>ee <br>ee<br>es|87<br> es<br>ee|–––<br>ee|||||||
|td(off)<br>es<br>es<br>es|Turn-Off Delay Time<br>ee||–––<br>ee<br>es|17<br>ee|–––<br>ee|||||||
|tf<br>es<br>es<br>es|Fall Time<br>ee||–––<br>ee<br>es|4.8<br>ee|–––<br>ee|||||||
|Ciss<br>es<br>es<br>~~es~~|Input Capacitance||–––<br>es|2410|–––||pF<br>||VGS= 0V<br>VDS= 10V<br>ƒ = 1.0MHz<br>®<br>|||
|Coss<br>es<br>~~es~~<br>~~es~~|Output Capacitance<br>||–––<br>|1070<br>|–––<br>|||||||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>||–––<br>|140<br>|–––<br>|||||||
|**Avalanche Characteristics**<br>~~es~~||||||||||||
|**Symbol**<br>~~ee~~<br>es||**Parameter**<br>~~ee~~<br>>QO||||**Typ.**<br>~~ee~~<br>QO||||**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|EAS<br>es<br>es||Single Pulse Avalanche Energy<br>>QO<br>©||||–––<br>QO||||220|mJ|
|IAR<br>es<br>es||Avalanche Current<br>> QO<br>©<br>GO||||–––<br>QO<br>GO||||28<br>GO|A<br>GO|



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## IRFR/U3706PbF 

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**----- Start of picture text -----**<br>
 1000<br>VGS SEE<br>TOP 10V<br>4.5V<br>3.7V tt ec<br>3.5V3.3V 2<br>3.0V2.7V HE<br>BOTTOM 2.5V<br>WP Zant a<br> 100 ll) Zeeec= all<br>a, |<br>i / 20; en 2.5V |<br>WYYorJAzilll Trill<br>20µs PULSE WIDTH<br> 10 MY)ii ii T  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

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 1000 ————<br>Enesee<br>T  = 25  CJ °<br>ea<br>P| eee T  = 175  C  TY J °<br>aT<br> 100 ee<br>i7 | | [7 [fT fT ft fy<br>a ee ee ee ee ee<br>V      = 15VDS<br>20µs PULSE WIDTH<br> 10<br>2.5 3.5 4.5 5.5 6.5<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
 1000<br>VGS Sse Seer<br>TOP 10V<br>4.5V<br>3.7V oh<br>3.5V3.3V ie<br>3.0V2.7V ee<br>BOTTOM 2.5V<br>Mh | AT<br> 100 LAINZz TT<br>nn), Ae<br>2.5V<br>pe ea<br>|By| J 0A|<br>20µs PULSE WIDTH<br> 10 AUd iN T  = 175J °C |<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>ID = 71A<br>P ELE<br>1.5<br>LL, Z|<br>Py Tt] tT | Lr |<br>PELLETa<br>1.0 pa<br>0.5<br>VGS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFR/U3706PbF 

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100000 VGS   = 0V,       f = 1 MHZ 10 ID = 28A<br>Ciss    = Cgs + Cgd,   Cds    SHORTED VDS = 16V<br>Crss    = Cgd  8 VDS = 10V<br>=— C  = C + C ann S I<br>10000 oss   ds  gd<br>eee pit tt Ly<br>Ciss 6<br>I Ee<br>1000 Coss<br>4<br>PSS EE THT TTT<br>100 Crss<br>el l TTA<br>2<br>a ee ee ee /<br>10 Pee Zc<br>0<br>1 10 100 0 10 20 30 40 50<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>10us<br>a erties<br> 100<br>S T  = 175  CJJ ° S [[=—]]  100 TH ait<br>100us<br> 10 a  ee p—P a<br>1ms<br>SS SS Sa ° aS Ea H H<br>ee T  = 25  CJJ  10 i lll<br>10ms<br> 1<br>$<§§ + Pp TTCTTC<‘iY:CSC(T;SC STs ET TY Pt TTT<br> T TCJ = 25  C= 175  C° °<br>0.1 Se rT V      = 0 V GSGS  1 e  Single Pulse |at<br>0.2 0.6 1.0 1.4 1.8  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 1000<br>a<br> 100<br>S T  = 175  CJJ ° S [[=—]]<br> 10 a  ee<br>SS SS Sa ° aS<br>ee T  = 25  CJJ<br> 1<br>$<§§ +<br>Se rT V      = 0 V GSGS<br>0.1<br>0.2 0.6 1.0 1.4 1.8<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFR/U3706PbF 

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**----- Start of picture text -----**<br>
80<br>Yes |<br>LIMITED BY PACKAGE<br>PEL Rp<br>LP EEL LEE V,y Dus.<br>60<br>-<br>LAR\ LEE Re | Vee<br>40 PLL EAL s]TSA EE } 48V ≤ 1<br>≤ 0.1 %<br>PEEL SJ Pulse Width us<br>LY LLIN ee<br>Fig 10a.   Switching Time Test Circuit<br>20<br>VDS<br>90%<br>0 |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>PE ELE EEE EEL  LA VGS AY.|\« p< >!| le ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10 pt—“‘“‘LLSOCOUCTTCUTChPCT=== ==...UT hc hddTr- +. aneTT<br>a<br>aa ee ee ee<br> 1 D = 0.50 |__|PTE _| |} iii eee TTel<br>0.20<br>E e 6s ee es<br>e<br>0.10<br>0.05 PDM<br>0.1 o 0.02 e esee SINGLE PULSE eeRsee t1<br>eens 0.01 lL ee| ee| ee| | (THERMAL RESPONSE) ee es es ee aeeOO ee Qe GG OOO t2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFR/U3706PbF 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>“<br>20V<br>tp 0.01Ω<br>Eon<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
_ tp V(BR)DSS<br>al<br>a<br>IAS<br>**----- End of picture text -----**<br>


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500<br>ID<br>NER TOP 12A<br>24A<br>NE<br>400 ENGR BOTTOM 28A<br>BANE<br>300 PING Ey<br>200<br>NG EKGE EERE<br>PSA<br>100<br>pt SOR<br>pf SSA<br>Pet TSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
QG<br>sey T T<br>QGS QGD<br>a<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>| lst .3µF<br>~LLit7): D.U.T. +-VDS<br>VGS<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFR/U3706PbF 

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**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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## IRFR/U3706PbF D-Pak (TO-252AA) Pack 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL ><br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY e a t<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL GN<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Pos P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY i a t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## IRFR/U3706PbF 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>LOT CODE 5678ASSEMBLED ON WW 19, 1999WITH ASSEMBLY RECTIFIERLOGO 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>si<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## IRFR/U3706PbF 

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**----- Start of picture text -----**<br>
TR TRR TRL<br>eoeoooe sl 1 e$e¢oo/|<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm |<br>**----- End of picture text -----**<br>


NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Notes: ®® Repetitive rating;  pulse width limited by Pulse width ≤≤ 400µs; duty cycle ≤ 2%. 2%. ≤ 2%. 2%. 

®® Repetitive rating;  pulse width limited by Pulse width ≤≤ 400µs; duty cycle ≤ 2%. 2%. max. junction temperature. 

iC) Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. 

© Starting TJ = 25°C, L = 0.54mH RG = 25Ω, IAS = 28A. 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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