# Power MOSFET, N Channel, 20 V, 60 A, 8400 µohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/IRFR3704ZPBF/power-mosfet-n-channel-20-v-60-a-8400-ohm-to-252
**SKU**: IRFR3704ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2870
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Diss
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 48W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 8400µohm |
| Gate Source Threshold Voltage Max | 2.1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1013409/)
## **Applications**
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free
PD - 954424 IRFR3704ZPbF IRFU3704ZPbF HEXFET ® Power MOSFET **VDSS RDS(on) max Qg 20V 8.4m 9.3nC** ~~|_| | |~~
## **Benefits**
> 3 Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
**==> picture [122 x 20] intentionally omitted <==**
**----- Start of picture text -----**
D-Pak I-Pak
IRFR3704Z IRFU3704Z
**----- End of picture text -----**
## **Absolute Maximum Ratings**
|~~OTN~~|**Parameter**
~~OTN~~
~~—"17)7]?]?]?]/_~~
~~ee~~|**Max.**
~~—"17)7]?]?]?]/_~~
~~ae~~|**Units**
~~ae~~|
|---|---|---|---|
|VDS
~~OTN~~
~~—~~|Drain-to-Source Voltage
~~OTN~~
~~—"17)7]?]?]?]/_~~
~~—~~
~~.”~~
~~ee~~|20
~~—"17)7]?]?]?]/_~~
~~pvtNYrnv’—~~
~~ae~~|V
~~ae~~|
|VGS
~~OTN~~
~~—~~|Gate-to-Source Voltage
~~OTN~~
~~—"17)7]?]?]?]/_~~
~~—~~
~~.”~~
~~ee~~|± 20
~~—"17)7]?]?]?]/_~~
~~pvtNYrnv’—~~
~~ae~~||
|ID@ TC= 25°C
~~—~~|Continuous Drain Current, VGS@ 10V
~~—~~
~~.” ~~
~~ee~~
~~——~~|60
~~pvtNYrnv’—~~
~~ae~~
~~——~~|A
~~ae~~
~~a~~e|
|ID@ TC= 100°C|Continuous Drain Current,VGS @10V
~~ee~~
~~——~~|42
~~ae~~
~~——~~||
|IDM|Pulsed Drain Current
~~——~~
~~Te~~|240
~~——~~
~~Te~~||
|PD@TC= 25°C|Maximum Power Dissipation
~~"2~~
~~Ee~~|48
~~"2~~
~~Ee~~|W
~~Ee~~|
|PD@TC= 100°C|Maximum Power Dissipation
~~Ee~~|24
~~Ee~~||
|~~po~~|Linear DeratingFactor
~~Ee~~
~~po~~|0.32
~~Ee~~|W/°C
~~Ee~~|
|TJ
TSTG
~~po~~|Operating Junction and
Storage Temperature Range
~~ee~~
~~po~~|-55 to + 175
~~ee~~|°C|
|~~po~~|SolderingTemperature,for 10 seconds
~~po~~|300(1.6mm from case)||
Notes oO) hrough © are on page 11 www.irf.com
1
12/03/04
**Static @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**
~~Gn~~|**Typ.**
~~Gn~~|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage
~~es~~|20
~~es~~
~~Gn~~
~~en~~|–––
~~es~~
~~Gn~~
~~en~~|–––
~~es~~|V
~~es~~|VGS= 0V, ID= 250µA
~~es~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient
~~ee~~|–––
~~Gn~~
~~ee~~
~~en~~
~~|~~|0.015
~~Gn~~
~~ee~~
~~en~~
~~|~~|–––
~~ee~~
~~O~~
|V/°C
~~ee~~
~~O~~|Reference to 25°C, ID= 1mA
~~ee~~
~~OE~~|
|RDS(on)
~~Sn~~|Static Drain-to-Source On-Resistance
~~ee~~
~~Se~~
~~Sn~~|–––
~~ee~~
~~en~~
~~Se~~
~~|~~|6.7
~~ee~~
~~en~~
~~Se~~
~~|~~|8.4
~~ee~~
~~Se~~
~~O~~
|mΩ
~~ee~~
~~Se~~
~~O~~
~~en~~|VGS= 10V, ID= 15A
~~ee~~
~~Se~~
~~OE~~|
|||–––
~~Se~~
~~|~~|9.2
~~Se~~
~~| |~~
~~ne~~|11.4
~~Se~~
~~O~~
~~|~~
~~ed~~||VGS= 4.5V, ID= 12A
~~Se~~
~~OE~~
~~®~~|
|VGS(th)
~~Sn~~
~~Re~~|Gate Threshold Voltage
~~Se~~
~~Sn~~
~~Re~~|1.65
~~Se~~
~~|~~
~~ee~~
|2.1
~~Se~~
~~| |~~
~~ne~~
~~es~~
|2.55
~~Se~~
~~O~~
~~|~~
~~ed~~
|V
~~Se~~
~~O~~
~~en~~
|VDS= VGS, ID= 250µA
~~Se~~
~~OE~~
~~®~~
|
|∆VGS(th)/∆TJ
~~Sn~~
~~Re~~|Gate Threshold Voltage Coefficient
~~Sn~~
~~es~~
~~Re~~|–––
~~es~~
~~ee~~
|-5.5
~~|~~
~~ne~~
~~es~~
~~es~~
|–––
~~|~~
~~ed~~
~~es~~
|mV/°C
~~en~~
~~es~~
||
|IDSS
~~Sn~~
~~Re~~|Drain-to-Source Leakage Current
~~Sn~~
~~Re ~~|–––
~~ee~~
~~EE~~
~~**|**~~|–––
~~|~~
~~ne ~~
~~es~~
~~EE~~
~~**|**~~|1.0
~~|~~
~~ed ~~
~~EE~~|µA
~~en~~
~~EE~~|VDS=16V, VGS= 0V
~~®~~
~~EE~~|
|||–––
~~ee~~
~~EE~~
~~**|**~~|–––
~~es~~
~~EE~~
~~**|**~~|150
~~EE~~||VDS= 16V, VGS= 0V, TJ= 125°C
~~EE~~|
|IGSS
~~Re~~|Gate-to-Source Forward Leakage
~~Re ~~
~~ee~~|–––
~~ee ~~
~~**|**~~
~~ee~~
~~fT~~|–––
~~es~~
~~**|**~~
~~ee~~
~~fTrT~~|100
~~ee~~
~~rT~~|nA
~~ee~~
~~Gs~~|VGS= 20V
~~ee~~|
||Gate-to-Source Reverse Leakage
~~ee~~|–––
~~ee~~
~~fT~~
~~ee~~|–––
~~ee~~
~~fTrT~~
~~Gs~~|-100
~~ee~~
~~rT~~
~~Gs~~||VGS= -20V
~~ee~~|
|gfs|Forward Transconductance
~~ee~~
~~es~~|41
~~ee~~
~~fT~~
~~es~~
~~ee~~
~~ee~~|–––
~~ee~~
~~fT rT~~
~~es~~
~~Gs~~
~~ee~~|–––
~~ee~~
~~rT~~
~~es~~
~~Gs~~|S
~~ee~~
~~es~~
~~Gs~~|VDS= 10V, ID= 12A
~~ee~~
~~es~~|
|Qg|Total Gate Charge
~~es~~
~~ee~~|–––
~~es~~
~~ee ~~
~~ee~~
~~ee~~
~~ee~~|9.3
~~es~~
~~Gs ~~
~~ee~~
~~ee~~
~~es~~|14
~~es~~
~~Gs~~
~~ee~~|nC
~~es~~
~~Gs~~|See Fig. 16
VDS= 10V
VGS= 4.5V
ID= 12A
~~es~~|
|Qgs1|Pre-Vth Gate-to-Source Charge
~~ee~~|–––
~~ee ~~
~~ee~~
~~ee~~
~~ee~~|3.0
~~ee~~
~~ee~~
~~es~~
~~ee~~|–––
~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge
~~es~~|–––
~~ee ~~
~~es~~
~~ee~~
~~ee~~|1.1
~~es~~
~~es~~
~~ee~~
~~es~~|–––
~~es~~|||
|Qgd|Gate-to-Drain Charge
~~ee~~|–––
~~ee ~~
~~ee~~
~~ee~~
~~ee~~|2.7
~~ee~~
~~ee~~
~~es~~
~~ee~~|–––
~~ee~~|||
|Qgodr|Gate Charge Overdrive
~~es~~|–––
~~ee ~~
~~es~~
~~ee~~
~~ee~~|2.5
~~es~~
~~es~~
~~ee~~|–––
~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)
~~ee~~
~~ee~~|–––
~~ee ~~
~~ee~~
~~ee~~
~~Gs~~|3.8
~~ee~~
~~ee~~
~~Gs~~|–––
~~ee~~|||
|Qoss|Output Charge
~~ee~~
~~es~~
~~ee~~|–––
~~ee~~
~~ee~~
~~es~~
~~Gs~~
~~ee~~|5.6
~~ee~~
~~es~~
~~Gs~~
~~ee~~|–––
~~ee~~
~~es~~|nC
~~es~~|VDS= 10V, VGS= 0V
~~es~~
®|
|td(on)|Turn-On DelayTime
~~es~~
~~ee~~|–––
~~es~~
~~Gs~~
~~ee~~
~~ee~~|41
~~es~~
~~Gs~~
~~ee~~
~~ee~~|–––
~~es~~|ns
~~es~~|Clamped Inductive Load
VDD= 10V, VGS= 4.5V
ID= 12A
~~es~~
®|
|tr|Rise Time
~~ee~~
~~es~~|–––
~~Gs~~
~~ee ~~
~~es~~
~~ee~~
~~ee~~|8.9
~~Gs~~
~~ee~~
~~es~~
~~ee~~
~~es~~|–––
~~es~~|||
|td(off)|Turn-Off DelayTime
~~ee~~|–––
~~ee ~~
~~ee~~
~~ee~~
~~ee~~|4.9
~~ee~~
~~ee~~
~~es~~
~~ee~~|–––
~~ee~~|||
|tf|Fall Time
~~es~~|–––
~~ee ~~
~~es~~
~~ee~~
~~ee~~|12
~~es~~
~~es~~
~~ee~~
~~es~~|–––
~~es~~|||
|Ciss|Input Capacitance
~~ee~~|–––
~~ee ~~
~~ee~~
~~ee~~
~~ee~~|1190
~~ee~~
~~ee~~
~~es~~
~~ee~~|–––
~~ee~~|pF|ƒ= 1.0MHz
VGS= 0V
VDS= 10V|
|Coss|Output Capacitance
~~es~~|–––
~~ee ~~
~~es~~
~~ee~~
~~ee~~|380
~~es~~
~~es~~
~~ee~~
~~es~~|–––
~~es~~|||
|Crss|Reverse Transfer Capacitance
~~ee~~|–––
~~ee ~~
~~ee~~
~~ee~~|170
~~ee~~
~~ee~~
~~es~~|–––
~~ee~~|||
## **Diode Characteristics**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current
(BodyDiode)|–––|–––|60|A|S
D
G
showing the
integral reverse
p-n junction diode.
MOSFET symbol
~~nO~~|
|ISM|Pulsed Source Current
(BodyDiode)|–––
~~en Gs~~|–––
~~Gs n~~|240
~~n~~|~~n~~||
|VSD|Diode Forward Voltage
~~es~~
~~**e**~~|–––
~~es~~
~~en Gs~~
~~**e**~~|–––
~~es~~
~~Gs n~~
~~**e**e~~|1.0
~~es~~
~~n~~
~~e~~|V
~~es~~
~~n~~
~~e~~|TJ= 25°C, IS= 12A, VGS= 0V
~~es~~
~~nO~~
~~e~~|
|trr|Reverse RecoveryTime
~~es~~
~~**e**~~
~~s~~|–––
~~es~~
~~en Gs~~
~~**e**~~
~~ee~~|13
~~es~~
~~Gs n~~
~~**e**e~~
~~es~~|19
~~es~~
~~n~~
~~e~~|ns
~~es~~
~~n~~
~~e~~|TJ= 25°C, IF= 12A, VDD= 10V
di/dt = 100A/µs
~~es~~
~~nO~~
~~e~~
~~®~~|
|Qrr|Reverse RecoveryCharge
~~**e**~~
~~s~~|–––
~~**e**~~
~~ee~~|4.2
~~**e**e~~
~~es~~|6.3
~~e~~|nC
~~e~~||
|ton|Forward Turn-On Time
~~**e**~~
~~s ~~
~~ee~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
~~**e**e~~
~~ee es~~
~~®~~
~~ee~~|||||
**==> picture [214 x 479] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS
TOP 10V
6.0V | ee
100 4.5V4.0V
4.0V
3.3V
2.8V
2.6V
10 BOTTOMOTTOM 2.4V
“alle ar a LH 2.4V Lo
1
Sz a ee a ee ee
A;; |aTDe
0.1
HE 20µs PULSE WIDTH HH
Tj = 175°C
0.01 PL LE
0.01 0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = 30AD = 30A= 30A
VGS = 10VGS = 10V= 10V
1.5 Fir Fa
E LE LerLT
ea
1.0 A]LT |
iT
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
**----- End of picture text -----**
**==> picture [344 x 480] intentionally omitted <==**
**----- Start of picture text -----**
1000 1000
VGS VGS
TOP 10V TOP 10V
6.0V Le 6.0V
100 4.5V4.0V 100 4.5V4.0V
3.3V 3.3V
2.8V 2.8V
10 2.6V 2.6V
BOTTOM 2.4V 10 BOTTOMOTTOM 2.4V
1 C a se eee “alle ar a
1
0.1 “| | Sz a
e eeteeLe 2.4V TTTeee A;; De
0.1
0.01
ce Se | eee 20µs PULSE WIDTH HE
Tj = 25°C
0.001 i Py 0.01 PL
0.01 0.1 1 10 0.01 0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2.
1000 2.0
— —— ID = 30AD = 30A= 30A
VGS = 10VGS = 10V= 10V
100 TJ = 175°C
a ee 7/2 ee ee_ ee ee eee 1.5 Fir
10
a7 / aie E LE
a 2 ee ee ee ee eee eee
1
p =f}SSoj of | | | | 1.0
T = 25°C
J
0.1 p f | oj oj | | | | iT
— VDS = 10V —
20µs PULSE WIDTH
|
0.01 | 0.5
2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
)(Α
ID, Drain-to-Source Current
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
**----- End of picture text -----**
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance vs. Temperature
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**==> picture [206 x 201] intentionally omitted <==**
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10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
a
Ciss
1000
S e
Coss
100 ee ST Crss I=IT|THT
1 10 100
VDS, Drain-to-Source Voltage (V)
C, Capacitance(pF)
**----- End of picture text -----**
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**==> picture [213 x 201] intentionally omitted <==**
**----- Start of picture text -----**
1000.00
100.00
TJ = 175°C
10.00
P = PE== =—===
T = 25°C GE EE FI
J
1.00
V = 0V
oi GS
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
**----- End of picture text -----**
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**==> picture [212 x 201] intentionally omitted <==**
**----- Start of picture text -----**
6.0
I = 12A
D
5.0 VDS= 18V
VDS= 10V
4.0
3.0
2.01.0 P Y} fy yd
0.0 A/ GREE
0 2 4 6 8 10 12 14
QG Total Gate Charge (nC)
VGS, Gate-to-Source Voltage (V)
**----- End of picture text -----**
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
**==> picture [204 x 201] intentionally omitted <==**
**----- Start of picture text -----**
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
=P MIE [SCs]
100µsec
10 CTT
P a S| |
1msec
Tc = 25°C
Tj = 175°C
Single Pulse 10msec
PTT
1
0 1 10 100
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 8.** Maximum Safe Operating Area
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**==> picture [445 x 484] intentionally omitted <==**
**----- Start of picture text -----**
60 2.5
50 Limited By Package
|G
2.0
rise NEEL EEL
40
ID = 250µA
LE AN
30 1.5
20
1.0
eee C LLLLLLLIN.
10
0 | | tt INN — 0.5 CEEEEEEEEE
-75 -50 -25 0 25 50 75 100 125 150 175 200
25 50 75 100 125 150 175
TJ , Temperature ( °C )
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.1 0.020.010.05 τJ τJτ1τ1 R1 R 1 τ2 τR22 R 2 Rτ33 R τ33 τR4τ4R4 4 τCτ Ri (°C/W) 0.8190 0.0000921.6018 0.0006980.6592 0.009033 τi (sec)
SINGLE PULSE
0.01 ( THERMAL RESPONSE ) Ci= Ciτi/Rii/Ri 0.0418 0.046618
ee ee ee
Notes:
1. Duty Factor D = t1/t2
| Te EE 2. Peak Tj = P dm x Zthjc + Tc l
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
Thermal Response ( Z thJC )
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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**==> picture [150 x 99] intentionally omitted <==**
**----- Start of picture text -----**
15V
VDS L DRIVER
RG D.U.T +
- [V][DD]
IAS
Pose 20VVGS sf
tp 0.01 ly Ω
**----- End of picture text -----**
**Fig 12a.** Unclamped Inductive Test Circuit
**==> picture [164 x 115] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS
tp
/
/ \
/ \
IAS
**----- End of picture text -----**
**Fig 12b.** Unclamped Inductive Waveforms
**==> picture [158 x 160] intentionally omitted <==**
**----- Start of picture text -----**
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
ree .3µF
LEjt +
D.U.T. -VDS
VGS
3mA
of
S|
IG ID
Current Sampling Resistors
**----- End of picture text -----**
**Fig 13.** Gate Charge Test Circuit
**==> picture [208 x 201] intentionally omitted <==**
**----- Start of picture text -----**
180
ID
160 P E LLL LL
140 N aan TOP 4.9A6.5A
BOTTOM 12A
120
E NGR
100
K ee
80 P IN EEL EEE [LLL]
60 S UNG
40 P ENNAEEE EE
20
0 P i]EA| PESESsETT
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
EAS , Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**Fig 12c.** Maximum Avalanche Energy vs. Drain Current
**==> picture [167 x 258] intentionally omitted <==**
**----- Start of picture text -----**
LD
VDS
+
VDD -
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
)
Fig 14a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
td(on) tr td(off) tf
**----- End of picture text -----**
**Fig 14a.** Switching Time Test Circuit
**Fig 14b.** Switching Time Waveforms
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**==> picture [415 x 164] intentionally omitted <==**
**----- Start of picture text -----**
Driver Gate Drive
P.W.
D.U.T + {+ P.W. Period ——— + D = —— Period
) [©)] • Circuit Layout Considerations | t V | GS=10V
•
| =] - LowGround StrayPla I n eductance
• Low Leakage Inductance 2) D.U.T. ISD Waveform
+
Reverse
Recovery Body Diode Forward
oi - [l] Current Transformer - ® + Current r Current di/dt NN
® D.U.T. VDS Waveform Diode Recoverydv/dt ‘
00 +> VDD
ma
• Re-Applied
• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
Re ( A • dvidt controlled by Re Vpp - Inductor Curent
• D.U.T. - Device Under Test es ee
Isp controlled by Duty Factor "D" ® Ripple ≤ 5% ISD
**----- End of picture text -----**
**Fig 15.**
Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs
**==> picture [245 x 198] intentionally omitted <==**
**----- Start of picture text -----**
Id
Vds f'
1 Vgs
I
1
1
1
1
I
1
|
H \
Vgs(th) !! \\
! \
! \
H \
H [\]
1 ot | 1
1 H ! ' |
><1) o t
Qgs1 Qgs2 Qgd Qgodr
**----- End of picture text -----**
**Fig 16.** Gate Charge Waveform
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## **Power MOSFET Selection for Non-Isolated DC/DC Converters**
## **Control FET**
## **Synchronous FET**
The power loss equation for Q2 is approximated by;
**==> picture [185 x 14] intentionally omitted <==**
This can be expanded and approximated by;
**==> picture [206 x 109] intentionally omitted <==**
**==> picture [187 x 102] intentionally omitted <==**
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
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**==> picture [297 x 158] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY INTERNATIONAL
LOT CODE 1234 RECTIFIER IRFU120 DATE CODE
ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE ASSEMBLY LINE "A" 12 34 WEEK 16
o on LINE A
Note: "P" in assembly line position ASSEMBLY t aa l
indicates "Lead-Free" LOT CODE
OR
PART NUMBER
INTERNATIONAL coN
RECTIFIER IRFU120 DATE CODE
LOGO IGaR Pgi6A P = DESIGNATES LEAD-FREE
12 34 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY e a l WEEK 16
LOT CODE
A = ASSEMBLY SITE CODE
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www.irf.com
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9
**==> picture [236 x 144] intentionally omitted <==**
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EXAMPLE: THIS IS AN IRFU120 PART NUMBER
INTERNATIONAL
WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 YEAR 9 = 1999DATE CODEWEEK 19
IN THE ASSEMBLY LINE "A"
LINE A
Note: position indicates "Lead-Free" "P" in assembly line LOT CODEASSEMBLY
PART NUMBER
INTERNATIONAL os
RECTIFIER IRFU120 DATE CODE
LOGO P = DESIGNATES LEAD-FREE
56 78 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY WEEK 19
LOT CODE A = ASSEMBLY SITE CODE
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**----- Start of picture text -----**
10
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**----- Start of picture text -----**
www.irf.com
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**==> picture [282 x 92] intentionally omitted <==**
**----- Start of picture text -----**
TR TRR TRL
$oGO9G 0) 4 eo¢oof4
16.3 ( .641 ) 16.3 ( .641 )
15.7 ( .619 ) 15.7 ( .619 )
7
12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )
NOTES :
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1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**==> picture [26 x 6] intentionally omitted <==**
**----- Start of picture text -----**
13 INCH
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**==> picture [18 x 6] intentionally omitted <==**
**----- Start of picture text -----**
16 mm
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NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.57mH, RG = 25Ω, IAS = 12A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. © When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04
www.irf.com
11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## Links
- [View this product on Novapart](https://novapart.co/products/IRFR3704ZPBF/power-mosfet-n-channel-20-v-60-a-8400-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr3704zpbf/mosfet-n-logic-d-pak/dp/1013409)
---
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