# Power MOSFET, N Channel, 80 V, 38 A, 0.024 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2839491/)

**URL**: https://novapart.co/products/IRFR3518TRPBF/power-mosfet-n-channel-80-v-38-a-0024-ohm-to-252
**SKU**: IRFR3518TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1690
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.024ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 38A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839491/)

## PD - 95510A IRFR3518PbF IRFU3518PbF 

## **Applications** 

High frequency DC-DC converters Lead-Free 

HEXFET Power MOSFET **VDSS RDS(on) max ID 80V 29m 30A** a ee ee: ee ee 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

> : Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

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D-Pak I-Pak<br>IRFR3518 IRFU3518<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~Ss~~|**Parameter**<br>~~Ss~~|**Max.**<br>~~Ss~~|**Max.**<br>~~Ss~~|**Max.**<br>~~Ss~~|**Units**<br>~~Ss~~|**Units**<br>~~Ss~~|
|---|---|---|---|---|---|---|
|VDS<br>~~Ss~~<br>~~rd~~<br>~~-———~~<br>PR|Drain-to-Source Voltage<br>~~Ss~~<br>PR|80<br>~~Ss~~<br>~~|~~|||V<br>~~Ss~~<br>~~|~~||
|VGS<br>~~rd~~<br>~~-———~~<br>PR<br>~~rd~~|Gate-to-Source Voltage<br>PR<br>~~rd~~<br>~~———~~|± 20<br>~~|~~<br>~~———~~|||||
|ID@ TC= 25°C<br>~~rd~~<br>~~-———~~<br>PR<br>~~rd~~|Continuous Drain Current, VGS@ 10V<br>PR<br>~~rd~~<br>~~———~~|38<br>~~|~~<br>~~a~~<br>~~———~~|||A<br>~~|~~<br>~~a~~||
|ID@ TC= 100°C<br>~~-———~~<br>PR~~a~~<br>~~rd~~|Continuous Drain Current, VGS@ 10V<br>PR~~a~~<br>~~a~~<br>~~rd~~<br>~~———~~|27<br>~~a~~<br>~~———~~|||||
|IDM<br>~~a~~<br>~~rd~~|Pulsed Drain Current<br>~~a~~<br>~~rd~~<br>~~———~~|150<br>~~———~~|||||
|PD@TC= 25°C<br>~~rd~~<br>~~rd a~~|Power Dissipation<br>~~rd~~<br>~~———~~<br>~~a~~|110<br>~~———~~|||W||
|~~rd~~<br>~~rd a~~|Linear DeratingFactor<br>~~rd~~<br>~~———~~<br>~~a~~<br>~~Pp~~|0.71<br>~~———~~<br>~~Pp~~|||W/°C||
|dv/dt<br>~~rd a~~<br>~~a~~<br>—}|—__{|Peak Diode Recovery dv/dt<br>~~a~~<br>~~a~~<br>—}|—__{|5.2<br>—}|—__{<br>____j|||V/ns<br>____j||
|TJ<br>TSTG<br>—}|—__{|Operating Junction and<br>Storage Temperature Range<br>—}|—__{|-55  to + 175<br>—}|—__{<br>____j|||°C<br>____j||
|—}|—__{|Soldering Temperature, for 10 seconds<br>—}|—__{|300 (1.6mm from case )<br>—}|—__{<br>____j|||||
|**Thermal Resistance**<br>—}|—__{<br>____j|||||||
|es|**Parameter**<br>es||**Typ.**|**Max.**||**Units**|
|RθJC|Junction-to-Case||–––|1.4||°C/W|
|RθJA|Junction-to-Ambient (PCB mount)||–––|40|||
|RθJA|Junction-to-Ambient||–––|110|||



|es|**Parameter**<br>es|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.4||
|RθJA|Junction-to-Ambient (PCB mount)|–––|40|°C/W|
|RθJA|Junction-to-Ambient|–––|110||



> Notes ®O hrough © are on page 10 www.irf.com 

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12/03/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>RDS(on)<br>VGS(th)<br>IGSS<br>IDSS|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>Drain-to-Source Breakdown Voltage<br>80<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>JBreakdown Voltage Temp. Coefficient –––     0.09    –––     V/°C    Reference to 25°C, ID= 1mA<br>Static Drain-to-Source On-Resistance<br>–––<br>24<br>29<br>mΩ<br>VGS= 10V, ID= 18A<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 80V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 64V, VGS= 0V, TJ= 150°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -20V<br>Drain-to-Source Leakage Current<br>~~EEE~~<br>~~es~~<br>~~es~~<br>~~®~~<br>~~ss~~<br>@<br>~~es~~<br>~~ee eee~~<br>~~|~~TT<br>~~a~~|
|---|---|



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br>gfs<br>Forward Transconductance<br>34<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––      37      56                I<br>Qgs<br>Gate-to-Source Charge<br>–––<br>11<br>–––<br>nC<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>12<br>–––<br>td(on)<br>Turn-On Delay Time<br>–––<br>12<br>–––<br>tr<br>Rise Time<br>–––<br>25<br>–––<br>td(off)<br>Turn-Off Delay Time<br>–––<br>37<br>–––<br>tf<br>Fall Time<br>–––<br>13<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>1710<br>–––<br>Coss<br>Output Capacitance<br>–––<br>270<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>33<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>1780<br>–––<br>Coss<br>Output Capacitance<br>–––<br>170<br>–––<br>ns<br>ee<br>ee ee<br>ee<br>~~a~~<br>~~rene~~<br>~~es~~<br>~~a~~<br>ee<br>~~es~~<br>~~—————————E~~<br>~~—+3—————_— +} —~~<br>Rs~~eG~~<br>Rs~~eG~~<br>eseG<br>Rs|**Conditions**<br>VDS= 25V, ID= 18A<br>–––      37      56                ID= 18A<br>VDS= 40V<br>VGS= 10V<br>VDD= 40V<br>ID= 18A<br>RG= 9.1Ω<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>VGS= 0V,  VDS= 64V,  ƒ = 1.0MHz<br>~~@~~<br>~~;~~|= 1.0V,  ƒ = 1.0MHz<br>= 64V,  ƒ = 1.0MHz|
|---|---|---|
|Cosseff.<br>Effective Output Capacitance<br>–––<br>330<br>–––|VGS= 0V, VDS= 0V to 64V|= 0V to 64V<br>:|



## **Avalanche Characteristics** 

|~~>~~|**Parameter**<br>~~>~~|**Min.**<br>~~>~~|**Typ. **<br>~~>~~|**Max. **<br>~~>~~|**Units**<br>~~>~~|**Conditions**<br>~~>~~|
|---|---|---|---|---|---|---|
|IS<br>~~>~~<br>~~re~~|Continuous Source Current<br>(Body Diode)<br>~~>~~<br>~~Seay~~<br>~~re~~|–––<br>~~>~~<br>~~Seay~~|–––<br>~~>~~<br>~~Seay~~|38<br>~~>~~<br>~~Seay~~|~~>~~<br>~~Seay~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~>~~<br>a<br>~~®~~|
|ISM<br>~~re~~|Pulsed Source Current<br>(BodyDiode)<br>~~Seay~~<br>~~re~~|–––<br>~~Seay~~<br>~~es~~|–––<br>~~Seay~~|150<br>~~Seay~~|||
|VSD<br>~~re~~<br>~~ee~~|Diode Forward Voltage<br>~~re~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~|–––|1.3|V|TJ= 25°C, IS= 18A, VGS= 0V<br>~~®~~|
|trr<br>~~re~~<br>~~ee~~|Reverse Recovery Time<br>~~re~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|77|–––|ns|TJ= 25°C, IF= 18A<br>di/dt = 100A/µs<br>~~®~~<br>~~:~~|
|Qrr<br>~~a~~|Reverse RecoveryCharge|–––|210|–––|nC||
|ton<br>~~a~~|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~:~~|||||



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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br> 100 6.0V5.5V Ss<br>5.0V<br>BOTTOM 4.5V<br> 10<br> 1 4.5V<br>a a eel<br>0.1 2A AN<br>20µs PULSE WIDTH<br>So ir T  = 25J ° C<br>0.01<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br>1000.00<br>——<br>T = 25°C<br>J<br>100.00 Pf }<br>| _| et TJ = 175°C<br>= er<br>A R<br>10.00 A p | | |<br>—————<br>P+ VDS = 25V<br>20µs PULSE WIDTH<br>Hf<br>1.00<br>4.0 6.0 8.0 10.0 12.0 14.0 16.0<br>VGS, Gate-to-Source Voltage (V)<br>D<br>I   ,  Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V ion<br>5.5V<br> 100 5.0V<br>BOTTOM 4.5V<br> 10 —— i ————s 4.5V _——_————<br> 1 ALT<br>aCi 20µs PULSE WIDTHT  = 175J ° C<br>0.1 7<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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3.0<br>ID = 38A<br>2.5 Seeeeeeeeeey<br>See<br>2.0<br>PEEP<br>PTT tT tT tT tT |PAL<br>1.5 EEE EE<br>1.0 Seentpt}deen<br>pp<br>0.5<br>tte ttt<br>SePC Ee V GS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>Tj, Junction Temperature (__) °<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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12<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ ID= 18A<br>Ciss   = Cgs + Cgd,  Cds SHORTEDiss   = Cgs + Cgd,  Cds SHORTED  = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED<br>V = 40V<br>-— Crss   = Cgd rss   = Cgd  = Cgd gd  10 DS _|<br>10000 | | Coss  = Cds + Cgdoss  = Cds + Cgd= Cds + Cgdds + Cgd+ Cgdgd | VDS= 64V YH|<br>V = 16V<br>8 DS<br>eee Cississ p |<br>1000 So 6 f F<br>C<br>FSS oss Eero 4 a ee ee ee<br>100 P N ee f p<br>2<br>C<br>rss<br>ee aon 7 ee<br>10 e e 0 h e a<br>1 10 100 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br> 100 100<br>eee Heroes SXcEcls|<br> 10 T  = 175      CJ ° 10 100µsec<br>1msec<br>T  = 25      CJ °<br> 1 1<br>ee oe SAH A<br>Tc = 25°C 10msec<br>Tj = 175°C<br>esa ee V      = 0 V GS Beri Single Pulse Le lll<br>0.1 0.1<br>0.0 0.5 1.0 1.5 2.0 1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS, Drain-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100000<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTEDiss   = Cgs + Cgd,  Cds SHORTED  = Cgs + Cgd,  Cds SHORTEDgs + Cgd,  Cds SHORTED+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED<br>-— Crss   = Cgd rss   = Cgd  = Cgd gd<br>10000 | | Coss  = Cds + Cgdoss  = Cds + Cgd= Cds + Cgdds + Cgd+ Cgdgd<br>eee Cississ<br>1000 So<br>C<br>FSS oss Eero<br>100 P N ee<br>C<br>rss<br>ee aon<br>e e<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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40<br>Be “A LIMITED BY PACKAGE vos<br>ae<br>30 fa. eeeeeeee y pur.<br>-<br>~ Ro '<br>LEENA ELE 7<br>PEPE ENGL 3 Nes ≤ 1<br>20 Pedy EEN ≤ 0.1 %<br>Fig 10a.   Switching Time Test Circuit<br>Pete EEN.<br>10<br>VDS<br>90%<br>0<br>25 50 75 100 125 150 175 |<br>T   , Case TemperatureC (  C)° |<br>10%<br>PoPePeEEE A VGS AY.|\« p< >!| le<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>a a a ee ee ee<br>eeee<br> 1 Pe<br>D = 0.50<br>S 0.20 e ee ee ee<br>an 0.10 a<br>P DM<br>0.05<br>0.1 g 0.02 SINGLE PULSE eee || t 1<br>0.01 (THERMAL RESPONSE) t 2<br>Poo | TE<br>PL T Notes:<br>1. Duty factor D = t   / t1 2<br>ee | 2. Peak T J = P DM x  Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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320<br>15V I D<br>TOP 7.3A<br>13A<br>VDS L DRIVER 240 Keefe f BOTTOM 18A<br>At fd<br>R G D.U.T + P E<br>- [V][DD]<br>IAS A 160<br>f 20V KNEE<br>tp 0.01Ω<br>** BNNGNSEE EEE<br>Fig 12a.   Unclamped Inductive Test Circuit<br>80<br>PSN<br>pot PSS<br>V(BR)DSS(BR)DSS 0 pt | SS<br>7 tp 25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br>7 tp<br>/ / |<br>IAS _AL<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>VG<br>an ~— _<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>| lst .3µF<br>+<br>D.U.T. -VDS<br>VGS<br>_é<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>a a LINE A<br>Note: "P" in assembly line position ASSEMBLY eal<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL ><br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY iat WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO os 56IRFU120919A78 YEAR 9 =  1999DATE CODEWEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT  CODE<br>PART NUMBER<br>INTERNATIONAL —<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eooeogeoo\ 4 eeoo/J<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE, GIO)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| :<br>16 mm<br>IX se] be<br>**----- End of picture text -----**<br>


NOTES : 

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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by 

Coss eff. is a fixed capacitance that gives the same 

- max. junction temperature. charging time as Coss while VDS oss while VDS while VDS DS is rising from 0 to 80% VDSS. @ Starting TJ = 25°C, L = 0.99mH © When mounted on 1" square PCB (FR-4 or G-10 Material). RG = 25Ω, IAS = 18A. For recommended footprint and soldering techniques refer ® ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, to application note #AN-994. TJ ≤ 175°C. 

charging time as Coss while VDS oss while VDS while VDS DS is rising from 0 to 80% VDSS. 

© When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

- @ Pulse width ≤ 300µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR3518TRPBF/power-mosfet-n-channel-80-v-38-a-0024-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfr3518trpbf/mosfet-n-ch-80v-38a-to-252/dp/2839491)
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