# Power MOSFET, N Channel, 100 V, 32 A, 0.044 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725960/)

**URL**: https://novapart.co/products/IRFR3411TRPBF/power-mosfet-n-channel-100-v-32-a-0044-ohm-to
**SKU**: IRFR3411TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4890
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 130W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 32A |
| Drain Source On State Resistance | 0.044ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725960/)

## PD - 95371B 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.  The straight lead, I-Pak,  version (IRFU series) is for throughhole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

## IRFR3411PbF IRFU3411PbF HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>R  = 44m Ω<br>DS(on)<br>G<br>ID = 32A<br>S<br>**----- End of picture text -----**<br>


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D-Pak I-Pak<br>IRFR3411PbF IRFU3411PbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

(Too **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32 > ,SWT TT }T""o—— ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A ET ~~ee~~ IDM Pulsed Drain Current 110 ~~ee~~ PD @TC = 25°C Power Dissipation 130 W ~~SS Se~~ Linear Derating Factor 0.83 W/°C VGS Gate-to-Source Voltage ± 20 V ~~SS~~ IAR Avalanche Current 16 A ~~SC © a~~ EAR Repetitive Avalanche Ener ~~©~~ gy 13 mJ ~~ie~~ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns TJ Operating Junction and -55  to + 175 ~~a~~ TSTG Storage Temperature Range ~~ee~~ °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.2|°C/W|
|RθJA|Junction-to-Ambient (PCB mount)*|–––|50||
|RθJA|Junction-to-Ambient|–––|110||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>es<br>~~SS~~|**Min.**<br>es<br>~~ee~~<br>~~SS~~|**Typ. **<br>es<br>|**Max. **<br>es<br>|**Units**<br>es<br>|**Conditions**<br>~~——~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~SS~~|100<br>~~ee~~<br>~~es~~<br>~~SS~~|–––<br>~~es~~<br>|–––<br>~~es~~<br>|V<br>~~es~~<br>|VGS= 0V, ID= 250µA<br>~~——~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ss~~<br>~~SS~~|–––<br>~~ss~~<br>~~SS~~|0.12<br>~~ss~~<br>|–––<br>~~ss~~<br>|V/°C<br>~~ss~~<br>|Reference to 25°C, ID= 1mA<br>~~——~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~nn~~<br>~~SS~~|–––<br>~~nn~~<br>~~SS~~|36<br>|44<br>|mΩ<br>|VGS= 10V, ID= 16A<br>®<br>~~——~~|
|VGS(th)|Gate Threshold Voltage<br>~~en~~<br>~~SS~~|2.0<br>~~en~~<br>~~SS~~|–––<br>~~en~~<br>|4.0<br>~~en~~<br>|V<br>~~en~~<br>|VDS= VGS, ID= 250µA<br>~~——~~|
|gfs|Forward Transconductance<br>~~SS~~|21<br>~~SS~~|–––<br>|–––<br>|S<br>|VDS= 50V, ID= 16A<br>~~——~~|
|IDSS|Drain-to-Source Leakage Current<br>~~SS~~<br>~~po~~|–––<br>~~SS~~<br>~~po~~|–––<br><br>~~po~~|25<br><br>~~po~~|µA<br> <br>~~po~~|VDS= 100V, VGS= 0V<br>~~——~~<br>~~po~~|
|||–––<br>~~SS ~~<br>~~po~~|–––<br> <br>~~po~~|250<br> <br>~~po~~||VDS= 80V, VGS= 0V, TJ= 150°C<br> ~~——~~<br>~~po~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~po~~<br>~~Pe~~|–––<br>~~po~~|–––<br>~~po~~|100<br>~~po~~|nA<br>~~po~~|VGS= 20V<br>~~po~~|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|Qg|Total Gate Charge|–––|48|71|nC|ID= 16A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs|Gate-to-Source Charge|–––|9.0|14|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|14|21|||
|td(on)<br>ee|Turn-On Delay Time|–––|11|–––|ns|VDD= 50V<br>ID= 16A<br>RG= 5.1Ω<br>VGS= 10V, See Fig. 10<br>®|
|tr<br>ee<br>ee|Rise Time|–––|35|–––|||
|td(off)<br>ee<br>ee<br>~~ne~~|Turn-Off Delay Time<br>~~ne~~|–––<br>~~nr~~|39<br>~~nr~~|–––|||
|tf<br>ee<br>~~ne~~|Fall Time<br>~~ne~~|–––<br>~~nr~~|35<br>~~nr~~|–––|||
|LD<br>~~ne~~<br>~~es~~|Internal Drain Inductance<br>~~ne~~<br>~~**a**c~~|–––<br>~~nr~~<br>~~c~~|~~nr~~<br>~~c~~|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~&)~~|
|LS<br>~~ne~~<br>~~es~~|Internal Source Inductance<br>~~ne ~~<br>~~**a**c~~|–––<br> ~~nr~~<br>~~c~~|~~nr~~<br>~~c~~|–––|||
|Ciss<br>~~es~~|Input Capacitance<br>~~**a**c~~|–––<br>~~c~~|1960<br>~~c~~|–––|pF<br>~~OK)~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~&)~~|
|Coss<br>~~es~~<br>~~ee~~|Output Capacitance<br>~~**a**c~~|–––<br>~~c~~|250<br>~~c~~|–––|||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~OK)~~|–––<br>~~OK)~~|40<br>~~OK)~~|–––<br>~~OK)~~|||
|EAS<br>~~ee~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~OK)~~|–––<br>~~OK)~~|700<br>~~OK)~~|185<br>~~OK)~~|mJ<br>~~OK)~~|IAS= 16A, L = 1.5mH|



## **Source-Drain Ratings and Characteristics** 

|~~es~~|**Parameter**<br>~~es~~|**Min. **<br>~~7~~|**Typ. **<br>~~7~~|**Max.**<br>~~7~~|**Units**<br>~~7~~|**Conditions**<br>~~7~~|**Conditions**<br>~~7~~|
|---|---|---|---|---|---|---|---|
|IS<br>~~es~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~es~~<br>|–––<br>~~7~~<br>|–––<br>~~7~~<br>~~-~~<br>|33<br>~~7~~<br>|~~7~~|G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~7~~<br>~~(ae~~|S<br>D<br>~~7~~<br>~~(ae~~|
|ISM<br>~~es~~<br>~~ee~~<br>~~es~~|Pulsed Source Current<br>(BodyDiode)<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~7~~<br>~~ee~~|–––<br>~~7~~<br>~~-~~<br>~~ee~~|110<br>~~7~~<br>~~ee~~||||
|VSD<br>~~ee~~<br>~~es~~|Diode Forward Voltage<br><br>~~es~~|–––<br>|–––<br>~~-~~<br><br>~~es~~|1.2<br><br>~~es~~|V<br>~~es a~~|TJ= 25°C, IS= 16A, VGS= 0V<br>~~(ae~~<br>~~aa~~||
|trr<br>~~es~~<br>~~———~~|Reverse Recovery Time<br>~~es~~<br>~~———~~|–––<br>~~———~~|115<br>~~———~~<br>~~es~~|170<br>~~———~~<br>~~es~~|ns<br>~~———~~<br>~~es a~~|TJ= 25°C, IF= 16A<br>di/dt = 100A/µs<br>~~———~~<br>~~aa~~||
|Qrr<br>~~es~~<br>~~———~~|Reverse RecoveryCharge<br>~~es~~<br>~~———~~|–––<br>~~———~~|505<br>~~———~~<br>~~es~~|760<br>~~———~~<br>~~es~~|nC<br>~~———~~<br>~~es a~~|||
|ton<br>~~———~~|Forward Turn-On Time<br>~~———~~<br>~~ny~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~———~~<br>~~es aa~~<br>~~ny~~||||||



RG = 25 Ω , IAS = 16A. (See Figure 12) ©) ISD ≤ 16 A , di/d ot ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint dering techniques refer to application note #AN-994. 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100 a ie  100 a it<br>all | eporen | |<br>2 |<br>4.5V<br> 10 Zo n 4.5V ||  10 Sr erty CUM<br>FO SF i<br> 1 T oc 20µs PULSE WIDTHT  = 25J °C  1 A y | 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.5<br>———— T ID = 33A _T<br>a 3.0 PCECCCEEEEEEEE<br>a EEL<br>a P T<br>2.5<br>Pt ty | eetT eT ty tf PEELETO<br>T  = 25  CJ ° 2.0<br> 100 Pry Ey | POCO ve<br>————a 1.5 EEEECECECECCEe LEE<br>=== T  = 175  CJ ° | Va<br>a ee COTTA<br>1.0<br>rT ae _ TTT TT tT tT |<br>Yr rrereyey OTe<br>rvawtt ttt] tl 0.5 Pear<br> 10 VET yp  oo V      = 50V20µs PULSE WIDTHDS 0.0 PCEFEETEh VGS TTT] = 10V<br>4.0 V     , Gate-to-Source Voltage (V)5.0GS 6.0 7.0 8.0 9.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 120(  C)° 140 160 180<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3000<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>2500 _—- CCrssoss == CCgdds + Cgd<br>St<br>2000 Ciss<br>eS<br>|<br>1500<br>SSO<br>1000 NCTE<br>Coss<br>500 SeDNee | alll<br>Crss<br>P SR STCTT<br>0<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 1000<br> 100<br>T  = 175  CJ °<br> 10<br>T  = 25  CJ °<br> 1<br>SA p p<br>fe V      = 0 V GS<br>0.1 Lo iy | tf tT<br>0.2 0.6 1.0 1.4 1.8<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID = 16A<br>VDS = 80V<br>Td VDS = 50V TT<br>16 Pt [| VDS = 20V |<br>pf yw |<br>12<br>fA;<br>8 HEE AE<br>4a<br>4<br>TIA TT<br>PT<br>FOR TEST CIRCUIT<br>0 Vi[| | a SEE FIGURE       13<br>0 20 40 60 80<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>100µsec<br>10<br>1msec<br>1 S E E<br>TA = 25°C 10msec<br>T = 175°C<br>J<br>etrs meceeeeeie: Maree<br>Single Pulse<br>0.1 1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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35 P| | tT | | rT tT tT | Vos RR<br>30 PT<br>aN Ree Ves DUT<br>25 P| | AT TE tt Re —_<br>-<br>Bea ReeNee eee<br>20 P|P| | dt | | INETTT ≤ 1<br>15 PF | | | dTtT dT| || rTTP INTN TT }+Duty FactorVos ≤ 0.1 %<br>P| | tT | | tT | rT TN TT 1<br>10 P| | dt | | tT tT | | AG<br>Rew Fig 10a. Switching Time Test Circuit<br>5 P| | TdT dT dT | | | TA VDS<br>90%<br>| | | | dT dT dT dT dT | | ty J<br>0 P| \<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (    C)°<br>tt tT  TT TT TT 10% \<br>/\ \<br>Fig 9.   Maximum Drain Current Vs. VGS<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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 10<br>aaa eeee eee<br>CeCeee ee eee<br> 1<br>D = 0.50<br>e SS ee SS eee<br>tt tot<br>0.20<br>m r ee ee eee eee<br>0.10 a P DM<br>0.1 0.05<br>SINGLE PULSE t 1<br>0.02<br>Pp R 0.01 (THERMAL RESPONSE) H t 2<br>a | |<br>Notes:<br>1. Duty factor D = t   / t1 2<br>PE Corn on 2. Peak T J = P DM x  Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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400<br>15V ID<br>TOP 6.5A<br>11.3A<br>BOTTOM 16A<br>VDS L DRIVER 300 SP NPE<br>RG D.U.T +<br>IAS - [V][DD] A 200<br>JL SENSE EEEEEE<br>20V<br>tp 0.01 Ω<br>ah RX fe<br>100<br>Fig 12a. Unclamped Inductive Test Circuit p SANA LT<br>V(BR)DSS PSS<br><> tp 0 Pt ft |SS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>/<br>/ y |\ Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F !<br>QG .3 µ F<br>BO | +<br>Ves CT fF D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>—_ = |<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>@ •   D.U.T. - Device Under Test<br>> Isp controlled by Duty Factor "D"<br>*Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL cS<br>OR RECTIFIER IRFR120 DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO TOR P16 PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE e a t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>a<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR P1194) P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

## www.irf.com 

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TR TRR TRL<br>-G¢OOO O 6 t oo oo f<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| x<br>16 mm =}<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

- NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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- [Supplier page](https://es.farnell.com/infineon/irfr3411trpbf/mosfet-n-ch-100v-32a-to-252aa/dp/2725960)
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