# Power MOSFET, N Channel, 100 V, 31 A, 0.039 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725959/)

**URL**: https://novapart.co/products/IRFR3410TRLPBF/power-mosfet-n-channel-100-v-31-a-0039-ohm-to
**SKU**: IRFR3410TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3650
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.039ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725959/)

## PD - 955144 IRFR3410PbF IRFU3410PbF 

## HEXFET Power MOSFET 

**Applications** High frequency DC-DC converters : Lead-Free 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

| Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

**VDSS RDS(on) max ID 100V 39m** Ω **31A** a eeee D-Pak I-Pak IRFR3410 IRFU3410 

**Absolute Maximum Ratings** a **Symbol Parameter Max. Units** ~~es~~ VDS Drain-Source Voltage ~~rs~~ 100 V VGS                                     Gate-to-Source Voltage ± 20 ~~eS ee a~~ ID @ TC = 25°C Continuous Drain Current, V ~~a~~ GS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A IDM Pulsed Drain Current 125 ~~es~~ PD @TC = 25°C Maximum Power Dissipation 110 W ~~a~~ PD @TA = 25°C Maximum Power Dissipation 3.0 Linear Deratin ~~a~~ g Factor                                                                     0.71                                 mW°C ~~es~~ dv/dt Peak Diode Recovery dv/dt 15 V/ns TJ Operating Junction and -55  to + 175 °C ~~SE~~ TSTG ~~a~~ Storage Temperature Range ~~[:]~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) pf ~~ft~~ 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.4|°C/W|
|RθJA|Junction-to-Ambient (PCB mount)*|–––|40||
|RθJA|Junction-to-Ambient|–––|110||



> Notes ® hrough © are on page 10 

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1 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.11   –––     V/°C    Reference to 25°C, ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>34<br>39<br>mΩ<br>VGS= 10V, ID= 18A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 100V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 80V, VGS= 0V, TJ= 150°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -20V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>ee<br>~~Ge Ge~~<br>~~es~~<br>~~en~~<br>~~es~~<br>~~es ee~~<br>~~®~~<br>~~a~~<br>~~®~~<br>~~es~~<br>~~es~~<br>~~|~~<br>[|~~[|~~<br>~~|~~ft<br>~~ee~~<br>ee ee|
|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>33<br>–––<br>–––<br>S<br>VDS= 25V, ID= 18A<br>Qg<br>Total Gate Charge<br>–––     37      56                ID= 18A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>10<br>–––<br>nC<br>VDS= 50V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>11<br>–––<br>VGS= 10V,<br>td(on)<br>Turn-On Delay Time<br>–––<br>12<br>–––<br>VDD= 50V<br>tr<br>Rise Time<br>–––<br>27<br>–––<br>ID= 18A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>40<br>–––<br>RG= 9.1Ω<br>tf<br>Fall Time<br>–––<br>13<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>1690<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>220<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>26<br>–––<br>pF<br>ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>1640<br>–––<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>130<br>–––<br>VGS= 0V,  VDS= 80V,  ƒ = 1.0MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>250<br>–––<br>VGS= 0V, VDS= 0V to 80V<br>ns<br>es<br>~~ee ee~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~**ee** ~~~~**ee**~~<br>~~ee~~<br>~~®~~<br>~~a~~<br>~~eses~~<br>~~es~~<br>~~ee ~~ee<br>~~ee ee~~<br>~~®~~<br>~~ee~~<br>a~~ee~~<br>ee<br>es<br>aes<br>eses<br>es<br>ee ee<br>©|
|**Avalanche Characteristics**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>140<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>18<br>A<br>a OO<br>esQQ<br>ee ek©|
|**Diode Characteristics**|
|S<br>D<br>G<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(BodyDiode)<br>–––<br>–––<br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 18A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>84<br>–––<br>ns<br>TJ= 25°C, IF= 18A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>260<br>–––<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>31<br>125<br>es<br>~~ee es~~<br>~~ee ee~~<br>~~ee eee~~<br>~~a~~<br>~~eee~~<br>~~é~~<br>~~ee~~<br>~~ee~~ es ee<br>~~ee~~<br>~~®~~<br>~~Pe~~|
|2<br>www.irf.com|



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100<br>rove<br>vov TT) gt gt<br>6.0V ein —<br>el” aa<br>4.5V<br>10 Agim<br>Sameenameen aameer tlaameenil tlaameenilaameenil<br>aoe 7 A a ee<br>eeHCAAniAni | |<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1 A ell<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 100<br>rov HEF LEH rove<br>vov tHE EEE ELE vov TT) gt gt<br>6.0V Bal 6.0V ein —<br>100 Sy dE el” aa<br>4.5V<br>Se ee emeamnlil| 10 Agim<br>mee A sil Sameenameen aameer tlaameenil tlaameenilaameenil<br>10 e yy,i TL LHI aoe 7 A a ee<br>e y, eeto e ee 4.5V eee HCAAnieeHCAAniAni | |<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 OTHE cl 1 A ell<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 3.0<br>ID = 30A<br>Ee es es es es es es es es ee V = 10V<br>a ee ee ee ee ee ee eee GS  y,<br>100 p i) | | | | 2.0 VA<br>T = 175°C<br>J<br>|_wa | | fF |] 7T  J| |<br>oat FO L LLL<br>10 Pp ACTif TJ = 25°C TEE} 1.0 o O LLEL y ELL<br>o e re ee ee pea<br>ie _t |ae<br>V = 50V<br>DS<br>1 p ee 20µs PULSE WIDTH 0.0 LEEEEEEL<br>4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss     = Cgs  + Cgd,   Cds     SHORTED<br>Crss     = Cgd<br>10000 Coss    = Cds  + Cgd<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>10 Ft | fT ET Es<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.0<br>100.0<br>TJ = 175°C<br>a i 4 Gee eee<br>10.0<br>1.0<br>T = 25°C<br>J<br>V = 0V<br>GS<br>fp<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 18A VDS= 80V<br>VDS= 50V<br>16<br>VDS= 20V<br>12<br>8<br>4<br>0<br>0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>GRD el LE<br>100µsec<br>10<br>1msec<br>1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>Single Pulse<br>0.1 Ht<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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32 _ V Re,<br>LIMITED BY PACKAGE<br>28<br>24 ~ R<br>-<br>20<br>16 N ee 1 Vos ≤ 1<br>≤ 0.1 %<br>12 T AT me<br>8 Fig 10a.   Switching Time Test Circuit<br>4 VDS<br>90%<br>0<br>25 50 75 100 125 150 175 |<br>|<br> TC , Case Temperature (°C)<br>|<br>10%<br>VGS | |<br>| | | | | [TN AY.<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br>10<br>FO a PpPELEEE EFER EE<br>a | |<br>1<br>e D = 0.50 eee ian<br>0.20<br>0.10 Saar<br>0.1 0.05<br>0.02<br>0.01 ee | |<br>0.01 P TT |EE<br>e e SINGLE PULSE<br>FO E ( THERMAL RESPONSE ) EROE EER<br>P E<br>0.001 FT ET EN$EN CE EEEETTT<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br> thJC )<br>Thermal Response ( Z<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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250<br>200<br>N ene<br>150<br>100<br>N \GHEEEE<br>50<br>E RNE<br>0<br>-CESSSESSS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>t hy<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>0<br>_ tp -CESSSESSS<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>/al Vs. Drain Current<br>IAS<br>Fig 12b.   Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>QG .3µF<br>LL ity +<br>Ves Tre D.U.T. | -VDS<br>[Fa= QGS QGD<br>VGS<br>VG 3mA<br>oh IG ID<br>Charge Current Sampling Resistors<br>Fig 13a.   Basic Gate Charge Waveform Fig 13b.   Gate Charge Test Circuit<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL CN<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY al WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO a 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>PART NUMBER<br>INTERNATIONAL ——<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeooooo\ | oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CCE, OI) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. © Coss eff. is a fixed capacitance that gives the same charging time @ Starting TJ = 25°C, L = 0.85mHJ = 25°C, L = 0.85mH= 25°C, L = 0.85mH as Coss while VDS is rising from 0 to 80% VDSS 

@ Starting TJ = 25°C, L = 0.85mHJ = 25°C, L = 0.85mH= 25°C, L = 0.85mH RG = 25Ω, IAS = 18A. ® ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

© Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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