# Power MOSFET, N Channel, 55 V, 59 A, 0.0145 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2101419/)

**URL**: https://novapart.co/products/IRFR2905ZPBF/power-mosfet-n-channel-55-v-59-a-00145-ohm-to-252
**SKU**: IRFR2905ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4690
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 59A |
| Drain Source On State Resistance | 0.0145ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2101419/)

PD - 95943B 

## IRFR2905ZPbF IRFU2905ZPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 14.5m Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


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I-Pak<br>D-Pak<br>IRFU2905ZPbF<br>IRFR2905ZPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~rr~~|**Parameter**<br>~~rr~~|**Max.**<br>~~ne~~|**Units**<br>~~ne~~|
|---|---|---|---|
|ID@ TC= 25°C<br>~~rr~~|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~LG~~<br>~~rr~~|59<br>~~LG~~<br>~~ne~~|A<br>~~ne~~<br>~~a~~|
|ID@ TC= 100°C <br>~~rr~~|Continuous Drain Current, VGS@ 10V<br>~~rr~~|42<br>~~ne~~||
|ID@ TC= 25°C<br>~~rr~~|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~rr~~<br>~~LG~~|42<br>~~ne~~<br>~~LG~~||
|IDM<br>~~rr~~|Pulsed Drain Current<br>~~rr~~<br>~~a~~|240<br>~~ne~~<br>~~a~~||
|PD@TC= 25°C<br>~~rr~~|Power Dissipation<br>~~rr~~|110<br>~~ne~~|W<br>~~ne~~|
||Linear Derating Factor<br>~~a~~|0.72<br>~~a~~|W/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br><br>~~a~~|55<br><br>~~a~~|mJ<br>~~|~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br><br>~~LG~~|82<br><br>~~LG~~||
|IAR|Avalanche Current<br><br>~~LG~~<br>~~oes~~|See Fig.12a, 12b, 15, 16<br><br>~~LG~~|A<br>~~|~~|
|EAR|Repetitive Avalanche Energy<br>~~re~~||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~re~~|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>~~re~~|300 (1.6mm from case )||
||Mounting Torque, 6-32 or M3 screw<br>~~re~~<br>~~Le~~|10 lbf in (1.1N m)<br>~~Le~~|~~Le~~|



HEXFET[®] is a registered trademark of International Rectifier. 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~ds~~|**Typ.**<br>~~ds~~|**Max. **<br>~~ds~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|55<br>~~es~~<br>~~ds~~<br>~~Ge~~|–––<br>~~es~~<br>~~ds~~<br>~~Ee~~|–––<br>~~es~~<br>~~ds~~<br>~~sd~~|V<br>~~es~~<br>~~sd~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ds~~<br>~~ee~~<br>~~Ge~~<br>~~es~~|0.053<br>~~ds~~<br>~~ee~~<br>~~Ee~~<br>~~ds~~|–––<br>~~ds~~<br>~~ee~~<br>~~sd~~<br>~~ds~~|V/°C<br>~~ee~~<br>~~sd~~|Reference to 25°C, ID= 1mA<br>~~ee~~<br>~~©~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~Ge ~~<br>~~es~~<br>~~es~~<br>~~sn~~|11.1<br>~~ee~~<br> ~~Ee ~~<br>~~es~~<br>~~ds~~<br>~~sn~~|14.5<br>~~ee~~<br> ~~sd~~<br>~~es~~<br>~~ds~~|mΩ<br>~~ee~~<br>~~sd~~<br>~~es~~|VGS= 10V, ID= 36A<br>~~ee~~<br>~~es~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|2.0<br>~~es ~~<br>~~es~~<br>~~sn~~<br>~~Ge~~|–––<br> ~~ds~~<br>~~es~~<br>~~sn~~<br>~~Ee~~|4.0<br>~~ds~~<br>~~es~~<br>~~sd~~|V<br>~~es~~<br>~~sd~~|VDS= VGS, ID= 250µA<br>~~©~~<br>~~es~~|
|gfs|Forward Transconductance<br>~~ee~~|20<br>~~sn~~<br>~~ee~~<br>~~Ge~~<br>~~ee~~|–––<br>~~sn~~<br>~~ee~~<br>~~Ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~sd~~<br>~~ee~~|S<br>~~ee~~<br>~~sd~~<br>~~eee~~|VDS= 25V, ID= 36A<br>~~ee~~<br>~~eee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~Ge ~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br> ~~Ee ~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br> ~~sd~~<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~sd~~<br>~~ee~~<br>~~eee~~|VDS= 55V, VGS= 0V<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~|–––<br> ~~ee ~~<br>~~ee~~|200<br> ~~ee ~~<br>~~ee~~|nA<br> ~~eee~~<br>~~ee~~|VGS= 20V<br>~~eee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~FT|~~<br>~~ee~~|–––<br>~~ee~~<br>~~FT|~~<br>~~es~~|-200<br>~~ee~~<br>~~FT|~~||VGS= -20V<br>~~ee~~|
|Qg|Total Gate Charge<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~FT|~~<br>~~es~~<br>~~ee~~<br>~~e~~~~**e**~~|29<br>~~ee~~<br>~~FT|~~<br>~~es~~<br>~~es~~<br>~~**es**~~|44<br>~~ee~~<br>~~FT|~~<br>~~es~~|nC<br>~~ee~~<br>~~sd~~|VGS= 10V<br>ID= 36A<br>VDS= 44V<br>~~ee~~<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~e~~~~**e**~~<br>~~e~~|7.7<br>~~es~~<br>~~es~~<br>~~**es**~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~e~~~~**e**~~<br>~~e~~<br>~~Gs~~|12<br>~~**es**~~<br>~~ns~~|–––<br>~~sd~~|||
|RG|Gate Input Resistance<br>~~ee~~<br>~~en~~|–––<br>~~e~~~~**e** ~~<br>~~e~~<br>~~en~~<br>~~Gs~~<br>~~es~~|1.3<br> ~~**es**~~<br>~~en~~<br>~~ns~~<br>~~ee~~|–––<br>~~en~~<br>~~sd~~|Ω<br>~~en~~<br>~~sd~~|f = 1MHz, open drain<br>~~©~~<br>~~en~~|
|td(on)|Turn-On DelayTime<br>~~en~~<br>~~es~~|–––<br>~~en~~<br>~~Gs~~<br>~~es~~<br>~~es~~<br>~~ee~~|14<br>~~en~~<br>~~ns ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~en~~<br> ~~sd~~<br>~~es~~|ns<br>~~en~~<br>~~sd~~<br>~~e~~e|VDD= 28V<br>ID= 36A<br>RG= 15Ω<br>VGS= 10V<br>~~en~~<br>e|
|tr|Rise Time<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|66<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~<br>~~es~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|31<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~ee~~<br>~~e~~|35<br>~~ee~~<br>~~e~~|–––<br>~~e~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~——H~~|–––<br>~~ee~~<br>~~——H~~|4.5<br>~~ee~~<br>~~——H~~|–––<br>~~——H~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance<br>~~es~~<br>~~——H~~|–––<br>~~ee ~~<br>~~——H~~<br>~~ee~~|7.5<br> ~~ee~~<br>~~——H~~<br>~~es~~|–––<br>~~——H~~|||
|Ciss|Input Capacitance<br>~~——H~~<br>~~es~~|–––<br>~~——H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1380<br>~~——H~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~——H~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|240<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|120<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|820<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~**ee**~~|190<br> ~~ee~~<br>~~es~~<br>~~**ee**~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~**ee**~~|300<br>~~**ee**~~|–––||VGS= 0V, VDS= 0V to 44V<br>~~@~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>100 6.0V AAO Ill 6.0V OP imma nail<br>5.5V 100 5.5V<br>5.0V a eeee 5.0V GnEHH<br>BOTTOM 4.5V ee | BOTTOM 4.5V YW HH<br>10 m ec | ET y g<br>10 4.5V<br>aati eel mel w e” Au<br>1 t nt 4.5V e+ T/A CT]<br>Ell a ee ≤  60µs PULSE WIDTH ee eal A+R ≤  60µs PULSE WIDTH<br>0.1 PC Tj = 25°C anil 1 Pr Tj = 175°C al<br>0.1 1 10 100 0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 50<br>T = 175°C<br>J<br>ee ee ee ee ee 40 a<br>100.0<br>as TJ = 175°C s _-ao4 30 nn<br>Ee = 7 2<ee ee ee eee > ——— TJ = 25°C<br>weit} Lg e<br>10.0 TJ = 25°C 20<br>fy ! | | | Va<br>FRE VDS  FF = 25V EY 10 [fF<br>≤  60µs PULSE WIDTH VDS = 15V<br>1.0 380µs PULSE WIDTH<br>iy A ne<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 0<br>0 10 20 30 40 50<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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2400 20<br>VGS   = 0V,       f = 1 MHZ ID= 36A<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>2000 CCrss  oss   = C= Cds gd + Cgd 16 VVDS= 28VVDS= 11VDS= 44V<br>1600<br>e —t | Ht e Y<br>Ciss 12<br>Ca o Va,<br>1200<br>8<br>800 a oh<br>4<br>400 e t Coss al ane<br>p S lll f{ FOR TEST CIRCUIT<br>Crss SEE FIGURE 13<br>Se e 0 ZL<br>0<br>0 10 20 30 40 50<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>10.0 10 100µsec<br>T = 25°C<br>J<br>1msec<br>1.0 1<br>10msec<br>Tc = 25°C<br>VGS = 0V Tj = 175°CSingle Pulse<br>0.1 F p 0.1 CL<br>0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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70 2.0<br>LIMITED BY PACKAGE ID = 36A<br>60 |~ VGS = 10V<br>50<br>Pea t H<br>1.5<br>2a | | | TELE LA<br>40<br>Se e e A n<br>30<br>F T INCE We<br>20 1.0<br>P N) Le<br>10<br>S aeeeN TAT<br>0<br>pj | | i iN 0.5 MELELEEELE<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.10<br>0.1 = 0.05 Sar R1 R1 R2 R2 R3R3 Ri (°C/W)    1  τ i (sec)<br>0.02 τ J τ J τ C τ 0.3962     0.00012<br>0.01 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.5693     0.00045<br>0.01 Ci=  τ i / Ri 0.4129     0.0015<br>SINGLE PULSE Ci i / Ri Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>e e |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>mi<br>20VVGS<br>tp 0.01 Ω<br>Pl y.<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>—<br>IAS a ALa<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>QGS QGD<br>VG<br>am<br>Charge<br>7<br>Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>——<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>oH D.U.T. | +-VDS<br>VGS<br>tit<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13b.** Gate Charge Test Circuit 

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240<br>                 I<br>D<br>TOP          36A<br>200<br>                8.6A<br>BOTTOM   4.8A<br>160 KEE<br>N e<br>120<br>A CE<br>80 N INE fd<br>40 S SSCEE<br>| TOSSA<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.5<br>4.0<br>T o<br>3.5<br>P RECE ID  EL = 250µA E<br>3.0<br>C P N<br>2.5<br>P CE<br>POCEEEEEP<br>2.0 SN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>NSP<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>0.01<br>avalanche losses. Note: In no<br>10 case should Tj be allowed to<br>0.05<br>exceed Tjmax<br>0.10<br>1<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>60 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>50 ID = 36A   Purely a thermal phenomenon and failure occurs at a<br>a     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>40 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>30<br>  Figures 12a, 12b.<br>P ONT<br>4. PD (ave) = Average power dissipation per single<br>20     avalanche pulse.<br>B ERR SNNGEEEE 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>10 6. Iav = Allowable avalanche current.<br>A LLEL ESN 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>BERREREEANSS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL ><br>OR RECTIFIER IRFR120 DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE e a t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

9 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL gc [SN]<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A" me | LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR P1198 P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

**==> picture [281 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>SoG Go) | eeoo]4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>7 7<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


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NOTES :<br>**----- End of picture text -----**<br>


1. OUTLINE CONFORMS TO EIA-481. 

iC) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

- Repetitive rating;  pulse width limited by 

- max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . ) Limited by TJmax, starting TJ = 25°C, L = 0.08mH ® Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 36A, VGS =10V. Part not avalanche performance. recommended for use above this value. © This value determined from sample failure population. 100% ® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

θ 

Data and specifications subject to change without notice. This product has been designed  and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

11 



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- [Supplier page](https://es.farnell.com/infineon/irfr2905zpbf/mosfet-n-ch-55v-59a-d-pak/dp/2101419)
---

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