# Power MOSFET, N Channel, 150 V, 24 A, 0.095 ohm, TO-252AA, Surface Mount
**URL**: https://novapart.co/products/IRFR24N15DTRPBF/power-mosfet-n-channel-150-v-24-a-0095-ohm-to
**SKU**: IRFR24N15DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5050
**Stock**: 1000+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.082ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.095ohm |
| Gate Source Threshold Voltage Max | 5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2725957/)
## PD - 953708 IRFR24N15DPbF IRFU24N15DPbF
## **Applications**
High frequency DC-DC converters
## **Benefits**
Low Gate-to-Drain Charge to Reduce Switching Losses | Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free
## HEXFET Power MOSFET
|**VDSS**|**VDSS**|**RDS(on) max**|**max**|**ID**|
|---|---|---|---|---|
|**150V**||**95m**Ω||**24A**|
||||||
|||D-Pak|I-Pak||
||IRFR24N15DPbF||IRFU24N15DPbF||
## **Absolute Maximum Ratings**
INTwTVAA'0T{@€V-".1]].——/—<—<~—~—T **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 24 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A ~~———_—_—_——~~ IDM Pulsed Drain Current 96 ~~eS~~ PD @TC = 25°C Power Dissipation ~~ee~~ 140 ~~ae~~ W ~~oe~~ Linear Derating Factor 0.92 W/°C VGS Gate-to-Source Voltage ± 30 V ~~a~~ dv/dt Peak Diode Recovery dv/dt 4.9 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~EE eee~~
## **Thermal Resistance**
||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.1||
|RθJA|Junction-to-Ambient (PCB mount)*|–––|50|°C/W|
|RθJA|Junction-to-Ambient|–––|110||
> Notes ® hrough ®©* , are on page 10 www.irf.com
1
09/22/10
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||||||||||
|---|---|---|---|---|---|---|---|---|
|Static @ TJ = 25°C (unless otherwise specified)|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|V(BR)DSS|es|Drain-to-Source Breakdown Voltage|150|–––|–––|V|VGS = 0V, ID = 250µA|
|∆|V(BR)DSS/|∆|TJ Breakdown Voltage Temp. Coefficient|––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA|
|es es|©|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|82|95|m|Ω|VGS = 10V, ID = 14A|
|es|®|
|VGS(th)|es|Gate Threshold Voltage|ee|3.0|–––|5.0|V|VDS = VGS, ID = 250µA|
|IDSS|EE|Drain-to-Source Leakage Current|––––––|––––––|25025|µA|VVDSDS = 150V, V = 120V, VGSGS = 0V = 0V, TJ = 150°C|
|||
|Gate-to-Source Forward Leakage|–––|–––|100|VGS = 30V|
|Ss|IGSS|Gate-to-Source Reverse Leakage|||–––|–––|-100|nA|VGS = -30V|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|es|Parameter|Min.|Typ.|Max.|Units|Conditions|
|gfs|Forward Transconductance|8.2|–––|–––|S|VDS = 25V, ID = 14A|
|a|ee|es|
|Qg|Total Gate Charge|––– 30 45 ID = 14A|
|Qgs|Gate-to-Source Charge|–––|7.4|11|nC|VDS = 120V|
|Qgd|———|Gate-to-Drain ("Miller") Charge|–––|17|26|VGS = 10V,|
|=|td(on)|ee|Turn-On Delay Time|–––|11|–––|VDD = 75V|®|
|a|tr|Rise Time|–––|53|–––|ns|ID = 14A|
|td(off)|Turn-Off Delay Time|–––|19|–––|RG = 6.8|Ω|
|tf|Fall Time|–––|15|–––|VGS = 10V|
|——<——|5|
|Ciss|Input Capacitance|–––|890|–––|VGS = 0V|
|a|Coss|Output Capacitance|–––|220|–––|VDS = 25V|
|Crss|Reverse Transfer Capacitance|–––|46|–––|pF|ƒ = 1.0MHz|
|ee|
|a|Coss|Output Capacitance|–––|1460|–––|VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz|
|a|Coss|Output Capacitance|–––|95|–––|VGS = 0V, VDS = 120V, ƒ = 1.0MHz|
|==|a|Coss eff.|Effective Output Capacitance|–––|200|–––|VGS = 0V, VDS = 0V to 120V|®|
|Avalanche Characteristics|
|a|es|Parameter|Typ.|Max.|Units|
|EAS|Single Pulse Avalanche Energy|–––|170|mJ|
|es|rs|
|IAR|Avalanche Current|–––|14|A|
|Senes|EAR|Repetitive Avalanche Energy|©|–––|14|mJ|
|Diode Characteristics|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|24|MOSFET symbol|D|
|ne|(Body Diode)|ee ee|showing the|
|ISM|Pulsed Source Current|–––|–––|96|integral reverse|G|
|Seay|(Body Diode)|p-n junction diode.|G4|S|
|VSD|Diode Forward Voltage|–––|–––|1.5|V|TJ = 25°C, IS = 14A, VGS = 0V|
|trr|Reverse Recovery Time|–––|110|–––|ns|TJ = 25°C, IF = 14A|
|SS|PO{| ||®|
|Qrr|Reverse RecoveryCharge|–––|450|–––|nC|di/dt = 100A/µs|
|ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
|ea|:|
**----- End of picture text -----**
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2
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**----- Start of picture text -----**
1000
VGS
TOP 15V
12V
100 10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
FEHR FY mana
0.001
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
eaea eee T = 175 CJ °
10 Pp YAL |
a es ee ee ee ee ee eee eee
rey A tT [ [ Jf ft fy ft yy
fey A OO OO
1 PE LE EE EE
ial S T = 25 CJ ° eeFeeee
V = 50VDS
0.1 A Fit ttl 20µs PULSE WIDTH ]
4 6 8 10 12 14 16
V , Gate-to-Source Voltage (V)GS
D
I , Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 3.** Typical Transfer Characteristics
**==> picture [213 x 473] intentionally omitted <==**
**----- Start of picture text -----**
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
5.0V
1
20µs PULSE WIDTH
4a Tj = 175°C |
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
ID = 24A
2.5
rT
2.0 PPPPEELEye
1.5 LZ
PTT TTT
1.0 Sane Petane
0.5 a |
V GS = 10V
0.0 PTPEEtT LELEEt_T_ EEL E L L ELI
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction TemperatureJ ( C)°
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
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**Fig 4.** Normalized On-Resistance Vs. Temperature
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3
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**----- Start of picture text -----**
10000 12
VGS = 0V, f = 1 MHZ ID = 14A VDS = 120V
Ciss = Cgs + Cgd, Cds SHORTED VDS = 75V
EH Crss = Cgd 10 Pt TTT VDS = 30V St
C = C + C
oss ds gd
tl Pi | VI) |_|
1000 S S Ciss n o 8 PEPE
TT A
rT hUELENUENEE LEE ,—aa
Y | TE TTIN ON OO| 6
Coss
100 PCA ow NCe) 4 FEAR
Crss
er 2
10
1 SSA 10 ee 100 | 1000 0 Jeddi Pipi pe
0 5 10 15 20 25 30 35
VDS, Drain-to-Source Voltage (V) Q , Total Gate Charge (nC)G
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
100 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
° 100
T = 175 CJ
10
—— = bet NSS SEE it
a a 10 T a SIRS 100µsec
1 pit 7, T = 25 CJ ° | | =H 1msec
1
== == = S E RAST ET
Tc = 25°C
Tj = 175°C 10msec
0.1 AE E V = 0 V GS 0.1 PE Single Pulse
0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000
V ,Source-to-Drain Voltage (V)SD VDS , Drain-toSource Voltage (V)
GS
V , Gate-to-Source Voltage (V)
I , Reverse Drain Current (A)SD
C, Capacitance(pF)
ID, Drain-to-Source Current (A)
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**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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**----- Start of picture text -----**
25
[LE] Yes Dut.
20 PP [RAL] EE EEE Yos |
PET ALE Re -
15 Pi} TE ENE '
Pi EEN EE a ≤ 1
≤ 0.1 %
10 Piety EE EWN oa ee 1
PieEEN Fig 10a. Switching Time Test Circuit
SERRE
5 Pie V90%DS
0 SERRE |
25 50 75 100 125 150 175 |
T , Case TemperatureC ( C)° |
10%
VGS | |
Fig 9. Maximum Drain Current Vs. td(on) tr td(off) tf
I , Drain Current (A)D
**----- End of picture text -----**
**Fig 9.** Maximum Drain Current Vs. Case Temperature
**Fig 10b.** Switching Time Waveforms
**==> picture [431 x 198] intentionally omitted <==**
**----- Start of picture text -----**
10
a
1
Seg ee
D = 0.50
0.20
= Ec err ei be
0.10 P DM
0.1 e 0.05 rr | t 1
SINGLE PULSE
0.020.01 (THERMAL RESPONSE) t 2
| | L E Notes:
1. Duty factor D = t / t1 2
a ei 2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)1
thJC
(Z )
Thermal Response
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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**==> picture [432 x 201] intentionally omitted <==**
**----- Start of picture text -----**
320
15V I D
TOP 5.9A
Kf f 10A
VDS L DRIVER 240 BOTTOM 14A
AY tt
R G D.U.T + URN ERE
- [V][DD]
IAS A 160
fi 20V SAE
tp 0.01 Ω
* BONNNGEE REE
Fig 12a. Unclamped Inductive Test Circuit
80
CSS
pt TS
V(BR)DSS(BR)DSS 0 PEt} | RS
7 tp 25 50 75 100 125 150 175
Starting Tj, Junction Temperature ( C)°
AS
E , Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**==> picture [125 x 97] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS(BR)DSS
7 tp
/ / |
IAS aAL
**----- End of picture text -----**
**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
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**----- Start of picture text -----**
QG
a
QGS QGD
VG
an ~— _
Charge =
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Current Regulator
Same Type as D.U.T.
50K Ω
12V .2 µ F
| lst .3 µ F
+
D.U.T. -VDS
VGS
_é
3mA
a |
IG ID
Current Sampling Resistors
**----- End of picture text -----**
**Fig 13a.** Basic Gate Charge Waveform
**Fig 13b.** Gate Charge Test Circuit
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**----- Start of picture text -----**
D.U.T + Circuit Layout Considerations
™ • Low Stray Inductance
@ • Ground Plane
• Low Leakage Inductance
| - Current Transformer
+
- - +
(0
®
Rg • dv/dt controlled by Rg +
• Driver same type as D.U.T. -
•
• D.U.T. - Device Under Test
(1) Isp controlled by Duty Factor "D"
® Driver Gate Drive
P.W.
Period D =
P.W. | Period _t
VGS=10V
t
@ D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current ii Current di/dt /
©) D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
ma
Re-Applied
Voltage Body Diode ae Forward Drop _
® Inductor Curent ee ee
Ripple ≤ 5% ISD
**----- End of picture text -----**
**Fig 14.** For N-Channel HEXFET ® Power MOSFETs
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7
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EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY INTERNATIONAL a
LOT CODE 1234 RECTIFIER IRFU120 DATE CODE
ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE ASSEMBLY LINE "A" 12 34 WEEK 16
se | LINE A
Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE i a t
OR
PART NUMBER
INTERNATIONAL a
RECTIFIER IRFU120 DATE CODE
LOGO Tea Pais P = DESIGNATES LEAD-FREE
12 34 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY IU WEEK 16
LOT CODE
A = ASSEMBLY SITE CODE
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Notes:
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**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/**
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8
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www.irf.com
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EXAMPLE: THIS IS AN IRFU120WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO a 56IRFU120919A78 PART NUMBERDATE CODEYEAR 9 = 1999WEEK 19
IN THE ASSEMBLY LINE "A"position indicates "Lead-Free" "P" in assembly line ASSEMBLYLOT CODE LINE A
Note: | | |
PART NUMBER
INTERNATIONAL —
RECTIFIER IRFU120 DATE CODE
LOGO P = DESIGNATES LEAD-FREE
56 78 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY WEEK 19
LOT CODE A = ASSEMBLY SITE CODE
**----- End of picture text -----**
## **Notes:**
## **1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com
9
**==> picture [281 x 242] intentionally omitted <==**
**----- Start of picture text -----**
TR TRR TRL
eeooooo\ | oeoo/4
16.3 ( .641 ) 16.3 ( .641 )
15.7 ( .619 ) 15.7 ( .619 )
7 7
12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
| 13 INCH
16 mm
|X a
**----- End of picture text -----**
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**----- Start of picture text -----**
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
**----- End of picture text -----**
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature.
Coss eff. is a fixed capacitance that gives the same charging time © Starting TJ = 25°C, L = 1.7mH[©] RG = 25 Ω , IAS = 14A. as Coss while VDS is rising from 0 to 80% VDSS.
- ® ISD ≤ 14A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for theIndustrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010
www.irf.com
10
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
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---
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