# Power MOSFET, N Channel, 55 V, 56 A, 0.016 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/IRFR2405TRLPBF/power-mosfet-n-channel-55-v-56-a-0016-ohm-to-252
**SKU**: IRFR2405TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4860
**Stock**: 200+
**Lead Time**: 190 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0118ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 0.016ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2839490/)
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PD - 95369A
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IRFR2405PbF
IRFU2405PbF
HEXFET [®] Power MOSFET
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Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free
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D
VDSS = 55V
R = 0.016Ω
DS(on)
G
ID = 56A
S
D-Pak I-Pak
IRFR2405 IRFU2405
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## **Description**
Seventh Generation HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through- D-Pak I-Pak
hole mounting applications. Power dissipation levels
IRFR2405 IRFU2405
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
a ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56 @
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
es IDM Pulsed Drain Current 220
a PD @TC = 25°C Power Dissipation 110 W
a Linear Derating Factor 0.71 W/°C
a VGS Gate-to-Source Voltage ± 20 V
a EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 11 mJ
eS
oo dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
eepf Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
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||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.4|°C/W|
|RθJA|Junction-to-Ambient (PCB mount)*|–––|50||
|RθJA|Junction-to-Ambient|–––|110||
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
**Units**
1
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|es|Parameter|Min.|es es|Typ.|Max.|Units|Conditions|
|V(BR)DSS|es|Drain-to-Source Breakdown Voltage|es|55|–––|–––|V|VGS = 0V, ID = 250µA|
|∆V(BR)DSS/∆TJ|es|Breakdown Voltage Temp. Coefficient|–––|0.052|–––|V/°C|Reference to 25°C, ID = 1mA|
|RDS(on)|es|Static Drain-to-Source On-Resistance|–––|0.0118 0.016|Ω|VGS = 10V, ID = 34A|@|
|VGS(th)|Por—s—aisE|Gate Threshold Voltage|2.0|–––|4.0|V|VDS = 10V, ID = 250µA|
|gfs|rs|Forward Transconductance|30|–––|–––|S|VDS = 25V, ID = 34A|
|IDSS|Drain-to-Source Leakage Current|––––––|––––––|25020|µA|VVDSDS = 55V, V = 44V, VGSGS = 0V = 0V, TJ = 150°C|
|Gate-to-Source Forward Leakage|–––|–––|200|VGS = 20V|
|IGSS|en|Gate-to-Source Reverse Leakage|–––|–––|-200|nA|VGS = -20V|
|Qg|Total Gate Charge|–––|70|110|ID = 34A|
|Qgs|Gate-to-Source Charge|–––|16|23|nC|VDS = 44V|
|ee|Qgd|Pe|Gate-to-Drain ("Miller") Charge|–––|19|29|VGS = 10V|®|
|Oe|td(on)|Turn-On Delay Time|–––|15|–––|VDD = 28V|
|a|tr|Rise Time|–––|130|–––|ns|ID = 34A|
|a|td(off)|Turn-Off Delay Time|–––|55|–––|RG = 6.8Ω|
|tf|Fall Time|–––|78|–––|VGS = 10V|
|LD|Internal Drain Inductance|–––|–––|Between lead,6mm (0.25in.)|D|
|ee|LS|Internal Source Inductance|ee|–––|–––|nH|from packageand center of die contact|G|S|
|Ciss|Input Capacitance|–––|2430|–––|VGS = 0V|
|Coss|Output Capacitance|–––|470|–––|pF|VDS = 25V|
|ee|Crss|Reverse Transfer Capacitance|–––|100|–––|ƒ = 1.0MHz, See Fig. 5|
|Coss|Output Capacitance|–––|2040|–––|VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz|
|es|Coss|Output Capacitance|–––|350|–––|fC|VGS = 0V, VDS = 44V, ƒ = 1.0MHz|
|es|Coss eff.|Effective Output Capacitance|–––|350|–––|7|Ps|VGS = 0V, VDS = 0V to 44V|
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## **Source-Drain Ratings and Characteristics**
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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|56|MOSFET symbol|D|
|(Body Diode)|showing the|
|——|—|
|ISM|Pulsed Source Current|–––|–––|220|integral reverse|G|
|(Body Diode)|p-n junction diode.|S|
|en|VSD|ee|Diode Forward Voltage|Gs|–––|ee-|–––|es|1.3|a|V|TJ = 25°C, IS = 34A, VGS = 0V|(Be®|
|SEE|trr|Reverse Recovery Time|–––|62|93|ns|TJ = 25°C, IF = 34A|
|Qrr|Reverse RecoveryCharge|–––|170|260|nC|di/dt = 100A/µs|
|—_|ton|Forward Turn-On Time|TT}|Intrinsic turn-on time is negligible (turn-on is dominated by L|®|S+LD)|
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Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.22mH
- RG = 25Ω, IAS = 34A. ISD ≤ 34A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS,
- TJ ≤ 175°C
## Pulse width ≤ 300µs; duty cycle ≤ 2%.
- Coss eff. is a fixed capacitance that gives the same charging time
- as Coss while VDS is rising from 0 to 80% VDSS
- Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
www.irf.com
2
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1000 1000
VGS VGS
TOP 15V FEE EH TOP 15V et eet
10V a 10V
8.0V a 8.0V 0 a
7.0V6.0V 0a 7.0V6.0V
5.5V5.0V 0 ll 5.5V5.0V ll
BOTTOM 4.5V BOTTOM 4.5V
1 1a SN
100 II 100
A NTI ae
See cece Ee tet
4.5V
| | pr tT TTT en Jounal
4.5V
10 7Ae Ait 20µs PULSE WIDTHT = 25J °C | 10 aLD)’e AI e n 20µs PULSE WIDTHT = 175J | °C
0.1 1 10 100 0.1 1 10 100
V , Drain-to-Source Voltage (V)DS V , Drain-to-Source Voltage (V)DS
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1000 2.5
ID = 56A
| | | | ft | | | ft fT ft 7 2.0
°
pf T = 25 CJ ef ef CECE
T = 175 CJ ° 1.5
TT ey PEPE
100
faa aan ttt eA
1.0
| [A | | | | | | [| fT 7 |_|
A 0.5 rT
PV TTL
IT tT ttt tt tl TTT TTP
V = 25VDS
20µs PULSE WIDTH VGS = 10V
10 0.0
4.0 titi 5.0 6.0 7.0 f 8.0 9.0 10.0 -60 POPEPE -40 -20 0 20 40 60 Eee 80 100 120 140 160 180
V , Gate-to-Source Voltage (V)GS T , Junction TemperatureJ ( C)°
I , Drain-to-Source Current (A)D I , Drain-to-Source Current (A)D
(Normalized)
D
I , Drain-to-Source Current (A)
DS(on)
R , Drain-to-Source On Resistance
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**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance Vs. Temperature
www.irf.com
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4000 20
VGS = 0V, f = 1MHz ID = 34A
3200 TH7 CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C SHORTEDds 16 TTaan VVVDSDSDS === 44V 27V 11V ThSe
S E Pt ty Tye
Ciss
2400 Pr 12 a aa
T_T oh OCCA
1600 8
N | ZL |
SACMMICCO = Cc
800 Coss 4
Crss FOR TEST CIRCUITSEE FIGURE 13
0 rt , Ea 0 J oo
1 10 100 0 20 40 60 80 100
V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
P| | | [| [| [ | Lob | ee ee ee e l
10us
100 PO T = 175 CJ ° A) 100 GRIP
100us
T = 25 CJ °
oe 4 A e a o
10 sr 10
1ms
T TCJ = 25 C= 175 C° ° 10ms
1 TALEPy E LE V = 0 V GS 1 Gt Single Pulse THIi eeecCCT
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
V ,Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS
C, Capacitance (pF)
GS
V , Gate-to-Source Voltage (V)
I , Drain Current (A) D
I , Reverse Drain Current (A)SD
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## **Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
www.irf.com
4
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60
LIMITED BY PACKAGE
MEK CEE . |
50
| =L | ft [| Ves D.U-T.
-
40 | | Ly yt Ro
|| tt SER
P| | | YE RN Ey fe + Ves
30 fteee{ | At | pve ft PulseDuty FactorWidth ≤ 0.1 %≤ 1 ps 1
20 fT} | ittt] Fig 10a. Switching Time Test Circuit
P| LiL KE
10 rt | | f t t| tt ttt tNEN VDSDS
90%
Pitt? y tt tt yy !
0 | | | | tf | ft tf 4 |
25 50 75 100 125 150 175 |
T , Case TemperatureC ( C)° |
I , Drain Current (A)D
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VDSDS
90%
10%
VGS \« p< >| a
td(on) tr td(off) tf
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**Fig 9.** Maximum Drain Current Vs. Case Temperature
**Fig 10b.** Switching Time Waveforms
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10
a
a a a a es re ee en ee eeOe Oe Oe Gs GO
a ee
1 eeee
D = 0.50
e 0.20 e all eee eel
0.10 Bee. —_ eee eee
PDM
0.05 see — anel
0.1
0.02 SINGLE PULSE t1
0.01 T_T (THERMAL RESPONSE) a t2
Be
Notes:
1. Duty factor D = t / t1 2
2. Peak T J = P DM x Z thJC + TC
0.01 es eee ee eee eee eee
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)1
thJC
(Z )
Thermal Response
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**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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15V
VDS L DRIVER
R G D.U.T +
- [V][DD]
IAS
1
20V
poe tp 0.01Ω
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**Fig 12a.** Unclamped Inductive Test Circuit
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V(BR)DSS
e tp —
/al|
IAS
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240
ID
PT Ty
TOP 14A
200 Ne 24A
BOTTOM 34A
PX [EET]
PN PE Ee
160
NENER
120 SNENEE EEE
BNNGNE EEE
80 | ANNA
BENNER
40 PoTAN
Pie tT Tr SS I
0 Eee,~o
25 50 75 100 125 150 175
Starting T , Junction TemperatureJ ( C)°
AS
E , Single Pulse Avalanche Energy (mJ)
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**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
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QG
re QGS QGD
VG
Charge
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**Fig 13a.** Basic Gate Charge Waveform
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Current Regulator
Same Type as D.U.T.
50KΩ
TT: 12V .2µF
Ll .3µF “t
+
D.U.T. -VDS
VGS
3mA
ae |
IG ID
Current Sampling Resistors
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**Fig 13b.** Gate Charge Test Circuit
www.irf.com
6
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Peak Diode Recovery dv/dt Test Circuit
D.U.T + Circuit Layout Considerations
™ • Low Stray Inductance
@ • Ground Plane
• Low Leakage Inductance
| - Current Transformer
+
2 ©
- - +
8 °
(0
®
Rg • dv/dt controlled by Rg +
• Driver same type as D.U.T. - Vop
•
• D.U.T. - Device Under Test
(1) Isp controlled by Duty Factor "D"
® Driver Gate Drive
P.W.
Period D =
P.W. | Period _t
VGS=10V *
t
D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current Current
, —\—_ di/dt =
©)|" D.U.T. VDS Waveform Diode Recovery a
dv/dt
VDD
ma
Re-Applied
Voltage Body Diode a Forward Drop
® Inductor Curent
a
Ripple ≤ 5% ISD
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**Fig 14.** For N-Channel HEXFET ® Power MOSFETs
www.irf.com
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EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY INTERNATIONAL
LOT CODE 1234 RECTIFIER IRFU120 DATE CODE
ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE ASSEMBLY LINE "A" 12 34 WEEK 16
LINE A
Note: "P" in assembly line position ASSEMBLY
indicates "Lead-Free" LOT CODE
OR
PART NUMBER
INTERNATIONAL coN
RECTIFIER IRFU120 DATE CODE
LOGO TeaR Poisa P = DESIGNATES LEAD-FREE
12 34 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY i a t WEEK 16
LOT CODE
A = ASSEMBLY SITE CODE
**----- End of picture text -----**
www.irf.com
8
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**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRFU120 PART NUMBER
WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO os 56IRFU120919A78 YEAR 9 = 1999DATE CODEWEEK 19
IN THE ASSEMBLY LINE "A"
LINE A
Note: position indicates "Lead-Free" "P" in assembly line ASSEMBLYLOT CODE
PART NUMBER
INTERNATIONAL ——s
RECTIFIER IRFU120 DATE CODE
LOGO P = DESIGNATES LEAD-FREE
56 78 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY WEEK 19
LOT CODE A = ASSEMBLY SITE CODE
**----- End of picture text -----**
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www.irf.com
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TR TRR TRL
$oOoOGG oO) | o$eoof4
16.3 ( .641 ) 16.3 ( .641 )
15.7 ( .619 ) 15.7 ( .619 )
CeCe) IO}
12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )
**----- End of picture text -----**
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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13 INCH
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16 mm
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NOTES :
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**----- Start of picture text -----**
1. OUTLINE CONFORMS TO EIA-481.
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Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 www.irf.com
10
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## Links
- [View this product on Novapart](https://novapart.co/products/IRFR2405TRLPBF/power-mosfet-n-channel-55-v-56-a-0016-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr2405trlpbf/mosfet-n-ch-55v-56a-to-252/dp/2839490)
---
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