# Power MOSFET, N Channel, 75 V, 42 A, 0.0128 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1013383/)

**URL**: https://novapart.co/products/IRFR2307ZPBF/power-mosfet-n-channel-75-v-42-a-00128-ohm-to-252
**SKU**: IRFR2307ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6070
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0128ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.0128ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013383/)

PD - 96191 

## **AUTOMOTIVE MOSFET** 

## IRFR2307ZPbF IRFU2307ZPbF 

## **Features** 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 75V<br>R  = 16mΩ<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 

||**Parameter**<br>~~rs~~|**Max.**<br>~~ne~~|**Units**<br>~~ne~~|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~rs~~|53<br>~~ne~~|A<br>~~ne~~<br>|
|ID@ TC= 100°C <br>~~PC~~|Continuous Drain Current, VGS@ 10V<br>~~rs~~<br>~~Pf~~<br>~~PC~~|38<br>~~ne~~<br>~~Pf~~<br>||
|ID@ TC= 25°C<br>~~PC~~~~**a**~~|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~rs~~<br>~~PC~~~~**a**~~|42<br>~~ne~~<br>||
|IDM<br>~~PC~~~~**a**~~|Pulsed Drain Current<br>~~rs~~<br>~~PC~~~~**a**~~|210<br>~~ne~~<br>||
|PD@TC= 25°C<br>~~**a**~~|Power Dissipation<br>~~rs~~<br>~~**a**~~|110<br>~~ne~~<br>|W<br>~~ne~~<br>|
||Linear DeratingFactor<br>~~Ge~~|0.70<br>~~Ge~~<br>~~O~~|W/°C<br>~~Ge~~|
|VGS|Gate-to-Source Voltage<br>~~a~~<br>~~ee~~|± 20<br>~~a~~<br>~~O~~<br>~~ee~~|V<br>~~a~~<br>~~e~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~a~~<br>~~PO~~<br>~~ee~~|100<br>~~a~~<br>~~O~~<br>~~PO~~<br>~~ee~~|mJ<br>~~a~~<br>~~e~~|
|EAS(Tested)|Single Pulse Avalanche Energy Tested Value<br>~~ee~~<br>~~es~~|140<br>~~ee~~||
|IAR|Avalanche Current<br>~~ee~~<br>~~ee~~<br>~~es~~|See Fig.12a, 12b, 15, 16<br>~~ee~~<br>~~ee~~|A<br>~~e~~|
|EAR|Repetitive Avalanche Energy<br>~~es~~||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~es~~<br>~~ee~~|-55  to + 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
||SolderingTemperature,for 10 seconds<br>~~ee~~|300 (1.6mm fromcase )<br>~~ee~~<br>~~ee~~||
||MountingTorque, 6-32or M3 screw<br>~~ee~~<br>~~a~~|10lbf in(1.1N m)<br>~~ee~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GD~~|**Typ.**<br>~~GD~~|**Max. **<br>~~I~~|**Units**<br>~~GD~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Ps~~|75<br>~~Ps~~<br>~~GD~~<br>~~rs~~|–––<br>~~Ps~~<br>~~GD~~<br>~~GO~~|–––<br>~~Ps~~<br>~~I~~<br>~~GO~~|V<br>~~Ps~~<br>~~GD~~|VGS= 0V,ID= 250µA<br>~~Ps~~<br>~~GO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~|–––<br>~~GD~~<br>~~rs~~<br>~~rs~~<br>~~GD~~|0.072<br>~~GD ~~<br>~~rs~~<br>~~GO~~<br>~~GD~~|–––<br> ~~I ~~<br>~~rs~~<br>~~GO~~<br>~~I~~|V/°C<br> ~~GD~~<br>~~rs~~<br>~~(~~|Reference to 25°C,ID= 1mA<br>~~GO~~<br>~~rs~~<br>~~~~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~rs ~~<br>~~es~~<br>~~GD~~<br>~~Gs~~|12.8<br>~~rs~~<br> ~~GO~~<br>~~es~~<br>~~GD~~<br>~~Oe~~|16<br>~~rs~~<br>~~GO~~<br>~~es~~<br>~~I~~<br>|mΩ<br>~~rs~~<br>~~es~~<br>~~(~~<br>~~CO~~|VGS= 10V,ID= 32A<br>~~rs~~<br>~~es~~<br>~~~~~<br>~~CO~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~|2.0<br>~~GD~~<br>~~ee~~<br>~~Gs~~<br>~~OD~~|–––<br>~~GD ~~<br>~~ee~~<br>~~Oe~~<br>~~OD~~|4.0<br> ~~I ~~<br>~~ee~~<br><br>~~GD~~|V<br> ~~(~~<br>~~ee~~<br>~~CO~~<br>~~GD~~|VDS= VGS,ID= 100µA<br>~~~~~<br>~~ee~~<br>~~CO~~<br>~~GOO~~|
|gfs|Forward Transconductance<br>~~ey~~|30<br>~~Gs ~~<br>~~ey~~<br>~~OD~~|–––<br> ~~Oe ~~<br>~~ey~~<br>~~OD~~|–––<br> <br>~~ey~~<br>~~GD~~|S<br> ~~CO~~<br>~~ey~~<br>~~GD~~|VDS= 25V,ID= 32A<br>~~CO~~<br>~~ey~~<br>~~GOO~~|
|IDSS|Drain-to-Source Leakage Current<br>~~EE~~|–––<br>~~OD~~<br>~~EE~~|–––<br>~~OD ~~<br>~~EE~~|25<br> ~~GD~~<br>~~EE~~|µA<br>~~GD~~<br>~~EE~~|VDS= 75V,VGS= 0V<br>~~GOO~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|250<br>~~EE~~||VDS= 75V,VGS= 0V,TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~a~~<br>~~**|**~~|–––<br>~~EE~~<br>~~a~~<br>~~ee~~<br>~~**|**~~|–––<br>~~EE~~<br>~~a~~<br>~~ee~~|200<br>~~EE~~<br>~~a~~|nA<br>~~EE~~<br>~~a~~|VGS= 20V<br>~~EE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~**|**~~|–––<br>~~a~~<br>~~ee~~<br>~~**|**~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|-200<br>~~a~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~**|**~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~**|**~~<br>~~es~~<br>~~ee~~<br>~~**e**e~~|50<br>~~ee~~<br>~~es~~<br>~~**e**s~~|75<br>~~es~~|nC|VGS= 10V<br>VDS= 60V<br>ID= 32A<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~**e**e~~<br>~~s~~|14<br>~~es~~<br>~~**e**s~~<br>~~e~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~**e**e~~<br>~~s~~<br>~~ee~~|19<br>~~**e**s~~<br>~~e~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~es~~|–––<br>~~**e**e ~~<br>~~s~~<br>~~es~~<br>~~ee~~<br>~~ee~~|16<br> ~~**e**s~~<br>~~e~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|ns<br>~~ee~~|VDD= 38V<br>ID= 32A<br>RG= 10Ω<br>VGS= 10V<br>~~@~~<br>~~ee~~<br>)|
|tr|Rise Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|65<br> ~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|44<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~|29<br> ~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~FF~~|–––<br>~~ee~~<br>~~FF~~|4.5<br>~~ee~~<br>~~FF~~|–––<br>~~ee~~<br>~~FF~~|nH<br>~~ee~~<br>~~FF~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee~~<br>)<br>~~&~~|
|LS|Internal Source Inductance<br>~~ee~~<br>~~FF~~|–––<br>~~ee~~<br>~~FF~~<br>~~ee~~|7.5<br>~~ee~~<br>~~FF~~<br>~~es~~|–––<br>~~ee~~<br>~~FF~~|||
|Ciss|Input Capacitance<br>~~FF~~<br>~~es~~|–––<br>~~FF~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2190<br>~~FF~~<br>~~es~~<br>~~es~~|–––<br>~~FF~~<br>~~es~~|pF<br>~~FF~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~&~~|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|280<br> ~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|150<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|1070<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~es~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~es~~|190<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~||VGS= 0V,VDS= 60V, ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|400<br>~~es~~<br>~~ee~~|–––||VGS= 0V,VDS= 0V to 60V<br>~~@~~|



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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>100 6.0V<br>5.5V eet ll<br>5.0V<br>BOTTOM 4.5V<br>10 A A IN| | TT<br>aaiieeasiieemariiil<br>1 | |<br>e e i 4.5V EEInI ni<br>—P| TT ≤60µs PULSE WIDTH eee<br>Tj = 25°C<br>i antl<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>Ee es es<br>Ee ee es ee<br>100<br>T = 175°C<br>J<br>ee ee 2 ee ee ee<br>10<br>pf<br>T = 25°C<br>J<br>1<br>i ae [eee] VDS = 20V<br>PH ≤60µs PULSE WIDTH<br>0.1<br>2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V 1 ane<br>100 5.0V<br>BOTTOM 4.5V<br>a D”a anni<br>10 4.5V<br>| ff i e<br>Gor<br>e e<br>H a ≤60µs PULSE WIDTH<br>Tj = 175°C<br>ta  eT<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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80<br>TJ = 25°C<br>60<br>TJ = 175°C<br>40<br>L y<br>20<br>VDS = 10V<br>380µs PULSE WIDTH<br>0<br>0 10 20 30 40 50 60 70<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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4000 20<br>VGS   = 0V,       f = 1 MHZ ID= 32A<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>CCrss   = C= Cgd + C 16 VVDS= 38VDS= 60V<br>3000 i oss   ds  gd pe VDS= 15V |<br>C 12 a<br>iss<br>2 aa<br>2000 Py or ++ een Ae<br>8<br>ic) a ae<br>1000 4<br>Coss = Ge<br>Crss<br>0<br>0 =" 0 foi 20 | 40 | 60 80<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00 100<br>1 00 µsec<br>TJ = 175°C<br>10.00 10<br>1m s ec<br>10m s ec<br>1.00 1<br>TJ = 25°C Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse DC<br>0.10 ee 0.1 The Ls CELL<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.5<br>LIMITED BY PACKAGE ID = 32A<br>50 VGS = 10V<br>en THAT HY<br>2.0<br>aS SEERETAu<br>40<br>30<br>1.5<br>NI Soeeeee 4eee<br>20<br>PNG} Peeve<br>1.0<br>10 PPETN Eee<br>0<br>0.5 aT EL ELE LEE.<br>25 PTE 50 75  TIN 100 125 150 175 = Bee<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10 R1 R1 R2 R2 Ri (°C/W)    τi (sec)<br>0.05 τJ τJ τCτ 0.7938     0.000499<br>0.020.01 τ1 τ1 τ2τ2 0.6257     0.005682<br>Ci= τi/Ri<br>0.01 Ci i/Ri<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>0.001 qa ( THERMAL RESPONSE ) HE EE ETE 2. Peak Tj = P dm x Zthjc + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>15V<br>                 I<br>D<br>TOP          3.4A<br>400                 4.6A<br>VDS L DRIVER BOTTOM   32A<br>Na<br>RG D.U.T + 300<br>- [V][DD]<br>IAS A<br>20VVGS<br>B ly tp 0.01Ω 200 NE|<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS 100<br>tp<br>SS<br>0<br>25 50 75 100 125 150 175<br>/ Starting TJ, Junction Temperature (°C)<br>IAS a |n SNGneE<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>vs. Drain Current<br>QG<br>QGS QGD 5.0<br>ID = 1.0A<br>a 4.5 PEST ID = 1.0mA<br>VG ID = 250µA<br>4.0 PPP REE ID = 100µA<br>4<br>Charge - 3.5 SSR<br>Fig 13a.   Basic Gate Charge Waveform 3.0<br>PTT [ASSN]<br>2.5 CSS<br>2.0 PETES<br>L<br>1.5<br>VCC<br>DUT<br>PPT<br>0 1.0<br>1K -75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>ned TTT TTT TTR<br>Fig 13b.   Gate Charge Test Circuit Fig 14.   Threshold Voltage vs. Temperature<br>6 www.irf.com<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆Tj = 25°C due to<br>avalanche losses<br>10<br>0.05<br>0.10<br>1<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>120 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>100 I D  = 32A   Purely a thermal phenomenon and failure occurs at a<br>KL     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>80<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>Nope   not exceeded.<br>60 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>PSSST<br>4. PD (ave) = Average power dissipation per single<br>40     avalanche pulse.<br>SSS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>COPS 7. ∆T = Allowable rise in junction temperature, not to exceed<br>BRRERRERASKS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

**EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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TR TRR TRL<br>SOOO S GO) J oeoof 4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE, -<br>12.1 ( .476 )11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 )7.9 ( .312 ) FEED DIRECTION<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>. :<br>16 mm<br>[x ae<br>NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


mies Repetitive rating;  pulse width limited by 

Coss eff. is a fixed capacitance that gives the same charging time 

as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

- max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . @ Limited by TJmax, starting TJ = 25°C, L = 0.197mH ® Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25Ω, IAS = 32A, VGS =10V. Part not avalanche performance. 

- recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%.≤ 1.0ms; duty cycle ≤ 2%. 1.0ms; duty cycle ≤ 2%.≤ 2%. 2%. 

- © his value determined from sample failure population. 100% tested to this value in production. 

@ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.≤ 1.0ms; duty cycle ≤ 2%. 1.0ms; duty cycle ≤ 2%.≤ 2%. 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

θ 

Data and specifications subject to change without notice. This product has been designed  for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2008 

www.irf.com 

11 



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- [View this product on Novapart](https://novapart.co/products/IRFR2307ZPBF/power-mosfet-n-channel-75-v-42-a-00128-ohm-to-252)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfr2307zpbf/mosfet-n-d-pak/dp/1013383)
---

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