# Power MOSFET, N Channel, 200 V, 5 A, 0.6 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725953/)

**URL**: https://novapart.co/products/IRFR220NTRLPBF/power-mosfet-n-channel-200-v-5-a-06-ohm-to-252aa
**SKU**: IRFR220NTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3240
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 43W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.6ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725953/)

## **SMPS MOSFET** 

PD- 950634 IRFR220NPbF IRFU220NPbF HEXFET ® Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses 

> | Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

**VDSS RDS(on) max (m** Ω) **ID 200V 600 5.0A** D-Pak I-Pak IRFR22ON IRFU220N 

## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~tt~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.5 A ~~————————————~~ IDM Pulsed Drain Current 20 ~~—~~ PD @TC = 25°C Power Dissipation ~~es~~ 43 ~~ie~~ W Linear Derating Factor 0.71 W/°C ~~— oo~~ VGS Gate-to-Source Voltage ± 20 V ~~ee~~ dv/dt Peak Diode Recovery dv/dt 7.5 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~eeee rr~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~ee~~ 

## **Typical SMPS Topologies** 

Telecom 48V input  Forward Converters 

> Notes ® hrough 6) are on page 10 www.irf.com 

1 12/10/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~Ee~~|**Parameter**<br>~~Ee~~|**Parameter**<br>~~Ee~~|**Min.**<br>~~Ee~~|**Typ. **<br>~~Ee~~|**Max. **<br>~~Ee~~|**Max. **<br>~~Ee~~|**Units**<br>~~Ee~~|**Conditions**<br>~~Ee~~|**Conditions**<br>~~Ee~~|**Conditions**<br>~~Ee~~|
|---|---|---|---|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Ee~~<br>~~ee~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~Ee~~<br>~~ee~~<br>~~es~~||200<br>~~Ee~~<br>~~ee~~|–––<br>~~Ee~~<br>~~ee~~|–––<br>~~Ee~~<br>~~ee~~||V<br>~~Ee~~<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~Ee~~<br>~~@~~|||
|∆V(BR)DSS/∆TJ<br>~~Ee~~<br>~~es~~<br>~~es~~|JBreakdown Voltage Temp. Coefficient –––     0.23    –––     V/°C    Reference to 25°C, I<br>~~Ee~~<br>~~es~~<br>~~es~~||–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~Ee~~|–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~Ee~~|–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~Ee~~||–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~Ee~~|–––     0.23    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~Ee~~<br>~~@~~<br>~~@~~|||
|RDS(on)<br>~~Ee~~<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~Ee~~<br>~~es~~<br>~~es~~||–––<br>~~Ee~~|–––<br>~~Ee~~<br>~~es~~|600<br>~~Ee~~||mΩ<br>~~Ee~~|VGS= 10V, ID= 2.9A<br>~~Ee~~<br>~~@~~<br>~~@~~|||
|VGS(th)<br>~~Ee~~<br>~~es~~<br>~~ss~~|Gate Threshold Voltage<br>~~Ee~~<br>~~es~~<br>~~ss~~||2.0<br>~~Ee~~<br>~~ss~~|–––<br>~~Ee~~<br>~~ss~~<br>~~es~~|4.0<br>~~Ee~~<br>~~ss~~||V<br>~~Ee~~<br>~~ss~~|VDS= VGS, ID= 250µA<br>~~Ee~~<br>~~@~~|||
|IDSS<br>~~Ee~~<br>~~er~~|Drain-to-Source Leakage Current<br>~~Ee~~<br>~~er~~<br>~~|~~TT||–––<br>~~Ee~~<br>~~er~~<br>~~|~~|–––<br>~~Ee~~<br>~~es~~<br>~~er~~<br>|25<br>~~Ee~~<br>~~er~~<br>||µA<br>~~Ee~~<br>~~er~~<br>TT|VDS= 200V, VGS= 0V<br>~~Ee~~|||
||||–––<br>~~Ee~~<br>~~er~~<br>~~|~~TT|–––<br>~~Ee~~<br>~~er~~<br>TT|250<br>~~Ee~~<br>~~er~~<br>TT|||VDS= 160V, VGS= 0V, TJ= 150°C<br>~~Ee~~|||
|IGSS|Gate-to-Source Forward Leakage<br>~~|~~<br>~~a~~||–––<br>~~|~~<br>~~a~~|–––<br><br>~~a~~|100<br><br>~~a~~||nA<br><br>~~a~~|VGS= 20V|||
||Gate-to-Source Reverse Leakage<br>~~a~~||–––<br>~~a~~|–––<br>~~a~~|-100<br>~~a~~|||VGS= -20V|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~ee~~|||||||||||
||**Parameter**<br>es||**Min.**<br>es<br>~~ee~~|**Typ. **<br>es|**Max. **<br>es||**Units**<br>es|**Conditions**|||
|gfs|Forward Transconductance<br>~~es~~||2.6<br>~~ee~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~||S<br>~~es~~|VDS= 50V, ID= 2.9A|||
|Qg|Total Gate Charge<br>~~a~~||–––<br>~~a~~|15<br>~~a~~|23                 I<br>~~a~~||23                 I<br>nC<br>~~oe~~|23                 ID= 2.9A<br>VDS= 160V<br>VGS= 10V,<br>~~;~~|||
|Qgs<br>~~a~~<br>~~Rs~~|Gate-to-Source Charge<br>~~a~~<br>||–––<br>es<br>|2.4<br>|3.6<br>||||||
|Qgd<br>~~a~~<br>~~Rs—————=~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~a~~<br>~~—————=~~||–––<br>~~ee~~<br>es<br>~~—————=~~|6.1<br>~~ee~~<br>~~oe~~|9.2<br>~~ee~~<br>~~oe~~||||||
|td(on)<br>~~a~~<br>~~Rs—————=~~|Turn-On Delay Time<br>~~a~~<br>~~—————=~~||–––<br>es<br>~~—————=~~|6.4<br>~~oe~~|–––<br>~~oe~~||ns<br>~~oe~~|VDD= 100V<br>ID= 2.9A<br>RG= 24Ω<br>VGS= 10V<br>~~;~~|||
|tr<br>~~a~~<br>~~Rs—————=~~|Rise Time<br>~~a~~<br>~~—————=~~||–––<br>es<br>~~—————=~~|11<br>~~oe~~|–––<br>~~oe~~||||||
|td(off)<br>~~a~~<br>~~Rs—————=~~|Turn-Off Delay Time<br>~~a~~<br>~~—————=~~||–––<br>es<br>~~—————=~~|20<br>~~oe~~|–––<br>~~oe~~||||||
|tf<br>~~—————=~~|Fall Time<br>~~—————=~~||–––<br>~~—————=~~|12<br>~~oe~~|–––<br>~~oe~~||||||
|Ciss<br>~~—————=~~<br>**Ps**|Input Capacitance<br>~~—————=~~<br>~~ee~~||–––<br>~~—————=~~<br>~~ee~~|300<br>~~oe~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~||pF<br>~~oe~~<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~;~~|||
|Coss<br>~~—————=~~<br>**Ps**<br>es|Output Capacitance<br>~~—————=~~<br>~~ee~~||–––<br>~~—————= ~~<br>~~ee~~|53<br> ~~oe~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~||||||
|Crss<br>**Ps**<br>es<br>es|Reverse Transfer Capacitance<br>~~ee~~||–––<br>~~ee~~|15<br>~~ee~~|–––<br>~~ee~~||||||
|Coss<br>**Ps**<br>es<br>es<br>es|Output Capacitance<br>~~ee~~||–––<br>~~ee~~|300<br>~~ee~~|–––<br>~~ee~~|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>**Ps**<br>es<br>es|Output Capacitance<br>~~ee~~||–––<br>~~ee~~|23<br>~~ee~~|–––<br>~~ee~~|||VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>**Ps**<br>es|Effective Output Capacitance<br>~~ee~~||–––<br>~~ee~~|46<br>~~ee~~|–––<br>~~ee~~|||VGS= 0V, VDS= 0V to 160V<br>®|||
|**Avalanche Characteristics**<br>®<br>Ree~~e~~|||||||||||
|Re||**Parameter**<br>e||||**Typ.**<br>e~~e~~|||**Max.**<br>~~e~~|**Units**<br>~~e~~|
|EAS<br>Re<br>O||Single Pulse Avalanche Energy<br>e<br>O~~O~~||||–––<br>e~~e~~<br>~~O~~|||46<br>~~e~~<br>~~O~~|mJ<br>~~e~~<br>~~O~~|
|IAR<br>S||Avalanche Current<br>S~~n~~<br>Oe||||–––<br>~~n~~<br>Oe|||2.9<br>~~n~~|A<br>~~n~~|
|EAR<br>S<br>©||Repetitive Avalanche Energy<br>S~~n~~<br>©<br>Oe||||–––<br>~~n~~<br>©<br>Oe|||4.3<br>~~n~~<br>©|mJ<br>~~n~~|
|**Thermal Resistance**<br>Oe|||||||||||
|||**Parameter**||||**Typ.**|||**Max.**|**Units**|
|RθJC||Junction-to-Case||||–––|||3.5|°C/W|
|RθJA||Junction-to-Ambient (PCB mount)*||||–––|||50||
|RθJA||Junction-to-Ambient||||–––|||110||



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**----- Start of picture text -----**<br>
 100  100<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V Py 8.0V a<br>7.0V 2a 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br> 10 5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 10<br>1es es re ee” ee<br> 1<br>eeFe 7 eal"4  ee<br>Pp V t am 4.5V LlHa  1 L<iAAC L 4.5V Ee<br>0.1<br>PZa a ee eeeth a v sal<br>0.01 SI a 20µs PULSE WIDTHT  = 25J °C 0.1 CVa i 20µs PULSE WIDTHT  = 175J °C HH<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 3.5<br>ID = 4.8A<br>===SS=S=S=== -—TTTITLLLLt<br>a T  = 25  CJ ° 3.0 PTT tT tT tT tT TT<br>oo PTT [TTTrTyTrr]<br>2.5 CECE err<br>Saeeeepe=—== yy<br> 10 —— —— ee ee T  = 175  CJ ° 4<br>===SS2e—-—— = 2.0 FERRE EERE<br>SS S Sac 4a<br>| | | wi | fT | [ [| f[ 7 ff 4<br>1.5<br> 1<br>i7/aaaununas 1.0 feces’ cdeeee<br>aayPr cue Gael CE 0.5 Pee|<br>V      = 50VDS<br>0.1 PARSPit TT | ER) 20µs PULSE WIDTH 0.0 EEEPE E ECeREFEETrLEC EE VGS = 10V<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20<br>10000 ID = 2.9A<br>VGS   = 0V,       f = 1 MHZ<br>= a Ciss    = Cgs + Cgd,   Cds    SHORTED py | PE VDS =  160V<br>FAH Crss    = Cgd  16 eae VDS =  100V {|<br>1000 Coss   = Cds + Cgd VDS =  40V<br>Ciss 12<br>100<br>Pr Ya<br>Coss 8<br>PET est FH y<br>Crss<br>10<br>E IT TPE 4 PeertT tt<br>FOR TEST CIRCUIT<br>SEE FIGURE       13<br>0<br>1 EEL LETH 0 AGE 5 10 15 20 25<br>1 10 100 1000 Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>p{| {| { | | et Tt 10us HH<br> 10  10<br>T  = 175  CJ °<br>4 a ee eSeee ee eee eee eee PeaEe CA srPT CT]<br>100us<br> 1 FPAe——iAtTs¢ |ee|  1 SEPH S Si L llty<br>T  = 25  CJ ° 1ms<br>ey ee ee ee eee eee eee eee  T TCJ = 25  C= 175  C° ° e l 10ms<br>0.1 oe7 | fF | jf V      = 0 V GS 0.1 p  Single Pulse f aee l ll l<br>0.4 0.6 0.8 1.0 1.2  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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5.0 NP EE PP Vos Rp<br>4.0 PN EEE TE EE Ves but<br>-<br>PLT PNET R e<br>3.0<br>pf} NE sy<br>≤ 1<br>PTTSERENEEEE TIME E csewshoun ≤ 0.1 %<br>2.0<br>ERR Fig 10a.   Switching Time Test Circuit :<br>SERRE<br>1.0 VDS<br>90%<br>Fi ttt TT Ett )<br>0.0 PET ETT TT ETE |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 10<br>a<br>D = 0.50<br> 1 e e e ne e a eeeeeenn<br>0.20<br>S 0.100.05 ne_—— wP.oPs eeeAaI nee|||<br>PDM<br>0.1 0.02<br>t1<br>0.01 t2<br>nd SINGLE PULSE 0 ee ee<br>(THERMAL RESPONSE) Notes:<br>cee eee<br>1. Duty factor D = t   / t1 2<br>ee ee ll 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>ail tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br><— tp —<br>/ / |<br>|<br>IAS 7<br>**----- End of picture text -----**<br>


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80<br>ID<br>KP TOP 1.2A<br>2.1A<br>BOTTOM 2.9A<br>Nene<br>60 K K<br>40<br>NOSED<br>P ANNAL<br>20<br>| | RA<br>| | SSI<br>Pett<br>0 | PSA<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>o T iT? .3µ a F<br>QGS QGD +<br>D.U.T. -VDS<br>VG VGS<br>Mo, 6<br>3mA<br>IG ID<br>al Charge ot Current Sampling Resistors |<br>Fig 13a.   Basic Gate Charge Waveform Fig 13b.   Gate Charge Test Circuit<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>8 1 °<br>(0<br>•   +<br>Rg ( 4) •   dv/dt controlledDriver same type byas RgD.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>von | LINE A<br>Note: "P" in assembly line position ASSEMBLY e a l<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL cs<br>RECTIFIER IRFU120 DATE CODE<br>LOGO I¢aR Poi6a P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY i a l WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO os 56IRFU120919A78 DATE CODEYEAR 9 =  1999WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNAT ES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>$OOGGG 6) 4 ooo]4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>-<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm tbe<br>NOTES :<br>**----- End of picture text -----**<br>


1. OUTLINE CONFORMS TO EIA-481. 

Notes: o Repetitive rating;  pulse width limited by @ Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. 

@ Starting TJ = 25°C, L = 11mH © Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 2.9A. as Coss while VDS is rising from 0 to 80% VDSS ® ISD ≤ 2.9A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

When mounted on 1" square PCB (FR-4 or G-10 Material). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** _Data and specifications subject to change without notice. 12/04_ 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

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## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR220NTRLPBF/power-mosfet-n-channel-200-v-5-a-06-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr220ntrlpbf/mosfet-n-ch-200v-5a-to-252aa/dp/2725953)
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