# Power MOSFET, SMPS, N Channel, 150 V, 18 A, 0.125 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2803421/)

**URL**: https://novapart.co/products/IRFR18N15DTRPBF/power-mosfet-smps-n-channel-150-v-18-a-0125-ohm-to
**SKU**: IRFR18N15DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5610
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.125ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.125ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803421/)

## **SMPS MOSFET** 

## PD - 95061 IRFR18N15DPbF IRFU18N15DPbF 

HEXFET ® Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**150V**|**0.125**Ω|**18A**|



## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses 

- | Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

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D-Pak I-Pak<br>IRFR18N15DPbF IRFU18N15DPbF<br>**----- End of picture text -----**<br>


Fully Characterized Avalanche Voltage and Current 

## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 72 ~~—oe~~ PD @TC = 25°C ~~a~~ Power Dissipation 110 ~~ae~~ W ~~a~~ Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 30 V ~~a~~ dv/dt Peak Diode Recovery dv/dt 3.3 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~ee~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pf~~ 

## **Typical SMPS Topologies** 

Telecom 48V input  DC-DC Active Clamp Reset Forward Converter 

> Notes 0) hrough © are on page 10 www.irf.com 

1 12/9/04 

|~~a~~<br>~~SS~~|**Parameter**<br>~~a~~<br>~~SS~~|**Parameter**<br>~~a~~<br>~~SS~~|**Min.**<br><br>~~SS~~|**Typ. **<br>~~: —~~<br>~~SS~~|**Max. **<br>~~—~~<br>~~SS~~|**Max. **<br>~~—~~<br>~~SS~~|**Units**<br>~~—~~<br>~~SS~~|**Conditions**<br>~~—~~<br>~~SS~~|**Conditions**<br>~~—~~<br>~~SS~~|**Conditions**<br>~~—~~<br>~~SS~~|
|---|---|---|---|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~aes~~<br>~~SS~~|Drain-to-Source Breakdown Voltage<br>~~aes es~~<br>~~SS~~||150<br>~~es~~<br>~~SS~~|–––<br>~~: —~~<br>~~SS~~|–––<br>~~—~~<br>~~SS~~||V<br>~~—~~<br>~~SS~~|VGS= 0V, ID= 250µA<br>~~—~~<br>~~®~~<br>~~SS~~|||
|∆V(BR)DSS/∆TJ<br>~~aes~~<br>~~es~~<br>~~SS~~|JBreakdown Voltage Temp. Coefficient –––     0.17    –––     V/°C    Reference to 25°C, I<br>~~aes es~~<br>~~es~~<br>~~SS~~||–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~es~~<br>~~SS~~|–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~: —~~<br>~~SS~~|–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~—~~<br>~~SS~~||–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~—~~<br>~~SS~~|–––     0.17    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~—~~<br>~~®~~<br>~~@~~<br>~~SS~~|||
|RDS(on)<br>~~aes~~<br>~~es~~<br>~~SS~~|Static Drain-to-Source On-Resistance<br>~~aes es~~<br>~~es~~<br>~~SS~~||–––<br>~~es~~<br>~~SS~~|––– <br>~~: —~~<br>~~SS~~|0.125<br>~~—~~<br>~~SS~~||Ω<br>~~—~~<br>~~SS~~|VGS= 10V, ID= 11A<br>~~—~~<br>~~®~~<br>~~@~~<br>~~SS~~|||
|VGS(th)<br>~~a~~<br>~~es~~<br>~~es~~<br>~~SS~~|Gate Threshold Voltage<br>~~a~~<br>~~es~~<br>~~es~~<br>~~SS~~||3.0<br><br>~~es~~<br>~~SS~~|–––<br>~~: —~~<br>~~es~~<br>~~SS~~|5.5<br>~~—~~<br>~~es~~<br>~~SS~~||V<br>~~—~~<br>~~es~~<br>~~SS~~|VDS= VGS, ID= 250µA<br>~~—~~<br>~~@~~<br>~~SS~~|||
|IDSS<br>~~a~~<br>~~SS~~|Drain-to-Source Leakage Current<br>~~a~~<br>~~SS~~<br>~~|~~TT||–––<br><br>~~SS~~<br>~~|~~|–––<br>~~: —~~<br>~~SS~~<br>|25<br>~~—~~<br>~~SS~~<br>||µA<br>~~—~~<br>~~SS~~<br>TT|VDS= 150V, VGS= 0V<br>~~—~~<br>~~SS~~|||
||||–––<br><br>~~SS~~<br>~~|~~TT|–––<br>~~: —~~<br>~~SS~~<br>TT|250<br>~~—~~<br>~~SS~~<br>TT|||VDS= 120V, VGS= 0V, TJ= 150°C<br>~~—~~<br>~~SS~~|||
|IGSS<br>~~SS~~|Gate-to-Source Forward Leakage<br>~~SS~~<br>~~|~~<br>~~a~~||–––<br>~~SS~~<br>~~|~~<br>~~a~~|–––<br>~~SS~~<br><br>~~a~~|100<br>~~SS~~<br><br>~~a~~||nA<br>~~SS~~<br><br>~~a~~|VGS= 30V<br>~~SS~~|||
||Gate-to-Source Reverse Leakage<br>~~SS~~<br>~~a~~||–––<br>~~SS~~<br>~~a~~|–––<br>~~SS~~<br>~~a~~|-100<br>~~SS~~<br>~~a~~|||VGS= -30V<br>~~SS~~|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~SS~~<br>~~ee~~|||||||||||
|~~Ee~~|**Parameter**<br>ee<br>~~Ee~~||**Min.**<br>ee<br>~~ee~~<br>~~Ee~~|**Typ. **<br>ee<br>~~Ee~~|**Max.**<br>ee<br>~~Ee~~||**Units**<br>ee<br>~~Ee~~|**Conditions**|||
|gfs<br>~~Ee~~|Forward Transconductance<br>~~es~~<br>~~Ee~~||4.2<br>~~ee~~<br>~~es~~<br>~~Ee~~|–––<br>~~es~~<br>~~Ee~~|–––<br>~~es~~<br>~~Ee~~||S<br>~~es~~<br>~~Ee~~|VDS= 50V, ID= 11A|||
|Qg<br>~~Ee~~|Total Gate Charge<br>~~a~~<br>~~Ee~~||–––<br>~~a~~<br>~~Ee~~|28<br>~~a~~<br>~~Ee~~|43                 I<br>~~a~~<br>~~Ee~~||43                 I<br>nC<br>~~Ee~~<br>~~ae~~|43                 ID= 11A<br>VDS= 120V<br>VGS= 10V,<br>~~@~~<br>~~®~~|||
|Qgs<br>~~Ee~~|Gate-to-Source Charge<br>~~Ee~~<br>~~ee~~||–––<br>~~Ee~~<br>~~es~~|7.6<br>~~Ee~~|11<br>~~Ee~~||||||
|Qgd<br>~~Ee~~<br>~~a~~<br>~~es————~~|Gate-to-Drain("Miller")Charge<br>~~Ee~~<br>~~ee~~<br>~~a~~<br>~~————~~||–––<br>~~Ee~~<br>~~es~~|14<br>~~Ee~~<br>~~ae~~|21<br>~~Ee~~<br>~~ae~~||||||
|td(on)<br>~~Ee~~<br>~~a~~<br>~~es————~~|Turn-On Delay Time<br>~~Ee~~<br>~~ee~~<br>~~a~~<br>~~————~~||–––<br>~~Ee~~<br>~~es~~|8.8<br>~~Ee~~<br>~~ae~~|–––<br>~~Ee~~<br>~~ae~~||ns<br>~~Ee~~<br>~~ae~~|VDD= 75V<br>ID= 11A<br>RG= 6.8Ω<br>VGS= 10V<br>~~@~~<br>~~®~~|||
|tr<br>~~a~~<br>~~es————~~|Rise Time<br>~~a~~<br>~~————~~||–––|25<br>~~ae~~|–––<br>~~ae~~||||||
|td(off)<br>~~a~~<br>~~es————~~<br>~~+f~~|Turn-Off Delay Time<br>~~a~~<br>~~————~~<br>~~+f~~||–––<br>~~+f~~|15<br>~~ae~~<br>~~J~~|–––<br>~~ae~~<br>~~J~~||||||
|tf<br>~~————~~<br>~~+f~~|Fall Time<br>~~————~~<br>~~+f~~||–––<br>~~+f~~|9.8<br>~~ae~~<br>~~J~~|–––<br>~~ae~~<br>~~J~~||||||
|Ciss<br>~~————~~<br>~~+f~~<br>Ps|Input Capacitance<br>~~————~~<br>~~+f~~<br>~~ee~~||–––<br>~~+f~~<br>~~ee~~|900<br>~~ae~~<br>~~J~~<br>~~ee~~|–––<br>~~ae~~<br>~~J~~<br>~~ee~~||pF<br>~~ae~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~®~~|||
|Coss<br>~~+f~~<br>Ps<br>es|Output Capacitance<br>~~+f~~<br>~~ee~~||–––<br>~~+f~~<br>~~ee~~|190<br>~~J~~<br>~~ee~~|–––<br>~~J~~<br>~~ee~~||||||
|Crss<br>Ps<br>es<br>es|Reverse Transfer Capacitance<br>~~ee~~||–––<br>~~ee~~|49<br>~~ee~~|–––<br>~~ee~~||||||
|Coss<br>es<br>es<br>es|Output Capacitance||–––|1160|–––|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>es<br>es|Output Capacitance||–––|88|–––|||VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz|||
|Cosseff.<br>es|Effective Output Capacitance||–––|95|–––|||VGS= 0V, VDS= 0V to 120V<br>=|||
|**Avalanche Characteristics**<br>ee|||||||||||
|ee<br>Senn||**Parameter**<br><br>||||**Typ.**<br><br>O|||**Max.**<br>|**Units**<br>|
|EAS<br>ee©<br>Sennnn||Single Pulse Avalanche Energy<br>©<br>nn||||–––<br>©<br>O|||200<br>©|mJ<br>©|
|IAR<br>Sennnn||Avalanche Current<br>nn||||–––<br>O|||11|A|
|EAR<br>Sennnn<br>©||Repetitive Avalanche Energy<br>nn<br>©||||–––<br>O<br>©|||11<br>©|mJ|
|**Thermal Resistance**<br>O<br>Sennnn<br>©|||||||||||
|||**Parameter**||||**Typ.**|||**Max.**|**Units**|
|RθJC||Junction-to-Case||||–––|||1.4|°C/W|
|RθJA||Junction-to-Ambient (PCB mount)*||||–––|||50||
|RθJA||Junction-to-Ambient||||–––|||110||



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 100  100<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>9.0V 9.0V<br>8.0V 8.0V<br>7.5V 7.5V<br>7.0V 7.0V<br>BOTTOM 6.5V6.0V He BOTTOM 6.5V6.0V 1A<br> 10 wen) eonn ll eee 1?<br> 10<br>JAY en el<br> 1 6.0V<br>6.0V<br>7 AY SH Aaa i<br>ZA et a ael<br>0.1 PBAe e 20µs PULSE WIDTHT  = 25J °C  1 La 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 3.0<br>ID = 18A<br>————————— P TTTtET Tt<br>a 2.5 P EEP<br>ee ee eee y,<br>CO T  = 175  CJ ° WoLCA 2.0 PTSacee00en7ETT TTT TT er |<br> 10 bvAT T TTTTy 1.5 Socceraen46<br>| ttt PPP<br>7 EERE EEAArr<br>T  = 25  CJ ° 1.0<br>ea e Per<br>0.5<br>P E REE HH<br>V      = 50VDS<br>20µs PULSE WIDTH VGS = 10V<br> 1 0.0<br>6 Aiiiti| 7 8 9 10 | 11 12 -60 PEPE -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>anil Coss   = Cds + Cgd<br>1000 SS Ciss<br>Coss<br>100<br>a Se<br>FHT Crss tae Fl<br>10<br>1 10 100 1000<br>a<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 100<br>nr ee ae eee<br> 10<br>Hi | Yi7 | |<br>T  = 175  CJ °<br>Fo A R<br>T  = 25  CJ °<br>ne e e e<br> 1 2 e li e<br>—o r<br>ie<br>| as V      = 0 V GS<br>0.1 Yi P| tT<br>0.2 0.5 0.8 1.1 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID = 11A<br>VDS = 120V<br>16 P| ft VVDSDS == 75V 30V Lo<br>tf| | ae|<br>12<br>8 Pt tT | mw |<br>oA<br>4<br>FOR TEST CIRCUIT<br>0 ViA| rT | SEE FIGURE       13<br>0 10 20 30 40<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>|<br> 100<br>2 || |<br>10us<br>rari Seeriic Seen<br>a SA 100us LT TTT<br> 10 Patt SU SA<br>e e<br>anid  T TCJ = 25  C= 175  C° ° Secee ee Samet 1ms e<br>p  Single Pulse f s 10ms all<br> 1 di ss * "TU<br> 1  10  100  1000<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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20 Pi tt tt tet TT Yos Rp<br>16 PN EET EE Ves but<br>PTE NKEEE EEE Re - Vos<br>12<br>PTT PE NA sy<br>≤ 1<br>≤ 0.1 %<br>8<br>SRR nN Fig 10a.   Switching Time Test Circuit x<br>4 PT TT  ReeeNEETE EE VDS<br>90%<br>pit tte TEE Ty )<br>0 PET TET TT Ty yy |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS | |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>ae neanra S10 | es Oe GG] ee ST | EAT]<br>nee eee) ee ee eee<br> 1 ee<br>D = 0.50 ee<br>a eg a OG<br>0.20<br>0.10<br>PDM<br>0.1 p 0.05 = —$—$—— [oer] ee err<br>t1<br>0.02 SINGLE PULSE<br>omaor 0.01 | | | iii (THERMAL RESPONSE) TE Eya 1. Duty factor D =Notes: t   / t1 2 t2<br>Si e 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>f<br>20V<br>rt tp 0.01Ω<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>— tp<br>)<br>yal<br>IAS a n<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>So, QGS QGD<br>V | G<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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500<br>ID<br>Sennen<br>TOP 4.4A<br>9.0A<br>GnEnann<br>400 Nene BOTTOM 11A<br>300<br>S\N SSeS Seen<br>SnGeese<br>RN<br>200<br>SON<br>100<br>PRN<br>SSW<br>0<br>PSS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>lst .3µF<br>+<br>D.U.T. -VDS<br>VGS<br>“se<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>om | LINE A<br>Note: "P" in assembly line position ASSEMBLY e a t<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL —-<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Poigs P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY e a l WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999IN THE ASSEMBLY LINE "A" INTERNATIONALRECTIFIERLOGO |a 56IRFU120919A78 YEAR 9 =  1999DATE CODEWEEK 19<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>PART NUMBER<br>INTERNATIONAL cs<br>RECTIFIER IRFU120 DAT E CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeooooo\ | oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CC, Oo) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>ma =<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. @ Starting TJ = 25°C, L = 3.3mH © Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 11A. as Coss while VDS is rising from 0 to 80% VDSS ©) ISD ≤ 11A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR18N15DTRPBF/power-mosfet-smps-n-channel-150-v-18-a-0125-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfr18n15dtrpbf/mosfet-n-ch-150v-18a-to-252-3/dp/2803421)
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