# Power MOSFET, SMPS, N Channel, 200 V, 17 A, 0.165 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2803420/)

**URL**: https://novapart.co/products/IRFR15N20DTRPBF/power-mosfet-smps-n-channel-200-v-17-a-0165-ohm-to
**SKU**: IRFR15N20DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4850
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.165ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803420/)

## IRFR15N20DPbF **SMPS MOSFET** IRFU15N20DPbF HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses : Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

|**VDSS**|**VDSS**|**RDS(on) max**||**ID**|**ID**|
|---|---|---|---|---|---|
|**200V**||**0.165**Ω||**17A**||
|||||||
|||D-Pak<br>I-Pak||||
||IRFR15N20D<br>IRFU15N20D|||||



## **Absolute Maximum Ratings** 

|**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>17<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V<br>12<br>A<br>IDM<br>Pulsed Drain Current<br>68<br>PD@TC= 25°C<br>Power Dissipation<br>140<br>~~a=~~<br>~~aee~~<br>~~ee~~<br>~~a~~|
|---|
|PD@TA= 25°C<br>Power Dissipation*<br>3.0<br>W<br>~~eo~~|
|Linear DeratingFactor<br>0.96<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>± 30<br>V<br>dv/dt<br>Peak Diode Recoverydv/dt<br>8.3<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>300 (1.6mm from case )<br>°C<br>~~Os~~<br>~~eeee~~<br>~~es~~<br>~~——~~<br>~~ne~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.04||
|RθJA|Junction-to-Ambient (PCB mount)*|–––|50|°C/W|
|RθJA|Junction-to-Ambient|–––|110||



> Notes ® hrough 3) are on page 10 

www.irf.com 

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1/17/05 

|**Static @ TJ = 25°C (unless otherwise specified)**|
|---|
|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>200<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.26    –––     V/°C    Reference to 25°C, ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>––– 0.165<br>Ω<br>VGS= 10V, ID= 10A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.5<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>25<br>µA<br>VDS= 200V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 160V, VGS= 0V, TJ= 150°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 30V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>nA<br>VGS= -30V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>~~Ee~~<br>~~es~~<br>~~es es ee~~<br>~~®~~<br>~~es~~<br>~~@~~<br>~~es~~<br>~~es ee~~<br>~~SS~~<br>~~|~~<br>~~||~~<br>~~ee~~|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>4.0<br>–––<br>–––<br>S<br>VDS= 50V, ID= 10A<br>Qg<br>Total Gate Charge<br>–––      27      41                ID= 10A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>6.9<br>10<br>nC<br>VDS= 160V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>14<br>21<br>VGS= 10V,<br>td(on)<br>Turn-On Delay Time<br>–––<br>9.7<br>–––<br>VDD= 100V<br>tr<br>Rise Time<br>–––<br>32<br>–––<br>ID= 10A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>17<br>–––<br>RG= 6.8Ω<br>tf<br>Fall Time<br>–––<br>8.9<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>910<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>170<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>31<br>–––<br>pF<br>ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>1380<br>–––<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>67<br>–––<br>VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>150<br>–––<br>VGS= 0V, VDS= 0V to 160V<br>ns<br>ee<br>~~ee ee~~<br>~~es~~<br>~~ed~~<br>~~rene~~<br>~~ee~~<br>~~es ee~~<br>~~@~~<br>~~ee~~<br>es ee<br>~~Rs———— a?~~<br>~~;~~<br>~~=o~~<br>a<br>es<br>aes<br>Rs<br>a<br>esee<br>®|
|**Avalanche Characteristics**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>260<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>10<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>14<br>mJ<br>eses<br>Se<br>Snann<br>es©|
|**Diode Characteristics**|
|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**|
|S<br>D<br>G<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(BodyDiode)<br>–––<br>–––<br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.5<br>V<br>TJ= 25°C, IS= 10A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>130<br>200<br>ns<br>TJ= 25°C, IF= 10A<br>17<br>68<br>~~-~~<br>~~(Be~~<br>~~pf ed~~<br>~~es~~<br>~~es ee~~<br>~~®~~<br>~~tt~~|
|Qrr<br>Reverse RecoveryCharge<br>–––<br>610<br>920<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~i~~<br>~~_~~<br>~~®~~|



## **Diode Characteristics** 

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**----- Start of picture text -----**<br>
 100  100<br>VGS VGS<br>TOP 15V TOP 15V<br>12V 12V<br>10V ee ee 10V a ee<br>8.0V7.0V a lll 8.0V7.0V +} |}<br>6.0V 6.0V<br> 10 BOTTOM 5.5V5.0V TtWI APT —t 1 1 + TT BOTTOM 5.5V5.0V a wt =e<br> 10<br>A | | Se. ——— po t gat<br> 1 PAN ee el eAcee<br>5.0V<br>ee 2 ee ee = - -. 5 ee<br> 1<br>Ao y s<br>0.1 a0 f f<br>5.0V<br>e e P A[Ld<br>0.01 rPeA 20µs PULSE WIDTHT  = 25J °C 0.1 an il 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 3.5<br>ID = 17A<br>ee T  = 175  CJ ° —e) 3.0<br>P a C ee<br> 10<br>2.5<br>ne ee ee ee y,<br>PEELE 2.0 PEE EEEeee Yee<br> 1 | I7L | | | PT TT | | | PTT TT TTT yt yy<br>T  = 25  CJ ° 1.5<br>=P = EE RS====—==—— PteLA<br>ES ytbere<br>1.0<br>0.1<br>yi ji} ttt tt | tt COL E L dS<br>0.5<br>=== =======— at tt [Tt}]<br>V      = 50VDS<br>0.01 P PE o 20µs PULSE WIDTH 0.0 POCee e Tt VGS = 10V<br>5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20<br>10000 VGS   = 0V,       f = 1 MHZ ID = 10A<br>T om CCrss  iss    = C  = Cgd gs + Cgd,   Cds    SHORTED 16 | | VVDSDS == 160V 100V P||<br>Coss   = Cds + Cgd VDS = 40V<br>e T a ye<br>1000 Ciss<br>100 PPAR Coss UH 128 || A<br>P IN, AS E SH<br>Crss 4<br>HHSTE El py ti | | |<br>10 FOR TEST CIRCUIT<br>1 10 CE  Se 100 1000 0 AtV | | | | op SEE FIGURE       13<br>VDS, Drain-to-Source Voltage (V) 0 10 20 30 40<br>Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100 1000<br>OPERATION IN THIS AREA<br>° LIMITED BY R DS(on)<br>T  = 175  CJ<br>100<br>Sane eee eee ica<br> 10<br>a=aa 10 St Se Cl i 100µsec<br>SSS P ert MSCS rn<br>T  = 25  CJ °<br> 1 PIU TAL | PS<br>1msec<br>1<br>Tc = 25°C<br>Tj = 175°C 10msec<br>0.1 TEE V      = 0 V GS 0.1 PE Single Pulse HPS ]<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
20<br>TILILLLLILL vos<br>15 SSCP w f (ear<br>-<br>PAT vs<br>10 PPLE NEELINS vesPulse Width ≤ 1  us<br>≤ 0.1 %<br>PLE E N X E Duty Factor<br>Fig 10a.   Switching Time Test Circuit<br>5<br>VDS<br>Ft<br>90%<br>0 |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>P EPE PE VGS AY.TN|<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>ee<br>rT UT E T T<br> 1 A TE<br>D = 0.50<br>a ce<br>0.20<br>= 0.10 SSSSerr PDM<br>0.1 e ee<br>0.05 t1<br>e ee aati<br>0.02 SINGLE PULSE t2<br>0.01 (THERMAL RESPONSE)<br>Notes:<br>SIEanne2c ce Becee e<br>1. Duty factor D = t   / t1 2<br>ai n 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>i<br>20VVGS<br>an tp al 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
—— tp — V(BR)DSS<br>/ al<br>y |i<br>IAS<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>—— — —<br>QGS QGD<br>V Mo, G<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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600<br>ID<br>Pot<br>TOP 4.2A<br>500 7.2A<br>BOTTOM 10A<br>eNae e<br>400 P\EPIN |TETE Tt<br>300 NOIN<br>BNENEE| Et EEE<br>200 BNE<br>100 P|PTT [RWNAN,]  ARKAANNE EEEEE[TT<br>PEERS a<br>0 PF tit tTer<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>oe D.U.T. -VDS<br>VGS<br>(3<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>om | LINE A<br>Note: "P" in assembly line position ASSEMBLY i a t<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL gS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Ps i ss P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY at WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>ay<br>PART NUMBER<br>INTERNATIONAL cs<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>$oOGOG Go) | eeoo/|<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>- -<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN a<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. 

@© Starting TJ = 25°C, L = 4.9mH Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 10A. as Coss while VDS is rising from 0 to 80% VDSS 

- ® ISD ≤ 10A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

When mounted on 1" square PCB (FR-4 or G-10 Material). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/05 

www.irf.com 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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