# Power MOSFET, N Channel, 150 V, 14 A, 0.18 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725951/)

**URL**: https://novapart.co/products/IRFR13N15DTRPBF/power-mosfet-n-channel-150-v-14-a-018-ohm-to-252aa
**SKU**: IRFR13N15DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5640
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 86W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 86W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.18ohm |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 0.18ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725951/)

## **SMPS MOSFET** 

## PD - 95549 IRFR13N15DPbF IRFU13N15DPbF 

HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**150V**|**0.18**Ω|**14A**|



## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

> | Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

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## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~ee~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.8 A IDM Pulsed Drain Current 56 ~~—————or~~ PD @TC = 25°C ~~a~~ Power Dissipation ~~ae~~ 86 W ~~SS~~ Linear Derating Factor 0.57 W/°C VGS Gate-to-Source Voltage ± 30 V ~~a~~ dv/dt Peak Diode Recovery dv/dt 3.8 V/ns TJ Operating Junction and -55  to + 175 ~~a~~ TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 

## **Typical SMPS Topologies** 

Telecom 48V input  Active Clamp  Forward Converter 

Notes hrough are on page 10 

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|~~SS~~|**Parameter**<br>~~SS~~|**Parameter**<br>~~SS~~|**Min.**<br>~~SS~~|**Typ. **<br>~~:~~<br>~~SS~~|**Max.**<br>~~: —as~~<br>~~SS~~|**Max.**<br>~~: —as~~<br>~~SS~~|**Units**<br>~~—as~~<br>~~SS~~|**Conditions**<br>~~—as~~<br>~~SS~~|**Conditions**<br>~~—as~~<br>~~SS~~|**Conditions**<br>~~—as~~<br>~~SS~~|
|---|---|---|---|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ss~~<br>~~es~~<br>~~SS~~|Drain-to-Source Breakdown Voltage<br>~~ss~~<br>~~es~~<br>~~SS~~||150<br>~~ss~~<br>~~SS~~|–––<br>~~:~~<br>~~ss~~<br>~~SS~~|–––<br>~~: —as~~<br>~~ss~~<br>~~SS~~||V<br>~~—as~~<br>~~ss~~<br>~~SS~~|VGS= 0V, ID= 250µA<br>~~—as~~<br>~~®~~<br>~~SS~~|||
|∆V(BR)DSS/∆TJ<br>~~es~~<br>~~es~~<br>~~SS~~|JBreakdown Voltage Temp. Coefficient –––     0.17    –––     V/°C    Reference to 25°C, I<br>~~es~~<br>~~es~~<br>~~SS~~||–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~SS~~|–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~:~~<br>~~SS~~|–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~: —as~~<br>~~SS~~||–––     0.17    –––     V/°C    Reference to 25°C, I<br>~~—as~~<br>~~SS~~|–––     0.17    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~—as~~<br>~~®~~<br>~~@~~<br>~~SS~~|||
|RDS(on)<br>~~es~~<br>~~es~~<br>~~SS~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~<br>~~SS~~||–––<br>~~SS~~|–––<br>~~:~~<br>~~SS~~|0.18<br>~~: —as~~<br>~~SS~~||Ω<br>~~—as~~<br>~~SS~~|VGS= 10V, ID= 8.3A<br>~~—as~~<br>~~®~~<br>~~@~~<br>~~SS~~|||
|VGS(th)<br>~~es~~<br>~~es~~<br>~~SS~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~SS~~||3.0<br>~~es~~<br>~~SS~~|–––<br>~~:~~<br>~~es~~<br>~~SS~~|5.5<br>~~: —as~~<br>~~es~~<br>~~SS~~||V<br>~~—as~~<br>~~es~~<br>~~SS~~|VDS= VGS, ID= 250µA<br>~~—as~~<br>~~@~~<br>~~SS~~|||
|IDSS<br>~~SS~~|Drain-to-Source Leakage Current<br>~~SS~~<br>~~|~~<br>|||–––<br>~~SS~~<br>~~||~~|–––<br>~~:~~<br>~~SS~~<br>~~||~~|25<br>~~: —as~~<br>~~SS~~<br>~~|~~||µA<br>~~—as~~<br>~~SS~~<br>~~|~~|VDS= 150V, VGS= 0V<br>~~—as~~<br>~~SS~~|||
||||–––<br>~~SS~~<br>~~||~~<br>||–––<br>~~:~~<br>~~SS~~<br>~~||~~|250<br>~~: —as~~<br>~~SS~~<br>~~|~~|||VDS= 120V, VGS= 0V, TJ= 150°C<br>~~—as~~<br>~~SS~~|||
|IGSS<br>~~SS~~|Gate-to-Source Forward Leakage<br>~~SS~~<br>~~|~~<br>|||–––<br>~~SS~~<br>~~| |~~<br>||–––<br>~~SS~~<br>~~||~~|100<br>~~SS~~<br>~~|~~||nA<br>~~SS~~<br>~~|~~|VGS= 30V<br>~~SS~~|||
||Gate-to-Source Reverse Leakage<br>~~SS~~<br>|||–––<br>~~SS~~<br>||–––<br>~~SS~~|-100<br>~~SS~~|||VGS= -30V<br>~~SS~~|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~ee~~<br>~~es~~|||||||||||
|~~a~~|**Parameter**<br>es<br>~~es~~||**Min. **<br>es<br>~~ee~~<br>~~es~~<br>~~es~~|**Typ. **<br>es<br>~~es~~<br>~~es~~|**Max.**<br>es<br>~~es~~||**Units**<br>es|**Conditions**|||
|gfs<br>~~a~~|Forward Transconductance<br>~~es~~<br>~~es~~||5.0<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~||S<br>~~es~~|VDS= 50V, ID= 8.3A|||
|Qg<br>~~a~~|Total Gate Charge<br>~~es~~<br>~~**e**ree~~||–––     19      29                I<br>~~es~~<br>~~es~~<br>~~ree~~|–––     19      29                I<br>~~es~~<br>~~ree~~|–––     19      29                I<br>~~es~~<br>~~ree~~||–––     19      29                I<br>nC<br>~~ree~~|–––     19      29                ID= 8.3A<br>VDS= 120V<br>VGS= 10V,<br>~~@~~<br>~~;~~|||
|Qgs<br>~~a~~|Gate-to-Source Charge<br>~~es~~<br>~~**e**ree~~<br>~~e~~||–––<br>~~es~~<br>~~ree~~<br>~~ee~~|5.5<br>~~es~~<br>~~ree~~|8.2<br>~~es~~<br>~~ree~~||||||
|Qgd<br>~~a~~<br>~~——————~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~**e**ree~~<br>~~e~~<br>~~——————~~||–––<br>~~es~~<br>~~ree~~<br>~~ee~~<br>~~——————~~|9.4<br>~~es~~<br>~~ree~~|14<br>~~es~~<br>~~ree~~||||||
|td(on)<br>~~a~~<br>~~es——————~~|Turn-On Delay Time<br>~~es~~<br>~~e~~<br>~~ee~~<br>~~——————~~||–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~——————~~|8.0<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~||ns<br>=S——eee|VDD= 75V<br>ID= 8.3A<br>RG= 11Ω<br>VGS= 10V<br>~~@~~<br>~~;~~|||
|tr<br>~~es——————~~|Rise Time<br>~~ee~~<br>~~——————~~||–––<br>~~ee~~<br>~~——————~~|26<br>~~ee~~|–––<br>~~ee~~||||||
|td(off)<br>~~es——————~~<br>=S——eee|Turn-Off Delay Time<br>~~ee~~<br>~~——————~~<br>=S——eee||–––<br>~~ee~~<br>~~——————~~<br>=S——eee|12<br>~~ee~~<br>=S——eee|–––<br>~~ee~~<br>=S——eee||||||
|tf<br>~~——————~~<br>=S——eee|Fall Time<br>~~——————~~<br>=S——eee||–––<br>~~——————~~<br>=S——eee|11<br>=S——eee|–––<br>=S——eee||||||
|Ciss<br>~~——————~~<br>=S——eee<br>es|Input Capacitance<br>~~——————~~<br>=S——eee<br>~~ee~~||–––<br>~~——————~~<br>=S——eee<br>~~ee~~|620<br>=S——eee<br>~~ee~~|–––<br>=S——eee<br>~~ee~~||pF<br>=S——eee|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~;~~|||
|Coss<br>=S——eee<br>es<br>Ps|Output Capacitance<br>=S——eee<br>~~ee~~||–––<br>=S——eee<br>~~ee~~|130<br>=S——eee<br>~~ee~~|–––<br>=S——eee<br>~~ee~~||||||
|Crss<br>=S——eee<br>es<br>Ps<br>Ps|Reverse Transfer Capacitance<br>=S——eee<br>~~ee~~||–––<br>=S——eee<br>~~ee~~|38<br>=S——eee<br>~~ee~~|–––<br>=S——eee<br>~~ee~~||||||
|Coss<br>=S——eee<br>Ps<br>Ps<br>es|Output Capacitance<br>=S——eee||–––<br>=S——eee|780<br>=S——eee|–––<br>=S——eee|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>=S——eee<br>Ps<br>es<br>Ps|Output Capacitance<br>=S——eee||–––<br>=S——eee|62<br>=S——eee|–––<br>=S——eee|||VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>=S——eee<br>es<br>Ps|Effective Output Capacitance<br>=S——eee||–––<br>=S——eee|110<br>=S——eee|–––<br>=S——eee|||VGS= 0V, VDS= 0V to 120V<br>®|||
|**Avalanche Characteristics**<br>=S——eee<br>Ps<br>®<br>rseG|||||||||||
|rs||**Parameter**<br>eG||||**Typ.**<br>eG|||**Max.**<br>eG|**Units**<br>eG|
|EAS<br>rs<br>eG<br>Se||Single Pulse Avalanche Energy<br>eG<br>eG<br>nnn||||–––<br>eG<br>eG<br>nnn|||130<br>eG<br>eG|mJ<br>eG<br>eG|
|IAR<br>Se||Avalanche Current<br>nnn||||–––<br>nnn|||8.3|A|
|EAR<br>Se<br>©||Repetitive Avalanche Energy<br>nnn<br>©||||–––<br>nnn<br>©|||8.6<br>©|mJ|
|**Thermal Resistance**<br>Se<br>nnn|||||||||||
|||**Parameter**||||**Typ.**|||**Max.**|**Units**|
|RθJC||Junction-to-Case||||–––|||1.75|°C/W|
|RθJA||Junction-to-Ambient (PCB mount)*||||–––|||50||
|RθJA||Junction-to-Ambient||||–––|||110||



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 100<br>VGS<br>TOP 15V<br>12V<br>10V<br>8.0V<br>7.0V i et it<br>6.0V ll<br> 10 5.5V lL [AA]<br>BOTTOM 5.0V<br>rn Se” “dilemmath<br> 1<br>WA)eeZ| |<br>OSS<br>5.0V<br>0.1<br>Pe Ht HH<br>20µs PULSE WIDTH<br>PM T  = 25J °C<br>0.01 Ci<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100<br>Se e neee e ee==<br>ee<br>ee ° eee aa<br>T  = 175  CJ<br> 10 Po ber<br>LATA +/+ }+ f+ { ft<br>T  = 25  CJ °<br>7 EEE<br> 1 fF<br>2<br>i7/{ | [| [— | [ [| fT [| JT T[ 4Y<br>V      = 50VDS<br>P r 20µs PULSE WIDTH<br>0.1 PET Ty<br>5 6 7 8 9 10 11<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 100<br>VGS<br>TOP 15V<br>12V<br>10V<br>8.0V<br>7.0V ch<br>6.0V HT mr<br>5.5V —<br>BOTTOM 5.0V<br> 10 SemenSSeecarte ect<br>many CameZe<br>y”. 40% 5.0V (<br> 1<br>V s/n |<br>20µs PULSE WIDTHT  = 175J °C<br>0.1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 2.** Typical Output Characteristics 

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3.0<br>ID = 14A<br>2.5 PERE EEE<br>Pt tt y_ ttyTTY<br>2.0 Y |<br>1.5<br>WA<br>HEE EEZ|<br>1.0 PE Pao EE EET<br>0.5 Trae| tTPeele<br>0.0 P t tT tttETTTTttTTtty E VGS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 20<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ ID = 8.3A<br>Ciss    = Cgs + Cgd,   Cds    SHORTEDiss    = Cgs + Cgd,   Cds    SHORTED   = Cgs + Cgd,   Cds    SHORTEDgs + Cgd,   Cds    SHORTED+ Cgd,   Cds    SHORTEDgd,   Cds    SHORTED,   Cds    SHORTEDds    SHORTED   SHORTED VDS = 120V<br>CCrss  oss    = C = Cgd ds + CgdCrss  oss    = C = Cgd ds + Cgdrss  oss    = C = Cgd ds + Cgdoss    = C = Cgd ds + Cgd  = C = Cgd ds + Cgd = Cgd ds + Cgdgd ds + Cgdds + Cgd+ Cgdgd 16 VVDSDS == 75V 30V<br>1000 t | il | | FEET ypey<br>Ciss<br>12<br>ee eel<br>PINE EE EE AA<br>Coss<br>100 8<br>a S E UT SERRE 2EEER<br>Crss<br>4<br>FER E ck PAT TTT<br>10 FOR TEST CIRCUIT<br>1 SG 10 ma 100 1000 FAGGEEE E SEE FIGURE       13<br>0<br>VDS, Drain-to-Source Voltage (V) 0 5 10 15 20 25 30<br>Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>T  = 175  CJ °  100<br>aa a SSD) AN<br> 10<br>PP| ff | ye  10 seeae Seer a a 10us100us t eeti<br>T  = 25  CJ °<br> 1 1ms<br>| | f| fT Es to<br>SS SS  1 T a 10ms<br> T TCJ = 25  C= 175  C° °<br>0.10.2 SA) 0.4 0.6 0.8 1.0 V      = 0 V GS1.2 1.4 0.1  1 L_  Single Pulse E  10  100 H  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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10000<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTEDiss    = Cgs + Cgd,   Cds    SHORTED   = Cgs + Cgd,   Cds    SHORTEDgs + Cgd,   Cds    SHORTED+ Cgd,   Cds    SHORTEDgd,   Cds    SHORTED,   Cds    SHORTEDds    SHORTED   SHORTED<br>CCrss  oss    = C = Cgd ds + CgdCrss  oss    = C = Cgd ds + Cgdrss  oss    = C = Cgd ds + Cgdoss    = C = Cgd ds + Cgd  = C = Cgd ds + Cgd = Cgd ds + Cgdgd ds + Cgdds + Cgd+ Cgdgd<br>1000 t | il | |<br>Ciss<br>ee eel<br>PINE EE EE<br>Coss<br>100<br>a S E UT<br>Crss<br>FER E ck<br>10<br>1 10 100 1000<br>SG ma<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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14<br>PNT Pt Ett Vos Rp :<br>12 PIES EE Ves<br>PPT NET TT TT D.UT.<br>10 PTT TAT EP Re | - y<br>aa eNeeee pp<br>8 PEP eT TP PNET Ves<br>aN rice with ≤ 1  ps<br>≤ 0.1 %<br>6 SeePT TT TyeeeeNeeAT Duty Factor :<br>4 PT ee tT Pt TN Fig 10a.   Switching Time Test Circuit<br>PT TT Tey [eee]<br>VDS<br>2 PE nN<br>90%<br>PT ee PtrT<br>0 Pt TTTtT ET eyTT eyTT eeTT yy /|<br>25 50 75 100 125 150 175<br>° |<br>T   , Case TemperatureC (  C)<br>|<br>10%<br>VGS |\< al >|| <p ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>poeeeeee<br> 1 e D = 0.50 e ee a<br>= a 0.20 rr<br>0.10<br>0.05 PDM<br>S S — ene eelll<br>0.1 eso<br>0.02 SINGLE PULSE t1<br>0.01 (THERMAL RESPONSE)<br>a rt aa a a a a ee t2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>PETE 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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240<br>15V ID<br>NEE<br>TOP 3.4A<br>200 5.9A<br>L DRIVER NENG E BOTTOM 8.3A<br>VDS<br>160 Pike TE<br>R G D.U.T + NETIX| EE<br>- [V][DD]<br>; IAS A 120 GNENER ESE<br>20V<br>th tp 0.01Ω 80 NOREPE AN KOLOA EE<br> Unclamped Inductive Test Circuit<br>PT NAAR<br>40 PE |ARAN<br>PotTTRSAA<br>V(BR)DSS(BR)DSS 0 Eee eee... ~o<br>_ tp 25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS(BR)DSS<br>_ tp<br>/ / |<br>IAS |<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>co<br>QGS QGD<br>VG<br>fo Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>IT 3 .3µ a F<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>oe Current Sampling Resistors |<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>oe | LINE A<br>Note: "P" in assembly line position ASSEMBLY dU<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL CN<br>RECTIFIER IRFU120 DATE CODE<br>LOGO IGaR Pais P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY e a t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>**----- End of picture text -----**<br>


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PART NUMBER<br>INTERNATIONAL GN<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>OOOOH Go) | oooof4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE OO)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a}<br>**----- End of picture text -----**<br>


NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. 

max. junction temperature. 

@© Starting TJ = 25°C, L = 3.8mH Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 8.3A.G = 25Ω, IAS = 8.3A.= 25Ω, IAS = 8.3A.Ω, IAS = 8.3A., IAS = 8.3A.AS = 8.3A.= 8.3A. as Coss while VDS is rising from 0 to 80% VDSS 

RG = 25Ω, IAS = 8.3A.G = 25Ω, IAS = 8.3A.= 25Ω, IAS = 8.3A.Ω, IAS = 8.3A., IAS = 8.3A.AS = 8.3A.= 8.3A. 

- ® ISD ≤ 8.3A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

When mounted on 1" square PCB (FR-4 or G-10 Material). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR13N15DTRPBF/power-mosfet-n-channel-150-v-14-a-018-ohm-to-252aa)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfr13n15dtrpbf/mosfet-n-ch-150v-14a-to-252aa/dp/2725951)
---

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