# Power MOSFET, N Channel, 60 V, 79 A, 8400 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725948/)

**URL**: https://novapart.co/products/IRFR1018ETRPBF/power-mosfet-n-channel-60-v-79-a-8400-ohm-to-252aa
**SKU**: IRFR1018ETRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4330
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 79A |
| Drain Source On State Resistance | 8400µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725948/)

## IRFR1018EPbF IRFU1018EPbF 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS 

Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

## **Benefits** 

HEXFET ® Power MOSFET 

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D ee VDSS 60V<br>RDS(on)   typ. 7.1m<br>              max. 8.4m<br>a.<br>G<br>I 79A<br>ee D (Silicon Limited) on<br>S I 56A<br>ee D (Package Limited) ee<br>**----- End of picture text -----**<br>


Improved  Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability 

D-Pak I-Pak IRFR1018EPbF IRFU1018EPbF 

|**G**<br>**D**<br>**S**||
|---|---|
|Gate<br>Drain<br>Source||
|**Absolute Maximum Ratings**||
|**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>A<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>56<br>110<br>**Max.**<br>79<br>56<br>315<br>~~CC~~<br>~~Pf~~<br>~~Oe~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~>en~~<br>~~a GO~~||
|Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>21<br>± 20<br>0.76<br>~~a GO~~<br>~~asGO~~<br>~~Pe~~||
|TJ<br>Operating Junction and<br>°C<br>-55  to + 175||
|TSTG<br>Storage Temperature Range||
|Soldering Temperature, for 10 seconds<br>300||
|(1.6mm from case)||
|**Avalanche Characteristics**||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>11<br>88<br>47<br>~~Pf~~<br>~~Oe~~<br>~~PO~~<br>~~Oe~~<br>~~a GO~~||
|**Thermal Resistance**||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>1.32<br>RθJA<br>Junction-to-Ambient(PCB Mount)<br>–––<br>50<br>RθJA<br>Junction-to-Ambient<br>–––<br>110<br>°C/W<br>~~esQO~~<br>~~es~~<br>~~I~~<br>~~©~~<br>~~S(O~~<br>~~Pe~~<br>~~a©~~||



> Notes ~~®~~ through  are on page 2 ©) www.irf.com 

1 

4/21/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.073<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>7.1<br>8.4<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Conditions**<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 5mA<br>VGS= 10V,ID= 47A<br>VDS= VGS,ID= 100μA<br>VDS= 60V,VGS= 0V<br>VDS= 48V,VGS= 0V,TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~a~~<br>~~rnPD QOD QOD~~<br>~~a rs~~<br>~~GD QOD QODGO~~<br>~~ee~~<br>~~ee~~<br>~~a en~~<br>~~QDQD QODQO~~<br>~~a~~<br>~~—~~<br>~~| tT~~<br>~~_——————————_——eE~~<br>~~a~~<br>~~Pp~~|
|---|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>110<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>46<br>69<br>nC<br>Qgs<br>Gate-to-Source Charge<br>–––<br>10<br>–––<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>12<br>–––<br>Qsync<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>34<br>–––<br>RG(int)<br>Internal Gate Resistance<br>–––<br>0.73<br>–––<br>Ω<br>td(on)<br>Turn-On DelayTime<br>–––<br>13<br>–––<br>ns<br>VGS= 10V<br>VDD= 39V<br>ID= 47A,VDS=0V,VGS= 10V<br>VDS= 30V<br>**Conditions**<br>VDS= 50V,ID= 47A<br>ID= 47A<br>~~a~~<br>~~rnPD QOD QOD~~<br>~~a en~~<br>~~QDQDQODQO~~<br>~~es~~~~**ee**~~<br>~~esa~~<br>~~i~~<br>~~©~~<br>~~a~~<br>~~a~~<br>~~rn GD RD QO~~<br>~~QODQO~~<br>~~a~~<br>~~i~~|
|tr<br>Rise Time<br>–––<br>35<br>–––<br>ID= 47A<br>~~a~~<br>~~i~~|
|td(off)<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>tf<br>Fall Time<br>–––<br>46<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>2290<br>–––<br>RG= 10Ω<br>VGS= 10V<br>VGS= 0V<br>~~a~~<br>~~i~~<br>~~a~~<br>®<br>~~a~~<br>~~i~~|
|Coss<br>Output Capacitance<br>–––<br>270<br>–––<br>VDS= 50V<br>~~a~~<br>~~i~~|
|Crss<br>Reverse Transfer Capacitance<br>–––<br>130<br>–––<br>pF<br>Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>390<br>–––<br>Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>630<br>–––<br>ƒ= 1.0MHz<br>VGS= 0V,VDS= 0V to 60V<br>VGS= 0V,VDS= 0V to 60V<br>~~a i~~<br>~~ee>~~<br>~~eeen~~|
|**Diode Characteristics**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|S<br>D<br>G<br>IS<br>Continuous Source Current<br>–––<br>–––<br>79<br>A<br>(Body Diode)<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>315<br>(Body Diode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse Recovery Time<br>–––<br>26<br>39<br>ns<br>TJ= 25°C<br>VR= 51V,<br>–––<br>31<br>47<br>TJ= 125°C<br>IF= 47A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>24<br>36<br>nC<br>TJ= 25°C<br>di/dt = 100A/μs<br>–––<br>35<br>53<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>1.8<br>–––<br>A<br>TJ= 25°C<br>TJ= 25°C,IS= 47A,VGS= 0V<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>showing  the<br>~~Peft~~<br>~~a~~<br>~~SS~~<br>~~eea~~<br>~~Pt~~<br>~~ee~~<br>~~ee eee~~<br>°<br>~~Pt~~<br>~~a~~|
|ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~a~~|



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

Repetitive rating;  pulse width limited by max. junction temperature. 

Limited by TJmax, starting TJ = 25°C, L = 0.08mH 

RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for use above this value. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Coss eff. (TR) is a fixed capacitance that gives the same charging time 

as Coss while VDS is rising from 0 to 80% VDSS. 

Coss eff. (ER) is a fixed capacitance that gives the same energy as 

Coss while VDS is rising from 0 to 80% VDSS. 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. 

ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

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1000<br>VGS<br>S oon TOP           15V<br>10V<br>8.0V<br>6.0V<br>erie cs 5.5V<br>5.0V<br>100 4.8V<br>BOTTOM 4.5V<br>10 4.5V<br>Z an =a<br>eS PE ee oe<br>≤60μs PULSE WIDTH<br>Tj = 25°C<br>1 PETA bss [LILI<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100 Te<br>TJ = 175°C Se | | | 4<br>Ser aeee<br>10 Ee7Geee<br>ee ee) re ee ee ee<br>TJ = 25°C<br>1 [fi<br>a ee VDS  ee = 25V<br>vFceaae ≤60μs PULSE WIDTH<br>0.1 A<br>2 3 4 5 6 7 8 9<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>4000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>3000 C oss   = C ds  + C gd<br>|<br>Ciss<br>nih i l<br>2000 Tu<br>N<br>1000 Coss<br>Crss<br>e e eel e<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V Ser<br>10V<br>8.0V<br>6.0V<br>5.5V Seehiria e eeriimest i tl<br>5.0V<br>100 4.8V<br>BOTTOM 4.5V<br>4.5V<br>10<br>PA N<br>PP eeteoe<br>≤60μs PULSE WIDTH<br>Tj = 175°C<br>1 Ero CLEt EE Luh<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 47A<br>VGS = 10V<br>«6<br>2.0<br>TTT 1<br>1.5 PEELEHLTH<br>1.0<br>4<br>Lette<br>ATL LLELLLE<br>0.5<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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16<br>ID= 47A<br>VDS= 48V<br>12 pT VDS= 30V<br>VDS= 12V<br>Wr<br>| | A<br>8 Wj<br>4<br>nedYALA<br>0<br>0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 SS<br>=<br>100<br>e T = 175°C a<br>J<br>O K<br>10<br>TJ = 25°C<br>S e<br>pf a<br>1 ee A ee ee ee<br>VGS = 0V<br>es<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>80<br>LIMITED BY PACKAGE<br>60<br>40<br>“ALIN<br>20<br>BRREKE<br>0 PEEL .<br> LIA<br>25 50 75 100 125 150 175<br> TC,  Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Case Temperature<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 11.** Typical COSS Stored Energy 

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10000 ——E<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>=: Ter<br>1000 SSSaa<br>Set raat<br>100 1m s ec<br>1 00 μsec<br>10<br>Ea LIMITED BY PACKAGE All m cs i<br>nmennen S e rre<br>EH ” 10 ms ec<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse DC<br>0.1 |<br>0.1 1 10 100<br>VDS,  Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>80<br>Id = 5mA<br>75<br>70 VY<br>TTT<br>65<br>va<br>DATTA<br>60<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>400<br>350 Ffot                  ITOP         5.3AD<br>               11A<br>Nae<br>300 BOTTOM   47A<br>250 NE |<br>PK]<br>200150 |<br>NIN ft fl<br>100 NINE<br>50<br>SES<br>0 | | |CSS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent 

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10<br>PF LAA PER PEA PEEP PT<br>1 PETEEP<br>e D = 0.50 ee<br>0.20 Seer elLLL|<br>0.1 0.10 R1 R1 R2 R2 R3 R3 R4 R4 Ri (°C/W) τι (sec)<br>0.050.02 τJ τJτ1 τ1 τ2 τ2 τ3τ3 τ4τ4 τCτ 0.0267410.6066850.28078 0.0000070.0008430.000091<br>0.01<br>0.01 Ci=  Ci τi/Ri i/Ri 0.406128 0.005884<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>|| pulsewidth, tav, assuming  et ΔTj = 150°C and<br>COE<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 pT PS RAPS UTE ANTETT THl<br>SSSR 0.05 TI<br>0.10<br>T i sl]<br>1 a Pn esEIeeeee<br>Allowed avalanche Current vs avalanche<br>= ETHIE BSS TI<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>FP SSS<br>PL ee EE<br>0.1 || EET EE EET EET EET EE<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>100<br>Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM   10% Duty Cycle<br>1. Avalanche failures assumption:<br>80 a I D  = 47A Purely a thermal phenomenon and failure occurs at a temperature far in<br>excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>60 NON EE Et EL 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>HI NINIEEEE<br>during avalanche).<br>40 PLENIATE EE E 6. Iav = Allowable avalanche current.<br>7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 14, 15).<br>TINA<br>20 tav = Average time in avalanche.<br>PL NONS ET D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>0 Pit tt | tLNENG [ARAN]<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav =av == 2 A T/ [1.3·BV·Zth]th]]<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav =av == 2** A **T/ [1.3·BV·Zth]th]] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.5 14<br>4.0 IIID  D D = 250μA== 1.0A 1.0mA 12 IF = 32A V R  = 51V<br>3.5 I D  = 100μA 10 T TJ = 25°CJ = 125°C<br>3.0 EERE = 8 | Pe<br>TASS PEN mwa<br>2.5 6<br>|] ISSN P| ee<br>2.0 iit TUSNNDN 4 ean<br>1.5 2<br>1.0 HAS BEE<br>0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>0 200 400 600 800 1000<br>TJ , Temperature ( °C )<br>diF /dt (A/μs)<br>Fig. 17 - Typical Recovery Current vs. di;/dt<br>Fig 16.   Threshold Voltage vs. Temperature<br>14 320<br>IF = 47A IF = 32A<br>12 V R  = 51V ee 280 VR = 51V Pt ty<br>TJ = 25°C 240 T J  = 25°C<br>10 T J = 125°C | | et TJ = 125°C ay<br>200<br>8<br>at {eS<br>160<br>6<br>ee 120 i<br>an SAS<br>4<br>80<br>a fe<br>2 ae 40 ||<br>0 0<br>po} |tT || PoeTTtT<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/μs) diF /dt (A/μs)<br>IRR (A)<br>IRR (A) QRR (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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320<br>IF = 47A<br>280<br>| |<br>VR = 51V<br>240 T J  = 25°C is<br>TJ = 125°C<br>ee,<br>200<br>160<br>| A<br>120<br>pot ft AZ |<br>ae<br>80<br>40<br>pap ||<br>oT<br>0<br>tT |<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (A)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {+$—_—_— P.W. Period —_— — D = — Period<br>) [©)]    •  Circuit Layout Considerations lt V | GS « =10V<br>| | -  •   LowGround StrayPlane Inductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [L] Current Transformer - ® + Current r Current di/dt AN<br>00 ® D.U.T. VDS Waveform Diode Recovery =<br>dv/dt<br>© . ‘ VDD<br>ma<br>•   Re-Applied<br>Re ) •   dv/dtDriver controlledsame type byas RgD.U.T. Vpp** + Voltage Body Diode  Forward Drop<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>(7) Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>* Use P-Channel Driver for P-Channel Measurements *** \15 = 5V for Logic Level Devices<br>** Reverse Polarity for P-Channel<br>Fig 21.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>V(BR)DSS<br>15V < tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω IAS<br>Fig 22a.   Unclamped Inductive Test Circuit Fig 22b.   Unclamped Inductive Waveforms<br>V<br>Vos OTNRp DS<br>90%<br>v D.UT. | |<br>-<br>Vop 10% |<br>V<br>GS<br>Pulse Width ≤ 1  us ‘ “4# — _ P o<br>Duty Factor ≤ 0.1 % td(on) tr td(off) tf<br>Fig 23a.   Switching Time Test Circuit Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K S Vgs(th)<br>S k: Qgodr Qgd Qgs2 . Qgs1<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

**Fig 24a.** Gate Charge Test Circuit 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE inal<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL<br>OR RECTIFIER N IRFR120 - P =  DESIGNATES LEAD-FREEDATE CODE<br>LOGO IER Pri6a PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT QUALIFIED TO THE<br>LOT CODE CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLYLOT CODE 5678 RECTIFIERLOGO XQ I@R IRFU120119A Yo - DATE CODEYEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL . LO<br>RECTIFIER N\ IRFU120 a DATE CODE<br>LOGO TOR Pris P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) 8.1 ( .318 )<br>FEED DIRECTION FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>/\/\<br>  13 INCH<br>i~ _ ZL<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 4/09 

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## **IMPORTANT NOTICE** 

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With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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---

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