# Power MOSFET, N Channel, 100 V, 170 A, 0.009 ohm, TO-274AA, Through Hole

![Product image](https://novapart.co/image/farnell:3155142/)

**URL**: https://novapart.co/products/IRFPS3810PBF/power-mosfet-n-channel-100-v-170-a-0009-ohm-to
**SKU**: IRFPS3810PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.9000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 441W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 441W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.009ohm |
| Transistor Case Style | TO-274AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 170A |
| Drain Source On State Resistance | 0.009ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155142/)

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PD - 95703<br>**----- End of picture text -----**<br>


## IRFPS3810PbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 100V<br>R  = 0.009Ω<br>DS(on)<br>G<br>ID = 170A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

The HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

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Super - 247™<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Soe **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 170 3 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A ~~ee>~~ IDM Pulsed Drain Current 670 ~~ae >~~ PD @TC = 25°C Power Dissi ~~..ao~~ pation 580 W Linear Derating Factor 3.8 W/°C ~~III NN>)N)N)")"yV™]~~ VGS Gate-to-Source Voltage ± 30 V ~~III NN>)N)N)")"yV™] a~~ EAS Single Pulse Avalanche Energy 1350 mJ ~~a~~ IAR Avalanche Current 100 A EAR Repetitive Avalanche Energy 58 mJ ~~OOO To a~~ dv/dt Peak Diode Recovery dv/dt 2.3 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~ee~~ 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.26||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|40||



www.irf.com 

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9/10/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|100<br>~~es~~<br>~~ss~~|–––<br>~~es~~<br>~~ss~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~ss~~|0.11<br>~~es~~<br>~~ss~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~ss~~<br>~~es~~<br>~~en~~|–––<br>~~ss~~<br>~~es~~|0.009|Ω|VGS= 10V, ID= 100A<br>@|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|3.0<br>~~es~~<br>~~en~~|–––<br>~~es~~|5.0<br>~~es~~|V<br>~~es~~|VDS= 10V, ID= 250µA|
|gfs|Forward Transconductance<br>~~es~~|52<br>~~en~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|S<br>~~es~~|VDS= 50V, ID= 100A|
|IDSS|Drain-to-Source Leakage Current|–––|–––|25|µA|VDS= 100V, VGS= 0V|
|||–––|–––|250||VDS= 80V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~Po~~|–––|–––|100|nA|VGS= 30V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -30V|
|Qg<br>es|Total Gate Charge|–––|260|390|nC|ID= 100A<br>VDS= 80V<br>VGS= 10V<br>®|
|Qgs<br>es|Gate-to-Source Charge|–––|49|74|||
|Qgd<br>es|Gate-to-Drain("Miller")Charge|–––|160|250|||
|td(on)<br>ee<br>ee|Turn-On Delay Time<br>~~en~~|–––<br>~~en~~<br>GO|24<br>~~en~~|–––<br>~~en~~|ns|VDD= 50V<br>ID= 100A<br>RG= 1.03Ω<br>VGS= 10V<br>)|
|tr<br>ee<br>ee|Rise Time<br>~~en~~|–––<br>~~en~~<br>GO|270<br>~~en~~|–––<br>~~en~~|||
|td(off)<br>ee<br>ee<br>~~ee~~|Turn-Off Delay Time<br>~~en~~|–––<br>~~en~~<br>GO|45<br>~~en~~|–––<br>~~en~~|||
|tf<br>ee<br>~~ee~~|Fall Time|–––<br>GO|140|–––|||
|LD<br>~~ee~~<br>~~EE~~|Internal Drain Inductance<br>~~EE~~|–––<br>~~EE~~|5.0<br>~~EE~~|–––<br>~~EE~~|nH<br>~~EE~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>)<br>~~&~~|
|LS<br>~~ee~~<br>~~EE~~|Internal Source Inductance<br>~~EE~~|–––<br>~~EE~~|13<br>~~EE~~|–––<br>~~EE~~|nH<br>~~EE~~||
|Ciss<br>~~EE~~|Input Capacitance<br>~~EE~~|–––<br>~~EE~~|6790<br>~~EE~~|–––<br>~~EE~~|pF<br>~~EE~~<br>fC|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~&~~<br>~~Ps~~|
|Coss<br>es|Output Capacitance|–––|2470|–––|||
|Crss<br>es|Reverse Transfer Capacitance|–––|990|–––|||
|Coss<br>es<br>es|Output Capacitance|–––|10740|10740 –––||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>~~Ps~~<br>fC|
|Coss<br>es<br>es<br>ee|Output Capacitance<br>OS|–––|1180|–––||VGS= 0V,  VDS= 80V,  ƒ = 1.0MHz<br>~~Ps~~<br>fC<br>Po|
|Cosseff.<br>es<br>ee|Effective Output Capacitance<br>OS|–––|2210|–––||VGS= 0V, VDS= 0V to 80V<br>fC<br>Po|
|**Source-Drain Ratings and Characteristics**<br>ee<br>OS<br>Po|||||||
|~~ee~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. **<br>~~ee~~|**Max. **<br>~~ee~~|**Units**|**Conditions**|
|IS<br>~~ee~~<br>~~es~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>|–––<br>~~ee~~<br>|–––<br>~~ee~~<br>~~-~~<br>|170<br>~~ee~~<br>~~a~~<br>|~~a~~<br>~~es~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~(Bp~~<br>~~®~~|
|ISM<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~**e**r~~|–––<br>~~r~~<br>~~Gs ee~~|–––<br>~~-~~<br>~~r~~<br>~~ee es~~|670<br>~~a~~<br>~~r~~<br>~~es~~|||
|VSD<br>~~es~~<br>~~SEE~~|Diode Forward Voltage<br>~~**e**r~~<br>e<br>~~SEE~~|–––<br>~~r~~<br>e<br>~~Gs ee~~<br>~~SEE~~|–––<br>~~-~~<br>~~r~~<br>~~ee es~~<br>~~SEE~~|1.3<br>~~a~~<br>~~r~~<br>~~es~~<br>~~SEE~~|V<br>~~a~~<br>~~es~~<br>~~SEE~~|TJ= 25°C, IS= 100A, VGS= 0V<br>~~(Bp~~<br>~~®~~|
|trr<br>~~es~~<br>~~SEE~~|Reverse Recovery Time<br><br>~~SEE~~|–––<br><br>~~Gs ee~~<br>~~SEE~~|220<br>~~- ~~<br><br>~~ee es~~<br>~~SEE~~|330<br> ~~a~~<br><br>~~es~~<br>~~SEE~~|ns<br>~~a~~<br>~~es~~<br>~~SEE~~|TJ= 25°C, IF= 100A<br>di/dt = 100A/µs<br>~~(Bp~~<br>~~®~~<br>~~:~~|
|Qrr<br>~~a~~|Reverse RecoveryCharge<br>~~a~~|–––|1640|2460|nC||
|ton<br>~~a~~|Forward Turn-On Time<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~:~~|||||



Repetitive rating;  pulse width limited by 

max. junction temperature. (See fig. 11) 

Starting TJ = 25°C, L = 0.27mH 

- RG = 25Ω, IAS = 100A. (See Figure 12) 

## Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- Coss eff. is a fixed capacitance that gives the same charging time 

- as Coss while VDS is rising from 0 to 80% VDSS 

   - Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 105A. 

ISD ≤ 100A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 

www.irf.com 

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 1000<br>VGS<br>TOP 15V<br>12V<br>10V Oe<br>8.0V 3 ——-<br> 100 7.0V<br>6.0V<br>5.5V<br>BOTTOM 5.0V<br>ee<br> 10 A AT<br>SSSSSS558 SSS SESH SS SSE<br> 1 Lattet<br>5.0V<br>0.1 e e eee<br>a eeee |<br>50µs PULSE WIDTH<br>H F T  = 25J °C<br>0.01<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 1000<br>T  = 175  CJ °<br>a<br> 100 iT AL F ifaEtyy]<br>(TA Vi tT | ft ee ey et et<br>°<br>i/ T  = 25  CJ PEEP<br> 10<br>Vivi ttt ty ty<br>A=Aer Pd SEPP EES EEE=<br>V      = 50VDS<br> 1 EEEPLT EEL EL 50µs PULSE WIDTH TE<br>5 6 7 8 9 10 11 12 13<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP 15V<br>12V<br>10V Ec<br>8.0V od ll<br>7.0V<br>6.0V<br>5.5V<br>BOTTOM 5.0V<br> 100 ll AT<br>Sanit Zammeitae seri<br>aa<br>" Age: ee TWH Pa<br> 10 5.0V<br>7 H<br>50µs PULSE WIDTH<br> 1 ALTE T  = 175J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>3.0<br>ID = 170A<br>2.5<br>Wa<br>2.0 BERETSyy)FL PLE ELEpyELT<br>1.5 =<br>PL ELEL LYE<br>ea<br>1.0<br>See 2eeeeee<br>0.5 pptTt ttttTtttyett tyyt<br>VGS = 10V<br>0.0 PF T ETEE T E  E_L_L_LELEEEL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20<br>ID = 100A<br>15000<br>VGS   = 0V,       f = 1 MHZ<br>T CCCrss  oss  iss  e)    = C  = C = Cgd ds gs + C+ Cgdgd,   Cds    SHORTED 16 aa VVVDSDSDS === 80V 50V 20V —TL<br>10000<br>e e Tr 12 pi Aef p y<br>Ciss<br>PNoreE ~~]ETI TAA<br>8<br>5000<br>P O M Coss PE Ear<br>P I N ETT TOE<br>Crss 4<br>0 EN SES HII FT FOR TEST CIRCUIT<br>1 10 — 100 0 Aree SEE FIGURE       13<br>0 100 200 300 400<br>VDS, Drain-to-Source Voltage (V)<br>Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>T  = 175  CJ °<br> 100 100 100µsec<br>1msec<br>T  = 25  CJ ° 10<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>V      = 0 V GS 1 Single Pulse<br> 10 ye] Ep tl pt<br>0.2 0.8 1.4 2.0 2.6 1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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200<br>LIMITED BY PACKAGE<br>Sac HAHE 2s Ves D.UT.Rp<br>160<br>-<br>120 Pee Re | Veo<br>| | Pest tt td sy<br>≤ 1<br>ptt Pit Te cccutth ys<br>≤ 0.1 %<br>80 FF LT ELT I NEL Dey Fase<br>Fig 10a.   Switching Time Test Circuit<br>PT PTT PPT PNG ;<br>40 PFET EEE ELING VDS<br>90%<br>Pitt tT tT tT tty )<br>0 FFT TEEPE |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 == ___--.. —————— — — _--.s —— ———__- oer<br>eSee<br>a a a a DO eeee EEL<br>D = 0.50<br>0.1 e r ant<br>0.20<br>San 0.10 EsnSINaSSERSe Ss esnee__ eeeog ea es<br>0.05<br>PDM<br>Ee tt a<br>0.01 | 0.020.01 2 (THERMAL RESPONSE)SINGLE PULSE t1<br>t2<br>ceea eres0 e e e Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.001 FT| ET | ET<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>;<br>E46 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>/ / |<br>IAS a a<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>*<br>QGS QGD<br>VG<br>Charge =<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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3000<br>ID<br>Ki tT TOP 41A<br>2500 71A<br>BOTTOM 100A<br>NanoBNRe oe<br>PIN | EE<br>2000 GENE eee<br>1500 NEATEP<br>KIN NE EE<br>1000 PNIRKPT RRAARN IX EEEE<br>PTARATE<br>500 Pi y UASS A<br>0<br>25 PET 50  ETT 75 100 125 SS 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>IT 3 .3µ a F<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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## Case Outline and Dimensions — Super-247 

## Super-247 (TO-274AA) Part Marking Information 

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E X A M P L E : T H IS  IS  A N  IR F P S 3 7 N 5 0 A  W IT H<br> A S S E M B L Y  L O T  C O D E  1 7 8 9<br>A S S E M B L E D  O N  W W  1 9 , 1 9 9 7<br>IN  T H E  A S S E M B L Y  L IN E  "C "<br>P A R T  N U M B E R<br>IN T E R N A T IO N A L  R E C T IF IE R<br>r IR F P S 3 7N 5 0 A o<br>               L O G O 7 1 9 C<br>1 7 8 9<br>[= |<br>D A T E  C O D E<br>A S S E M B L Y  L O T  C O D E<br>(Y Y W W )<br>Y Y  =  Y E A R<br>W W  =  W E E K<br>N o te : "P " in  a s se m b ly  lin e  p o s itio n T O P<br>**----- End of picture text -----**<br>


N o te : "P " in  a s se m b ly  lin e  p o s itio n in d ic a te s  "L e a d -F re e " 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

www.irf.com 

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