# Power MOSFET, N Channel, 600 V, 16 A, 0.4 ohm, TO-247AC, Through Hole
**URL**: https://novapart.co/products/IRFPC60LCPBF/power-mosfet-n-channel-600-v-16-a-04-ohm-to-247ac
**SKU**: IRFPC60LCPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.5100
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipatio
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 280W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | - |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1704009/)
**IRFPC60LC, SiHFPC60LC**
Vishay Siliconix
## **Power MOSFET**
## **FEATURES**
**PRODUCT SUMMARY** • Ultra Low Gate Charge VDS (V) 600 • Reduced Gate Drive Requirement Available RDS(on) (Ω) VGS = 10 V 0.40 • Enhanced 30 V VGS RatingGS Rating Rating **RoHS*** Qg (Max.) (nC) 120 • Reduced Ciss, Coss, Crssiss, Coss, Crss, Coss, Crssoss, Crss, Crssrss **COMPLIANT** Qgs (nC) 29 • Isolated Central Mounting Hole • Dynamic dV/dt Rated Qgd (nC) 48 • Repetitive Avalanche Rated ~~—~~ Configuration Single • Compliant to RoHS Directive 2002/95/EC D **DESCRIPTION** This new series of low charge Power MOSFETs achieve **TO-247AC** significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the S designer a new standart in power transistors for switching eo D ~~*~~ S applications. G The TO-247AC package is preferred for N-Channel MOSFET commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. **ORDERING INFORMATION** Package TO-247AC IRFPC60LCPbF Lead (Pb)-free SiHFPC60LC-E3 IRFPC60LC SnPb SiHFPC60LC ~~———~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) **PARAMETER SYMBOL LIMIT UNIT** Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TTCC = 100 °C = 25 °C ID 1610 A Pulsed Drain Current[a] IDM 64 Linear Derating Factor 2.2 W/°C Single Pulse Avalanche Energy[b] EAS 1000 mJ Repetitive Avalanche Current[a] IAR 16 A Repetitive Avalanche Energy[a] EAR 28 mJ Maximum Power Dissipation TC = 25 °C PD 280 W Peak Diode Recovery dV/dt[c] dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300[d] 10 lbf · in Mounting Torque 6-32 or M3 screw ~~ee~~ 1.1 N · m ~~aii~~ **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 7.2 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12). c. ISD ≤ 16 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
- Reduced Gate Drive Requirement Available
- • Enhanced 30 V VGS RatingGS Rating Rating **RoHS*** • Reduced Ciss, Coss, Crssiss, Coss, Crss, Coss, Crssoss, Crss, Crssrss **COMPLIANT**
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standart in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
www.vishay.com 1
This datasheet is subject to change without notice.
> THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**IRFPC60LC, SiHFPC60LC**
## Vishay Siliconix
**==> picture [59 x 48] intentionally omitted <==**
## **THERMAL RESISTANCE RATINGS**
|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum Junction-to-Ambient|RthJA|-|40|°C/W|
|Case-to-Sink, Flat, Greased Surface|RthCS|0.24|-||
|Maximum Junction-to-Case (Drain)|RthJC|-|0.45||
|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||600|-|-|V|
|VDSTemperature Coefficient|ΔVDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.63|-|V/°C|
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA||2.0|-|4.0|V|
|Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 600 V, VGS= 0 V||-|-|25|μA|
|||VDS= 480 V, VGS= 0 V, TJ= 125 °C||-|-|250||
|Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 9.6 Ab|-|-|0.40|Ω|
|Forward Transconductance|gfs|VDS= 50 V, ID= 9.6 A||11|-|-|S|
|**Dynamic**||||||||
|Input Capacitance|Ciss|VGS= 0 V,
VDS= 25 V,
f = 1.0 MHz, see fig. 5||-|3500|-|pF|
|Output Capacitance|Coss|||-|400|-||
|Reverse Transfer Capacitance|Crss|||-|39|-||
|Total Gate Charge|Qg|VGS= 10 V|ID= 16 A, VDS= 360 V,
see fig. 6 and 13b|-|-|120|nC|
|Gate-Source Charge|Qgs|||-|-|29||
|Gate-Drain Charge|Qgd|||-|-|48||
|Turn-On Delay Time|td(on)|VDD= 300 V, ID= 16 A,
Rg= 4.3Ω, RD= 18Ω, see fig. 10b||-|17|-|ns|
|Rise Time|tr|||-|57|-||
|Turn-Off Delay Time|td(off)|||-|43|-||
|Fall Time|tf|||-|38|-||
|Internal Drain Inductance|LD|Between lead,
6 mm (0.25") from
package and center of
die contact
D
S
G||-|5.0|-|nH|
|Internal Source Inductance|LS|||-|13|-||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous Source-Drain Diode Current|IS|MOSFET symbol
showing the
integral reverse
p - n junction diode
S
D
G||-|-|16|A|
|Pulsed Diode Forward Currenta|ISM|||-|-|64||
|Body Diode Voltage|VSD|TJ= 25 °C, IS= 16 A, VGS= 0 Vb||-|-|1.8|V|
|Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= 16 A, dI/dt = 100 A/μs||-|650|980|ns|
|Body Diode Reverse Recovery Charge|Qrr|||-|6.0|9.0|μC|
|Forward Turn-On Time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||
## **Notes**
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com 2
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
## , ¥f **IRFPC60LC, SiHFPC60LC** Vishay Siliconix Vv ~~Be~~ **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
**Fig. 1 - Typical Output Characteristics, TC = 25 °C**
**Fig. 3 - Typical Transfer Characteristics**
**Fig. 2 -Typical Output Characteristics, TC = 150 °C**
**Fig. 4 - Normalized On-Resistance vs. Temperature**
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
www.vishay.com 3
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
> **IRFPC60LC** ~~a~~ **, SiHFPC60LC** Vishay Siliconix
**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage**
**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage**
**Fig. 7 - Typical Source-Drain Diode Forward Voltage**
**Fig. 8 - Maximum Safe Operating Area**
www.vishay.com 4
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**IRFPC60LC, SiHFPC60LC**
## Vishay Siliconix
**Fig. 9 - Maximum Drain Current vs. Case Temperature**
**==> picture [150 x 227] intentionally omitted <==**
**----- Start of picture text -----**
RD
VDS
VGS
D.U.T.
RG +- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
=
Fig. 10a - Switching Time Test Circuit
VDS
90 % —
| i}
I
H
r \/
10 % /\ |
VGS
td(on) tr td(off) tf
**----- End of picture text -----**
**Fig. 10b - Switching Time Waveforms**
**Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case**
**==> picture [197 x 94] intentionally omitted <==**
**----- Start of picture text -----**
L
VDS
Vary tp to obtain
required IAS
RG D.U.T +
- [V][ DD]
V\
IAS
10 V in
t p 0.01 Ω
**----- End of picture text -----**
**Fig. 12a - Unclamped Inductive Test Circuit**
**==> picture [147 x 97] intentionally omitted <==**
**----- Start of picture text -----**
VDS
t
<*— p eel VDD
VDS /|\ J.
/\\
IAS ___ Le
**----- End of picture text -----**
**Fig. 12b - Unclamped Inductive Waveforms**
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
www.vishay.com 5
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**IRFPC60LC, SiHFPC60LC**
## Vishay Siliconix
**Fig. 12c - Maximum Avalanche Energy vs. Drain Current**
**==> picture [88 x 94] intentionally omitted <==**
**----- Start of picture text -----**
QG
10 V
QGS QGD
VG
Charge
**----- End of picture text -----**
**Fig. 13a - Basic Gate Charge Waveform**
**==> picture [146 x 147] intentionally omitted <==**
**----- Start of picture text -----**
Current regulator
1 Same type as D.U.T.
50 kΩ
12 V 0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
**----- End of picture text -----**
**Fig. 13b - Gate Charge Test**
www.vishay.com 6
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**IRFPC60LC, SiHFPC60LC**
Vishay Siliconix
**==> picture [59 x 48] intentionally omitted <==**
**==> picture [286 x 494] intentionally omitted <==**
**----- Start of picture text -----**
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
+
- - +
Rg • dV/dt controlled by Rg +
•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD
• D.U.T. - device under test
Driver gate drive
Period D = P.W.
P.W. Period
VGS = 10 V [a]
D.U.T. lSD waveform
Reverse
recovery Body diode forward
current current dI/dt
D.U.T. VDS waveform Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
**----- End of picture text -----**
**Fig. 14 - For N-Channel**
_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91244._
Document Number: 91244 S11-0443-Rev. B, 14-Mar-11
www.vishay.com 7
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Package Information**
Vishay Siliconix
**==> picture [90 x 53] intentionally omitted <==**
**----- Start of picture text -----**
, §#£f
“wv BS
**----- End of picture text -----**
www.vishay.com
## **TO-247AC (High Voltage)**
**==> picture [505 x 465] intentionally omitted <==**
**----- Start of picture text -----**
4 4 A L A |
B E ØP7 (Datum B)
E/2 S A2 Ø k M D B M
3 R/2 ØP1
A
D2
Q
r i A E 7 =e
2 x R 4 4
(2) D D1
ak | ain
1 2 3 D 4
Thermal pad
5 L1
C L 4
E1
MA See view B i A o| TUt 0.01 A M D B M
2 x b2 C View A - A
2 x e
3 x b
b4 A1
0.10 M C A M
s —o 57 7 _
Planting (b1, b3, b5) Base metal
Lead Assignments
1. Gate D D E E
2. Drain
3. Source C C (c) c1
4. Drain
| (b, b2, b4) ss
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS INCHES MILLIMETERS INCHES
ee ee
DIM. MIN. MAX. MIN. MAX. DIM. — MIN. MAX. MIN. MAX.
A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051
a | +} ——
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 a 0.625
sses A2 1.17 ee 2.49 es 0.046 0.098 nn E1 13.72 - 0.540 -
— b 0.99 1.40 0.039 0.055 — e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
ee b2 a 1.53 2.39 0.060 0.094 L a 14.20 16.25 0.559 0.640
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
——— b4 2.42 3.43 0.095 0.135 N es 7.62 BSC 0.300 BSC
—_}| b5 2.59 3.38 ae 0.102 0.133 a Ø P a 3.51 3.66 0.138 0.144
c 0.38 0.86 —— 0.015 0.034 ee Ø P1 - 7.39 - 0.291
I c1 0.38 0.76 0.015 0.030 > Q 5.31 5.69 0.209 0.224
— D ft 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC
ee es —
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
PC —
**----- End of picture text -----**
## **Notes**
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
For technical questions, contact: hvm@vishay.com
**1**
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Legal Disclaimer Notice** Vishay
www.vishay.com
**==> picture [59 x 48] intentionally omitted <==**
## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
## **Material Category Policy**
**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.**
**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.**
**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.**
Revision: 02-Oct-12
Document Number: 91000
**1**
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