# Power MOSFET, N Channel, 200 V, 94 A, 0.023 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:8658617/)

**URL**: https://novapart.co/products/IRFP90N20DPBF/power-mosfet-n-channel-200-v-94-a-0023-ohm-to
**SKU**: IRFP90N20DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9800
**Stock**: 1000+
**Lead Time**: 225 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 580W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 94A |
| Drain Source On State Resistance | 0.023ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8658617/)

PD - 95664 

## **SMPS MOSFET** 

## IRFP90N20DPbF 

## **Applications** 

High frequency DC-DC converters Lead-Free 

HEXFET ® Power MOSFET **VDSS RDS(on) max ID 200V 0.023** Ω **94A** eeee 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

**==> picture [54 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247AC<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 94 ~~[shIT 5 —~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 A ~~ee~~ IDM Pulsed Drain Current 380 ~~a~~ PD @TC = 25°C Power Dissipation 580 W ~~a~~ Linear Derating Factor 3.8 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt ~~ee~~ Peak Diode Recovery dv/dt 6.7 V/ns ~~eea~~ TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~ff~~ a Mounting  torqe,  6-32  or M3  screw 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

|es|||||
|---|---|---|---|---|
|es<br>———|**Parameter**<br><br>———<br>ee|**Typ.**<br>|**Max.**<br>oe|**Units**<br>oe|
|RθJC<br>esa<br>———|Junction-to-Case<br>a<br>———<br>ee|–––<br>a|0.26<br>oe|°C/W<br>oe|
|RθCS<br>———|Case-to-Sink, Flat, Greased Surface<br>———<br>ee|0.24|–––<br>oe||
|RθJA<br>———|Junction-to-Ambient<br>———<br>ee|–––|40<br>oe||



> Notes 0) through © are  on page 8 www.irf.com 

1 

IRFP90N20DPbF 

## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**||||
|---|---|---|---|---|
|V(BR)DSS|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br>Drain-to-Source Breakdown Voltage<br>200<br>–––<br>–––<br>V<br>es<br>~~ee~~<br>~~ee~~||**Conditions**<br>VGS= 0V, ID= 250µA||
|∆V(BR)DSS/∆TJ|JBreakdown Voltage Temp. Coefficient –––      0.24  –––     V/°C    Reference to 25°C, I<br>~~es~~|–––      0.24  –––     V/°C    Reference to 25°C, I|–––      0.24  –––     V/°C    Reference to 25°C, ID= 1mA||
|RDS(on)|Static Drain-to-Source On-Resistance<br>–––<br>––– 0.023<br>Ω<br>~~a~~||VGS= 10V, ID= 56A<br>@||
|VGS(th)|Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>~~ee~~||VDS= VGS, ID= 250µA||
|IGSS<br>IDSS|–––<br>–––<br>25<br>µA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>nA<br>Drain-to-Source Leakage Current<br>~~er~~<br>~~|~~tT<br>~~ee~~<br>ee||VDS= 200V, VGS= 0V<br>VDS= 160V, VGS= 0V, TJ= 150°C<br>VGS= 30V<br>VGS= -30V|= 150°C|
|**Dynamic @ T**|**Dynamic @ TJ = 25°C (unless otherwise specified)**||||
|gfs|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>Forward Transconductance<br>39<br>–––<br>–––<br>S<br>es<br>~~ee ee~~<br>~~es~~||**Conditions**<br>VDS= 50V, ID= 56A||
|Qg|Total Gate Charge<br>–––<br>180     270                I<br>~~a~~|180     270                I|180     270                ID= 56A||
|Qgs<br>Gate-to-Source Charge<br>–––<br>45<br>67<br>nC<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>87<br>130<br>td(on)<br>Turn-On Delay Time<br>–––<br>23<br>–––<br>tr<br>Rise Time<br>–––<br>160<br>–––<br>td(off)<br>Turn-Off Delay Time<br>–––<br>43<br>–––<br>tf<br>Fall Time<br>–––<br>79<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>6040<br>–––<br>Coss<br>Output Capacitance<br>–––<br>1070<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>170<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>8350<br>–––<br>Coss<br>Output Capacitance<br>–––<br>420<br>–––<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>870<br>–––<br>ns<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~Rs~~<br>ee~~es~~<br>~~ee oe~~<br>~~es~~<br>es<br>~~es~~<br>es<br>es<br>es|||VDS= 160V<br>VGS= 10V,<br>VDD= 100V<br>ID= 56A<br>RG= 1.2Ω<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz<br>VGS= 0V, VDS= 0V to 160V<br>~~@~~<br>°<br>=||



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

|**Avalanche Characteristics**|
|---|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>1010<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>56<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>58<br>mJ<br>ree~~G~~<br>eG<br>Se<br>nn<br>©|
|**Diode Characteristics**|



|~~ne~~|**Parameter**<br>ee<br>~~|~~|**Min.**<br>ee<br>~~||~~|**Typ. **<br>ee<br>~~|~~|**Max. **<br>ee|**Units**|**Conditions**<br>~~(a~~|
|---|---|---|---|---|---|---|
|IS<br>~~ne~~|Continuous Source Current<br>(Body Diode)<br>~~|~~|–––<br>~~||~~|–––<br>~~|~~|94||S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~(a~~<br>~~@~~|
|ISM<br>~~ne~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~|~~|–––<br>~~||~~|–––<br>~~|~~|380|||
|VSD<br>~~ne~~<br>~~Se~~|Diode Forward Voltage<br>~~|~~|–––<br>~~| |~~<br>ed|–––<br>~~|~~|1.5|V|TJ= 25°C, IS= 56A, VGS= 0V<br>~~(a~~<br>~~@~~|
|trr<br>~~Se~~|Reverse Recovery Time<br>~~es~~|–––<br>~~es~~<br>ed|230<br>~~es~~|340<br>~~es~~|ns<br>~~es~~|TJ= 25°C, IF= 56A<br>di/dt = 100A/µs<br>~~@~~<br>~~es~~<br>~~®~~|
|Qrr<br>~~Se~~<br>~~ee~~|Reverse RecoveryCharge<br>~~ee~~|–––<br>ed<br>~~ee~~|1.9<br>~~ee~~|2.8<br>~~ee~~|µC||
|ton<br>~~ee~~|Forward Turn-On Time<br>~~ee~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~ee~~<br>~~®~~|||||



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2 

## IRFP90N20DPbF 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>                   12V a ee ee Pe cs ee                    12V a eeee<br>                   10V                    10V<br>100                8.0V a 22 eel                    8.0V i oa all<br>                   7.0V                    7.0V<br>                   6.0V                    6.0V<br>                   5.5V 100                5.5V<br>BOTTOM   5.0V (Senne BOTTOM   5.0V aoe<br>10 re a ee | ll | HE<br>44S FS SS SSS eel Peet geet Et<br>mem | HH gett 5.0V LTH<br>1 5.0V<br>7 a ee nD<br>10<br>0.1 e e ense> -c1(Ceaeeniealt1||| en eae S SSSSa snteaeillleae<br>2 ee | oe” AO |<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Sat ee ee eee Ait<br>Tj = 25°C Tj = 175°C<br>0.01 PI S enn Ht 1 animafj Po rai|<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.00 3.5<br>I D = 94A<br>PTT TY] Tye 3.0 m eeeEE EEEEEE<br>a TJ = 175°C ;<br>Patt} 2.5 Oe<br>100.00<br>7 aa aS SS pt |} ttt tt<br>2.0<br>Af)0) | | Fe be | tytt tt At<br>2 ee Oo ee ee Ft ttt tee tT ye Tf<br>on ee eee Tt<br>TJ = 25°C 1.5<br>10.00 ft | | oe 4AT TT<br>1.0<br>= == HCEE<br>rt VDS = 15V on 0.5 —<br>1.00 PE 20µs PULSE WIDTH 0.0 PREFt}Tt | tlt T V GS = 10V<br>5.0 7.0 9.0 11.0 13.0 15.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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3 

## IRFP90N20DPbF 

**==> picture [437 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000000 12<br>VGS   = 0V,       f = 1 MHZ ID = 56A VDS =  160V<br>Ciss    = Cgs + Cgd,   Cds    SHORTED VDS =  100V<br>100000 Crss    = Cgd  10 VDS =  40V<br>a nni C  = C + C pt yy<br>oss   ds  gd<br>Fg S co pit tt t y<br>10000 a 7<br>Ciss<br>Coss<br>1000 aS e 5 a<br>Crss<br>100 E T 2 EET<br>10 eA 0 Vit iti [tif]<br>0 40 80 120 160 200<br>1 10 100 1000<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>GS<br>C, Capacitance(pF) V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**==> picture [210 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000.00<br>T = 175°C<br>100.00 J<br>———ey 4<br>Ay or ee<br>T = 25°C<br>J<br>10.00<br>SSS SS ES ee<br>———<br>1.00 | Jif | | |<br>f y<br>VGS = 0V<br>0.10 oo<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10000<br>OPERATION IN THIS AREA<br>1000 LIMITED BY RDS(on)<br>ami<br>100 oe Seis<br>ZA M eS<br>100µsec<br>Ea eee eee al<br>10 a 1msec<br>PSS SEER<br>1 | Tc = 25°C 10msec<br>Tj = 175°C<br>Single Pulse<br>Speeds<br>0.1 esis SRS<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

4 

## IRFP90N20DPbF 

**==> picture [201 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>LIMITED BY PACKAGE<br>PN<br>80 Pi PN— EE[|<br>60<br>PCEEPSAE ET<br>40 PPPETPENTTEEI<br>20 COT<br>0 PE yy PET Te<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**==> picture [99 x 41] intentionally omitted <==**

**----- Start of picture text -----**<br>
-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**==> picture [138 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>10%<br>VGS | | |<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

**==> picture [435 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1<br>FFa tHEH<br>a<br>D = 0.50<br>0.1 s re ||<br>= 0.20 SS SS SS Sas<br>S ee sO OO Os OO OO<br>P 0.10 T Gf ff<br>0.05<br>P DM<br>0.01 = 0.020.01 ASNe (THERMAL RESPONSE)SINGLE PULSE et a t 1<br>t 2<br>a<br>a Notes:<br>1. Duty factor D = t   / t1 2<br>a ell 2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Z        )thJC<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFP90N20DPbF 

**==> picture [159 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>aa tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [121 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>~~ tp<br>al<br>a<br>IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2100<br>ID<br>NEE<br>TOP 23A<br>40A<br>NE<br>1680 PN BOTTOM 56A<br>1260 GENERSURNER EERE<br>840<br>NONBNEEEEEEE<br>P AN \| | |<br>420 Pp ESN AARN |<br>pfSS A<br>Pt SS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

**==> picture [131 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
— QG *<br>QGS QGD<br>VG<br>bee<br>**----- End of picture text -----**<br>


Charge 

**Fig 13a.** Basic Gate Charge Waveform 

**==> picture [130 x 126] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>| 50KΩ !<br>12V .2µF<br>! ees .3µF<br>+<br>D.U.T. -VDS<br>VGS<br>_@<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFP90N20DPbF 

**==> picture [276 x 431] intentionally omitted <==**

**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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7 

## IRFP90N20DPbF 

## TO-247AC Package OutlinereDimensions are shown owin millimeters (inches). 

**==> picture [360 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY LOT CODE 5657 INTERNATIONAL yO PART NUMBER<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO | 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>Pulse width ≤ 300µs; duty cycle ≤ 2%.<br>Coss eff. is a fixed capacitance that gives the same charging time<br>     as Coss while VDS is rising from 0 to 80% VDSS<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. 

Starting TJ = 25°C, L = 0.64mH RG = 25Ω, IAS = 56A. ISD ≤ 56A, di/dt ≤ 470A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

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8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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