# Power MOSFET, HEXFET, N Channel, 75 V, 195 A, 0.0018 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2456727/)

**URL**: https://novapart.co/products/IRFP7718PBF/power-mosfet-hexfet-n-channel-75-v-195-a-00018-ohm
**SKU**: IRFP7718PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.3900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 517W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 517W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0018ohm |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 0.0018ohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456727/)

## Strong _IR_ FET™ IRFP7718PbF ~~po~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

-  Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

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HEXFET [® ] Power MOSFET<br>**----- End of picture text -----**<br>


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D VDSS  75V<br>RDS(on) typ.  1.45m <br>G max   1.80m <br>ID (Silicon Limited)  355A <br>S<br>= ID (Package Limited) 195A<br>D<br>S<br>D<br>G<br>TO-247AC<br>G  D  S<br>Gate  Drain  Source<br>**----- End of picture text -----**<br>


|**Base part number**|**Package Type**|**Standard Pack**<br>**Form**|**Standard Pack**<br>**Quantity**|**Orderable Part Number**|
|---|---|---|---|---|
|IRFP7718PbF|TO-247|Tube|25|IRFP7718PbF|



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6<br>ID = 100A<br>4<br>TJ = 125°C<br>2<br>T = 25°C<br>J<br>0<br>4 8 12 16 20<br>VGS, Gate-to-Source Voltage (V)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


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400<br>Limited By  Package<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFP7718PbF 

## **Absolute Maximium Rating** 

||**Symbol**|**Parameter**|**Max.**|**Max.**||**Units**|
|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)|355||||
||ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|250|||A|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V(Wire Bond Limited)|195||||
||IDM|Pulsed Drain Current|1590||||
||PD @TC= 25°C|Maximum Power Dissipation|517|||W|
|||Linear DeratingFactor|3.5|||W/°C|
||VGS|Gate-to-Source Voltage|± 20|||V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|||°C|
|||SolderingTemperature,for 10 seconds(1.6mm from case)|300||||
|||Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)||10 lbf·in (1.1 N·m)||
||**Avalanche Characteristics**||||||
|EAS(Thermallylimited)<br>SinglePulseAvalancheEnergy <br>1160<br>mJ<br>EAS (tested)<br>SinglePulseAvalancheEnergyTestedValue <br>2100<br>IAR<br>AvalancheCurrent<br>See Fig 14, 15, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>~~——~~|||||||
||**Thermal Resistance**||||||
||**Symbol**|**Parameter**|**Typ.**||**Max.**|**Units**|
||RJC|Junction-to-Case|–––||0.29||
||RCS|Case-to-Sink,Flat Greased Surface|0.24||–––|°C/W|
||RJA|Junction-to-Ambient|–––||40||



**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|75|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|42|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 2mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|1.45  1.80|1.45  1.80|m|VGS= 10V,ID= 100A|
|||–––|1.60|–––||VGS=6V,ID=50A|
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V|VDS= VGS,ID= 250µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS=75V,VGS=0V|
|||–––|–––|150||VDS=75V,VGS=0V,TJ=125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|0.9|–––|||



## **Notes:** 

-  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 233µH, RG = 50, IAS = 100A, VGS =10V. 

-  ISD  100A, di/dt  1279A/µs, VDD  V(BR)DSS, TJ  175°C. 

-  Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  This value determined from sample failure population, starting TJ =25°C, L= 233µH, RG = 50, IAS =100A, VGS =10V. 

-     Pulse drain current is limited at 780A by source bonding technology. 

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**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~CG~~|**Parameter**<br>~~CG~~|**Min.**<br>~~CG~~|**Typ. **|**Max.**<br>~~OG~~|**Units**<br>~~OG~~|**Units**<br>**Conditions**<br>~~OG~~|
|---|---|---|---|---|---|---|
|gfs<br>~~CG~~<br>~~a GG~~|Forward Transconductance<br>~~CG~~<br>~~GG~~|420<br>~~CG~~<br>~~GG~~|–––<br>~~GG~~|–––<br>~~OG~~<br>~~GG~~|S<br>~~OG~~<br>~~GG~~|VDS= 10V,ID=100A<br>~~OG~~<br>~~GG~~|
|Qg<br>~~a GG~~<br>~~a~~|Total Gate Charge<br>~~GG~~|–––<br>~~GG~~|552<br>~~GG~~|830<br>~~GG~~|nC<br>~~GG~~|ID= 100A<br>VDS= 38V<br>VGS= 10V<br>~~GG~~|
|Qgs|Gate-to-Source Charge|–––|119|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|168|–––|||
|Qsync<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|384|–––|||
|td(on)<br>~~es~~<br>~~es~~|Turn-On DelayTime|–––|58|–––|ns|VDD= 38V<br>ID= 100A<br>RG= 2.6<br>VGS= 10V|
|tr<br>~~es~~|Rise Time|–––|164|–––|||
|td(off)<br>~~a~~|Turn-Off DelayTime|–––|266|–––|||
|tf|Fall Time|–––|160|–––|||
|Ciss|Input Capacitance|––– 29550|––– 29550|––– 29550<br>–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 100KHz,  See Fig.7|
|Coss<br>~~CT~~|Output Capacitance<br>~~CT~~|–––|2270|–––|||
|Crss<br>~~CT~~|Reverse Transfer Capacitance<br>~~CT~~|–––|1395|–––|||
|Coss eff.(ER)<br>~~CT~~|Effective Output Capacitance<br> (EnergyRelated)<br>~~CT~~|–––|2010|–––||VGS= 0V, VDS = 0V to 60V|
|Coss eff.(TR)<br>~~CT~~<br>~~a eG~~|Output Capacitance(Time Related)<br>~~CT~~<br>~~eG~~|–––<br>~~eG~~|2560<br>~~eG~~|–––<br>~~eG~~||VGS= 0V,VDS = 0V to 60V|
|**Diode Characteristics**<br>~~CT~~<br>~~oe~~|||||||
|**Symbol**<br>~~GG~~<br>~~oe~~|**Parameter**<br>~~GG~~<br>~~oe~~|**Min.**<br>~~GG~~|**Typ.**<br>~~GG ~~|**Max.**<br> ~~OG~~|**Units**<br>~~OG~~|**Units**<br>**Conditions**<br>~~OG~~|
|IS<br>~~oe~~|Continuous Source Current<br>(BodyDiode)<br>~~oe~~|–––|–––|355|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~ia~~|
|ISM<br>~~oe~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~oe~~<br>~~ee~~|–––<br>~~ee~~|–––|1590|||
|VSD<br>~~oe~~<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~oe~~<br>~~ee ~~<br>~~G~~|–––<br> ~~ee~~<br>~~G~~|–––|1.3|V|TJ= 25°C,IS= 100A,VGS= 0V<br>~~ia~~|
|dv/dt|Peak Diode Recoverydv/dt|–––|8.6|–––|V/ns T|V/ns TJ= 175°C,IS=100A,VDS= 75V|
|trr<br>~~a~~|Reverse Recovery Time<br>~~a~~|–––<br>~~a~~|75<br>~~a~~|–––<br>~~a~~|ns<br>~~a~~|TJ =25°CVDD= 64V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~a~~|80<br>~~a~~|–––<br>~~a~~|||
|Qrr<br>~~a~~<br>~~a~~|Reverse Recovery Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|208<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~||
|||–––<br>~~a~~<br>~~a~~|251<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|IRRM<br>~~a~~<br>~~es~~|ReverseRecovery Current<br>~~a~~|–––<br>~~a~~|4.8<br>~~a~~|–––<br>~~a~~|A<br>~~a~~||



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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>100 fea 5.5V<br>5.0V<br>BOTTOM 4.5V<br> 60µs PULSE WIDTH<br>10 Tj = 25°C<br>ee ee |<br>4.5V<br>1 PE eel<br>Ht Ll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>T = 175°C<br>J<br>100<br>aaa<br>10 ff<br>iff TJ = 25°C<br>1 Aa<br>Pf if |<br>VDS = 25V<br>aA  60µs PULSE WIDTH<br>0.1<br>2.0 pf 3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>Yea<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>100<br>4.5V<br>YA EE EE<br> 60µs PULSE WIDTH<br>Tj = 25°C<br>10 A ill<br>Lill ll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

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2.5<br>ID = 100A<br>VGS = 10V<br>2.0<br>OY<br>1.5 LAL<br>Y<br>1.0 LETA<br>0.5<br>TEL LLL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


## **Fig 6.** Normalized On-Resistance vs. Temperature 

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Fig 5.   Typical Transfer Characteristics  Fig 6.<br>1000000 14<br>VCCGS  iss rss    = C = C= 0V,       f gs gd + Cgd= 1 MHZ,  Cds SHORTED 12 ID= 100AD= 100A= 100A V V DSDS= DS=  = 636338V 0V 8V<br>100000 T Coss  = Cds + Cgd 10 VDS=DS== 1 5V<br>ee ee eee Ciss |] 8 AEeeee eeeee 7eee 7e 7 7<br>10000<br>I lh 6 Samy 4am<br>Coss<br>eee || 4 py|y||<br>1000 Crss<br>2<br>0<br>100<br>a Aiililian mati 0 AGEEaee 100 200 300 400 500 600<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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14<br>ID= 100AD= 100A= 100A V =  0V<br>12 V = 636338V<br>DSDS= DS=<br>VDS=DS== 1 5V<br>10<br>8 AEeeee eeeee 7eee 7e 7 7<br>6 Samy 4am<br>4<br>py|y||<br>2<br>0<br>0 AGEEaee 100 200 300 400 500 600 700<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>1000<br>100µsec<br>eee See<br>a, T = 175 ° C 1msec eae<br>J<br>100<br>100 pf a eePt yp [sas] OE<br>Limited by Package<br>SS eR<br>10<br>POP fF | A, 10msec<br>T = 25°C OPERATION IN THIS AREA<br>10 —————— J  FoPEP LIMITED BY R DS (on) E<br>1<br>Tc = 25°C DC<br>Pfip V GS  = 0V Tj Single Pulse= 175°C ——— ha]<br>1.0 | ey pp 0.1 COOSei meeCoo<br>0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10<br>VSD, Source-to-Drain Voltage (V) VDS,  Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>90 5.0<br>Id = 2.0mA<br>4.0<br>85<br>3.0<br>2.0<br>80<br>1.0<br>75 0.0<br>0 10 20 30 40 50 60 70 80<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>Energy (µJ)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to–Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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2.2<br>VGS = 5.5V<br>VGS = 6.0V<br>2.0 V GS  = 7.0V<br>VGS = 8.0V<br>VGS = 10V<br>1.8<br>1.6<br>1.4<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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1<br>D = 0.50<br>0.1 UIIerENEeeUIEud——_ 1<br>Se 0.20<br>0.10<br>0.05<br>0.01<br>0.02<br>0.01<br>0.001<br>in 2 me | | |<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Peer See<br>0.0001 Magni EHH |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>THLE pT<br>100 AHL iil<br>oNFET SSLPSSAPPAF TTT<br>PEATE NAPH<br>10<br>CECI SEL LTT<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150 ° C. (Single Pulse) a OODns = =<br>rTILeeOLRSAESEE<br>0 0OT<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse width 

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1200<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>1000<br>I D  = 100A 1.Avalanche failures assumption:<br>Purely a thermal phenomenon and failure occurs at a<br>800 an temperature far in excess of Tjmaxjmax. This is validated for every<br>\\Creeeeeee part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>600 PERNUE ELE    exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>400 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>200 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>HITSNN [NS]<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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4.5 30<br>IF = 60A<br>4.0 25 VR = 64V<br>TJ = 25°C<br>3.5 T = 125°C<br>PERLE 20 J ay<br>3.0<br>PSO ep<br>15<br>2.5 ID = 250µA<br>ID = 1.0mA 10<br>2.0 at I D  = 1.0A SEDANSta-<br>1.5 5<br>1.0 PCEEEEEPLN ENS o<br>0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>0 200 400 600 800 1000<br>TJ , Temperature ( °C )<br>diF /dt (A/µs)<br>VGS(th) Gate threshold Voltage (V)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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1000<br>30<br>IF = 60A<br>IF = 100A<br>25 VR = 64V 800 VR = 64V<br>TJ = 25°C T J  = 25°C<br>T = 125°C TJ = 125°C<br>20 J<br>600<br>15 FEwo, A<br>400<br>10<br>OO |<br>200<br>5 Fo| ee<br>| 0 lee<br>0 | | ft<br>0 200 400 600 800 1000<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>diF /dt (A/µs)<br>Fig 19.   Typical Recovery Current vs. dif/dt  Fig 20.   Typical Stored Charge vs. dif/dt<br>1000<br>IF = 100A<br>VR = 64V<br>800 T J  = 25°C<br>TJ = 125°C<br>600<br>400<br>200 Le<br>0 | tt ft<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>QRR (nC)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback March 14, 2014 ~~IEEE~~ 

|4 ~~Ié4R~~ 

IRFP7718PbF ~~P|~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VD S L D R IVE R<br>R G D .U .T +<br>- [V][D D]<br>IA S<br>20V<br>tp 0.01 <br>**----- End of picture text -----**<br>


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V (B R )D S S<br>— tp ><br>I A S<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

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i Id<br>Vds t<br>Vgs<br>'<br>H<br>Vgs(th)<br>Q gs1 Q gs2 Q gd Q godr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFP7718PbF 

## **TO-247AC Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-247AC Part Marking Information** 

## Notes: This part marking information applies to devices produced after 02/26/2001 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL pod<br>ASSEMBLED ON WW 35, 2001 RECTIFIER r IRFPE30 yt<br>LOGO |  135H ‘|<br>IN THE ASSEMBLY LINE "H"<br>T 56           57 IaR<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC  package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~IsaR~~ 

IRFP7718PbF 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br> (perJEDEC JESD47F) ††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site:  http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101N Sepulveda Blvd, El Segundo, California 90245, USA To contact International Rectifier, please visit htp://www.irf.com/whoto-call/ 

10 ~~P|~~ 

~~_~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFP7718PBF/power-mosfet-hexfet-n-channel-75-v-195-a-00018-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfp7718pbf/mosfet-n-ch-75v-195a-to-247ac/dp/2456727)
---

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