# Power MOSFET, N Channel, 60 V, 172 A, 3300 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2406521/)

**URL**: https://novapart.co/products/IRFP7537PBF/power-mosfet-n-channel-60-v-172-a-3300-ohm-to
**SKU**: IRFP7537PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1400
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:172A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00275ohm; Rds(on) Test Volta; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 172A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2406521/)

## Strong _IR_ FET™ IRFP7537PbF 

HEXFET[® ] Power MOSFET 

## **Application** 

- Brushed Motor drive applications 

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Brushed Motor drive applications<br>BLDC Motor drive applications  D VDSS  60V<br>Battery powered circuits Battery powered circuits<br>Half-bridge and full-bridge topologies   RDS(on) typ. 2.75m <br>Synchronous rectifier applications  G             max  3.30m <br>Resonant mode power supplies<br>OR-ing and redundant power switches  S ID   172A<br>Ej==<br>DC/DC and AC/DC converters<br>DC/AC Inverters<br>Benefits<br>Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness  G  [D S ]<br>Fully Characterized Capacitance and Avalanche SOA<br>Enhanced body diode dV/dt and dI/dt Capability    TO-247<br>IRFP7537PbF<br>Lead-Free, RoHS Compliant<br>G  D  S<br>Gate  Drain  Source<br>[-— —_}—_<br>Standard Pack<br>Base part number  Package Type  Orderable Part Number<br>Form  Quantity<br>IRFP7537PbF  TO-247  Tube  25  IRFP7537PbF<br>**----- End of picture text -----**<br>


- BLDC Motor drive applications 

- Battery powered circuits Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

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12<br>ID = 100A<br>10 TLE EEE<br>8<br>CEE<br>6 T J  = 125°C<br>CAAT<br>4<br>SEE<br>2 CEERI TJ = 25 ° C<br>0<br>CECE LCE<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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200<br>150<br>SURE<br>100<br>TAN<br>50 TTP NO<br>:<br>0 LL ELLA<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFP7537PbF 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V||172|||
||ID @TC= 100°C|Continuous Drain Current,VGS @10V||121||A|
||IDM|Pulsed Drain Current||700|||
||PD @TC= 25°C|Maximum Power Dissipation||230||W|
|||Linear DeratingFactor||1.5||W/°C|
||VGS|Gate-to-Source Voltage||± 20||V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|-55  to + 175||°C|
|||Soldering Temperature, for 10 seconds (1.6mm from case)||300|||
|||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||||
||**Avalanche Characteristics**||||||
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>250<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>554<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>~~—SS=EEu—~~|||||||
||**Thermal Resistance**||||||
||**Symbol**|**Parameter**|**Typ.**||**Max.**|**Units**|
||RJC|Junction-to-Case|–––||0.66||
||RCS|Case-to-Sink,Flat Greased Surface|0.24||–––|°C/W|
||RJA|Junction-to-Ambient<br>–––|||40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|40|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.75|3.30|m|VGS= 10V,ID= 100A|
|||–––|3.50|–––||VGS=6.0V,ID=50A|
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V|VDS =VGS, ID =150µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS=60V,VGS=0V|
|||–––|–––|150||VDS =60V,VGS =0V,TJ =125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|2.0|–––|||



## **Notes:** 

- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 50µH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1130A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V. 

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IRFP7537PbF ~~[7~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~a~~|**Typ. **<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|190<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S<br>~~a~~|VDS= 10V,ID=100A<br>~~a~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|142<br>~~a~~<br>~~a~~|210<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|ID= 100A<br>VDS= 30V<br>VGS= 10V<br>~~a~~<br>~~a~~|
|Qgs|Gate-to-Source Charge|–––|36|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|43<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|Qsync<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|99<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|15|–––|ns|VDD= 30V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>|–––<br>|105<br>|–––<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>|–––<br>|82<br>|–––<br>|||
|tf<br>~~So~~<br>~~ee~~|Fall Time<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|84<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~ee~~|Input Capacitance<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|7020<br>~~So~~|–––<br>~~So~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|640|–––|||
|Crss<br>~~ee~~<br>~~PR~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|395<br>|–––<br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~PR~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br>|665<br>|–––<br>||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~PRa~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~|880<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GO~~|||||||
|**Symbol**<br>~~eG~~|**Parameter **<br>~~eG~~|**Min.**<br>~~eG~~<br>~~GO~~|**Typ. **<br>~~eG~~<br>~~GO~~|**Max.**<br>~~eG~~<br>~~GO~~|**Units**<br>~~eG~~<br>~~GO~~|**Conditions**<br>~~eG~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|172<br>~~GO~~<br>~~fp~~|A<br>~~GO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|700<br>~~fp~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|10<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|V/ns T<br>~~a~~<br>~~a~~|V/ns TJ= 175°C,IS=100A,VDS= 60V<br>~~a~~<br>~~a~~|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|39<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|41<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|46<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|56<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~ee~~|Reverse Recovery Current<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|2.1<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~||



3 ~~—~~ 

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1é4R IRFP7537PbF<br>1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>——— 10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>100 5.5V 5.0V 5.5V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>100 4.5V<br>10<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 100AD = 100A= 100A<br>VGS = 10VGS = 10V= 10V<br>2.0<br>100<br>Ty T J  = 175°C°CC TJ = 25°CJ = 25°C= 25°C 1.6 OTe<br>10<br>1.2<br>1<br>0.8<br>VDS = 25VDS = 25V= 25V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 Ae) 0.4 EEE<br>2 3 4 5 6 7 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


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1000<br>ID = 100AD = 100A= 100A<br>VGS = 10VGS = 10V= 10V<br>2.0<br>100<br>Ty OTe<br>T J  = 175°C°CC TJ = 25°CJ = 25°C= 25°C 1.6<br>10<br>1.2<br>1<br>0.8<br>VDS = 25VDS = 25V= 25V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 Ae) 0.4 EEE<br>2 3 4 5 6 7 -60 -20 20 60 100 140<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 100A<br>12.0<br>C rss    = C gd  VDS= 48V<br>—] Coss  = Cds + Cgd 10.0 «FS V DS = 30V<br>10000 VDS= 12V<br>Ciss<br>8.0<br>C oss 6.0<br>1000 C rss<br>4.0<br>2.0<br>100 Bl ii, 0.0 4s<br>0.1 1 10 100 0 50 100 150<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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IRFP7537PbF ~~LLL~~ 

## ~~IsaR~~ 

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1000<br>TJ = 175°C<br>100<br>TJ = 25°C<br>10<br>1 ff<br>VGS = 0V<br>0.1<br>0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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78<br>Id = 1.0mA<br>76<br>| | | | dP<br>74<br>|| | |bt<br>72<br>pt] [te] |<br>EpA4nn<br>70<br>pYt<br>68<br>66<br>Z| | tt<br>64<br>pt} | | |tt| |<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>100µsec<br>100<br>1msec<br>OPERATION IN THIS AREA<br>10 LIMITED BY RDS(on)<br>10msec<br>1<br>Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>0.1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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5.1<br>VGS = 5.5V<br>VGS = 6.0V<br>4.6 VGS = 7.0V<br>VGS = 8.0V<br>VGS = 10V<br>4.1<br>3.6<br>Pe<br>3.1<br>fr<br>2.6<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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~~IeaR~~ 

IRFP7537PbF ~~[TT~~ 

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1<br>D = 0.50 TT | LmTet<br>0.20<br>0.1<br>Serr 0.10 |<br>tt ee<br>0.05<br>0.02<br>0.01 0.01<br>Soe all BN BU<br>SINGLE PULSE<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>i ufUte<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>EE<br>100<br>10<br>Bs i UN<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>ea<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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300<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>250 I D  = 100A<br>Tq<br>200<br>AN Soo<br>150<br>ENE EE<br>100<br>LIN NEE<br>50<br>LLIN<br>EE  ANN.<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

- 1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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~~TGR~~ 

IRFP7537PbF ~~lll~~ 

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4.5<br>4.0<br>TT EEE EL<br>3.5<br>PEEP<br>3.0<br>AERA<br>2.5<br>U| SS LPR<br>2.0 ID = 150µA<br>ID = 250µA<br>ID = 1.0mA<br>1.5<br>ID = 1.0A<br>1.0 ZaGRNNGPt LLL ING<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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12<br>IF = 60A<br>VR = 51V<br>9 T J = 25°C aes<br>TJ = 125°C ~<br>Bae<br>6<br>3<br>0 ry yy<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
15<br>IF = 100A<br>VR = 51V<br>12<br>TJ = 25°C<br>TJ = 125°C<br>A<br>9<br>Poe<br>6 ae ae<br>3<br>Cert<br>0 "Lt tb<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
225<br>IF = 60A<br>200<br>VR = 51V<br>175 T J = 25°C<br>TJ = 125°C<br>150 OEE<br>125 aoa<br>ee<br>100<br>75<br>eee<br>50<br>25 ATE<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
225<br>IF = 100A ToT<br>200<br>VR = 51V<br>175 T J = 25°C<br>TJ = 125°C<br>TTF<br>150<br>nea<br>125<br>ToT<br>100<br>eae<br>75<br>A TT<br>50<br>a<br>25<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs /, (th) : '|<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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**TO-247AC Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-247AC Part Marking Information** 

Notes: This part marking information applies to devices produced after 02/26/2001 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>i<br>**----- End of picture text -----**<br>


TO-247AC  package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-247|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/18/2014|<br>Updated EAS (L =1mH)= 554mJ  on page 2<br><br>Updated note 8  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 33A,VGS=10V”.  onpage 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 18, 2014 ~~= _~~ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP7537PBF/power-mosfet-n-channel-60-v-172-a-3300-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp7537pbf/mosfet-n-ch-60v-172a-to-247-3/dp/2406521)
---

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