# Power MOSFET, N Channel, 60 V, 195 A, 2000 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2406520/)

**URL**: https://novapart.co/products/IRFP7530PBF/power-mosfet-n-channel-60-v-195-a-2000-ohm-to
**SKU**: IRFP7530PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3200
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00165o; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 341W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 2000µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2406520/)

## ~~T@R Rectitier~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

|||||||Strong_IR_FET™<br>IRFP7530PbF<br>~~po~~|
|---|---|---|---|---|---|---|
|||||||HEXFET®Power MOSFET|
|D<br>S<br>G<br>**VDSS**<br>**60V**<br>**RDS(on)typ.**<br>**1.65m**<br>**max**<br>**2.00m**<br>**ID (Silicon Limited)**<br>**281A**<br>**ID (Package Limited)**<br>**195A**<br>~~==~~|||||||
|||||||TO-247<br>IRFP7530PbF<br>GD S|
||||**G**|||**D**<br>**S**|
|||Gate||||Drain<br>Source|



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HEXFET [® ] Power MOSFET<br>**----- End of picture text -----**<br>


|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFP7530PbF|TO-247|Tube|25|IRFP7530PbF|



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7<br>ID = 100A<br>6<br>UME EE<br>5 ULE EEL<br>4 UL EEE  EL<br>TJ = 125°C<br>3 INE<br>TJ = 25°C<br>2 SINTEEPE EE fd<br>1<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

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300<br>250 Limited by package<br>Phe<br>200 OK,<br>150 TEEN<br>100 LL<br>TIN<br>50 P i;T |LING<br>0 PEt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 ~~—~~ 

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IRFP7530PbF 

## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**|||||**Max.**||||**Units**||
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|||||281||||||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)|||||199<br>195||||A||
|IDM<br>Pulsed Drain Current|||||760||||||
|PD @TC= 25°C<br>Maximum Power Dissipation|||||341||||W||
|Linear DeratingFactor|||||2.3||||W/°C||
|VGS<br>Gate-to-Source Voltage|||||± 20||||V||
|TJ<br>TSTG<br>Operating Junction and<br>StorageTemperatureRange|||||-55  to + 175||||°C||
|SolderingTemperature,for 10 seconds (1.6mm fromcase)|||||300||||||
|MountingTorque, 6-32 or M3 Screw|||||10 lbf·in(1.1 N·m)||||||
|**Avalanche Characteristics**|||||||||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>557<br>mJ<br>EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>1102<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br> **Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>~~——— =~~|||||||||||
|RJC<br>Junction-to-Case|||||–––||0.44||||
|RCS<br>Case-to-Sink,Flat Greased Surface|||||0.24||–––||°C/W||
|RJA<br>Junction-to-Ambient<br>–––|||||||40||||
|**Static @ TJ = 25°C (unless otherwise specified)**|||||||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**||**Conditions**||||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|60|–––|–––||V<br>VGS= 0V,ID= 250µA||||||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|47|–––|mV/°C Reference to 25°C|||mV/°C Reference to 25°C,ID= 1mA||= 1mA||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>1.65<br>2.00<br>VGS= 10V,ID= 100A<br>–––<br>2.10<br>–––<br>VGS=6.0V,ID=50A<br>VGS(th)<br>Gate Threshold Voltage<br>2.1<br>–––<br>3.7<br>V<br>VDS =VGS, ID =250µA<br>m|||||||||||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150||µA<br>VDS=60V,VGS=0V<br>VDS =60V,VGS =0V,TJ =125°C||||||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-SourceReverseLeakage|–––<br>–––|–––<br>–––|100<br>-100||nA<br>VGS= 20V<br>VGS= -20V||V||||
|RG<br>Gate Resistance|–––|2.1|–––||||||||



## **Notes:** 

- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 111µH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1338A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 47A, VGS =10V. 

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IRFP7530PbF ~~LT~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~a~~|**Typ. **<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|242<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S<br>~~a~~|VDS= 10V,ID=100A<br>~~a~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|274<br>~~a~~<br>~~a~~|411<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|ID= 100A<br>VDS= 30V<br>VGS= 10V<br>~~a~~<br>~~a~~|
|Qgs|Gate-to-Source Charge|–––|64|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|83<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|Qsync<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|191<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|52|–––|ns|VDD= 30V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>|–––<br>|141<br>|–––<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>|–––<br>|172<br>|–––<br>|||
|tf<br>~~So~~<br>~~ee~~|Fall Time<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|104<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~ee~~|Input Capacitance<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|13703<br>~~So~~|–––<br>~~So~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|1266|–––|||
|Crss<br>~~ee~~<br>~~PR~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|806<br>|–––<br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~PR~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br>|1267<br>|–––<br>||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~PRa~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~|1630<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GO~~|||||||
|**Symbol**<br>~~eG~~|**Parameter **<br>~~eG~~|**Min.**<br>~~eG~~<br>~~GO~~|**Typ. **<br>~~eG~~<br>~~GO~~|**Max.**<br>~~eG~~<br>~~GO~~|**Units**<br>~~eG~~<br>~~GO~~|**Conditions**<br>~~eG~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|281<br>~~GO~~<br>~~fp~~|A<br>~~GO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|760<br>~~fp~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|8.1<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|V/ns T<br>~~a~~<br>~~a~~|V/ns TJ= 175°C,IS=100A,VDS= 60V<br>~~a~~<br>~~a~~|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|51<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|54<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|86<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|102<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~ee~~|Reverse Recovery Current<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|2.9<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~||



3 ~~—~~ 

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IRFP7530PbF<br>TOR<br>1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>100<br>4.5V<br>10<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH<br>60µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 100AD = 100A= 100A<br>VGS = 10VGS = 10V= 10V<br>2.0<br>100<br>Tt T J  = 175°C TJ = 25°C oF 1.6 A<br>10<br>1.2<br>1 E50 [<br>Vi Ee2nnn<br>0.8<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 Ade t 0.4 PTE<br>2 3 4 5 6 7<br>-60 -20 20 60 100 140 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>4.5V<br>100<br>60µs PULSE WIDTH60µs PULSE WIDTHPULSE WIDTH<br>Tj = 175°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>2.4<br>ID = 100AD = 100A= 100A<br>VGS = 10VGS = 10V= 10V<br>2.0<br>oF 1.6 A<br>1.2<br>[<br>Ee2nnn<br>0.8<br>0.4 PTE<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>Fig 6.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID = 100A<br>12.0<br>VDS= 48V<br>10.0 Py V DS = 30V<br>VDS= 12V<br>8.0<br>6.0 aaa Ae<br>4.0<br>2.0 a="TA | i 7500td ed<br>0.0 ASSSGne<br>0 50 100 150 200 250 300 350<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Transfer Characteristics 

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1000000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C rss    = C gd<br>100000 To} C oss   = C ds  + C gd<br>C iss<br>10000<br>BH 0A)<br>Coss<br>C rss<br>Sse TI<br>1000<br>Bilinear Sal<br>ETT<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 4 www.irf.com © 2014 International Rectifier ~~=~~ 

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IRFP7530PbF ~~Ld~~ 

## ~~IeaR~~ 

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1000<br>1000<br>100µsec<br>TJ = 175°C a ee eee ee<br>100<br>100<br>Limited by Package<br>10 ia TJ = 25°C et OPERATION IN THIS AREA  1 m sec<br>10 LIMITED BY RDS(on)<br>10msec<br>1 1<br>free ‘cae Tc = 25°C DC<br>VGS = 0V Tj = 175 ° C<br>Single Pulse<br>0.1 ech 0.1 tN<br>0.1 0.4 0.7 1.0 1.3 1.6 1.9 0.1 1 10<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>80 2.0<br>Id = 1.0mA<br>1.8<br>77 1.6<br>1.4<br>74 1.2<br>1.0<br>71 0.8<br>0.6<br>68 0.4<br>0.2<br>65 0.0<br>-60 -20 20 60 100 140 180 0 10 20 30 40 50 60<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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10<br>VGS = 5.5V<br>9 VGS = 6.0V | tf |<br>VGS = 7.0V<br>8 VGS = 8.0V SK<br>VGS = 10V<br>7 SANFL<br>6<br>5 Pt PSSA LC<br>4<br>PANG<br>3<br>2<br>a ee<br>1 ee<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

5 ~~—~~ 

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1<br>UE ee<br>D = 0.50<br>0.1<br>0.20<br>H-TreeTTT<br>0.10<br>0.05<br>0.01 0.02<br>| meer TT il<br>0.01<br>0.001 a | PAT SINGLE PULSE AE<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 CEU 1E-005 LA 0.0001 EA 0.001 E12 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>a<br>100 TS hoon<br>BE ni St Se |<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>S| Batiiaeee<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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600<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>500 I D  = 100A<br>qq<br>400<br>WN Sep<br>300<br>DYNSUHEEEEEE<br>200<br>ULENNITE<br>100<br>PSST<br>LTT SS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRFP7530PbF<br>ET<br>TOR. ake<br>4.5 20<br>IF = 60A<br>4.0 VR = 51V<br>TTI T  TTT 15 T J = 25°C ae<br>3.5 PERE TJ = 125°C<br>3.0<br>CBSSCSSELE Se<br>10<br>2.5<br>TTS A<br>2.0 ID = 250µA<br>ID = 1.0mA 5<br>ID = 1.0A<br>TERT La |<br>1.5<br>PTL ZEGEANN Care<br>1.0 ELELELRN 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>IF = 100A<br>VR = 51V<br>15 T J = 25°C ae<br>TJ = 125°C<br>10 | Let<br>pots<br>eae<br>5<br>0 vt} ] fe<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
450<br>IF = 60A<br>400<br>VR = 51V<br>350 T J = 25°C ToeToT<br>TJ = 125°C<br>300<br>250 TZ<br>200 ne al<br>150 Tet<br>100<br>50 TTIETT OT<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
400<br>IF = 100A<br>P|<br>350 V R  = 51V<br>TJ = 25°C<br>300 T  = 125°C Ft oeft<br>J<br>250 TZ<br>200<br>ae<br>nmea<br>150<br>Bann<br>100<br>50 ot| ff<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs /, (th) !: |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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**TO-247AC Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-247AC Part Marking Information** 

Notes: This part marking information applies to devices produced after 02/26/2001 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>DATE CODE<br>ASSEMBLY ] YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC  package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**<br>**RoHS Compliant**|TO-247|N/A|
||Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/7/2014|<br>Updated EAS (L =1mH)= 1102mJ  on page 2<br><br>Updated note 9  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 47A,VGS=10V”.  onpage 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ © 2014 International Rectifier Submit Datasheet Feedback                  November 7, 2014                   November 7, 2014 ~~_~~ 

10 www.irf.com ~~=~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP7530PBF/power-mosfet-n-channel-60-v-195-a-2000-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp7530pbf/mosfet-n-ch-60v-195a-to-247-3/dp/2406520)
---

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