# Power MOSFET, N Channel, 250 V, 56 A, 0.0175 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:1698287/)

**URL**: https://novapart.co/products/IRFP4768PBF/power-mosfet-n-channel-250-v-56-a-00175-ohm-to
**SKU**: IRFP4768PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6400
**Stock**: 10+
**Lead Time**: 28 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 520W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 0.0175ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1698287/)

## IRFP4768PbF 

## **Application** 

- High Efficiency Synchronous Rectification in SMPS 

- Uninterruptible Power Supply 

- High Speed Power Switching 

- Hard Switched and High Frequency Circuits 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

HEXFET[® ] Power MOSFET D **VDSS 250V RDS(on) typ. 14.5m**  G **max 17.5m**  **ID 93A** S ~~==~~ D S G[D ] TO-247AC 

||**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~es~~|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~es~~|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~es~~|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~es~~||
|---|---|---|---|---|---|
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>IRFP4768PbF<br>TO-247AC<br>Tube<br>25<br>IRFP4768PbF<br>**Orderable Part Number**<br>~~pf~~||||||
|**Parameter**||||**Max.**<br>**Units**||
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V||||93||
|ID @TC= 100°C<br>Continuous Drain Current, VGS @10V||||A<br>66||
|IDM<br>Pulsed Drain Current||||370||
|PD @TC= 25°C<br>Maximum Power Dissipation||||520<br>W||
|Linear DeratingFactor||||3.4<br>W/°C||
|VGS<br>Gate-to-Source Voltage||||± 20<br>V||
|dv/dt<br>Peak Diode Recoverydv/dt||||24<br>V/ns||
|TJ<br>TSTG<br>Operating Junction and<br>StorageTemperatureRange<br>Soldering Temperature, for 10 seconds<br>(1.6mm from case)||||-55  to + 175<br>°C<br>300||
|Mounting Torque, 6-32 or M3 Screw||||10 lbf·in (1.1 N·m)||
|**Avalanche Characteristics**||||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>770<br>mJ<br>IAR<br>Avalanche Current <br>See Fig. 14, 15, 22a, 22b<br>A<br>EAR<br>RepetitiveAvalancheEnergy <br>mJ<br>~~Ss~~||||||
|**Thermal Resistance**||||||
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.29<br>°C/W<br>RCS<br>Case-to-Sink,Flat Greased Surface<br>0.24<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>40<br>~~——————~~<br>~~ae~~||||||
|1<br>2016-12-12<br>~~ee~~||||||



~~Cinfineon~~ 

IRFP4768PbF ~~LLL~~ 

## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>250<br>–––<br>–––<br>V<br>VGS =0V, ID =250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.20<br>––– V/°C Reference to 25°C,ID= 5mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>14.5<br>17.5<br>mVGS= 10V,ID= 56A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µAVDS =250 V, VGS =0V<br>–––<br>–––<br>250<br>VDS= 250V,VGS= 0V,TJ=125°C<br>IGSS <br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100 nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Gate Resistance<br>–––<br>0.71<br>–––<br><br>~~a es~~<br>~~rs rsQO~~<br>~~eeDn~~<br>~~QO~~<br>~~LE~~<br>~~—~~<br>~~eeee~~<br>~~4~~<br>~~PC~~<br>~~BP~~<br>~~se~~<br>~~Oi~~<br>~~Pf~~|
|---|
|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|
|gfs<br>Forward Transconductance<br>100<br>–––<br>–––<br>S<br>VDS= 50V,ID=56A<br>Qg<br>Total Gate Charge<br>–––<br>180<br>270<br>nC<br>ID= 56A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>52<br>–––<br>VDS= 125V<br>Qgd<br>Gate-to-DrainCharge<br>–––<br>72<br>–––<br>VGS= 10V<br>Qsync<br>Total Gate Charge Sync.(Qg-Qgd)<br>–––<br>108<br>–––<br>~~a ns~~<br>~~(~~<br>~~eees[oo~~<br>~~**a**ees~~|
|td(on)<br>Turn-On DelayTime<br>–––<br>36<br>–––<br>ns<br>VDD= 163V<br>tr<br>RiseTime<br>–––<br>160<br>–––<br>ID= 56A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>57<br>–––<br>RG= 1.0<br>tf<br>Fall Time<br>–––<br>110<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>––– 10880 –––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>700<br>–––<br>VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>210<br>–––<br>ƒ= 1.0MHz, See Fig. 5<br>Coss eff.(ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>510<br>–––<br>VGS= 0V,VDS = 0V to 200V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>830<br>–––<br>VGS= 0V,VDS = 0V to 200V<br>~~eees~~<br>~~eees~~<br>~~es~~<br>~~ee~~~~**es**~~<br>~~ae~~<br>~~es es~~<br>~~ee~~<br>~~Co~~<br>7<br>~~**ee**I~~<br>~~I~~<br>~~ree~~<br>~~I~~<br>~~(OO fr~~|
|**Diode Characteristics**|
|D<br>S<br>G<br>**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>93<br>A<br>MOSFET symbol<br>(Body Diode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>370<br>integral reverse<br>(BodyDiode)<br>p-njunctiondiode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 56A,VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>180<br>–––<br>nsTJ =25°CVDD= 200V<br>–––<br>200<br>–––<br>TJ =125°CIF= 56A,<br>Qrr<br>Reverse Recovery Charge<br>–––<br>1480<br>–––<br>nCTJ =25°Cdi/dt = 100A/µs<br>–––<br>2260<br>–––<br>TJ =125°C <br>IRRM<br>ReverseRecovery Current<br>–––<br>16<br>–––<br>A<br>TJ= 25°C<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~es~~<br>~~rs I~~<br>~~sD~~<br>~~|~~<br>~~&~~<br>~~ee~~<br>~~nn nn~~<br>~~a ee eee~~<br>~~Pf~~<br>~~a~~<br>~~ee eee~~<br>~~Pf |~~<br>~~a~~<br>~~es es ss~~<br>~~a~~<br>~~es~~|



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Limited by TJmax starting TJ = 25°C, L = 0.50mH, RG = 25, IAS = 56A, VGS =10V. Part not recommended for use above this value. 

-  ISD 56A, di/dt 950A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C 

 RJC value shown is at time zero. 

2 2016-12-12 ~~re~~ 

2016-12-12 

IRFP4768PbF ~~a~~ 

## ~~Cinfin eon~~ 

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1000<br>VGS<br>TOP           15V<br>10V<br>100 8.0V 7.0V<br>6.0V<br>5.5V<br>4.8V<br>10 | BOTTOM 4.5V<br>1<br>0.1<br>60µs PULSE WIDTH<br>4.5V<br>Tj = 25°C<br>0.01<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 4.8V<br>BOTTOM 4.5V<br>L-<br>10<br>4.5V<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

## **Fig 2.** Typical Output Characteristics 

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3.5<br>1000<br>ID = 56A<br>3.0 VGS = 10V<br>100 eT | LA Hit Y<br>2.5<br>2.0<br>10 TJ = 175°C T J  = 25°C<br>1.5<br>1.0<br>1 HA LEE<br>VDS = 50V 0.5<br>60µs PULSE WIDTH<br>0.1 ffl 0.0 TECCELEELEEEE:<br>3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140160 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>100000<br>VGS   = 0V,       f = 1 MHZ ID= 56A<br>Ciss    = C gs + Cgd,  C ds SHORTED 12.0 aa V DS = 200V Bae<br>C rss    = C gd  VDS= 125V<br>Coss   = Cds + Cgd 10.0 V DS = 50V<br>10000 C iss<br>8.0<br>= EL ll | | YY |_|<br>Coss<br>6.0<br>Crss<br>1000 4.0<br>lll i sane<br>2.0<br>0.0<br>100<br>NER) | 0 ZEEE 30 60 90 120 150 180 210 240<br>1 10 100 1000<br> QG,  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Drain-to-Source Voltage  Fig 6.   Typical Gate Charge vs. Gate-to-Source Voltage<br>3  2016-12-12<br>SS<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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      IRFP4768PbF<br>Girooen<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 TJ = 175°C 100µsec<br>100<br>1msec<br>10 T J  = 25°C<br>10msec<br>10<br>DC<br>1 ff ann<br>Tc = 25 ° C<br>VGS = 0V Tj = 175Single Pulse°C<br>0.1 1<br>0.0 0.5 1.0 1.5 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>100 320<br>Id = 5mA<br>80<br>300<br>Ne TTL<br>60<br>PEN TAT<br>280<br>40<br>SEEN LUPAUnnA<br>260<br>20<br>AL TTT<br>240<br>0 et |tty -60 -40 -20 0 20 40 60 80 100 120 140160 180<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Case Temperature  Fig 10.   Drain-to–Source Breakdown Voltage<br>20.0<br>3200<br>18.0 ID<br>WER<br>2800 TOP         12A<br>16.0<br>17A<br>14.0 2400 BOTTOM 56A<br>12.0 2000 oePALL EEL<br>10.0<br>1600 PINEEE LE E LL<br>8.0<br>NENG<br>1200<br>6.0<br>4.0 800 ENNOEE EL<br>2.0<br>400<br>0.0<br>-50 0 50 100 150 200 250 300 0 eeee<br>25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)<br>Energy (µJ)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Coss Stored Energy 

**Fig 12.** Maximum Avalanche Energy vs. Drain Current 

4 ~~ee~~ 

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~~Cinfineon~~ 

IRFP4768PbF ~~LLL~~ 

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1<br>UL To<br>D = 0.50<br>0.1<br>0.20<br>a 0.10 a a<br>0.01 0.05 R1 R1 R2 R2 R3 R3 Ri (°C/W)  I (sec)<br>0.020.01 J  J 1  1  2  2  3  3 CC 0.0634 0.1109  0.000278 0.005836<br>Ci= iRi<br>0.001 Ci= iRi 0.1148  0.053606<br>nimtlw ===<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>A EET<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>100 pulsewidth, tav, assuming  Tj  = 150°C and<br>Tstart =25°C (Single Pulse)<br>wl 0.01 Miu}  Ll<br>10 ie 0.05  line Ali<br>0.10<br>ee77HeeeeeSill<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 150°C.<br>SS<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs. Pulse<br>800<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>(For further info, see AN-1005 at www.irf.com)<br>700 BOTTOM   1.0% Duty Cycle<br>1. Avalanche failures assumption:<br>ID = 56A<br>Purely a thermal phenomenon and failure occurs at a temperature far<br>600<br>NO in excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. jmax is not exceeded.  is not exceeded.<br>500 BNENEEEeeeee 3. Equation below based on circuit and waveforms shown in Figures 22a,22b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>400 PLINN EEE ET 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>during avalanche).<br>300 PLE EANEEE 6.  Iav = Allowable avalanche current.<br>7.   T =  Allowable rise in junction temperature, not to exceed Tjmax T =  Allowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>200 25°C in Figure 14, 15).<br>PET TT NATETT tav = Average time in avalanche. av = Average time in avalanche.  = Average time in avalanche.<br>PEIN D = Duty cycle in avalanche =  tav ·f av ·f  ·f<br>100 TE<br>PTET ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>0 TET EES PD (ave) = 1/2 ( 1.3·BV·Iav) =   T/ ZthJC<br>25 50 75 100 125 150 175<br>Iav = 2av = 2 = 2  T/ [1.3·BV·Zth] th] ]<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. jmax is not exceeded.  is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 22a,22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T =  Allowable rise in junction temperature, not to exceed Tjmax T =  Allowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. av = Average time in avalanche.  = Average time in avalanche. D = Duty cycle in avalanche =  tav ·f av ·f  ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

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Iav = 2av = 2 = 2  T/ [1.3·BV·Zth] th] ]<br>EAS (AR) = PD (ave)·tav<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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IRFP4768PbF ~~LLL~~ 

## ~~Cinfin eon~~ 

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**----- Start of picture text -----**<br>
6.0<br>5.0<br>pest ttt<br>4.0<br>PSs fret<br>3.0<br>ID = 250µA<br>aeNGEE<br>I D  = 1.0mA<br>2.0 I D  = 1.0A -LEANA<br>1.0 TETLLLLLDTE LNI<br>0.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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70<br>IF = 37A<br>60 V R = 200V<br>TJ = 25°C fe<br>50 T J = 125°C<br>mew<br>40<br>|_|<br>30 |<br>20 ytay| |<br>10 7A | | [|<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
90<br>IF = 56A<br>80<br>VR = 200V<br>70 T J = 25°C<br>TJ = 125°C<br>60 T EI<br>50<br>| yan<br>40 7<br>30 TRA<br>20<br>10 TT To<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
6000<br>IF = 37A<br>VR = 200V<br>5000<br>TJ = 25°C<br>TJ = 125°C<br>4000 | |eea<br>3000<br>ere<br>A LA<br>Bacar<br>2000<br>1000<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
8000<br>IF = 56A<br>7000 V R  = 200V P| |.<br>TJ = 25°C<br>Set<br>6000<br>5000 TJ = 125°C Se|<br>4000 P|er<br>3000<br>a<br>2000 Eeanl<br>Zea<br>1000<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Stored Charge vs. dif/dt 

6 

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IRFP4768PbF ~~a~~ 

**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 23a.** Switching Time Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 23b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

7 

2016-12-12 

~~Cinfineon~~ 

IRFP4768PbF ~~LLL~~ 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

**==> picture [454 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL DO<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>20 56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

2016-12-12 

|<br>IRFP4768PbF<br>**Qualification Information**<br>infineon~~OOO~~|<br>IRFP4768PbF<br>**Qualification Information**<br>infineon~~OOO~~|<br>IRFP4768PbF<br>**Qualification Information**<br>infineon~~OOO~~|<br>IRFP4768PbF<br>**Qualification Information**<br>infineon~~OOO~~|
|---|---|---|---|
|||Industrial||
|**Qualification Level**||(per JEDEC JESD47F)†||
|**Moisture Sensitivity Level**|TO-247AC|N/A||
|**RoHS Compliant**||Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Changed datasheet with Infineon logo-all pages|
|12/12/2016||Corrected error on  figure 9 on page 4.|
|||Added disclaimer on last page.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

9 2016-12-12 ~~ee~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP4768PBF/power-mosfet-n-channel-250-v-56-a-00175-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp4768pbf/mosfet-n-ch-250v-93a-to247/dp/1698287)
---

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