# Power MOSFET, N Channel, 100 V, 120 A, 4800 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:1602245/)

**URL**: https://novapart.co/products/IRFP4310ZPBF/power-mosfet-n-channel-100-v-120-a-4800-ohm-to
**SKU**: IRFP4310ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8260
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipat

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 280W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 20V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 4800µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1602245/)

HEXFET ® Power MOSFET 

## IRFP4310ZPbF 

> **Applications** ; High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply : High Speed Power Switching Hard Switched and High Frequency Circuits 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

||||||HEXFET<br>Power MOSFET<br>®|HEXFET<br>Power MOSFET<br>®|HEXFET<br>Power MOSFET<br>®|HEXFET<br>Power MOSFET<br>®|
|---|---|---|---|---|---|---|---|---|
|||D|||**VDSS**<br>**100V**<br>**RDS(on)   typ.**<br>**4.8m**<br>**max.**<br>**6.0m**<br>~~ee~~<br>~~ee~~<br>~~oS~~||||
|G||S|||**ID (Silicon Limited)**<br>**ID (Package Limited)**<br>~~a~~|||**134A**<br>**120A**|
||||||D||||
||||||S<br>D||||
||||||G||||
||||||**TO-247AC**||||
||||||||||
||**G**||||**D**|||**S**|
|Gate|||||Drain|||Source|



## **Absolute Maximum Ratings** 

|**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>A<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>**Max.**<br>134<br>95<br>560<br>120<br>280<br>18<br>± 20<br>1.9<br>~~a~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~>~~<br>~~a GO~~<br>~~esGO~~<br>~~esGO~~<br>~~Pf~~<br>~~Oe~~|
|---|
|TJ<br>Operating Junction and<br>°C<br>-55  to + 175|
|TSTG<br>Storage Temperature Range|
|Soldering Temperature, for 10 seconds<br>300|
|(1.6mm from case)|
|Mountingtorque,6-32 or M3 screw<br>10lb in(1.1N m)<br>~~a (OO~~|
|**Avalanche Characteristics**|
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br>130<br>See Fig. 14, 15, 22a, 22b,<br>~~esGO~~<br>~~——— ee~~<br>~~eee~~<br>~~PlOe~~<br>~~rd~~|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RθJC<br>Junction-to-Case<br>–––<br>0.54<br>RθCS<br>Case-to-Sink,Flat Greased Surface<br>0.24<br>–––<br>°C/W<br>RθJA<br>Junction-to-Ambient<br>–––<br>40<br>~~es~~<br>~~>en~~<br>~~a A~~<br>~~es >~~|
|www.irf.com<br>1|



3/8/08 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.11<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>4.8<br>6.0<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG<br>Internal Gate Resistance<br>–––<br>0.7<br>–––<br>Ω<br>VGS= 20V<br>VGS= -20V<br>**Conditions**<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 5mA<br>VGS= 10V,ID= 75A<br>VDS= VGS,ID= 150μA<br>VDS= 100V,VGS= 0V<br>VDS= 80V,VGS= 0V,TJ= 125°C<br>~~a DG OO~~<br>~~a~~<br>~~GnGO~~<br>~~a RG~~<br>~~OQ~~<br>~~a~~<br>~~Gn OQ~~<br>~~©~~<br>~~a DG DO~~<br>~~i~~<br>~~a~~<br>~~De~~<br>~~_——————————_———eEE~~<br>~~QOGs~~<br>~~a GG~~||
|**Dynamic @ TJ = 25°C(unless otherwise specified)**||
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>150<br>–––<br>–––<br>S<br>**Conditions**<br>VDS= 50V,ID= 75A<br>~~a DG OO~~<br>~~a~~<br>~~GnCO~~||
|Qg<br>Total Gate Charge<br>–––<br>120<br>170<br>nC<br>ID= 75A<br>~~a~~||
|Qgs<br>Gate-to-Source Charge<br>–––<br>29<br>–––<br>VDS=50V<br>~~a De~~||
|Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>35<br>VGS= 10V<br>~~a®~~|~~®~~|
|Qsync<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>85<br>–––<br>ID= 75A,VDS=0V,VGS= 10V<br>~~a~~<br>~~DG CeO~~||
|td(on)<br>Turn-On DelayTime<br>–––<br>20<br>–––<br>ns<br>VDD= 65V<br>~~a~~||
|tr<br>Rise Time<br>–––<br>60<br>–––<br>ID= 75A<br>~~a~~||
|td(off)<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>RG= 2.7Ω<br>~~a~~||
|tf<br>Fall Time<br>–––<br>57<br>–––<br>VGS= 10V<br>~~a~~<br>®||
|Ciss<br>Input Capacitance<br>–––<br>6860<br>–––<br>pF<br>VGS= 0V<br>~~a~~||
|Coss<br>Output Capacitance<br>–––<br>490<br>–––<br>VDS= 50V<br>~~a~~||
|Crss<br>Reverse Transfer Capacitance<br>–––<br>220<br>–––<br>ƒ= 1.0MHz,See Fig. 5<br>~~a~~||
|Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)–––<br>570<br>–––<br>VGS= 0V,VDS= 0V to 80V<br>,See Fig. 11<br>~~a~~||
|Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>920<br>–––<br>VGS= 0V,VDS= 0V to 80V<br>~~a >)~~||
|**Diode Characteristics**||
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|S<br>D<br>G<br>IS<br>Continuous Source Current<br>–––<br>–––<br>134<br>A<br>(Body Diode)<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>560<br>A<br>(Body Diode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse Recovery Time<br>–––<br>40<br>ns<br>TJ= 25°C<br>VR= 85V,<br>–––<br>49<br>TJ= 125°C<br>IF= 75A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>58<br>nC<br>TJ= 25°C<br>di/dt = 100A/μs<br>–––<br>89<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>2.5<br>–––<br>A<br>TJ= 25°C<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>MOSFET symbol<br>showing  the<br>TJ= 25°C,IS= 75A,VGS= 0V<br>integral reverse<br>p-n junction diode.<br>~~ee~~<br>~~ee~~<br>~~ooo~~<br>~~GO~~<br>~~CO~~<br>~~>~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~a~~||



Notes: ~~®®~~ Calculated continuous current based on maximum allowable junction Pulse width ≤ 400μs; duty cycle ≤ 2%. temperature. Bond wire current limit is 120A. Note that current © Coss eff. (TR) is a fixed capacitance that gives the same charging timeoss eff. (TR) is a fixed capacitance that gives the same charging time eff. (TR) is a fixed capacitance that gives the same charging time limitations arising from heating of the device leads may occur with as Coss while VDS is rising from 0 to 80% VDSS. some lead mounting arrangements. @ Coss eff. (ER) is a fixed capacitance that gives the same energy asoss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as 

- © Coss eff. (TR) is a fixed capacitance that gives the same charging timeoss eff. (TR) is a fixed capacitance that gives the same charging time eff. (TR) is a fixed capacitance that gives the same charging time 

@ Coss eff. (ER) is a fixed capacitance that gives the same energy asoss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as 

) Repetitive rating;  pulse width limited by max. junction temperature. 

Coss while VDS is rising from 0 to 80% VDSS. 

θ 

© Limited by TJmax, starting TJ = 25°C, L = 0.047mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above the Eas value and test conditions. 

> ISD ≤ 75A, di/dt ≤ 600A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

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1000 1000<br>VGS o_o VGS TT<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V Ai | 8.0V )<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V4.8V Sins Sime 5.0V4.8V yAPetLI<br>BOTTOM 4.5V BOTTOM 4.5V<br>a 100 AT<br>10 4.5V<br>ee Th Bi) aati |<br>4.5V<br>Seri eee ea) Biri<br>ao | ee | yy)<br>≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 EN | 10 ‘i<br>ait ane 7 aeT<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.5<br>ID = 75A<br>VGS = 10V<br>100 Te) 2.0 «=O<br>| TJ = 175°C | 711 /<br>10 oe oo 1.5 Y<br>fe /eee Za<br>rT ATP TJ = 25°C yy<br>LPP Pf yZ<br>1<br>ptf tf | | | 1.0 AO<br>| A<br>VDS = 50V<br>≤ 60μs PULSE WIDTH<br>fp Bg<br>0.1<br>0.5<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>Fig 3.   Typical Transfer Characteristics<br>12000 20<br>VGS   = 0V,       f = 1 MHZ ID= 75A<br>10000 a C C iss  rss     = C  = C gs  gd  + Cgd,  Cds SHORTED 16 ee VVDS= 50VDS= 80V ee ee<br>Coss  = Cds + Cgd VDS= 20V<br>8000 eee — ae<br>Ciss 12<br>6000 itionHae p ajo<br>8<br>4000 TIE sf<br>| EAI 4 fo—<br>Coss<br>2000 / 4<br>Tt Crss HI Hy | |ft<br>oo 0 a<br>0<br>0 40 80 a 120 160 200<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>P TJ  t = 175°C ee<br>100<br>po i rT | |<br>10 TJ = 25°C<br>LAR or eee<br>1<br>pfAif | | | | |<br>VGS = 0V<br>0.1 (ore<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


VSD, Source-to-Drain Voltage (V) **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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140<br>LIMITED BY PACKAGE<br>120<br>Pe<br>100<br>PTS<br>80<br>pti<br>60<br>ee TINCT<br>40<br>HOTT<br>Po<br>20<br>0<br>CEE CrIN<br>25 50 75 100 125 150 175<br> TC,  Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

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3.0<br>2.5<br>2.0 Sfft | | ft | IZly<br>1.5 | | | A<br>1.0 | | ¥ {|<br>0.5<br>4mm<br>0.0 eT | | |<br>0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>pes<br>SSF cite<br>100 1m sec 10 0μsec<br>1 0m sec<br>10<br>BispoS tabe<br>1 pi as<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse DC<br>0.1 | TAN<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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130<br>ID = 5mA<br>120 EEL<br>ae<br>EL AT<br>110<br>Ar<br>100 ATLL<br>,<br>90 LEELA<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>600<br>                 I D<br>TOP          11A<br>500<br>                19A<br>BOTTOM   75A<br>400 SoNan<br>ff<br>300 FN Ef<br>200 NINE<br>100<br>| |<br>SBA<br>0 S| | NE<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1 ee eeeG<br>PoP EEE<br>D = 0.50 Glanil<br>0.1 0.20 aeLil<br>0.10<br>0.05 RR11 RR11 RR22 RR22 RR33 RR33 RR44RR44 Ri Ri ((°C/W°C/W)) τι  τι  ( (sec) sec)<br>0.01 0.02 0.01 ττJJττJJττ11ττ11 ττ22ττ22 ττ33ττ33 ττ44ττ44 ττCCττ 0.1434820.2886530.0187560.159425 0.320725 0.01688 0.0001170.0018170.0000070.0003730.000734 0.005665<br>Ci= Ci= CiCiττii//RiRiii//RiRi 0.0911530.101282 0.0117350.115865<br>| PT [ta<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>a ts<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>SS Duty Cycle = Single Pulse pulsewidth, tav, assuming  ey ΔTj = 150°C and<br>Tstart =25°C (Single Pulse)<br>Su)<br>0.01<br>PPAR TINN Hl<br>10 RRSC 0.05 SUESEATTTTSh<br>TT 0.10 aa iets, ffs Seer<br>1 BealpL Allowed avalanche Current vs avalanche  iea/janaisSe dllt eem O00<br>A pulsewidth, tav, assuming  A ΔΤ j = 25°C and  |=FSSTF I<br>Tstart = 150°C.<br>ITE rE<br>Toot<br>0.1 FL LH EET EEE EEE ET<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>140 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>120 BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 75A Purely a thermal phenomenon and failure occurs at a temperature far in<br>..<br>100 Ai iL excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.jmax is not exceeded. is not exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>80 NACEELE EEE EL 4. PD (ave) = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>60 during avalanche).<br>NYE EEE 6. Iav = Allowable avalanche current.<br>40 7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed asjmax (assumed as(assumed as<br>25°C in Figure 14).<br>BERNNEEEEEEE<br>tav = Average time in avalanche.<br>20 D = Duty cycle in avalanche =  tav ·f<br>COPS ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>i RRA<br>0<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav =av == 2 A T/ [1.3·BV·Zth]th]]<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.jmax is not exceeded. is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed asjmax (assumed as(assumed as 25°C in Figure 14). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav =av == 2** A **T/ [1.3·BV·Zth]th]] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.5<br>ID = 1.0A<br>4.0 I D  = 1.0mA<br>eT<br>ID = 250μA<br>3.5 ID = 150μA<br>BRE — ;<br>3.0<br>a<br>2.5<br>TAS<br>PEELE<br>2.0<br>SS<br>1.5<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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24<br>20<br>TTT<br>16 CCOCCERE<br>12 BRRDDeZan<br>Z|<br>8<br>BEPZann IF = 30A ie<br>VR = 85V<br>4 Pain<br>TJ = 125°C<br>TJ =  25°C<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage Vs. Temperature 

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24 600<br>20 500<br>¢<br>16 400<br>ett ee BERRRRELD<br>128 tt BEeZAnnae Bza eerpan 300200 EEREBZBERESZ|“¢ E AnnZAy<br>IF = 45A IF = 30A<br>@ VR = 85V VR = 85V<br>4 AL | | TJ = 125°C  100 tir TJ = 125°C  ||<br>TJ =  25°C TJ =  25°C<br>0 AH = 0 TTT<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs) dif / dt - (A / μs)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br>


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600<br>¢<br>BRREEEEDS<br>500 et ee 7 7<br>400<br>¢<br>ete<br>300<br>200 E ce<br>REREAD IF = 45A aa<br>VR = 85V<br>100 ES2ate<br>TJ = 125°C<br>TJ =  25°C<br>0<br>ri LI||<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


www.irf.com 

6 

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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {¢ P.W. — Period —— D = —— Period<br>) [®]    •  Circuit Layout Considerations i V | GS=10V<br> •<br>| 1] - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance @® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>o) ; 00 we VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re ( 4) •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test ee ae<br>CO) Isp controlled by Duty Factor "D" @® Ripple  ≤ 5% ISD<br>* Use P-Channel Driver for P-Channel Measurements *** \igg = 5V for Logic Level Devices<br>** Reverse Polarity for P-Channel<br>Fig 21.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>V(BR)DSS<br>15V + tp<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω IAS<br>Fig 22a.   Unclamped Inductive Test Circuit Fig 22b.   Unclamped Inductive Waveforms<br>Rp<br>V<br>Vos DS [—<br>90%<br>v :<br>v D.UT. | !<br>+<br>Re i f - 10%<br>‘ © Vpp /\<br>V<br>)t 10V GS Pi | moo<br>Pulse Width ≤ 1  — us Wy bole<br>Duty Factor ≤ 0.1 % td(on) tr td(off) tf<br>Fig 23a.   Switching Time Test Circuit Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K S Vgs(th)<br>a: Qgodr Qgd Qgs2 . Qgs1<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

**Fig 24a.** Gate Charge Test Circuit www.irf.com 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER 7 O€ IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>4 IOR 56           57 |<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>indicates "Lead-Free" LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC packages are not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 3/08 

www.irf.com 

8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP4310ZPBF/power-mosfet-n-channel-100-v-120-a-4800-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp4310zpbf/mosfet-n-to-247ac/dp/1602245)
---

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