# Power MOSFET, N Channel, 300 V, 38 A, 0.069 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2456712/)

**URL**: https://novapart.co/products/IRFP4137PBF/power-mosfet-n-channel-300-v-38-a-0069-ohm-to
**SKU**: IRFP4137PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0300
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 341W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 38A |
| Drain Source On State Resistance | 0.069ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456712/)

|International||||||||||
|---|---|---|---|---|---|---|---|---|---|
|~~TR Rectifier~~|||||||||IRFP4137PbF<br>~~pe~~|
|**Application**<br>High Efficiency Synchronous Rectification in SMPS<br>Uninterruptible Power Supply<br>High Speed Power Switching<br>Hard Switched and High Frequency Circuits<br>**Benefits**||HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**300V**<br>**RDS(on) typ.**<br>**56m**<br> **max**<br>**69m**<br>**ID**<br>**38A**<br>~~==~~||||||||
|Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness||||||||||
|Fully Characterized Capacitance and Avalanche SOA||||||||||
|Enhanced body diode dV/dt and dI/dt Capability|||||||||S|
|Lead-Free, RoHS Compliant|||||||||TO-247AC<br>G<br>D|
||||||**G**||||**D**<br>**S**|
|||||Gate|||||Drain<br>Source|
|||||||||||
|**Base part number**<br>**Package Type**|**Standard Pack**<br>**Form**|**Standard Pack**|**Quantity**||||||**Orderable Part Number**|
|IRFP4137PbF<br>TO-247AC|Tube||25||||||IRFP4137PbF|



||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V|38|A|
|ID @TC= 100°C|Continuous Drain Current, VGS @10V|27||
|IDM|Pulsed Drain Current|152||
|PD @TC= 25°C|Maximum Power Dissipation|341|W|
||Linear DeratingFactor|2.3|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|dv/dt|Peak Diode Recoverydv/dt|8.9|V/ns|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300||
||Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)||



1 www.irf.com        © 2012 International Rectifier October 30, 2012 ~~ne~~ 

~~16é4R~~ 

IRFP4137PbF ~~pe~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|gfs|Forward Transconductance|45|–––|–––|S|VDS= 50V,ID=24A|
|---|---|---|---|---|---|---|
|Qg<br>~~————————~~|Total Gate Charge<br>~~————————~~|–––|83|125|nC|ID= 24A<br>VDS= 150V<br>VGS= 10V<br>~~—~~|
|Qgs<br>~~————————~~|Gate-to-Source Charge<br>~~————————~~|–––|28|42|||
|Qgd<br>~~————————~~|Gate-to-Drain Charge<br>~~————————~~|–––|26|39|||
|td(on)<br>~~————————~~<br>~~=e~~|Turn-On DelayTime<br>~~————————~~<br>~~=e~~|–––<br>~~=e~~|18<br>~~=e~~|–––<br>~~=e~~|ns<br>~~=e~~|VDD= 195V<br>ID= 24A<br>RG= 2.2<br>VGS= 10V<br>~~—~~<br>~~=e~~|
|tr<br>~~————————~~<br>~~=e~~|Rise Time<br>~~————————~~<br>~~=e~~|–––<br>~~=e~~|23<br>~~=e~~|–––<br>~~=e~~|||
|td(off)<br>~~————————~~<br>~~=e~~|Turn-Off DelayTime<br>~~————————~~<br>~~=e~~|–––<br>~~=e~~|34<br>~~=e~~|–––<br>~~=e~~|||
|tf<br>~~=e~~|Fall Time<br>~~=e~~|–––<br>~~=e~~|20<br>~~=e~~|–––<br>~~=e~~|||
|Ciss<br>~~=e~~<br>~~Sa~~|Input Capacitance<br>~~=e~~<br>~~Sa~~|–––<br>~~=e~~<br>~~Sa~~|5168<br>~~=e~~|–––<br>~~=e~~|pF<br>~~=e~~<br>~~(OQ~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz<br>~~=e~~|
|Coss<br>~~Sa~~|Output Capacitance<br>~~Sa~~|–––<br>~~Sa~~|300|–––|||
|Crss<br>~~Sa~~|Reverse Transfer Capacitance<br>~~Sa~~|–––<br>~~Sa~~|77|–––|||
|Coss eff.(ER)<br>~~eeses—‘<‘“a;d~~<br>~~ee~~|Effective Output Capacitance (Energy Related)<br>~~eeses—‘<‘“a;d~~<br>~~nr~~|–––<br>~~eeses—‘<‘“a;d~~<br>~~nr~~<br>~~tt~~|196<br>~~eeses—‘<‘“a;d~~<br>~~nr~~<br>~~ts~~|–––<br>~~eeses—‘<‘“a;d~~<br>~~nr~~<br>~~(OQ~~||VGS= 0V, VDS = 0V to 240V<br>See Fig.11|
|Coss eff.(TR)<br>~~ee~~|Output Capacitance(Time Related)<br>~~nr~~|–––<br>~~nr~~<br>~~tt~~|265<br>~~nr~~<br>~~ts~~|–––<br>~~nr~~<br>~~(OQ~~||VGS= 0V,VDS = 0V to 240V|
|**Diode Characteristics**<br>~~eenr~~<br>~~tt ts(OQ~~<br>~~ee~~<br>~~ID(RS(RD(OD(OO~~|||||||
|~~ee~~|**Parameter **<br>~~ID~~|**Min.**<br>~~(RS~~|**Typ. M**<br>~~(RD(OD~~|**. Max.**<br>~~(RD(OD~~|**Units**<br>~~(OO~~|**Conditions**|
|IS<br>~~ee~~<br>~~ff~~|Continuous Source Current<br>(BodyDiode)<br>~~ID ~~<br>~~ff~~|–––<br> ~~(RS ~~<br>~~ff~~|–––<br> ~~(RD(OD~~<br>~~ff~~|40<br>~~(RD(OD ~~<br>~~ff~~|A<br> ~~(OO~~<br>~~ff~~<br>~~ds~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~ff~~<br>~~4~~|
|ISM<br>~~ff~~<br>~~a~~<br>~~ee~~|Pulsed Source Current<br>(Body Diode)<br>~~ff~~<br>~~a~~<br>~~ns~~|–––<br>~~ff~~<br>~~tt~~|–––<br>~~ff~~<br>~~rd~~|160<br>~~ff~~<br>~~ds~~|||
|VSD<br>~~ee~~|Diode Forward Voltage<br>~~ns~~|–––<br>~~tt~~|–––<br>~~rd~~|1.3<br>~~ds~~|V<br>~~ds~~|TJ= 25°C,IS= 24A,VGS= 0V|
|trr<br>~~ee~~<br>~~EE~~<br>~~ee~~|Reverse Recovery Time<br>~~ns ~~<br>~~EE~~<br>~~ee~~|–––<br> ~~tt~~<br>~~EE~~|302<br>~~rd ~~<br>~~EE~~|–––<br> ~~ds~~<br>~~EE~~|ns<br>~~ds~~<br>~~EE~~<br>~~ee~~|TJ =25°CVDD= 255V<br>TJ =125°CIF= 24A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~EE~~<br>~~ee~~|379<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|||
|Qrr<br>~~EE~~<br>~~ee~~|Reverse Recovery Charge<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|1739<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|nC<br>~~EE~~<br>~~ee~~||
|||–––<br>~~ee~~|2497<br>~~ee~~|–––<br>~~ee~~|||
|IRRM<br>~~ee~~|Reverse Recovery Current<br>~~ee~~|–––<br>~~ee~~|13<br>~~ee~~|–––<br>~~ee~~|A<br>~~ee~~||



 Recommended  max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V. 

 ISD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ  175°C. 

- Pulse width 400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994 

 Ris measured at TJ approximately 90°C 

2 www.irf.com        © 2012 International Rectifier October 30, 2012 ~~a~~ 

~~LtaR~~ 

IRFP4137PbF ~~Po~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>100 8.0V 8.0V<br>7.0V6.5V 100 7.0V 6.5V<br>6.0V 6.0V<br>5.5V 5.5V<br>10 BOTTOM 5.0V BOTTOM 5.0V<br>10<br>ZO 5.0V<br>Pa<br>1<br>id | [ee]<br>1<br>0.1 5.0V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>ei St tt<br>0.01 0.1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>Fig 1.   Typical Output Characteristics<br>1000 3.5<br>I D  = 24A<br>3.0 VGS = 10V<br>100<br>2.5<br>Ta] TJ = 175°C Ty<br>T J  = 25°C<br>10 oft} 2.0 [ryEEE<br>1.5<br>1<br>HA 1.0 EepAce<br>VDS = 50V<br>60µs PULSE WIDTH<br>0.1 Ht} 0.5 Cet<br>2 4 6 8 10 12 14 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 24A<br>10000 CC rss  oss    = C= C ds gd  + C gd 12.010.0 VVDS DS = 240V= 150V<br>Ciss VDS= 60V<br>8.0<br>1000<br>SU Coss 6.0<br>Crss 4.0<br>100<br>Heaes) EEE<br>2.0<br>AUT ee<br>10 0.0<br>1 10 100 1000 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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IRFP4137PbF<br>T@R___—s<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T J  = 175°C<br>100 100<br>100µsec<br>TJ = 25°C<br>10 10<br>1msec<br>1 AfiM 1 1 0mse c<br>Tc = 25°C<br>Tj = 175°C DC<br>V GS  = 0V Single Pulse<br>0.1 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>42 370<br>Id = 3.5mA<br>360<br>35 Sa TL FE<br>350<br>340<br>28<br>PSE er<br>330<br>21 320<br>Z<br>310<br>SSS UEGZEEE<br>14<br>300<br>290<br>7<br>Poo BRREEE<br>280<br>0 270<br>ptt | ft | Er<br>25 50 75 100 125 150 175 -60 -20 20 60 100 140 180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Case Temperature  Fig 10.   Drain-to–Source Breakdown Voltage<br>9.0 6.0<br>8.0<br>7.0 5.0<br>TTT<br>6.0<br>4.0<br>5.0<br>BSS<br>4.0<br>3.0<br>ID = 250µA<br>3.0 BRS ID = 1.0mA<br>ID = 1.0A<br>2.0<br>2.0<br>1.0 ATA<br>0.0 1.0 UNE<br>-50 0 50 100 150 200 250 300 350 -75 -25 25 75 125 175 225<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>Energy (µJ)<br>VGS(th), Gate threshold Voltage (V)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Coss Stored Energy 

**Fig 12.** Threshold Voltage vs. Temperature 

4 www.irf.com        © 2012 International Rectifier October 30, 2012 ~~=:””””"...~~ 

~~TIGR~~ 

IRFP4137PbF ~~a~~ 

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1<br>TL<br>D = 0.50<br>0.1 0.20<br>0.10<br>as<br>0.05<br>0.02<br>0.01 eee<br>0.01<br>gees SINGLE PULSE iE | iil<br>| dA |<br>0.001 Le ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 sili Alizee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

**==> picture [463 x 425] intentionally omitted <==**

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50 60<br>IF = 16A IF = 24A<br>VR = 255V VR = 255V<br>40 T J = 25°C 50 TJ = 25°C<br>TJ = 125°C TJ = 125°C<br>He 40 | Hee<br>30<br>ye evan<br>30<br>20<br>LA ee<br>20<br>10 cana 10 ecaeee<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig 14.   Typical Recovery Current vs. dif/dt  Fig 15.   Typical Recovery Current vs. dif/dt<br>3500 5000<br>IF = 16A IF = 24A<br>4500<br>VR = 255V Ty VR = 255V T_T<br>3000 TJ = 25°C 4000 T J = 25°C<br>TJ = 125°C TJ = 125°C<br>ee 3500 Tet<br>2500<br>3000<br>2000 Rapes 2500 |ft f=CRE<br>2000<br>1500<br>1500<br>ee<br>1000 1000<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A) IRRM (A)<br>QRR (nC) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Recovery Current vs. dif/dt 

**Fig 16.** Typical Stored Charge vs. dif/dt 

**Fig 17.** Typical Stored Charge vs. dif/dt 

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IRFP4137PbF 

**Fig 18.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>aeJL tp Y 0.01 |<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

**==> picture [18 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**==> picture [106 x 24] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds !H<br>Vgs<br>f<br>Vgs(th)<br>a tngpng | |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 21a.** Gate Charge Test Circuit 

**Fig 21b.** Gate Charge Waveform 

6 www.irf.com        © 2012 International Rectifier 

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a ~~IsaR~~ 

IRFP4137PbF ~~Se~~ 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

**==> picture [199 x 311] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>E2/2 J A A A2 "A"<br>! > " T C ~<br>\<br>Q<br>E2<br>i 2X<br>| D<br>» B<br>resi<br>L1 Ca<br>i) "A" -<br>L<br>SEE<br>VIEW "B"<br>!<br>2x  b2 3x  b Ø .010  B A  c<br>b4<br>A1<br>e 2x<br>LEAD TIP<br>Ø P<br>Ø .010  B A  -A-<br>L yi<br>S \ } td<br>A<br>‘ D1<br>VIEW: "B"<br>THERMAL PAD<br>! PLATING<br>BASE METAL<br>! N<br>al E1 al (c) v3 ;<br>Ø .010  B A<br>i<br>VIEW: "A" - "A"<br>(b, b2, b4)<br>SECTION: C-C, D-D, E-E<br>**----- End of picture text -----**<br>


## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

**==> picture [455 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL proxi<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO |. IeaR  135H 4<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~164R~~ 

IRFP4137PbF ~~pe~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site:  http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 

Visit us at www.irf.com for sales contact information **.** 

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- [Supplier page](https://es.farnell.com/infineon/irfp4137pbf/mosfet-n-ch-300v-38a-to-247ac/dp/2456712)
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