# Power MOSFET, N Channel, 200 V, 75 A, 0.021 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2781129/)

**URL**: https://novapart.co/products/IRFP4127PBF/power-mosfet-n-channel-200-v-75-a-0021-ohm-to
**SKU**: IRFP4127PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8700
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.017ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 341W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 0.021ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781129/)

~~TR Rectifier~~ 

## IRFP4127PbF 

|**Application**<br>High Efficiency Synchronous Rectification in SMPS<br>Uninterruptible Power Supply<br>High Speed Power Switching<br>Hard Switched and High Frequency Circuits<br>**Benefits**|**Application**<br>High Efficiency Synchronous Rectification in SMPS<br>Uninterruptible Power Supply<br>High Speed Power Switching<br>Hard Switched and High Frequency Circuits<br>**Benefits**|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|HEXFET®Power MOSFET<br>D<br>S<br>G<br>**VDSS**<br>**200V**<br>**RDS(on) typ.**<br>**17m**<br> **max**<br>**21m**<br>**ID**<br>**75A**<br>~~==~~|
|---|---|---|---|---|---|---|---|---|---|---|
|Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness|||||||||||
|Fully Characterized Capacitance and Avalanche SOA|||||||||||
|Enhanced body diode dV/dt and dI/dt Capability|||||||||S||
|Lead-Free, RoHS Compliant|||||||||TO-247AC<br>G<br>D||
||||||**G**||||**D**|**S**|
|||||Gate|||||Drain|Source|
||||||||||||
|**Base part number**<br>**Package Type**|**Standard Pack**<br>**Form**|**Standard Pack**|**Quantity**||||||**Orderable Part Number**||
|IRFP4127PbF<br>TO-247AC|Tube||25||||||IRFP4127PbF||



## **Application** 

- High Efficiency Synchronous Rectification in SMPS 

- Uninterruptible Power Supply 

- High Speed Power Switching 

- Hard Switched and High Frequency Circuits 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V|75|A|
|ID @TC= 100°C|Continuous Drain Current, VGS @10V|53||
|IDM|Pulsed Drain Current|300||
|PD @TC= 25°C|Maximum Power Dissipation|341|W|
||Linear DeratingFactor|2.3|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|dv/dt|Peak Diode Recoverydv/dt|57|V/ns|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300||
||Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)||



1 SS 

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IRFP4127PbF ~~[LT~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|gfs|Forward Transconductance|45|–––|–––|S|VDS= 50V,ID=44A|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge|–––|100|150|nC|ID= 44A<br>VDS= 100V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|30|–––|||
|Qgd|Gate-to-Drain Charge|–––|31|–––|||
|Qsync|Total Gate Charge Sync.(Qg - Qgd)|–––|69|–––||ID= 44A,VDS=0V,VGS= 10V|
|td(on)|Turn-On DelayTime|–––|17|–––|ns|VDD= 100V<br>ID= 44A<br>RG= 2.7<br>VGS= 10V|
|tr<br>~~ee~~|Rise Time<br>|–––<br>|18<br>|–––<br>|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>|–––<br>|56<br>|–––<br>|||
|tf<br>~~eeee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|22<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~ee~~<br>~~ne~~|Input Capacitance<br>~~ee~~<br>~~ne~~|–––<br>~~ee~~<br>~~ne~~|5380<br>~~ee~~<br>~~ne~~|–––<br>~~ee~~<br>~~ne~~|pF<br>~~ne~~<br>~~fr~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz<br>~~ne~~|
|Coss<br>~~ne~~|Output Capacitance<br>~~ne~~|–––<br>~~ne~~|410<br>~~ne~~|–––<br>~~ne~~|||
|Crss<br>~~ne~~|Reverse Transfer Capacitance<br>~~ne~~|–––<br>~~ne~~|86<br>~~ne~~|–––<br>~~ne~~|||
|Coss eff.(ER)<br>~~es—(isrtdT~~<br>~~ee~~|Effective Output Capacitance (Energy Related)<br>~~es—(isrtdT~~<br>~~er~~|–––<br>~~es—(isrtdT~~<br>~~er~~<br>~~ss~~|360<br>~~es—(isrtdT~~<br>~~er~~<br>~~ss~~|–––<br>~~es—(isrtdT~~<br>~~er~~<br>~~fr~~||VGS= 0V, VDS = 0V to 160V<br>See Fig.11|
|Coss eff.(TR)<br>~~ee~~|Output Capacitance(Time Related)<br>~~er~~|–––<br>~~er~~<br>~~ss~~|590<br>~~er~~<br>~~ss~~|–––<br>~~er~~<br>~~fr~~||VGS= 0V,VDS = 0V to 160V|
|**Diode Characteristics**<br>~~eeer~~<br>~~ss fr~~<br>~~eeeS~~<br>~~IS~~<br>~~(OD(OO~~|||||||
|~~ee~~|**Parameter **<br>~~e~~|**Min.**<br>~~eS~~<br>~~IS~~|**Typ. M**<br>~~S~~<br>~~(OD~~|**. Max.**<br>~~S~~<br>~~(OD~~|**Units**<br>~~S~~<br>~~(OO~~|**Conditions**<br>~~S~~|
|IS<br>~~ee~~<br>~~fe~~|Continuous Source Current<br>(Body Diode)<br>~~e~~<br>~~fe~~|–––<br>~~eS~~<br>~~IS~~<br>~~fe~~|–––<br>~~S~~<br>~~(OD~~<br>~~fe~~|75<br>~~S~~<br>~~(OD ~~<br>~~fe~~|A<br>~~S~~<br> ~~(OO~~<br>~~fe~~<br>~~ts~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~S~~<br>~~fe~~|
|ISM<br>~~fe~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~fe~~<br>~~rs~~|–––<br>~~fe~~<br>~~ttn~~|–––<br>~~fe~~<br>~~ts~~|300<br>~~fe~~<br>~~Od~~|||
|VSD<br>~~ee~~|Diode Forward Voltage<br>~~rs~~|–––<br>~~ttn~~|–––<br>~~ts~~|1.3<br>~~Od~~|V<br>~~ts~~|TJ= 25°C,IS= 44A,VGS= 0V|
|trr<br>~~ee~~<br>~~re~~|Reverse Recovery Time<br>~~rs ~~<br>~~re~~|–––<br> ~~ttn~~<br>~~re~~|136<br>~~ts ~~<br>~~re~~|–––<br> ~~Od~~<br>~~re~~|ns<br>~~ts~~<br>~~re~~|TJ =25°CVDD= 100V<br>TJ =125°CIF= 44A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~re~~|139<br>~~re~~|–––<br>~~re~~|||
|Qrr<br>~~re~~<br>~~ee~~|Reverse Recovery Charge<br>~~re~~<br>~~ee~~|–––<br>~~re~~<br>~~ee~~|458<br>~~re~~<br>~~ee~~|–––<br>~~re~~<br>~~ee~~|nC<br>~~re~~<br>~~ee~~||
|||–––<br>~~re~~<br>~~ee~~|688<br>~~re~~<br>~~ee~~|–––<br>~~re~~<br>~~ee~~|||
|IRRM<br>~~ee~~|Reverse Recovery Current<br>~~ee~~|–––<br>~~ee~~|8.3<br>~~ee~~|–––<br>~~ee~~|A<br>~~ee~~||



**Notes:**  Repetitive rating;  pulse width limited by max. junction temperature. 

 Recommended  max EAS limit, starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 44A, VGS =10V. 

 ISD 4A, di/dt A/µs, VDD V(BR)DSS, TJ  175°C. 

 Pulse width 400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

 When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994  Ris measured at TJ approximately 90°C 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>100 8.0V 8.0V<br>7.0V6.0V DO 100 7. 6.0V 0V LE<br>5.5V 5.5V<br>5.0V 5.0V<br>10 BOTTOM 4.5V BOTTOM 4.5V<br>10<br>1<br>wy) aCT<br>4.5V<br>1<br>0.1<br>cc) =  en<br>4.5V  60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.01 0.1<br>Sah Sema Bill et<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>Fig 1.   Typical Output Characteristics<br>1000 3.5<br>VDS = 50V ID = 44A<br> 60µs PULSE WIDTH 3.0 V GS  = 10V<br>100<br>= 2.5 STERERRARATC<br>TJ = 175°C<br>10 ue/, 2.0 CCCPSRRRRREEA<br>TJ = 25°C<br>1.5<br>1<br>Wy)/ 1.0 HRA AO<br>0.1 PAPEL} tpt<br>0.5<br>3.0 4.0 5.0 6.0 7.0 8.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>8000 16<br>VGS   = 0V,       f = 1 MHZ<br>CCiss rss    = C = Cgs gd + Cgd,  C ds SHORTED ID= 44A V DS = 160V<br>6000 C oss   = C ds  + C gd 12 V DS = 100V<br>Ciss VDS= 40V<br>8<br>4000<br>Tit = =&b a<br>4<br>2000 BU<br>|| oo  Ze<br>Coss<br>SUH Crss 0 ATE<br>0 0 20 40 60 80 100 120<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br><br>ID, Drain-to-Source Current<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>VDS = 50V<br>100µsec<br> 60µs PULSE WIDTH 100<br>100 fee<br>1msec<br>TJ = 175°C = 10 a OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>10<br>1<br>TJ = 25°C<br>740 ee 10msec<br>1<br>DC<br>0.1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 Jamsfil. 0.01 iat =e=<br>3.0 4.0 5.0 6.0 7.0 8.0<br>0.1 1 10 100<br>VGS, Gate-to-Source Voltage (V)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>80 260<br>Id = 5mA<br>60 240<br>40 a BNt 220 et<br>L<br>20 ELLEN. 200 pae<br>0 ELLIE 180 L LL.EE<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TC , CaseTemperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Case Temperature  Fig 10.   Drain-to–Source Breakdown Voltage<br>8.0 1200<br>                 ID<br>TOP          7.7A<br>1000<br>               12.6A<br>6.0 BOTTOM   44A<br>SRE e e 800 eee<br>4.0 600<br>400<br>2.0 ALZ| REEss<br>200<br>0.0 p2nEn 0 BXNEaASSO<br>0 40 80 120 160 200 25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>ID  , Drain Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>)<br><br>ID, Drain-to-Source Current<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to–Source Breakdown Voltage 

**Fig 11.** Typical Coss Stored Energy 

**Fig 12.** Maximum Avalanche Energy vs. Drain Current 

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IRFP4127PbF ~~a~~ 

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1<br>TLL<br>D = 0.50<br>HL TTL ll<br>0.1<br>0.20 Ri (°C/W) I (sec)<br>0.10 TT oe R 1R1 R 2R2 R 3R3 R 4 R 4 0.02  0.000019<br>— 0.05 Ton EA J  ceepepepe J  CC [ 0.08333  0.000078<br> 1 1 2 2 3 3 4 4 0.181667  0.001716<br>0.01 0.02<br>0.01 CiCi= = iRiiRi 0.11333  0.008764<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart = 25°C (Single Pulse)<br>10 A tthe eo<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs. Pulse Width 

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250<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>200 \ \ N ID = 44A<br>\<br>150 \SIN :PT TT} | yd<br>NN \<br>100 N»\ IN NW<br>50 N\ IN NQR SQ |<br>SN aN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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6.0<br>I D  = 1.0A<br>ID = 1.0mA<br>5.0 I D  = 250µA<br>4.0 Fceunegas<br>PSE<br>3.0<br>TOPS<br>2.0<br>BEEAROEANS<br>PCTS<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

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6050 EERE<br>40 ERRREER SE<br>30<br>tL ery |<br>20<br>Panne IF = 44A<br>VR = 100V<br>10<br>TJ = 125°C<br>TJ =  25°C<br>(on |<br>0<br>tT} |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


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50<br>40<br>30 THE<br>CGE<br>20<br>PPTL<br>IF = 29A<br>10 V R  = 100V<br>AEP TJ = 125°C<br>TJ =  25°C<br>0 P=<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>Fig 17.   Typical Recovery Current vs. dif/dt<br>3000<br>2500 ERR<br>2000 tT Ler<br>1500<br>{ter TL<br>1000<br>ELE IF = 29A TL<br>VR = 100V<br>500<br>TJ = 125°C<br>TJ =  25°C<br>rn<br>0<br>tL |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


**Fig 17.** Typical Recovery Current vs. dif/dt 

**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Stored Charge vs. dif/dt 

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3000<br>2500 LT er<br>2000<br>BREEZES<br>1500<br>tet<br>1000 BESZ ALTnne<br>IF = 44A<br>VR = 100V<br>500<br>TJ = 125°C<br>TJ =  25°C<br>|<br>0<br>tit | | |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Stored Charge vs. dif/dt 

6 ~~—~~ 

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**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 23a.** Switching Time Test Circuit 

**Fig 23b.** Switching Time Waveforms 

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Vds H! Id<br>Vgs<br>f<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

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IRFP4127PbF ~~[TT~~ 

## ~~IéaR~~ 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

**==> picture [198 x 311] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>! E2/2 a n > A —“ A ir A2 "A" «<br>;<br>Q<br>E2<br>i 2X<br>| D<br>> B<br>L1 ' 1 2 3 |<br>"A" ~<br>i)<br>L<br>SEE<br>VIEW "B"<br>1<br>2x  b2 3x  b Ø .010  B A  c<br>b4<br>A1<br>e 2x<br>LEAD TIP<br>Ø P<br>Ø .010  B A  -A-<br>1 Lott<br>S \ ] td<br>i<br>¢ D1<br>VIEW: "B"<br>THERMAL PAD<br>! PLATING<br>BASE METAL<br>Yo y<br>nl E1 = (c) 2<br>Ø .010  B A<br>1<br>VIEW: "A" - "A"<br>(b, b2, b4)<br>SECTION: C-C, D-D, E-E<br>**----- End of picture text -----**<br>


## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

**==> picture [454 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL pxexi|<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO | IeaR  135H |<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

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www.irf.com © 2015 International Rectifier 

~~TéaR~~ 

IRFP4127PbF ~~[LT~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site:  http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 

Visit us at www.irf.com for sales contact information **.** 

9 www.irf.com ~~=~~ 

~~_~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFP4127PBF/power-mosfet-n-channel-200-v-75-a-0021-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp4127pbf/mosfet-n-ch-200v-75a-to-247ac/dp/2781129)
---

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