# Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:8649375/)

**URL**: https://novapart.co/products/IRFP3710PBF/power-mosfet-n-channel-100-v-57-a-0025-ohm-to
**SKU**: IRFP3710PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4200
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 57A |
| Drain Source On State Resistance | 0.025ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8649375/)

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D<br>Voss = 100V<br>Rps(on) =0.025 Ω<br>G<br>ID =57A<br>S<br>**----- End of picture text -----**<br>


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θ<br>Ric<br>θ<br>θ<br>(Rus<br>**----- End of picture text -----**<br>


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∆ ∆<br>Static Drain-to-Source On-Resistance -—-| | -—-[0.025| Ω | Vas = 10V, Ip = 28A ®<br>Gate Threshold Voltage | 2.0 ||4.0 | V_ | Vos= Ves, Ip = 250HA<br>Forward Transconductance | 20 —-|——|| S$ | Vps= 25V, Ip = 28A<br>|-_ Drain-to-Source; Leakage Current | — |—| A VpsDS = 100V,GSVes = OV<br>9 F — |—|250 |" | Vos = 80V, Ves = OV, Ty = 150°C<br>loss Gate-to-Source Forward Leakage | -——— | ——- | 100 | nA Ves = 20V<br>[| Gate-to-Source Reverse Leakage | —- | —-|-100 | Vos = -20V<br>[Qs Total Gate Charge [— [= [790 |] = 28<br>[Qui ‘|| Gate- to-Drainto-Source("MilleCha r ")geCharge | —- | —-]-—| 8226 || nC | V pe s =  81 0 V,V See Fig. 6 and 13 ©<br>Turn-On Delay Time 4<br>_[RiseTime SSCs | 88 | —] J | Von= 28= 50<br>Ω<br>Turn-Off Delay Time Tse [=] ™| Ro=25<br>Ω,<br>Lp FallTime Internal Drain Inductance P— [4s 45  [=] | Ro=17_ Beteneen leadea See , tig 100 D<br>nH 6mmfrom  (0.25in.)package G<br>Ls Intmemal 1SSource Inductincucrance 7.5, and center of die contact S<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>**----- End of picture text -----**<br>


> ISD ≤ 28A, di/dt ≤ 460A/Us, Vop ≤ ≤ 

≤ ≤ 

Ω 

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1000                    VGS 1000                    VGS<br> TOP           15V  TOP           15V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   7.0V                    7.0V<br>                   6.0V                    6.0V<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>100 LAEZI 100 PoTice| ge<br>| | EE)” Zeon nn  4.5V eee<br>10 ee  4.5V 10 f pr<br>2 A ee el > MB |<br>A ee 7A<br>1 PT  T   = 25°C Orrrre—eee C A 1 PU) eee  T   = 175°CC<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>1000 SSSBSS——S=S=S_—_—————ee ee eee 3.02.5 E LEL<br>ee EEE EEE<br>ee T  = 25°CJ PE<br>100 2.0<br>T  = 175°CJ<br>Boeee eee  ce Me  ene 1.5 ae<br>if o o PPP Aa<br>| Af PE ee lA<br>10 1.0<br>acs aT<br>7(aoa [a] a A aSeSee 0.5 TELE T EEEELE<br>1 FPPL TF  V     = 50V ous DS purse wore A 0.0 PEPPv= svg<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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6000<br>V      = 0V,         f = 1MHzGS<br>|| C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>5000 =n C      = CC      = C     + Crss         gdoss        ds         gd<br>NA s CH eee<br>4000<br>PC LETT TT<br>ee<br>3000<br>ee el<br>ss<br>Se all<br>2000 CO Er<br>CST ss<br>1000<br>SSS ——™ .<br>0 0 ee |<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000<br>ee<br>100<br>|<br>er<br>T  = 175°CJ<br>sr ee<br>ae T  = 25°CJ osee<br>10<br>A)  e e<br>pf<br>a<br>1 (2oe oee ee<br>0.4 0.8 1.2 1.6 2.0<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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20<br>I    = 28AD<br>P t tw tov<br>Ppa Bap<br>16  V      = 20VDS<br>P| tt Sp _|<br>12 Py RY<br>| I<br>Pot tL OLA |<br>8<br>| |v |<br>Fh<br>4 => aeenen<br>OF<br>    SEE FIGURE 13<br>0 [Pores<br>0 40 80 120 160 200<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br> OPERATION IN THIS AREA LIMITED<br>UH                        BY RDS(on)<br>10µs<br>100 | Lr LY jy<br>Mali Sim f s<br>Kae?| eeeh 100µs |[ TT TTT<br>10 1ms<br>poN y<br>SE E<br>10ms<br>1 ee  Single Pulse 1 cit eta<br>1 10 100 1000<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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60<br>wt tte tt tt tt Vos Rp<br>50 PSE EEE Ves sur<br>Pi TNE EE TT TT Re | -<br>40 Pt TET PNET TTT |<br>Pt tT tT ING TT sf tov<br>30 ERRSERRE EEEANEEeeeNEs PulsePay Fase Width ≤ 0.1 %≤ 1  ys :<br>20<br>SEER EEEEEaNe Fig 10a. Switching Time Test Circuit<br>10 PEEEEEE EEE VDS<br>90%<br>Pitt tt ttt ty /<br>0 Pit TTT tT Tt Tt |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS |<br>or or<br>Fig 9. Maximum Drain Current Vs. td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 1 ee ee<br>ea ea ee elcgee ner<br>D = 0.50<br>P T<br>a cet |<br>a ee aeell<br>0.1 — - 0.200.10 =OL<br>i ee ee ee<br>PDM<br>as 0.05 e aaa eT eee eea!<br>a 92s2s alem ee eeeee t1<br>0.02 SINGLE PULSE t2<br>I 0.01 (THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J= P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>: 20V it<br>tp 0.01Ω<br>Fig 12a. Unclamped Inductive Test Circuit<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>~<— tp —><br>/<br>y |<br>/y Ih<br>IAS<br>12b. Unclamped Inductive<br>QG<br>10V B o<br>QGS QGD<br>V [| G 7<br>Charge<br>**----- End of picture text -----**<br>


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1200<br>                    ID<br>Vt| TOP            11A<br>Nee                    20A<br>1000 PAT BOTTOM    28A<br>tt<br>800 PON | tt<br>GENE See<br>LERNER Eee<br>600 mR NNEE<br>400<br>PINS EE<br>PpOINAKINEEE<br>200<br>SstPp SAA<br> V      = 25V PS DD<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>ae +<br>| J | D.U.T. -VDS<br>VGS<br>@&<br>3mA<br>Oe<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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3.65 (.143) - D -<br>15.90 (.626) 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>= - B - - A - _ 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>| LO | mi<br>Hg uae<br>20.30 (.800)<br>19.70 (.775) 2X 5.50 (.217) NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>an 1 2 3 : 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>- C -      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559)<br>3.70 (.145)<br>LEAD ASSIGNMENTS<br>|| Hexfet IGBT<br>2.40 (.094)2.00 (.079) 3X 1.40 (.056)1.00 (.039) 3X 0.80 (.031)0.40 (.016) 1 - Gate2 - Drain LEAD 1 - GATE ASSIG NMENTS 1 - Gate2 - Collector<br>co 5.45 (.215)2X2X a 3.40 (.133)3.00 (.118)0.25 (.010) M C A S 2.60 (.102)2.20 (.087) 3 - Source4 - Drain2 - DRAIN3 - SOURCE4 - DRAIN3 - Emitter4 - Collector<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO IgR 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/05 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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