# Power MOSFET, N Channel, 30 V, 210 A, 2800 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:3155141/)

**URL**: https://novapart.co/products/IRFP3703PBF/power-mosfet-n-channel-30-v-210-a-2800-ohm-to
**SKU**: IRFP3703PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0000
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 210A |
| Drain Source On State Resistance | 2800µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155141/)

## **SMPS MOSFET** 

## IRFP3703PbF 

## HEXFET Power MOSFET 

## **Applications** 

Synchronous Rectification Active ORing Lead-Free 

**VDSS RDS(on) max ID 30V 0.0028** Ω **210A** eeee 

## **Benefits** 

Ultra Low On-Resistance Low Gate Impedance to Reduce  Switching Losses Fully Avalanche Rated 

**TO-247AC** 

## **Absolute Maximum Ratings** 

|~~aee~~|**Parameter**|**Max.**<br>©|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~aee~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~|210<br>100<br>1000<br>©<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C<br>~~ee~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~|||
|IDM<br>~~a~~<br>~~es~~|Pulsed Drain Current<br>~~a~~<br>~~es~~|||
|PD@TC= 25°C<br>~~ee~~|Power Dissipation<br>~~ee~~|230<br>3.8|W|
|PD@TA= 25°C|Power Dissipation|||
|~~sD~~<br>~~——————————————~~|Linear DeratingFactor<br>~~sD~~<br>~~——————————————~~|1.5<br>~~sD~~<br>~~——————————————~~|W/°C<br>~~sD~~<br>~~——————————————~~|
|VGS<br>~~——————————————~~|Gate-to-Source Voltage<br>~~——————————————~~|± 20<br>~~——————————————~~|V<br>~~——————————————~~|
|dv/dt<br>~~——————————————~~<br>~~**e**e~~|Peak Diode Recoverydv/dt<br>~~——————————————~~<br>~~I~~|5.0<br>~~——————————————~~<br>~~I~~|V/ns<br>~~——————————————~~<br>~~I~~|
|TJ,TSTG<br>~~——————————————~~<br>~~**e**e~~|Junction and Storage Temperature Range<br>~~——————————————~~<br>~~I~~<br>~~f~~|-55  to + 175<br>~~——————————————~~<br>~~I~~<br>~~f~~|°C<br>~~——————————————~~<br>~~I~~<br>~~f~~|



## **Typical SMPS Topologies** 

Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications 

Offline High Power AC/DC  Convertors using  Synchronous Rectification 

> Notes ® hrough  are on page 8 © 

www.irf.com 

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7/16/04 

## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max. Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.028    –––    V/°C   Reference to 25°C, ID= 1mA<br>–––<br>2.3<br>2.8<br>VGS= 10V, ID= 76A<br>–––<br>2.8<br>3.9<br>VGS= 7.0V, ID= 76A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 24V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 24V, VGS= 0V, TJ= 150°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -20V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>mΩ<br>rs<br>~~rs rs rs es~~<br>~~es~~<br>~~nsGn~~<br>~~es~~<br>~~GG~~<br>~~BE4~~<br>~~aeR~~<br>~~**|**~~<br>~~Se~~<br>~~rs~~<br>cere|
|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max. Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>150<br>–––<br>–––<br>S<br>VDS= 24V, ID= 76A<br>ee<br>~~ee ee~~<br>~~es~~|
|Qg<br>Total Gate Charge<br>–––<br>209<br>–––                ID= 76A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>62<br>–––<br>nC<br>VDS= 24V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>42<br>–––<br>VGS= 10V,<br>td(on)<br>Turn-On Delay Time<br>–––<br>18<br>–––<br>VDD= 15V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>123<br>–––<br>ID= 76A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>53<br>–––<br>RG= 1.8Ω<br>tf<br>Fall Time<br>–––<br>24<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>8250<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>3000<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>290<br>–––<br>pF<br>ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>10360 –––<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>3060<br>–––<br>VGS= 0V,  VDS= 24V,  ƒ = 1.0MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>2590<br>–––<br>VGS= 0V, VDS= 0V to 24V<br>ns<br>~~a~~<br>~~ee~~<br>~~**es**~~<br>~~ee~~<br>~~@~~<br>~~ee~~<br>es ee<br>~~Rs~~<br>ee~~es~~<br>~~ee~~<br>~~es ee~~<br>~~@~~<br>~~ee~~ eee<br>es<br>a es<br>ee<br>Rs<br>a<br>ee<br>®|



## **Avalanche Characteristics** 

|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>1700<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>76<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>23<br>mJ<br>eeee<br>eseG<br>Sn<br>es<br>©|
|---|
|**Diode Characteristics**|
|S<br>D<br>G<br>**Parameter**<br>**Min. Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(BodyDiode)<br>–––<br>–––<br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>0.8<br>1.3<br>V<br>TJ= 25°C, IS= 76A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>80<br>120<br>ns<br>TJ= 25°C, IF= 76A, VDS= 16V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>185<br>275<br>nC<br>di/dt = 100A/µs<br>210<br>1000<br>ee<br>~~ee~~<br>~~—~~<br>~~,~~<br>~~(a~~<br>~~ee ee ee~~<br>~~ee ee~~<br>~~|~~<br>~~®~~<br>~~ee~~<br>ee ee<br>~~ee~~<br>®|
|2<br>www.irf.com|



**Diode Characteristics** 

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**----- Start of picture text -----**<br>
 10000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V ss osetia 7.0V Hteeee<br>6.0V 6.0V<br>5.5V bf fff 5.5V Hy 7 Zoe Zoe<br> 1000 5.0V HI 5.0V HN72M2M<br>BOTTOM 4.5V BOTTOM 4.5V<br>ae. ao eet V Zen alll<br>ED”. e ae eetSl ay yey yeyy /, am |<br> 100  100<br>> 12S SS Sa SS eet ey 727 |<br>Za ww /4p240tl 4.5V ll<br>4.5V<br> 10<br>ee 7 ga a<br> 1 HP E RE 20µs PULSE WIDTHT  = 25J °C  10 40 20µs PULSE WIDTHT  = 175JT  = 175JJ °CC<br>0.1  1  10  100 0.1  1  10<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DSDS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 10000 2.0<br>ID = 260A<br>a======_=_=_==ee ee ee ee eee eee PE ELE<br>a a Wa<br>er 1.5 EET<br> 1000 T  = 25  CJ °<br>pif tt} ee EEA<br>ES= Sea T  = 175  CJ ° 1.0 EEer<br>e ee L |<br>A q rr EE<br> 100 eeFifi titty ert<br>=i SSSSSaaaa=a)RAee eeeeREee ee eee 0.5 UTEPEEE<br>V      = 15VDS<br> 10 cee 20µs PULSE WIDTH 0.0 VGS = 10V<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V Hteeee<br>6.0V<br>5.5V Hy 7 Zoe Zoe<br>5.0V HN72M2M<br>BOTTOM 4.5V V Zen alll<br>ay yey yeyy /, am |<br> 100<br>ey 727 |<br>ww /4p240tl 4.5V ll<br>7 ga a<br> 10 40 20µs PULSE WIDTHT  = 175JT  = 175JJ °CC<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>D<br>I   ,  Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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14000 VGS = 0V, f = 1MHz 20 ID = 76A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 24V<br>12000 TT] CCrssoss == CCgdds + Cgd 16 eH o T<br>ee e e tn nnnsnneveracis<br>10000<br>S | [—_——] S S eet<br>Ciss 12<br>8000 NSS SES SEREEREREEER?4G8<br>a PEE A<br>6000 Cn 8 TTT TTTTIA<br>Coss<br>4000 rPh, e Eoo SERRE DAAa<br>4<br>2000<br>| TTT<br>PSS TT FOR TEST CIRCUIT<br>0 Pr, Crss Scoth 0 Vannay pease SEE FIGURE       13<br> 1  10  100 0 40 80 120 160 200 240 280 320<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>           Drain-to-Source Voltage           Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br> 100<br>T  = 175  CJ °  1000<br>po 4 fF TETne at 10us EE<br> 10<br>PP TAZ Tt TT | BSS Ht FE 100us<br>== T  = 25  C = J ° — SHE S al<br>== =  100 ll l<br> 1 1ms<br>fe PP ° PS<br> T TCJ = 25  C= 175  C° 10ms<br>SSTLEEL ELE SR V      = 0 V GS ea  Single Pulse THl atlll<br>0.1  10<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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250<br>aan LIMITED BY PACKAGE an<br>200<br>Ped | | |<br>Pp pe | Ty |<br>150<br>POE<br>PEER<br>100<br>Ht<br>es er<br>50 Pi [TTT] TT A<br>pitti<br>0 PE ETTtit eeTy tTyy<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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oo ≤ 1  -<br>≤ 0.1 %<br>i<br>uty Factor<br>Fig 10a.   Switching Time Test Circuit<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS |<br>\¢ >< >! «+ s<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 1<br>g D = 0.50 n<br>e eee |<br>0.20<br>0.1 n e<br>e 0.10 |e|<br>0.05<br>— SS ere<br>S 0.02 e<br>0.01 SINGLE PULSE PDM<br>0.01 (THERMAL RESPONSE) i ET<br>oe r ee ip t1<br>EEE E E t2<br>Notes:<br>rT [TTT] 1. Duty factor D = ee t   / t1 2<br>ee 2. Peak TJ = P DM x  ZthJC + TC<br>0.001 ll<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>TL<br>oe 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [121 x 91] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>e tp [—]<br>/<br>/ |<br>IAS f d<br>**----- End of picture text -----**<br>


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6000<br>ID<br>5000 PiP|tT [TT] TOP 31A 54A<br>BOTTOM 76A<br>Ne<br>t<br>4000 IV | t T<br>3000 ENG Eee<br>PN TT<br>Pi IN| Tt yt ye<br>2000 NENNNO RK TE<br>1000 Pp SAAN NU<br>Pt tT oS RSS<br>0 Pit ty Pr [Sse]<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
QG<br>o o<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>ws .3µF<br>Lei +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL 1) O ©<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO so 56           57 n  035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by max. junction temperature. 

Starting TJ = 25°C, L = 0.6mH RG = 25Ω, IAS = 76A. ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS © Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 7/04 

www.irf.com 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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