# Power MOSFET, N Channel, 150 V, 43 A, 0.042 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:3155140/)

**URL**: https://novapart.co/products/IRFP3415PBF/power-mosfet-n-channel-150-v-43-a-0042-ohm-to
**SKU**: IRFP3415PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7600
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 43A |
| Drain Source On State Resistance | 0.042ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155140/)

## PD - 95512 IRFP3415PbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

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D<br>VDSS = 150V<br>R  = 0.042Ω<br>DS(on)<br>G<br>ID = 43A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. 

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TO-247AC<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|SO<br>~~a~~|**Parameter**<br>SO|**Max.**<br>SO<br>~~ae~~|**Max.**<br>SO<br>~~ae~~|**Units**<br>SO<br>~~ae~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~<br>~~—_————————~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~—_————————~~|43<br>~~—_————————~~<br>~~ae~~||A<br>~~—_————————~~<br>~~ae~~<br>|
|ID@ TC= 100°C<br>~~—_————————~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~—_————————~~|30<br>~~—_————————~~<br>~~ae~~|||
|IDM<br>~~—_————————~~<br>~~a~~<br>~~sh~~|Pulsed Drain Curren<br>~~—_————————~~<br>~~sh~~|~~—_————————~~<br>~~ae~~<br>~~m0~~<br>|||
|PD@TC= 25°C<br>~~a~~<br>~~sh~~|Power Dissipation<br>~~sho>~~|200<br>~~ae~~<br>~~m0~~<br>~~o>~~||W<br>~~ae~~<br>~~o>~~|
|~~sh~~<br>~~as~~|Linear DeratingFactor<br>~~sh~~<br>~~as~~|1.3<br>~~m0~~<br><br>~~as~~||W<br><br>~~as~~|
|VGS<br>~~as~~<br>~~i~~|Gate-to-Source Voltage<br>~~as~~<br>~~a~~<br>~~i~~|± 20<br>~~as~~<br>~~a~~<br>~~i~~||V<br>~~as~~<br>~~i~~|
|EAS<br>~~i~~|Single Pulse Avalanche Energy<br>~~i~~|590<br>~~i~~||mJ<br>~~i~~|
|IAR<br>~~oe~~|Avalanche Curren<br>~~oe~~|22<br>~~oe~~||A<br>~~oe~~|
|EAR<br>~~oe~~|Repetitive Avalanche Energy<br>~~oe~~|20<br>~~oe~~<br>~~ee~~||mJ<br>~~oe~~<br>~~ee~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~||V/ns<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175||°C|
||SolderingTemperature, for 10 seconds|300(1.6mm from case)|||
|~~a~~|Mounting torque, 6-32 or M3 srew<br>~~a~~|10 lbf•in (1.1N•m)<br>~~a~~||~~a~~|
|**Thermal Resistance**<br>~~a~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|0.75|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––||
|RθJA|Junction-to-Ambient|–––|40||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.75||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|40||



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## IRFP3415PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>es<br>~~a~~|**Min.**<br>es<br>~~es ee~~<br>|**Typ. **<br>es<br>~~ee~~<br>|**Max.**<br>es<br>|**Units**<br>es<br>|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~a~~|150<br>~~es ee~~<br><br>~~es~~|–––<br>~~ee~~<br>|–––<br>|V<br>|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ <br>~~a~~<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~aee~~<br>~~a~~|–––<br>~~es ee~~<br>~~ee~~<br>~~es~~|0.17<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~a~~|–––<br>~~es~~<br>~~es~~|–––|0.042|Ω|VGS= 10V, ID= 22A<br>~~®~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~<br>~~es~~|2.0<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~|
|gfs<br>~~bs__[Draintosouce~~|Forward Transconductance<br>~~ee~~<br>~~__[DraintosouceLesageCometJ}~~|19<br>~~es~~<br>~~ee~~<br>~~J}~~|–––<br>~~ee~~<br>~~J}~~|–––<br>~~ee~~<br>~~J}~~|S<br>~~ee~~<br>~~J}~~|VDS= 50V, ID= 22A|
|~~bs__[Draintosouce~~|~~__[DraintosouceLesageCometJ}~~|–––<br>~~J}~~|–––<br>~~J}~~|25<br>~~J}~~|µA<br>~~J}~~|VDS= 150V, VGS= 0V|
|||–––<br>~~J}~~|–––<br>~~J}~~|250<br>~~J}~~||VDS= 120V, VGS= 0V, TJ= 150°C|
|~~bs __[Draintosouce~~<br>lass <br>~~a~~|Gate-to-Source Forward Leakage<br>~~__[Draintosouce Lesage Comet J}~~<br>~~ee~~|–––<br>~~J}~~<br>~~ee~~<br>~~ee~~|–––<br>~~J}~~<br>~~ee~~|100<br>~~J}~~|nA<br>~~J}~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br> ~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>~~ee~~<br>|-100<br>~~ee~~<br>||VGS= -20V|
|Qg<br>~~a~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>|200<br>~~ee~~<br>|nC|ID= 22A<br>VDS= 120V<br>VGS= 10V, See Fig. 6 and 13<br>~~®~~|
|Qgs<br>~~aeee~~|Gate-to-Source Charge<br>~~eee~~|–––<br>ee<br>~~eee~~|–––<br>~~eee~~|17<br>~~eee~~|||
|Qgd<br>~~eee~~<br>~~a~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~eee~~<br>~~a~~<br>|–––<br>~~eee~~<br>|–––<br>~~eee~~<br>|98<br>~~eee~~<br>|||
|td(on)<br>~~eee~~<br>~~a~~<br>~~a~~<br>a|Turn-On Delay Time<br>~~eee~~<br>~~a~~<br><br>|–––<br>~~eee~~<br><br>ee<br>|12<br>~~eee~~<br><br>ee<br>|–––<br>~~eee~~<br><br>||VDD= 75V<br>ID= 22A<br>RG= 2.5Ω<br>RD= 3.3Ω,See Fig. 10<br>~~®~~<br>®|
|tr<br>~~eee~~<br>~~a~~<br>~~a~~<br>a|Rise Time<br>~~eee~~<br>~~a~~<br>~~ee~~<br>|–––<br>~~eee~~<br>~~ee~~<br>ee<br>|55<br>~~eee~~<br>~~ee~~<br>ee<br>|–––<br>~~eee~~<br>~~ee~~<br>|||
|td(off)<br>a|Turn-Off Delay Time<br>|–––<br>ee<br>|71<br>ee<br>|–––<br>|||
|tf<br>a~~a~~|Fall Time<br>~~a~~|–––<br>ee<br>~~a~~|69<br>ee<br>~~a~~|–––<br>~~a~~|||
|LD<br>~~a~~<br>~~=~~|Internal Drain Inductance<br>~~a~~<br>~~—~~<br>|–––<br>~~a~~<br>~~—~~<br>|4.5<br>~~a~~<br>~~—~~<br>|–––<br>~~a~~<br>~~—~~<br>||Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~@~~|
|~~a~~<br>~~=__[montconmavine~~<br>~~a~~<br>~~a~~|~~a~~<br>~~—~~<br>~~__[montconmavine|~~<br>~~a~~<br>|~~a~~<br>~~—~~<br>~~||~~<br>|~~a~~<br>~~—~~<br>~~r5|—~~<br>|~~a~~<br>~~—~~<br>~~r5|—~~<br>|||
|Ciss<br>~~=__[montconmavine~~<br>~~a~~<br>~~a~~|Input Capacitance<br>~~—~~<br>~~__[montconmavine|~~<br>~~a~~<br>|–––<br>~~—~~<br>~~||~~<br>|2400<br>~~—~~<br>~~r5|—~~<br>|–––<br>~~—~~<br>~~r5|—~~<br>|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~@~~|
|Coss<br>~~= __[montconmavine~~<br>~~a~~<br>~~a ee~~|Output Capacitance<br>~~—~~<br>~~__[montconmavine |~~<br>~~a~~<br>~~ee~~|–––<br>~~—~~<br>~~| | ~~<br>~~ee~~|640<br>~~—~~<br> ~~r5|—~~<br>~~ee~~|–––<br>~~—~~<br>~~r5|—~~<br>~~ee~~|||
|Crss<br>a|Reverse Transfer Capacitance|–––|340|–––|||



## **Source-Drain Ratings and Characteristics** 

|||~~ee~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min.**<br>ee<br>~~ee~~|**Typ. **<br>ee|**Max.**<br>ee|**Units**|**Conditions**|
|IS<br>~~pe~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~ee~~<br>~~pe~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|ee|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~a)~~|
|ISM<br>~~pe~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~pe~~|~~ee~~|~~ee~~|150<br>~~ee~~|||
|VSD<br>~~pe~~<br>~~a~~|Diode Forward Voltage<br>~~pe~~<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.3<br>~~a~~|V<br>~~a~~|TJ= 25°C, IS= 22A, VGS= 0V<br>~~a)~~<br>~~a~~|
|trr<br>~~pe~~<br>~~a~~<br>~~a~~|Reverse Recovery Time<br>~~pe~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|260<br>~~a~~<br>~~a~~|390<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|TJ= 25°C, IF= 22A<br>di/dt = 100A/µs<br>~~a)~~<br>~~a~~<br>~~a®~~|
|Qrr<br>~~pe~~<br>~~a~~<br>~~a~~|Reverse RecoveryCharge<br>~~pe~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|2.2<br>~~a~~<br>~~a~~|3.3<br>~~a~~<br>~~a~~|µC<br>~~a~~<br>~~a~~||



**Notes:** 

o Repetitive rating;  pulse width limited by @ ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,SD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS, 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,≤ 820A/µs, VDD ≤ V(BR)DSS, 820A/µs, VDD ≤ V(BR)DSS,DD ≤ V(BR)DSS,≤ V(BR)DSS, V(BR)DSS,(BR)DSS,, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C 175°C ≤ 175°C 175°C 

@ ISD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,SD ≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,≤ 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS, 22A, di/dt ≤ 820A/µs, VDD ≤ V(BR)DSS,≤ 820A/µs, VDD ≤ V(BR)DSS, 820A/µs, VDD ≤ V(BR)DSS,DD ≤ V(BR)DSS,≤ V(BR)DSS, V(BR)DSS,(BR)DSS,, TJ ≤ 175°C 175°C 

@ VDD = 25V, starting TJ = 25°C, L = 2.4mH RG = 25Ω IAS = 22A. (See Figure 12) 

Pulse width ≤ 300 u s; duty cycle ≤ 2%. 

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## IRFP3415PbF 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V ns 8.0V ee<br>7.0V 7.0V<br>6.0V Pn ee ee 6.0V ee ee<br>5.5V 5.5V<br>RE eee RR eeell<br>BOTTOM 4.5V BOTTOM 4.5V<br>CT TST<br> 100 grea |  100 Le<br>ee ”<br>eea [Jee] 2 eee a ee”2a) ee ee eee<br>OO<br>|  ZA ee ee ee Aoneeee<br>a tT ey 2 4.5V<br>4.5V<br>— >” Antti ll<br>20us PULSE WIDTH 20us PULSE WIDTH<br>T  = 25J oC T  = 175J oC<br> 10  10<br> 1  10  100  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>——————————a<br>oe<br>PiPET Try ry rer<br>T  = 25  CJ °<br> 100 PT———Pit pttt eTtyetTeeeetT T  = 175  CJ Ee ° yyET| [|]<br>ee |i<br>a Z<br>TATEUli tlttre eee<br>V      = 50VDS<br>A c 20µs PULSE WIDTH t<br> 10<br>4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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3.0<br>ID = 37A<br>re<br>2.5 P EPE<br>7<br>2.0<br>P U<br>PEPEDnaEe<br>1.5<br>PEP ae<br>PE yA<br>1.0<br>GE [DEEAGRD>] 400 GE DOERR<br>LA<br>0.5 e etettT Et<br>0.0 PEOa P VGS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction Temperature (  C)J o<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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## IRFP3415PbF 

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6000 20<br>VGS = 0V, f = 1MHz ID = 22A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 120V<br>5000 HH CCrssoss == CCgdds + Cgd 16 Py VVDSDS == 75V 30V of<br>1 pL =e<br>4000<br>PSC Fai a<br>12<br>Ciss<br>RB S Y<br>3000<br>iN hs 4<br>WS ] = 8 obey<br>2000 NON Coss —of<br>re Crss 4 — <4<br>1000<br>FOR TEST CIRCUIT<br>0 Po | EEE 0 pyyo}pei SEE FIGURE        h 13 |<br> 1  10  100 0 40 80 120 160 200<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100 oaSS. ae Dt V7<br> 100 10us<br>= T  = 175  CJ o eS oem totes | |<br> 10 100us<br>SAf SS T  = 25  CJ o  SSS  10 ota ad e 1ms<br> 1<br> TC = 25  Co 10ms<br> TJ = 175  Co<br>Ay V      = 0 V GS  Single Pulse ict cine<br>0.1 Ane on  1 AC H R Ht<br>0.2 0.6 1.0 1.4 1.8  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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## IRFP3415PbF 

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50<br>PEt TET EEE Yes Rp |<br>40<br>eet Et _“’ put.<br>-<br>PLANE EEE .<br>30<br>COUPEE os<br>ERR EENEe mice with ≤ 1<br>≤ 0.1 %<br>20<br>10 SNPET TET ETE TNN Fig 10a. VDS   Switching Time Test Circuit ~<br>90%<br>COC<br>0 PEt TT TET eet tl |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS |\¢ ole >!| «ee|<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 1 ee<br>aa a nlnl<br>D = 0.50<br>e T<br>a ct<br>0.20<br>e e een enalill<br>= |<br>0.1 0.10<br>ae Ba ee re PDM<br>a 0.05 | teatt TY t1<br>0.02 SINGLE PULSE t2<br>a 0.01 7 (THERMAL RESPONSE) e<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ea N l 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFP3415PbF 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>il<br>ee 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~<— tp —><br>/ al<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>e T<br>QGS QGD<br>VG<br>ale a _y<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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1400<br>Wate ID<br>1200 ANP\ffeeeetf TOPBOTTOM 9.0A 16A 22A<br>Nee<br>1000 Pi ft tt yt<br>800 PN<br>NE RNREee<br>600<br>PNP UN | |<br>NONE NESE<br>400 SONNE EEE<br>PT IRAN RK<br>200 Pot AAA A<br>ea Ne<br>PP<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature ( C)J o<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>; :<br>as i D.U.T. +-VDS<br>VGS<br>3mA<br>|<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFP3415PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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D.U.T + Circuit Layout Considerations<br>   • Low Stray Inductance<br>•  Ground Plane<br>•  Low Leakage Inductance<br>(aa) Current Transformer<br>| | -<br>+<br>- - +<br>Ke.<br>00)<br>RG •  dv/dt controlled by RG +<br>ce •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>O) Driver Gate Drive<br>P.W.<br>Period D =<br>rs P.W. | Period<br>VGS=10V<br>a _\<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt a<br>@ D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


- VGS = 5V for Logic Level Devices 

**Fig 14.** For N-Channel HEXFET[®] Power MOSFETs 

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## IRFP3415PbF 

**==> picture [409 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO  035H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line a DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

www.irf.com 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP3415PBF/power-mosfet-n-channel-150-v-43-a-0042-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp3415pbf/mosfet-n-ch-150v-43a-175deg-c/dp/3155140)
---

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