# Power MOSFET, N Channel, 60 V, 120 A, 3300 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:1602243/)

**URL**: https://novapart.co/products/IRFP3306PBF/power-mosfet-n-channel-60-v-120-a-3300-ohm-to
**SKU**: IRFP3306PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4100
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipati

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 220W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 20V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1602243/)

## IRFP3306PbF 

HEXFET ® Power MOSFET 

> **Applications** ° High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ° High Speed Power Switching Hard Switched and High Frequency Circuits 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

> D **VDSS 60V** ~~esee~~ **RDS(on)   typ. 3.3m max. 4.2m** ~~ees~~ 

> G **ID (Silicon Limited) 160A** S **ID (Package Limited) 120A** D S D G **TO-247AC** 

|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



|**Absolute Maximum Ratings**<br>**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>± 20<br>1.5<br>**Max.**<br>160<br>110<br>620<br>120<br>A<br>220<br>14<br>~~aPP~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~>~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|**Absolute Maximum Ratings**<br>**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>± 20<br>1.5<br>**Max.**<br>160<br>110<br>620<br>120<br>A<br>220<br>14<br>~~aPP~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~>~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|**Absolute Maximum Ratings**<br>**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>± 20<br>1.5<br>**Max.**<br>160<br>110<br>620<br>120<br>A<br>220<br>14<br>~~aPP~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~>~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|**Absolute Maximum Ratings**<br>**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>± 20<br>1.5<br>**Max.**<br>160<br>110<br>620<br>120<br>A<br>220<br>14<br>~~aPP~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~>~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|
|---|---|---|---|
|TJ<br>Operating Junction and|-55  to + 175|||
|TSTG<br>Storage Temperature Range|||°C|
|Soldering Temperature, for 10 seconds|300|||
|(1.6mm from case)||||
|Mountingtorque,6-32 or M3 screw<br>**Avalanche Characteristics**<br>~~ae~~|10lb in(1.1N m)|||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>184<br>~~Oe~~||||
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy<br>**Thermal Resistance**<br>~~$$$ $a~~<br>~~es~~|A<br>mJ<br>See Fig. 14, 15, 22a, 22b,<br>~~si~~<br>~~rT~~|||
|**Symbol**<br>**Parameter**<br>RθJC<br>Junction-to-Case<br>RθCS<br>Case-to-Sink,Flat Greased Surface<br>RθJA<br>Junction-to-Ambient<br>~~es~~<br>~~I~~<br>~~es~~<br>~~>Sn~~<br>~~es~~<br>~~es~~<br>~~>~~<br>~~I~~|**Typ.**<br>**Max.**<br>–––<br>0.67<br>0.24<br>–––<br>–––<br>40||**Units**<br>°C/W|



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## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.07<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>3.3<br>4.2<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG<br>Internal Gate Resistance<br>–––<br>0.7<br>–––<br>Ω<br>VGS= 20V<br>VGS= -20V<br>**Conditions**<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 5mA<br>VGS= 10V,ID= 75A<br>VDS= VGS,ID= 150μA<br>VDS= 60V,VGS= 0V<br>VDS= 48V,VGS= 0V,TJ= 125°C<br>~~DQ~~<br>~~GQ~~<br>~~DG~~<br>~~QO~~<br>~~DQ~~<br>~~GQ OO”~~<br>~~RQ~~<br>~~GO~~<br>~~>~~<br>~~DQ~~<br>~~GO~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a ee~~<br>~~a~~<br>~~rs eeee~~<br>~~pe~~<br>~~DG~~<br>~~GO~~|
|---|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>230<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>85<br>120<br>nC<br>Qgs<br>Gate-to-Source Charge<br>–––<br>20<br>–––<br>**Conditions**<br>VDS= 50V,ID= 75A<br>ID= 75A<br>VDS=30V<br>~~DG~~<br>~~GQ~~<br>~~RG~~<br>~~GQ~~<br>~~Rsa~~|
|Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>26<br>Qsync<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>59<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>15<br>–––<br>ns<br>tr<br>Rise Time<br>–––<br>76<br>–––<br>ID= 75A<br>VGS= 10V<br>VDD= 30V<br>ID= 75A,VDS=0V,VGS= 10V<br>~~ee~~<br>~~®~~<br>~~RG~~<br>~~GG~~<br>~~Rs~~<br>~~a~~|
|td(off)<br>Turn-Off DelayTime<br>–––<br>40<br>–––<br>RG= 2.7Ω<br>~~a~~|
|tf<br>Fall Time<br>–––<br>77<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>4520<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>500<br>–––<br>VGS= 10V<br>VGS= 0V<br>VDS= 50V<br>~~a~~<br>®<br>~~Rs~~<br>~~a~~|
|Crss<br>Reverse Transfer Capacitance<br>–––<br>250<br>–––<br>ƒ= 1.0MHz,See Fig. 5<br>~~a~~|
|Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)–––<br>720<br>–––<br>VGS= 0V,VDS= 0V to 48V<br>,See Fig. 11<br>~~a~~|
|Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>880<br>–––<br>VGS= 0V,VDS= 0V to 48V<br>~~a>)~~|



## **Diode Characteristics** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~en~~|Continuous Source Current<br>(Body Diode)<br>|–––<br>|–––<br>|160<br>|A<br>|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>|
|ISM<br>~~en~~|Pulsed Source Current<br>(Body Diode)<br>|–––<br>|–––<br><br>~~GQ~~|620<br><br>~~GQ~~|A<br><br>~~GQ~~||
|VSD<br>~~enDQ~~|Diode Forward Voltage<br>~~DQ~~|–––<br>~~DQ~~|–––<br>~~DQ~~<br>~~GQ~~|1.3<br>~~DQ~~<br>~~GQ~~|V<br>~~DQ~~<br>~~GQ~~|TJ= 25°C,IS= 75A,VGS= 0V<br>~~DQ~~|
|trr<br>~~DQ~~<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>~~DQ~~<br>~~ee~~<br>~~|~~<br>~~ee~~|–––<br>~~DQ~~<br>~~ee~~<br>~~|~~|31<br>~~DQ~~<br>~~GQ~~<br>~~ee~~<br>|~~DQ~~<br>~~GQ~~<br>~~ee~~<br>|ns<br>~~DQ~~<br>~~GQ~~<br>~~ee~~|TJ= 25°C<br>VR= 51V,<br>TJ= 125°C<br>IF= 75A<br>TJ= 25°C<br>di/dt = 100A/μs<br>TJ= 125°C<br>TJ= 25°C<br>~~DQ~~<br>~~'~~<br>|
|||–––<br>~~ee~~<br>~~|~~~~**|**~~|35<br>~~ee~~<br>~~**|**~~|~~ee~~<br>~~**|**~~|||
|Qrr<br>~~ee~~<br>~~ee~~<br>~~Rs~~|Reverse Recovery Charge<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>|–––<br>~~ee~~<br>~~|~~~~**|**~~<br>~~|~~|34<br>~~ee~~<br>~~**|**~~|~~ee~~<br>~~**|**~~|nC<br>~~ee~~<br>||
|||–––<br>~~**|**~~<br>~~|~~<br>|45<br>~~**|**~~<br>|~~**|**~~<br>|||
|IRRM<br>~~ee~~<br>~~Rs~~|Reverse RecoveryCurrent<br><br>~~ee~~<br>~~|~~<br>|–––<br>~~**|**~~<br>~~|~~<br>|1.9<br>~~**|**~~<br>|–––<br>~~**|**~~<br>|A<br>||
|ton<br>~~ee~~<br>~~RsRG~~|Forward Turn-On Time<br><br>~~ee~~<br>~~RG~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~**|**~~<br>~~'~~<br>~~RG~~|||||



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with 

ISD ≤ 75A, di/dt ≤ 1400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Coss eff. (TR) is a fixed capacitance that gives the same charging time 

some lead mounting arrangements. as Coss while VDS is rising from 0 to 80% VDSS. 

@® Repetitive rating;  pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as temperature. Coss while VDS is rising from 0 to 80% VDSS. ® Limited by TJmax, starting TJ = 25°C, L = 0.04mH When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom RG = 25Ω, IAS = 96A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994. above this value . @R θ is measured at T, approximately 90°C 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom mended footprint and soldering techniques refer to application note #AN-994. 

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1000<br>VGS am<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>5.5V ATE Ll Ll<br>5.0V B74 ean!<br>4.8V<br>BOTTOM 4.5V<br>100<br>4.5V<br>Bay)  aoe<br>≤ 60μs PULSE WIDTH 60μs PULSE WIDTH<br>Tj = 175°C<br>10 Allll TH<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 75AD = 75A= 75A<br>VGS = 10VGS = 10V= 10V<br>2.0 oO LELLLELD<br>ELLA<br>1.5<br>y ne<br>1.0 ELA<br>ATLL ELL |  ELL<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS TT com VGS am<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>5.5V A 5.5V ATE Ll Ll<br>5.0V [- 5.0V B74 ean!<br>4.8V 4.8V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100 100<br>4.5V<br>Sy 7 eemniiiliseaulil 4.5V Bay)  aoe<br>Y//\/<br>≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH 60μs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>10 Ai ALU 10 Allll TH<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.5<br>ID = 75AD = 75A= 75A<br>VGS = 10VGS = 10V= 10V<br>100 | TJ = 175°C LAr 2.0 oO LELLLELD<br>ee ee 4 ee ee ee<br>10 ILA ELLA<br>1.5<br>{Ay ee 0 ee | TJ = 25°C es || | ee ee y ne<br>1<br>PP | 1.0 ELA<br>ie VDS = 25V |<br>≤ 60μs PULSE WIDTH<br>0.1 fp ATLL ELL<br>0.5<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>Fig 3.   Typical Transfer Characteristics<br>8000 20<br>VGS   = 0V,       f = 1 MHZ ID= 75A<br>6000 T CCCiss rss   oss     = C = C= C T gs  ds  gd + C+ Cgd gd ,  Cds SHORTED ] 16 Po, Ge | f VVDS= 30VVDS= 12VDS= 48V Te<br>Ciss<br>12<br>Br it is!<br>4000<br>sae en<br>8<br>ioe || ee<br>2000<br>4<br>Coss ae<br>S11)\/Mt| in =” L 7 |<br>Crss<br>Ba ee 0<br>0<br>0 20 40 60 80 100 120 140<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100<br>TJ = 175°C<br>F ATT<br>10 TJ = 25°C<br>AR<br>1<br>pf fe<br>VGS = 0V<br>/eAInAa LEE<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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180<br>160<br>Limited By Package<br>Eae e<br>140<br>120 a<br>100 P| | R E<br>80 P | | P N<br>60<br>pop | IN<br>ee<br>40<br>20 P | ae<br>0 P| | EE| rT IE N<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

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1.5<br>1.0<br>0.5<br>wea<br>ne<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100 pe aay 1m sec 10 0μsec eg |<br>1 0m sec<br>10<br>1 Tc = 25°C EHH et e<br>Tj = 175°C DC<br>Single Pulse<br>ee e ll<br>0.1<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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80<br>ID = 5mA<br>70<br>60<br>50<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>800<br>                 I D<br>TOP          13A<br>                18A<br>600 BOTTOM   96A<br>400<br>200<br>NNER<br>PSN SS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1<br>Se eeeeSee<br>D = 0.50<br>0.20<br>0.1 a | | |<br>0.10<br>0.05<br>0.02<br>0.01 R 1 R 2<br>—, 0.01 er τJ τJ R1 R2 τC PA Ri (°C/W) τι (sec)<br>τ1 τ1 τ2 τ2 0.249761 0.00028<br>0.001 SINGLE PULSE Ci= τi/Ri 0.400239 0.005548<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>aie<br>0.0001<br>1E-006 1E-005 0.0001 || 0.001  cami 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  ΔTj = 150°C and<br>0.01 Tstart =25°C (Single Pulse)<br>PTT SSE NE Ev<br>N T 0.05 E PN TE TT<br>10 0.10<br>PTT SUPA | TTL LE<br>Pr, SSR ORR<br>{71| ISS ee ee<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>1 Ce rcrae! | (tell<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>200 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>160 I D  = 96A Purely a thermal phenomenon and failure occurs at a temperature far in<br>NP excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>120 N X NT 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>during avalanche).<br>80 LPNNO \ IN  TEE 6. Iav = Allowable avalanche current.<br>7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 14, 15).<br>40 TLLENWNIL tav = Average time in avalanche.<br>D = Duty cycle in avalanche =  tav ·f<br>NAL ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>PEELE UNI<br>0<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav =av == 2 A T/ [1.3·BV·Zth]th]]<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav =av == 2** A **T/ [1.3·BV·Zth]th]] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.5<br>ID = 1.0A<br>4.0 I D  = 1.0mA<br>ID = 250μA<br>3.5 ID = 150μA<br>reyLPP<br>3.0<br>SS<br>2.5<br>CPST<br>BERRERANNG<br>2.0<br>1.5<br>Tit TTT TNSSA<br>CCT TTS<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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16<br>12<br>= TTra<br>8 Leer<br>a<br>IF = 30A<br>4<br>VR = 51V<br>v e BA TJ = 125°C<br>TJ =  25°C<br>0 a<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage Vs. Temperature 

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16 350<br>300<br>12<br>Fa 250 YA<br>TO = BERR REEP A<br>200<br>8 Leer auBRREY<br>2 150 4m<br>ann ¢  Y<br>4 , [LA] can IF = 45A 100 Sanp74nee | ttt ( r ay IF = 30A<br>VR = 51V VR = 51V<br>TJ = 125°C  50 T J  = 125°C<br>TJ =  25°C TJ =  25°C<br>0 on 0 Pitt |<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>|} = HERE<br>dif / dt - (A / μs) dif / dt - (A / μs)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br>


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350<br>300<br>250 BERRY<br>BRRREEES<br>200 WA<br>150 BREEZE<br>100 ptt |bet IF = 45A<br>VR = 51V<br>50 tttVg [|] T J  = 125°C  tt |<br>TJ =  25°C<br>PLL | | |<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + [{ P.W. | n d — Period<br>) [©)]    •  CircuitLow LayoutStray InductConsiderations lt V | GS=10V<br> •<br>-  •   Low Leakage Inductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 = VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( aA •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test es ae<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" iO) t<br>* Veg = 5V for Logic Level Devices<br>Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V < tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω IAS<br>**----- End of picture text -----**<br>


## **Fig 22a.** Unclamped Inductive Test Circuit 

## **Fig 22b.** Unclamped Inductive Waveforms 

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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1μs<br>Duty Factor < 0.1%<br>  Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2μF<br>.3μF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>Wn IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


## **Fig 23a.** Switching Time Test Circuit 

**Fig 24a.** Gate Charge Test Circuit 

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V<br>DS<br>90%<br>10%<br>V<br>GS<br>1<br>yay 1<br>td(on) tr td(off) tf<br>Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>\ g- pl g-_ p l w i s > !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>indicates "Lead-Free" LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC packages are not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/08 

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## **IMPORTANT NOTICE** 

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With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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