# Power MOSFET, N Channel, 60 V, 120 A, 2400 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:1602242/)

**URL**: https://novapart.co/products/IRFP3206PBF/power-mosfet-n-channel-60-v-120-a-2400-ohm-to
**SKU**: IRFP3206PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2600
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Tes; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 280W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 2400µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1602242/)

HEXFET ® Power MOSFET 

## IRFP3206PbF 

> **Applications** . High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching : Hard Switched and High Frequency Circuits 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

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D VDSS 60V<br>eeee<br>RDS(on)   typ. 2.4m<br>Oo               max. -E 3.0m<br>G ID (Silicon Limited) 200A<br>ee<br>S ID (Package Limited) 120A<br>D<br>S<br>D<br>G<br>TO-247AC<br>**----- End of picture text -----**<br>


|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

|**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>**Max.**<br>200<br>140<br>840<br>120<br>1.9<br>A<br>280<br>5.0<br>± 20<br>~~a~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~as >~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>**Max.**<br>200<br>140<br>840<br>120<br>1.9<br>A<br>280<br>5.0<br>± 20<br>~~a~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~as >~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>**Max.**<br>200<br>140<br>840<br>120<br>1.9<br>A<br>280<br>5.0<br>± 20<br>~~a~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~as >~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~©~~<br>~~Se~~|
|---|---|---|
|TJ<br>Operating Junction and|-55  to + 175||
|TSTG<br>Storage Temperature Range||°C|
|Soldering Temperature, for 10 seconds|300||
|(1.6mm from case)|||
|Mountingtorque,6-32 or M3 screw<br>**Avalanche Characteristics**<br>~~es~~|10lb in(1.1N m)||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy<br>**Thermal Resistance**<br>~~es~~<br>~~I~~<br>~~a~~<br>~~es~~|170<br>See Fig. 14, 15, 22a, 22b,<br>~~i~~|mJ<br>A<br>mJ<br>~~rT~~|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>0.54<br>RθCS<br>Case-to-Sink,Flat Greased Surface<br>0.24<br>–––<br>°C/W<br>RθJA<br>Junction-to-Ambient<br>–––<br>40<br>~~asnN~~<br>~~as~~<br>~~>Pn~~<br>~~as~~<br>~~es~~|||
|www.irf.com||1|



3/3/08 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>~~aQQ~~|
|---|
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250μA<br>~~aQQ~~|
|ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.07<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>2.4<br>3.0<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Reference to 25°C,ID= 5mA<br>VGS= 10V,ID= 75A<br>VDS= VGS,ID= 150μA<br>~~aQQ~~<br>~~Pe~~<br>~~a GQ~~|
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG<br>Internal Gate Resistance<br>–––<br>0.7<br>–––<br>Ω<br>VDS=60V,VGS= 0V<br>VDS= 48V,VGS= 0V,TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~i~~<br>~~a~~<br>~~a De~~<br>~~_—————————————_————eEE~~<br>~~QQ~~<br>~~IGQ~~|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>~~aQQ~~|
|gfs<br>Forward Transconductance<br>210<br>–––<br>–––<br>S<br>VDS= 50V,ID= 75A<br>~~aQQ~~|
|Qg<br>Total Gate Charge<br>–––<br>120<br>170<br>nC<br>ID= 75A<br>~~a ee~~|
|Qgs<br>Gate-to-Source Charge<br>–––<br>29<br>–––<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>35<br>Qsync<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>85<br>–––<br>VGS= 10V<br>ID= 75A,VDS=0V,VGS= 10V<br>VDS=30V<br>~~a ee~~<br>~~a~~<br>~~ee~~<br>~~®~~<br>~~IQQ 6~~|
|td(on)<br>Turn-On DelayTime<br>–––<br>19<br>–––<br>ns<br>VDD= 30V<br>~~a ee~~|
|tr<br>Rise Time<br>–––<br>82<br>–––<br>ID= 75A<br>~~a ee~~|
|td(off)<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>tf<br>Fall Time<br>–––<br>83<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>6540<br>–––<br>pF<br>RG=2.7Ω<br>VGS= 10V<br>VGS= 0V<br>~~a ee~~<br>~~a~~<br>~~ee~~<br>~~®~~<br>~~a ee~~|
|Coss<br>Output Capacitance<br>–––<br>720<br>–––<br>VDS= 50V<br>~~a ee~~|
|Crss<br>Reverse Transfer Capacitance<br>–––<br>360<br>–––<br>ƒ= 1.0MHz,See Fig.5<br>~~a ee~~|
|Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)–––<br>1040<br>–––<br>VGS= 0V,VDS= 0V to 48V<br>,See Fig.11<br>~~a ee~~|
|Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>1230<br>–––<br>**Diode Characteristics**<br>VGS= 0V,VDS= 0V to 48V<br>~~a>)~~|



|**Symbol**<br>~~a~~|**Parameter**<br>~~DG~~|**Min. **<br>~~DG~~|**Typ. **<br>|**Max. **<br>~~OC~~|**Units**<br>~~OC~~|**Conditions**<br>~~OC~~|
|---|---|---|---|---|---|---|
|IS<br>~~a ~~<br>~~en~~|Continuous Source Current<br>(Body Diode)<br> ~~DG~~|–––<br>~~DG ~~|–––<br>|200<br> ~~OC~~|A<br>~~OC~~|S<br>D<br>G<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>showing  the<br>~~OC~~<br>~~QO~~|
|ISM<br>~~en~~<br>~~ee~~|Pulsed Source Current<br>(Body Diode)|–––|–––|840<br>~~QO~~|A<br>~~QO~~||
|VSD<br>~~en~~<br>~~a~~<br>~~ee~~|Diode Forward Voltage<br>~~eG~~|–––<br>~~eG~~|–––<br>~~eG~~|1.3<br>~~eG~~<br>~~QO~~|V<br>~~eG~~<br>~~QO~~|TJ= 25°C,IS= 75A,VGS= 0V<br>~~eG~~<br>~~QO~~|
|trr<br>~~a~~<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>~~eG~~|–––<br>~~eG~~|33<br>~~eG~~<br>~~**a**~~|50<br>~~eG~~<br>~~QO~~|ns<br>~~eG~~<br>~~QO~~|TJ= 25°C<br>VR= 51V,<br>TJ= 125°C<br>IF= 75A<br>TJ= 25°C<br>di/dt = 100A/μs<br>TJ= 125°C<br>TJ= 25°C<br>~~eG~~<br>~~QO~~|
|||–––<br>~~a~~|37<br>~~a~~<br>~~**a**~~|56<br>~~QO~~<br>~~a~~|||
|Qrr<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse Recovery Charge<br>|–––<br>~~a~~<br>|41<br>~~a~~<br>~~**a**~~<br>|62<br>~~QO~~<br>~~a~~<br>|nC<br>~~QO~~<br>||
|||–––<br>~~a~~<br><br>~~GG~~|53<br>~~**a**~~<br>~~a~~<br><br>~~GG~~|80<br>~~QO~~<br>~~a~~<br>|||
|IRRM<br>~~ee~~<br>~~a DR~~<br>~~a~~|Reverse RecoveryCurrent<br>~~DR~~|–––<br>~~a~~<br>~~DR~~<br>~~GG~~|2.1<br>~~**a**~~<br>~~a~~<br>~~DR~~<br>~~GG~~|–––<br>~~a~~<br>~~DR~~|A<br>~~DR~~||
|ton<br>~~ee~~<br>~~a DR~~<br>~~a~~|Forward Turn-On Time<br>~~DR~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~**a**~~<br>~~DR~~<br>~~GG~~|||||



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

Repetitive rating;  pulse width limited by max. junction temperature. 

Limited by TJmax, starting TJ = 25°C, L = 0.023mH 

ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Coss eff. (TR) is a fixed capacitance that gives the same charging time 

as Coss while VDS is rising from 0 to 80% VDSS. 

Coss eff. (ER) is a fixed capacitance that gives the same energy as 

Coss while VDS is rising from 0 to 80% VDSS.. 

θ 

RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use above this value . 

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1000<br>VGS<br>TOP           15V Pat er<br>10V<br>8.0V<br>6.0V<br>|<br>5.5V<br>5.0V<br>4.8V Be<br>BOTTOM 4.5V meennllll<br>100<br>Veen mall<br>4.5V ≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>10 tty To cul<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000 rn<br>100 pee age<br>TJ = 175°C<br>ee ey ee ee ee ee<br>10 ff<br>1A] | ft<br>TJ = 25°C<br>ee<br>1<br>ef tt<br>VDS = 25V<br>≤ 60μs PULSE WIDTH<br>0.1<br>Lt<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>Fianee<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V Tem<br>10V<br>8.0V<br>6.0V<br>5.5V Zot<br>5.0V<br>4.8V || I<br>BOTTOM 4.5V ern oH<br>100<br>Bil Aleman 4.5V<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>10 Alliage<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 75A<br>VGS = 10V<br>LLL<br>2.0 ALLL ELLA<br>1.5 AC<br>pra<br>1.0 ALLELE<br>ATH ELLE<br>0.5<br>-60 -40 Hf -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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12000 20<br>VGS   = 0V,       f = 1 MHZ ID= 75A<br>10000 ] C C iss  rss     = C  = C gs  gd  + Cgd,  Cds SHORTED 16 en VVDS= 30VDS= 48V<br>Coss  = Cds + Cgd VDS= 12V<br>8000<br>a L —| | {1{I Ciss of tT ttt 12 | — | Lf |<br>6000<br>to III a Aa<br>8<br>4000<br>CA fe<br>4<br>2000 Coss<br>Bast Lt An ee<br>Crss<br>0<br>HH Te<br>0 || fj | | |<br>0 40 80 120 160 200<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>Saanpee oe<br>100 TJ = 175°C<br>A<br>—<br>10 TJ = 25°C<br>1<br>VGS = 0V<br>0.1<br>fib EEEeoee<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode<br>Forward Voltage<br>240<br>LIMITED BY PACKAGE<br>200<br>Seaene<br>160<br>sann n<br>120<br>TTT :<br>80<br>40 Pp; yy NCTN<br>0 DEEN<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs.<br>Case Temperature<br>2.0<br>1.5<br>BRRRED.<br>1.0 Bane<br>WA<br>0.5<br>EEpZan<br>0.0 pZannn<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>ID , Drain Current (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>ooo<br>LIMITED BY R DS(on)<br>1000 =epete)<br>rol te<br>100 1 ms ec 10 0μsec<br>10 m sec<br>10<br>1<br>Tc = 25°C<br>Tj = 175°C D C<br>Single Pulse<br>0.1<br>Se<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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Fig 8.   Maximum Safe Operating Area<br>**----- End of picture text -----**<br>


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80<br>ID = 5mA<br>75<br>TL<br>70<br>LAT<br>65<br>PAT<br>60<br>LLLpa<br>ECE<br>55<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>800<br>                 I D<br>TOP          21A<br>                33A<br>600 BOTTOM   120A<br>Nee<br>400 A<br>\<br>200<br>SASEEE<br>TSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1<br>D = 0.50<br>TTT TL. a)<br>0.1 Sp 0.20 eiimseere<br>0.10<br>0.05<br>= [poor] = ——— aanetll [er] Ell<br>ee ee |<br>0.01 0.02 R1 R1 R2 R2 R3 R 3 Ri ( ° C/W) τι (sec)<br>e 0.01 e τJ τJ τCτ PT 0.11493 0.0001<br>| ie SINGLE PULSE e e eee F τ1Ci= τ1Ci=  a τi/τRi p i/Ri 4 τ2 τ2 ae τ3 τ3 0.2180280.206197 0.0012620.011922 |<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>PE 2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000 ee ee ee ee | ee  ee ee ee<br>PEEP Duty Cycle = Single Pulse PNP PERI Allowed avalanche Current vs avalanche  FEATE EEE<br>ri tee Rd pulsewidth, tav, assuming  ΔTj = 150°C and  WALT<br>100 Tstart =25°C (Single Pulse)<br>il 0.01  Ph<br>PT ESO eg |<br>a PIRSA EET ETT<br>0.05<br>10 =H PE 0.10 HESS TOAST HELTAH<br>es 17 fae TIP SET<br>Allowed avalanche Current vs avalanche<br>rr — — ~ eek ee ee |<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>aii Steal<br>1 re e<br>| EI<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>200 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>160 I D  = 120A Purely a thermal phenomenon and failure occurs at a temperature far in<br>excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>tt<br>120 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>S\SUEnEEEEEE<br>during avalanche).<br>80 6. Iav = Allowable avalanche current.<br>7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>HSA<br>25°C in Figure 14, 15).<br>40 LLLENNUEEE tav = Average time in avalanche.<br>D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>rane<br>0<br>LETTEENN<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav =av == 2 A T/ [1.3·BV·Zth]th]]<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav =av == 2** A **T/ [1.3·BV·Zth]th]] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.5<br>ID = 1.0A<br>4.0 PTEEE I Ep. D  = 1.0mA<br>3.5 PA IID = 150μAD = 250μA<br>3.0<br>SS PS<br>2.5<br>tT PSST AS<br>2.0<br>tit tT TSS<br>1.5<br>CTTTTTTTANS<br>1.0 EERE EREEAa N<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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18<br>16<br>Pt tT tT tT tT tT<br>14<br>Pt ET TT be<br>12<br>10<br>CT eer<br>8<br>Bane 4ne<br>6<br>tot IF = 30A<br>4 V R  = 51V<br>2 HC T J  = 125°C<br>TJ =  25°C<br>eTPTT | | | | ||<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage Vs. Temperature 

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18<br>16<br>ptt tt tt tt<br>14<br>Sera ee<br>12<br>oaeeneae<br>10 Pt Tt | eee<br>8<br>Sann>7Z600<br>6<br>EL IF = 45A<br>4 V R  = 51V<br>2 T J  = 125°C<br>wT | | | | |<br>TJ =  25°C<br>0<br>PTT<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


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350<br>300<br>BERR<br>250<br>ett<br>ae<br>200<br>CCAaia a<br>150 EERERSZAE<br>100 eee IF = 30A<br>VR = 51V<br>50 T J  = 125°C<br>i<br>TJ =  25°C<br>0<br>Pitt ly |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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350<br>300<br>250 BRR RRREE<br>200 BERRA<br>wi Z|<br>150<br>SERED)20<br>100 IF = 45A<br>|e VR = 51V<br>50 T J  = 125°C<br>TJ =  25°C<br>PET<br>0<br>100 200 300 400 500 600 700 800 = 900 1000<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + [{ P.W. | n d — Period<br>) [©)]    •  CircuitLow LayoutStray InductConsiderations lt V | GS=10V<br> •<br>-  •   Low Leakage Inductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 = VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( aA •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test es ae<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" iO) t<br>* Veg = 5V for Logic Level Devices<br>Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V < tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω IAS<br>**----- End of picture text -----**<br>


## **Fig 22a.** Unclamped Inductive Test Circuit 

## **Fig 22b.** Unclamped Inductive Waveforms 

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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1μs<br>Duty Factor < 0.1%<br>  Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2μF<br>.3μF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>Wn IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


## **Fig 23a.** Switching Time Test Circuit 

**Fig 24a.** Gate Charge Test Circuit 

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V<br>DS<br>90%<br>10%<br>V<br>GS<br>1<br>yay 1<br>td(on) tr td(off) tf<br>Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>\ g- pl g-_ p l w i s > !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO p  135H i<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>indicates "Lead-Free" LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC packages are not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/08 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irfp3206pbf/mosfet-n-to-247ac/dp/1602242)
---

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