# Power MOSFET, N Channel, 75 V, 120 A, 3300 µohm, TO-247AC, Through Hole
**URL**: https://novapart.co/products/IRFP3077PBF/power-mosfet-n-channel-75-v-120-a-3300-ohm-to
**SKU**: IRFP3077PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9200
**Stock**: 100+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0028ohm; Rds(on) Tes; Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 340W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 20V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1602241/)
## IRFP3077PbF
## **Applications**
High Efficiency Synchronous Rectification in SMPS ; Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits ° **Benefits** Worldwide Best R in TO-247 DS(on) Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
HEXFET ® Power MOSFET
||HEXFET
Power MOSFET
®|Power MOSFET|
|---|---|---|
|S
D
G|**VDSS**
~~ee~~
~~Oo~~|**75V**
~~e~~|
||**RDS(on) typ.**
**max.**
~~ee~~
~~Oo~~|**2.8m**
~~e~~|
|||**3.3m**|
||**ID (Silicon Limited)**
~~Oo~~|**200A**|
||**ID (Package Limited)**|**120A**|
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D
S
D
G
TO-247AC
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|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|
## **Absolute Maximum Ratings**
|**Symbol**
**Parameter**
**Units**
ID@ TC= 25°C
Continuous Drain Current, VGS@ 10V(Silicon Limited)
A
ID@ TC= 100°C
Continuous Drain Current, VGS@ 10V(Silicon Limited)
ID@ TC= 25°C
Continuous Drain Current, VGS@ 10V(Wire Bond Limited)
IDM
Pulsed Drain Current
PD@TC= 25°C
Maximum Power Dissipation
W
Linear DeratingFactor
W/°C
VGS
Gate-to-Source Voltage
V
dV/dt
Peak Diode Recovery
V/ns
**Max.**
200
120
850
140
340
2.5
± 20
2.3
~~a~~
~~es~~
~~es~~
~~es~~
~~es~~
~~>~~
~~esGO~~
~~a GO~~
~~esGO~~
~~es~~
~~©Sn~~
~~GO~~|
|---|
|TJ
Operating Junction and
°C
-55 to + 175|
|TSTG
Storage Temperature Range|
|Soldering Temperature, for 10 seconds
300|
|(1.6mm from case)|
|Mountingtorque,6-32 or M3 screw
10lb in(1.1N m)
~~Pf~~|
|**Avalanche Characteristics**|
|EAS(Thermallylimited)
Single Pulse Avalanche Energy
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
**Thermal Resistance**
200
See Fig. 14, 15, 22a, 22b,
~~Pe~~
~~Oe~~
~~——~~
~~sees~~
~~PlOe~~
~~rT~~|
|**Symbol**
**Parameter**
**Typ.**
**Max.**
**Units**
RθJC
Junction-to-Case
–––
0.44
RθCS
Case-to-Sink,Flat Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
~~a~~
~~ae~~
~~>Pe~~
~~esnS~~
~~I~~
~~as~~
~~>~~
~~nS~~|
|www.irf.com
1|
3/3/08
**Static @ TJ = 25°C (unless otherwise specified)**
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|GG|Symbol|Parameter|Min.|Typ|QC|.|Max.|Units|Conditions|
|GQ|V(BR)DSS|Drain-to-Source Breakdown Voltage|75|–––|–––|V|VGS = 0V, ID = 250μA|
|aPO|ΔRVDS(BR(on))DSS/ΔTJ|eC|Breakdown VoltaStatic Drain-to-Source On-Resistancege Temp. Coefficient|––––––|GQ|0.0912.8|QC|–––3.3|V/°CmΩ|QO|VReference to 25°CGS = 10V, ID = 75A , ID = 5mA|
|GQ|VGS(th)|Gate Threshold Voltage|2.0|–––|QO|4.0|V|VDS = VGS, ID = 250μA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS = 75V, VGS = 0V|
|–––|–––|250|VDS = 75V, VGS = 0V, TJ = 125°C|
|ee|IGSS|Gate-to-Source Forward Leakage|a|–––|–––|100|[ee]|nA|VGS = 20V|
|———————————_—————eEEQQ|Gate-to-Source Reverse Leakage|–––|–––|-100|VGS = -20V|
|GG|RG|Gate Input Resistance|–––|1.2|GG|–––|Ω|f = 1MHz, open drain|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|GQ|Symbol|Parameter|Min.|Typ.|Max.|Units|Conditions|
|a|gfs|Forward Transconductance|GO|160|GQ|–––|QO|–––|Oe|S|VDS = 50V, ID = 75A|
|a|Qg|Total Gate Charge|–––|160|220|nC|ID = 75A|
|Qgs|Gate-to-Source Charge|–––|37|–––|VDS = 38V|
|Rsa|Qgd|Gate-to-Drain ("Miller") Charge|–––|42|–––|VGS = 10V|
|a|td(on)|Turn-On Delay Time|–––|25|–––|ns|VDD = 38V|
|a|tr|Rise Time|–––|87|–––|ID = 75A|
|td(off)|Turn-Off Delay Time|–––|69|–––|RG = 2.1Ω|
|Rsa|tf|Fall Time|–––|95|–––|VGS = 10V|®|
|Ciss|Input Capacitance|–––|9400|–––|pF|VGS = 0V|
|Rsa|Coss|Output Capacitance|–––|820|–––|VDS = 50V|
|a|Crss|Reverse Transfer Capacitance|–––|350|–––|ƒ = 1.0MHz|
|a|Coss eff. (ER)|Effective Output Capacitance (Energy Related)|–––|1090|–––|VGS = 0V, VDS = 0V to 60V|, See Fig.11|
|©|Coss eff. (TR)|Effective Output Capacitance (Time Related)|–––|1260|–––|VGS = 0V, VDS = 0V to 60V|, See Fig. 5|
|Diode Characteristics|
|QQ|Symbol|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|200|A|MOSFET symbol|D|
|ee|(Body Diode)|CO|showing the|
|ISM|Pulsed Source Current|–––|–––|850|integral reverse|G|
|ao|(Body Diode)|||p-n junction diode.|8|S|
|GG|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ = 25°C, IS = 75A, VGS = 0V|
|trr|Reverse Recovery Time|–––|42|63|ns|TJ = 25°C|VR = 64V,|
|a|–––|50|QC|75|TJ = 125°C|IF = 75A|
|Qrr|Reverse Recovery Charge|||–––|59|89|nC|TJ = 25°C|di/dt = 100A/μs|
|a|–––|86|130|TJ = 125°C|
|aee|IRRM|GG|Reverse Recovery Current|||–––|2.5|–––|A|TJ = 25°C|
|a|ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
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Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
θ
Limited by TJmax, starting TJ = 25°C, L = 0.028mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use above this value .
> ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
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1000
VGS nn ||
TOP 15V A
10V
8.0V
6.0V
fa
5.5V ||
5.0V fo
4.8V
BOTTOM 4.5V 4.5V
100 s ai
SA
i
YAAI an|
≤ 60μs PULSE WIDTH
Tj = 175°C
10 YiAA
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 75AD = 75A= 75A
VGS = 10VGS = 10V= 10V
2.0
)3=6 osPeHAPeHAHA
1.5
HL A
1.00.5 dey ATTTTTT FT]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
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1000
Toa
VGS
FE AE TOP 15V
10V
8.0V
SS etilizaail 6.0V
nn! 5.5V
Zon 5.0V
4.8V
f BOTTOM 4.5V
fot
100
Za all 4.5V Ball
4
≤ 60μs PULSE WIDTH
Tj = 25°C
SUN
10 unl
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
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Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1000 2.5
ID = 75AD = 75A= 75A
VGS = 10VGS = 10V= 10V
2.0
100 / TA /A T] )3=6 osPeHAPeHAHA
TJ = 175°C
1.5
10 TJ = 25°C
f/oeee HL A
VDS = 25V
≤ 60μs PULSE WIDTH
1
fi| 0.51.00.5 dey ATTTTTT FT]
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
16000 20
VCCGS iss rss = C = C = 0V, f = 1 MHZgs gd + Cgd, Cds SHORTED 16 a ID= 75A VVDS= 38VDS= 60V
12000 C oss = C ds + C gd VDS= 17V
Ciss
12
8000 teenTio a RaS AneE
8
a Sane” Aan
alll YA Z
4000
4
SL Baal Coss
Crss
0
0 REL fiij| | | | |
0 40 80 120 160 200 240 280
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
)(Α
ID, Drain-to-Source Current
RDS(on) , Drain-to-Source On Resistance (Normalized)
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**Fig 4.** Normalized On-Resistance vs. Temperature
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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1000.0
a
TJ = 175°C
100.0 ae a
10.0
SS TJ = 25°C
1.0
VGS = 0V
0.1 Pope
0.0 0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
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**Fig 7.** Typical Source-Drain Diode Forward Voltage
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240
LIMITED BY PACKAGE
200 Pt
160
me
120 ESS }
80 CCoP NE
40 {| tt tN
0 CON
25 50 75 100 125 150 175
TC , Case Temperature (°C)
ID , Drain Current (A)
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**Fig 9.** Maximum Drain Current vs. Case Temperature
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3.0
2.5
Pit itl ey
2.0 Pit
Lt Ys
1.5
Pitt AL
1.0
0.5
Ea Aneee
0.0 PZGnane
0 20 40 60 80
VDS, Drain-to-Source Voltage (V)
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**Fig 11.** Typical COSS Stored Energy
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10000
OPERATION IN THIS AREA
al. LIMITED BY R DS(on)
1000
oo rth
100 μsec
10msec
100
10 LIMITED BY PACKAGE 1 m sec
Sanesiameallll ma g i
1 Tc = 25°C DC
Tj = 175°C
Single Pulse
0.1 E84
0.1 1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
ID, Drain-to-Source Current (A)
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**Fig 8.** Maximum Safe Operating Area
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100
LPL
90
EL ELLE
Tit TL | ee
80 {LBA
py AT
ar
70
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
1000
I D
TOP 22A
800 Pf 40A
BOTTOM 120A
|
600 Nee
400 PAT TPT
200
aN
0 OR SAL
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Avalanche Energy (mJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage
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**Fig 10.** Drain-to-Source Breakdown Voltage
**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent
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TOR Rectifier
1
TM D = 0.50 mee
0.1
0.20
0.10
St rR
0.05 TT ArT E R EE
0.01 0.02 0.01 oe | τJ τJ ee τ1 τ1 R1 R1 τ2 τR22 R2 Rτ33Rτ33 τCτ Ri (0.0838890.190848 es °C/W) 0.0000830.000995τι (sec) |
em55tt e e |||| Ci= Ci= caY τi/τRii/Ri y y es 0.165682 0.007038 |
0.001 SINGLE PULSE
pH ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
ee 2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Se as eT es ET OOOTT
eee eseeet | eee | eee | eel
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
100 iy THE Ll
Tstart =25°C (Single Pulse)
0.01
Pot | 0.05 nNBSH—_ ET
10 ITAT 0.10 7OSeRSSePERDUESeaPET
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1 PSCeETHE
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Avalanche Current (A)
Thermal Response ( Z thJC )
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**Fig 14.** Typical Avalanche Current vs.Pulsewidth
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240 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
200 I D = 120A
excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.
160 Neer 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.
~~ COC 4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.
120
INN EE TT during avalanche).
6. Iav = Allowable avalanche current.
80 7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as
NST 25°C in Figure 14, 15).
tav = Average time in avalanche.
40 D = Duty cycle in avalanche = tav ·f
BEREERS SNEED ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)
EL ELLENN
0
25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC
Starting TJ , Junction Temperature (°C) IEav =Eav =av =AS (AR)= 2 A T/ [1.3·BV·Z = P = PD (ave)·tth]th]av] ·tth]th]av]
EAR , Avalanche Energy (mJ)
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- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
7. ΔT = Allowable rise in junction temperature, not to exceedΔT = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15).
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)
**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC IEav =Eav =av =AS (AR)= 2** A **T/ [1.3·BV·Z = P = PD (ave)·tth]th]av]**
**Fig 15.** Maximum Avalanche Energy vs. Temperature
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4.0
YN ID = 1.0A
ID = 1.0mA
ID = 250μA
3.0 Xt Sp
Sa DS
2.0 RN
1.0
-75 -50 -25 0 25 50 75 100 125 150 \ 175
TJ , Temperature ( °C )
VGS(th) Gate threshold Voltage (V)
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24
20
BRRREEEEE
16
tity ep
12
8 eer
IF = 30A
VR = 64V
4
TJ = 125°C
TJ = 25°C
0
Pit ity =!
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
IRRM - (A)
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**Fig 16.** Threshold Voltage Vs. Temperature
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24
20
THOTT:
¢ yp
16
12 BERERS oe nee Zen “1
8
x IF = 45A
VR = 64V
4 YO
weit || TJ = 125°C
TJ = 25°C
PEL
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
IRRM - (A)
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400
300 TTT Le
¢ Y |
200 VeVAS24
Ba
100 C IF = 30A
VR = 64V
7
+ TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
QRR - (nC)
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400
300
V4
200 Vea
100 e er IF = 45A E e
VR = 64V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
QRR - (nC)
**----- End of picture text -----**
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Driver Gate Drive
P.W.
Period D =
D.U.T + [{ P.W. n d — Period
) [©)] • Circuit Layout Considerations lt V | GS=10V
•
| —| - LowGround Stray Pla I n eductance
• Low Leakage Inductance 2) D.U.T. ISD Waveform
+
Reverse
Recovery Body Diode Forward
oH - [1] Current Transformer - ® + Current r Current di/dt NN
1) D.U.T. VDS Waveform Diode Recoverydv/dt ‘
00 = VDD
ma
• Re-Applied
• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
Re ( aA • dv/dt controlled by Rg Vpp -
•
D.U.T. - Device Under Test er ae
Isp controlled by Duty Factor "D" @ t Ripple ≤ 5% ISD
* Veg = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET ® Power MOSFETs
V(BR)DSS
15V < tp >
VDS L DRIVER
RG D.U.T +
- [V][DD]
IAS A
20VVGS
tp 0.01Ω IAS
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**Fig 22a.** Unclamped Inductive Test Circuit
**Fig 22b.** Unclamped Inductive Waveforms
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LD
VDS
+
VDD -
D.U.T
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
Fig 23a. Switching Time Test Circuit
L
VCC
DUT
0
1K
i:
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**Fig 23a.** Switching Time Test Circuit
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V
DS
90%
10%
V
GS
*| . i
td(on) tr td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 l ey! Qgs2 Qgd Qgodr
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**Fig 24b.** Gate Charge Waveform
**Fig 24a.** Gate Charge Test Circuit
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EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30
LOGO 135H
IN THE ASSEMBLY LINE "H"
56 57
DATE CODE
Zae
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H
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TO-247AC packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/08
www.irf.com
8
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
- [View this product on Novapart](https://novapart.co/products/IRFP3077PBF/power-mosfet-n-channel-75-v-120-a-3300-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp3077pbf/mosfet-n-to-247ac/dp/1602241)
---
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