# Power MOSFET, HEXFET®, N Channel, 75 V, 209 A, 4500 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2776856/)

**URL**: https://novapart.co/products/IRFP2907PBF/power-mosfet-hexfet-n-channel-75-v-209-a-4500-ohm
**SKU**: IRFP2907PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.5100
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 470W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 209A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776856/)

## PD -95050C IRFP2907PbF 

## HEXFET[®] Power MOSFET 

## **Typical Applications** 

Telecom applications requiring soft start 

## **Benefits** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 75V<br>R  = 4.5m Ω<br>DS(on)<br>G<br>ID = 209A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This Stripe Planar design of HEXFET[®] Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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TO-247AC<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|TO,<br>~~——OTITIT2,HH—|~~<br>~~———————~~|**Parameter**<br>TO,<br>~~——OTITIT2,HH—|~~<br>~~———————~~|**Max.**<br>TO,<br>~~:~~|**Units**<br>TO,|
|---|---|---|---|
|ID@ TC= 25°C<br>~~——OTITIT2,HH—|~~<br>~~———————~~|Continuous Drain Current, VGS@ 10V<br>~~——OTITIT2,HH—|~~<br>~~———————~~|209<br>~~:~~|A|
|ID@ TC= 100°C<br>~~——OTITIT2,HH—|~~<br>~~———————~~|Continuous Drain Current, VGS@ 10V<br>~~——OTITIT2,HH—|~~<br>~~———————~~|148<br>~~:~~||
|IDM<br>~~———————~~<br>~~a~~|Pulsed Drain Current<br>~~———————~~|840||
|PD@TC= 25°C<br>~~———————~~<br>~~a a~~|Power Dissipation<br>~~———————~~<br>~~a~~|470|W|
|~~ee~~|Linear DeratingFactor<br>~~ee~~|3.1<br>~~ee~~|W/°C<br>~~ee~~|
|VGS<br>~~ee~~|Gate-to-Source Voltage<br>~~ee~~<br>~~a~~|± 20<br>~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|
|EAS<br>~~ee~~|Single Pulse Avalanche Energy<br>~~ee~~|1970<br>~~ee~~|mJ<br>~~ee~~|
|IAR<br>~~ee~~<br>~~ee~~|Avalanche Current<br>~~ee~~<br>~~—~~<br>~~ee~~|See Fig.12a, 12b, 15, 16<br>~~ee~~<br>~~ee~~<br>~~O~~|A<br>~~ee~~<br>~~ee~~|
|EAR<br>~~ee~~<br>~~pf~~|Repetitive Avalanche Energy<br>~~ee~~||mJ<br>~~ee~~|
|dv/dt<br>~~a~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~<br>~~O~~|V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range|-55  to + 175<br>~~O~~|°C|
|~~pf~~|SolderingTemperature, for 10 seconds|300(1.6mm from case)<br>~~O~~||
|~~a~~|Mounting Torque, 6-32 or M3 screw|10 lbf•in (1.1N•m)||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.32|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––||
|RθJA|Junction-to-Ambient|–––|40||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es<br>~~ee~~|**Max.**<br>es<br>~~ee~~|**Units**<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~a~~|75<br>~~ee ~~<br>~~a~~<br>~~es~~|–––<br> ~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|V<br>~~a~~|VGS= 0V, ID= 250μA<br>~~a~~<br>~~@~~|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~es~~|0.085 <br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~@~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~|–––<br>~~es~~|3.6<br>~~se~~|4.5<br>~~se~~|mΩ<br>~~se~~|VGS= 10V, ID= 125A<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|2.0<br>~~es~~|–––<br>~~es~~<br>~~se~~|4.0<br>~~es~~<br>~~se~~|V<br>~~es~~<br>~~se~~|VDS= 10V, ID= 250μA<br>~~es~~|
|gfs<br>~~po~~|Forward Transconductance<br>~~ne~~<br>~~po~~|130<br>~~ne~~<br>~~po~~|–––<br>~~se~~<br>~~ne~~<br>~~po~~|–––<br>~~se~~<br>~~ne~~<br>~~po~~|S<br>~~se~~<br>~~ne~~<br>~~po~~|VDS= 25V, ID= 125A<br>~~ne~~<br>~~po~~|
|IDSS<br>~~po~~|Drain-to-Source Leakage Current<br>~~ne~~<br>~~po~~|–––<br>~~ne~~<br>~~po~~|–––<br>~~ne~~<br>~~po~~|20<br>~~ne~~<br>~~po~~|μA<br>~~ne~~<br>~~po~~|VDS= 75V,VGS= 0V<br>~~ne~~<br>~~po~~|
|||–––<br>~~po~~|–––<br>~~po~~|250<br>~~po~~||VDS= 60V, VGS= 0V, TJ= 150°C<br>~~po~~|
|IGSS<br>~~po~~|Gate-to-Source Forward Leakage<br>~~po~~|–––<br>~~po~~|–––<br>~~po~~|200<br>~~po~~|nA<br>~~po~~|VGS= 20V<br>~~po~~|
||Gate-to-Source Reverse Leakage<br>~~po~~|–––<br>~~po~~|–––<br>~~po~~|-200<br>~~po~~||VGS= -20V<br>~~po~~|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|410<br>~~ee~~|620<br>~~ee~~|nC|ID= 125A<br>VDS= 60V<br>VGS= 10V<br>~~@~~|
|Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|92<br>~~ee~~<br>~~ee~~|140<br>~~ee~~|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|140<br>~~ee~~<br>~~ee~~|210<br>~~ee~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|23<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 125A<br>RG= 1.2Ω<br>VGS= 10V<br>~~@~~<br>®<br>~~es~~|
|tr<br>~~ee~~<br>~~es~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|190<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|130<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~ee~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~|–––|130|–––|||
|LD<br>~~ee~~<br>~~ee~~|Internal Drain Inductance<br>~~ee~~<br>~~ee~~|–––|5.0|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~es~~|
|LS<br>~~ee~~<br>~~ee~~<br>~~——————~~|Internal Source Inductance<br>~~ee~~<br>~~ee~~<br>~~——————~~|–––|13|–––|nH||
|Ciss<br>~~ee~~<br>~~——————~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~——————~~|–––|13000|13000 –––|pF<br>:<br>~~GG~~<br>~~GO~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~es~~<br>~~ee~~|
|Coss<br>~~ee~~<br>~~——————~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~——————~~|–––|2100|–––|||
|Crss<br>~~——————~~<br>~~a~~<br>~~ee ee~~|Reverse Transfer Capacitance<br>~~——————~~<br>~~ee~~|–––<br>~~ee~~|500<br>~~ee~~|–––|||
|Coss<br>~~——————~~<br>~~a~~<br>~~ee ee~~|Output Capacitance<br>~~——————~~<br>~~ee~~|–––<br>~~ee~~|9780<br>~~ee~~|–––<br>~~GO~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>~~ee~~|
|Coss<br>~~a~~<br>~~ee ee~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~GG~~|–––<br>~~ee~~<br>~~GG~~|1360<br>~~ee~~<br>~~GG~~|–––<br>~~GG~~<br>~~GO~~||VGS= 0V,VDS= 60V, ƒ= 1.0MHz<br>~~ee~~|
|Cosseff.<br>~~a~~<br>~~a ~~|Effective Output Capacitance<br> ~~GG~~|–––<br>~~GG~~|2320<br>~~GG~~|–––<br>~~GG~~<br>~~GO~~||VGS= 0V, VDS= 0V to 60V|



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.25mH 

- RG = 25 Ω , IAS = 125A. (See Figure 12). 

- ISD ≤ 125A, di/dt ≤ 260A/μs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

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 1000<br>VGS<br>TOP 15V<br>10V8.0V es<br>7.0V<br>6.0V a0 comiliemniina<br>5.5V<br>5.0V TT<br>BOTTOM 4.5V<br>pe iil<br> 100<br>—f = Sa<br>7 A<br>,/ Zor)<br> 10 4.5V<br>ee a<br>20μs PULSE WIDTH<br>T  = 25J °C<br> 1 ain<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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 1000<br>T  = 175  C J °<br>EH JOE<br> 100<br>Sa T  = 25  C J ° —-——=<br>ARae A<br> 10<br>SERRE—  EEEEEE<br>eeSSSSS=SSS===ee ee eee eee<br>V      = 25VDS<br>SO 20μs PULSE WIDTH<br> 1 SEEREE<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP 15V<br>10V8.0V a a 2<br>7.0V<br>6.0V ie ccc<br>5.5V<br>5.0V Til LWA CTT<br>BOTTOM 4.5V<br>Ae J<br>aU 7 asl<br> 100<br>EE a<br>= | epeeEe nee 4.5V Yt TT Ty<br>SA<br>20μs PULSE WIDTH<br>T  = 175J °C<br> 10 My _<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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3.0<br>ID = 209A<br>2.5<br>PCE<br>2.0<br>PERE Eee<br>1.5<br>CCC aTA<br>1.0<br>Bene? “a 4eennnn<br>0.5 errPPP<br>0.0 Pt PPT ttt} Py PPttt yy VGS = yl 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20000 VGS   = 0V,       f = 1 MHZ 20 ID = 125A<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>16000 [FF CCrss    = C = Cgd + C 16 feaenee VVDS DS == 60V 37V TH<br>oss   ds  gd<br><1 PEE Lf |<br>Ciss<br>12000<br>ae Sooss- §$;: 12 # # HH +<br>| TTT<br>8000 NS A TT<br>8<br>PST PPP A<br>PTI TAA<br>4000<br>Coss<br>4<br>SOT, SAL<br>Per Crss LT Att FOR TEST CIRCUIT<br>0<br>1 10 est 100 0 JEPALLET SEE FIGURE        TTT 13<br>0 100 200 300 400 500 600 700<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 10000<br>OPERATION IN THIS AREA LIMITED<br>T  = 175  CJ ° 1000 BY R DS (on)<br> 100<br>100<br>100μsecμsecsec<br> 10<br>== ======—=—— 10 esCOCO 1msec<br>T  = 25  C J °<br> 1<br>1 Tc = 25°C°CC 10msec<br>Tj = 175°Cj = 175°C = 175°C<br>Single Pulse DC<br>Pineeanneee V      = 0 V GS ‘ii Seti Seti pedi<br>0.1 FP ee EE ET TT 0.1 ata tt<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>0.1 1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA LIMITED<br>BY R DS (on)<br>1000<br>100<br>100μsecμsecsec<br>10 esCOCO 1msec<br>1 Tc = 25°C°CC 10msec<br>Tj = 175°Cj = 175°C = 175°C<br>Single Pulse DC<br>‘ii Seti Seti pedi<br>0.1 ata tt<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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240<br>LIMITED BY PACKAGE<br>200<br>160 esa . y D.U.T. | -<br>120 CPPTTPit PRPSTE EE a ≤ 1  .<br>≤ 0.1 %<br>ppt | WEE BS Tt )} tov<br>a  tp TT SS pusewih bs<br>80<br>PT tT tT EEE TE EIN Fig 10a.   Switching Time Test Circuit<br>40 PT TT Tt tet et AN VDS<br>pt tT tT tT tt Ty ty 90% [<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>Fi tT tT et tT ttt | 10% / \ OYi<br>Fig 9.   Maximum Drain Current Vs. VGS I \« m < > ! ay, Po r ><br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>1<br>| D = 0.50 | |<br>0.1 Pr<br>0.20<br>0.10<br>a a = |pe<rat ee<br>0.05<br>0.01 er en<br>0.02<br>0.01<br>a A ee ee | |<br>0.001 SINGLE PULSE<br>oo ( THERMAL RESPONSE ) ea seen Notes: eee<br>1. Duty Factor D = t1/t2<br>PPE HI<br>a ee 2. Peak Tj = P dm x Zthjc + Tc ll<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>I   , Drain Current (A)D<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V *<br>B oa tp 0.01 Ω<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>- tp<br>**----- End of picture text -----**<br>


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5000<br>ID<br>Gane<br>TOP 51A<br>88A<br>4000 NERS PAL EL BOTTOM 125A<br>3000 PNKIAtT Ppft ft ft<br>2000 PX\E EN EE<br>ISN IAC<br>1000<br>PpRSANO<br>ASNT<br>0<br>25 50 75 100 125 150 175<br>AS Pi Starting T  , Junction Temperature t J t LS SL (  C)°<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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— _ QG<br>4 ¢ QGS * QGD<br>VG<br>**----- End of picture text -----**<br>


Charge 

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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>ponannn naa<br>| 50K Ω |<br>12V .2 μ F<br>lst .3 μ F<br>Lei +<br>D.U.T. -VDS<br>VGS<br>(x<br>3mA<br>oO 1<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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4.0 TLTLLLLLILL<br>3.5 PINE<br>TOP RIEEELELLL<br>3.0<br>I D  = 250μA<br>2.5 FPAEERFCC NEHE<br>2.0 PEELE<br>PPPS<br>1.5<br>PEELE<br>1.0<br>-75 TCPELE -50 -25 0 25 50 E 75 E 100 125 E 150 175<br>TJ , Temperature ( °C )<br>VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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**Fig 13b.** Gate Charge Test Circuit 6 

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1000<br>Duty Cycle = Single Pulse<br>of yy) PE Allowed avalanche Current vs<br>0.01<br>100 SA hn oe | avalanche assuming  Δ pulsewidth, Tj  = 25°C due to tav  Ul<br>avalanche losses<br>or 0.05 EaIRL<br>TT 0.10 Ce SSS HH<br>10 ERTs,<br>ee | | | | a, VI<br>ae | | | 0 0<br>PL FTPT<br>1<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>2000 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>NEG TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>1600 NL BOTTOM   10% Duty CycleID = 125A 1. Avalanche failures assumption:  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>1200 RUNES eee   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>PINAL EEE<br>  Figures 12a, 12b.<br>800 PEINOAEEE E 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>BEERNNEEEE<br>400 EeeeeNNEeeee 5. BV = Rated breakdown voltage (1.3 factor accounts for    voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>PT TT 7.  Δ T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 PET ETASETE [PSL]   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>C •   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _ t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>><br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

8 

**==> picture [340 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>- DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>indicates "Lead-Free" LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/2011 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP2907PBF/power-mosfet-hexfet-n-channel-75-v-209-a-4500-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp2907pbf/mosfet-n-ch-209a-75v-to-247ac/dp/2776856)
---

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