# Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2468032/)

**URL**: https://novapart.co/products/IRFP260MPBF/power-mosfet-n-channel-200-v-50-a-004-ohm-to-247ac
**SKU**: IRFP260MPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1100
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468032/)

PD - 96293 

## IRFP260MPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free 

**==> picture [193 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>VDSS = 200V<br>R  = 0.04Ω<br>DS(on)<br>G<br>ID = 50A<br>S<br>TO-247AC<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-247 package is preferred for  commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. 

## **Absolute Maximum Ratings** 

|~~Ee~~|**Parameter**<br>~~Ee~~|**Max.**<br>~~Ee~~|**Max.**<br>~~Ee~~|**Units**<br>~~Ee~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~Ee~~<br>~~ae~~|Continuous Drain Current, VGS@ 10V<br>~~Ee~~<br>~~ae~~|50<br>~~Ee~~<br>~~ae~~||A<br>~~Ee~~<br>~~ae~~|
|ID@ TC= 100°C<br>~~ae~~|Continuous Drain Current, VGS@ 10V<br>~~ae~~|35<br>~~ae~~|||
|IDM<br>~~ae~~<br>~~es~~|Pulsed Drain Current<br>~~ae~~<br>~~es~~|200<br>~~ae~~|||
|PD@TC= 25°C<br>~~Oo~~<br>~~Sg~~|Power Dissipation<br>~~Oo~~<br>|300<br>~~Oo~~<br>||W<br>~~Oo~~<br>|
|~~Sg~~|Linear DeratingFactor<br>|2.0<br>||W/°C<br>|
|VGS<br>~~Sga~~<br>~~SS~~|Gate-to-Source Voltage<br>~~a~~<br>|±20<br>~~a~~<br>||V<br>~~a~~<br>|
|EAS<br>~~SS~~|Single Pulse Avalanche Energy<br>|560<br>||mJ<br>|
|IAR<br>~~SSa~~|Avalanche Current<br>~~a~~|50<br>~~a~~||A<br>~~a~~|
|EAR<br>~~©~~|Repetitive Avalanche Energy<br>~~©~~|30<br>~~©~~||mJ<br>~~©~~|
|dv/dt<br>~~oo~~|Peak Diode Recoverydv/dt<br>~~oo~~|10<br>~~oo~~||V/ns<br>~~oo~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to +175||°C|
|———-77N79@#9————J|SolderingTemperature, for 10 seconds<br>———-77N79@#9————J|300(1.6mm from case)|||
|~~a~~|Mounting torque, 6-32 or M3 srew<br>~~a~~|10 lbf•in (1.1N•m)<br>~~a~~||~~a~~|
|**Thermal Resistance**<br>~~a~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|0.50|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––||
|RθJA|Junction-to-Ambient|–––|40||



||**Thermal Resistance**|**Thermal Resistance**||||
|---|---|---|---|---|---|
|||**Parameter**|**Typ.**|**Max.**|**Units**|
||RθJC|Junction-to-Case|–––|0.50||
||RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––|°C/W|
||RθJA|Junction-to-Ambient|–––|40||
|www.irf.com|||||1|
||||||03/01/10|



## IRFP260MPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es ee~~|~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min.**<br>ee<br>~~es ee~~<br>~~es~~|**Typ. **<br>ee<br>~~ee~~<br>~~ee~~|**Max. **<br>ee<br>~~ee~~<br>~~ee~~|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|200<br>~~es ee~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>|–––<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~es~~|0.26<br> ~~ee ~~<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br> ~~ee~~<br>~~ee~~<br>~~es~~|V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~**e**e~~|–––<br>~~es~~<br>~~es~~<br>~~**e**d~~|0.04<br>~~es~~|Ω|VGS= 10V, ID= 28A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es ~~<br>~~ee~~<br>~~es~~|2.0<br>~~ee ~~<br> ~~es ~~<br>~~ee~~<br>~~**e**e~~<br>~~s~~|–––<br> ~~es~~<br> ~~es ~~<br>~~ee~~<br>~~**e**d~~<br>~~s~~|4.0<br> ~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~®~~|
|gfs|Forward Transconductance<br>~~es~~|27<br>~~**e**e~~<br>~~s~~|–––<br>~~**e**d~~<br>~~s~~|–––<br>~~ee~~|S|VDS= 50V, ID= 28A<br>~~®~~|
|IDSS|Drain-to-Source Leakage Current<br>~~es~~<br>~~PERE~~<br>~~—————~~|–––<br>~~**e**e ~~<br>~~s~~<br>~~PERE~~|–––<br> ~~**e**d~~<br>~~s ~~<br>~~PERE~~|25<br> ~~ee~~<br>~~PERE~~|µA<br>~~PERE~~<br>~~—————~~|VDS= 200V, VGS= 0V<br>~~®~~|
|||–––<br>~~PERE~~<br>~~—————~~|–––<br>~~PERE~~<br>~~—————~~|250<br>~~PERE~~<br>~~—————~~||VDS= 160V, VGS= 0V, TJ= 150°C<br>~~—————~~|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~—————~~<br>~~es~~|–––<br>~~—————~~<br>~~es~~|–––<br>~~—————~~<br>~~es~~|100<br>~~—————~~<br>~~|~~<br>~~es~~|nA<br>~~—————~~<br>~~|~~|VGS= 20V<br>~~—————~~|
||Gate-to-Source Reverse Leakage<br>~~es~~<br>|–––<br>~~es~~<br>**ee**<br>|–––<br>~~es~~<br>|-100<br>~~|~~<br>~~es~~<br>||VGS= -20V|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>**ee**<br>|–––<br>~~ee~~<br>|234<br>~~ee~~<br>|nC|ID= 28A<br>VDS= 160V<br>VGS= 10V<br>~~®~~|
|Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>**ee**<br>~~ee~~|–––<br>~~ee~~|38<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br><br>~~ee~~|–––<br>**ee**<br><br>~~ee~~<br>ee|–––<br><br>~~ee~~|110<br><br>~~ee~~|||
|td(on)<br>~~ee~~<br>~~a~~|Turn-On Delay Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>ee|17<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|ns|VDD= 100V<br>ID= 28A<br>RG= 1.8Ω<br>VGS= 10V<br>~~®~~<br>®|
|tr<br>~~a~~<br>es|Rise Time<br>~~ee~~|–––<br>ee<br>~~ee~~|60<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~a~~<br>es<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~|55<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>es<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|48<br>~~ee~~|–––<br>~~ee~~|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––|5.0|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®|
|LS<br>~~ee~~<br>~~pf~~|Internal Source Inductance<br>~~ee~~<br>~~pf~~|–––|13|–––|||
|Ciss<br>~~pf~~<br>ee<br>ee|Input Capacitance<br>~~pf~~<br>~~ee~~<br>|–––<br>~~ee~~<br>ee<br>|4057<br>~~ee~~<br>|–––<br>~~ee~~<br>|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz|
|Coss<br>~~pf~~<br>ee<br>ee|Output Capacitance<br>~~pf~~<br>~~ee~~<br>|–––<br>~~ee~~<br>ee<br><br>ee|603<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Crss<br>ee<br>ee|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>ee<br>~~ee~~<br>ee|161<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||



## **Source-Drain Ratings and Characteristics** 

|~~ee~~|**Parameter**<br>~~ee~~|**Min. **|**Typ. **|**Max.**|**Units**|**Conditions**<br>~~a~~|**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|---|
|IS<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~|–––|–––|50|A|G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~a~~<br>~~°~~|S<br>D<br>~~a~~|
|ISM<br>~~ee~~<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~ee~~|–––|–––|200||||
|VSD<br>~~ee~~<br>~~Sn~~<br>~~Sn~~|Diode Forward Voltage<br>~~ee~~<br>~~Sn~~|–––|–––|1.3|V|TJ= 25°C, IS= 28A, VGS= 0V<br>~~°~~<br>~~=~~||
|trr<br>~~ee~~<br>~~Sn~~<br>~~Sn~~|Reverse Recovery Time<br>~~ee~~<br>~~Sn~~|–––|268|402|ns|TJ= 25°C, IF= 28A<br>di/dt = 100A/µs<br>~~°~~<br>~~=~~||
|Qrr<br>~~ee~~<br>~~Sn~~<br>~~Sn~~|Reverse RecoveryCharge<br>~~ee~~<br>~~Sn~~|–––|1.9|2.8|µC|||
|ton<br>~~Sn~~<br>~~Sn~~|Forward Turn-On Time<br>~~Sn~~<br>~~ee~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~=~~<br>~~ee~~||||||



o Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 1.5mH RG = 25Ω, IAS = 28A. 

Ol. ≤ 28A di/d t ≤ 486A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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## IRFP260MPbF 

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**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V i ore<br>5.5V5.0V<br> 100 5.0V<br>BOTTOM 4.5V Haan D>=zcill<br>OC rr 4.5V<br> 10<br>oth<br> 1<br>7AM<br>Paiettaiet d EHRHR 20µs PULSE WIDTHT  = 175JT  = 175JJ  tH °CC<br>0.1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000 VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V Pt 1 Ch 6.0V i ore<br> 100 5.5V5.0V  100 5.5V5.0V<br>BOTTOM 4.5V (ot BOTTOM 4.5V Haan D>=zcill<br>ney oom OC rr 4.5V<br> 10  10<br>AA 4.5V oth<br> 1  1<br>i i t 7AM<br>A||aimeo 20µs PULSE WIDTHT  = 25J °C Paiettaiet d EHRHR 20µs PULSE WIDTHT  = 175JT  = 175JJ  tH °CC<br>0.1 0.1<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DSDS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 1000 3.5 ID = 50A<br>=== SSS SS SS ES P TE<br>3.0<br>BERR EEE EEES S TE TE |eTT TT Tf<br>2.5<br>P L o| | E)eee TT © ERECTa<br> 100<br>p T  = 175  CJ ° ee 2.0 Eee<br>ee ee ee eee eee 4<br>1.5<br>T  = 25  CJ °<br> 10<br>-—+a7fF dasannanaa+++ + + + + + J M M 1.0 eteeeeIe caer<br>a 0.5 L+T | | {| | i | |] d[ | CU<br>V      = 50VDS<br>P itEtT ER) 20µs PULSE WIDTH ESEEEEEEEi VGS = 10V<br> 1 0.0<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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## IRFP260MPbF 

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8000 16<br>VGS   = 0V,     f = 1 MHZ ID = 28A<br>7000 ail TH CC iss   = C  = C gs  + C gd , C ds   SHORTED Pt VVDSDS== 160V 100V |<br>Crss   = Cgd + C VDS= 40V<br>6000 INENTTET oss   ds  gd 12 Pt | \<br>Ciss<br>5000 ANPNT _| ||ay P| | | | | LyYAVA<br>4000 PNaINAee EPell 8 P| | | | LYMf |<br>Coss<br>3000 |PtNE TT||| P|p= | =| V7YA]4a<br>2000 EN lll 4 a<br>Crss<br>1000 arPT TINE EPall||ETT P/F | | ft fd<br>0 I lee Sl 0 Yi |} fp fd<br>0 50 100 150 200<br>1 10 100 1000<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>aee ee ee ee ee ee Zz Lt TTT<br> 100<br>CEE T  = 175  CJ ° ee  100 tt 10us<br>2- 2 =——== Ale | AUS UI<br> 10 ee4am e o 100us<br>T  = 25  CJ °<br>a== a  10 aan nil<br>ee || Sl 1ms<br> 1 _———— Pct Cn<br>a  T TCJ = 25  C= 175  C° ° a 10ms TT<br>0.1 Apfopea ee fe V      = 0 V  f GS e  1 p  Single Pulse f1 es al<br>0.2 0.6 1.0 1.4 1.8 2.2  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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## IRFP260MPbF 

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**----- Start of picture text -----**<br>
50<br>50<br>BNR Vps >——<br>40<br>40 PP NEE | le “<br>pf} P PN EE °°<br>30 SEREREDNEEEE pov<br>30 ≤ 1<br>≤ 0.1 %<br>Pit ttt ETN ET evn<br>20<br>20 ptti tt ty PN Fig 10a. Switching Time Test Circuit<br>VDS<br>ECE<br>10 90%<br>10<br>Pi TT TT TTT yyA x[__ |<br>0<br>0 25 50 75 100 125 150 175<br>25 PEC 50 T   , Case TemperatureC 75 100 125 °(  C)150° 175 10% /\ /\ |<br>T   , Case TemperatureC (  C) VGS<br>| MAY<br>td(on) tr td(off) tf<br>Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms<br>Case Temperature<br> 1<br>+<br>———_<br>D = 0.50<br>0.1 0.20 a eee<br>0.10<br>0.05 a<br>e e<br>0.02<br>0.01 (THERMAL RESPONSE)SINGLE PULSE PDM<br>et y<br>0.01 ———“a = == ll ==l CLT aeTTI t1<br>t2<br>pT ETT<br>a ee eee 1. Duty factor D =Notes: t   / t1 2<br>en ll 2. Peak TJ= P DM x  ZthJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRFP260MPbF 

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1500<br>15V ID<br>TOP 11A<br>20A<br>BOTTOM 28A<br>VDS L DRIVER<br>R EE<br>1000<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20V<br>tp 0.01Ω<br>500<br>N IN = \ :<br>12a. Unclamped Inductive Test Circuit PRANTL |<br>BSNS<br>V(BR)DSS<br><— tp [>] 0 ot SSSa<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Vs. Drain Current<br>/ / \ Fig 12c. Maximum Avalanche Energy<br>IAS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>een Same Type as D.U.T. f<br>|<br>50KΩ !<br>|<br>12V .2µF |<br>QG .3µF | ! |<br>eT ns 7i D.U.T. +-VDS<br>4 < QGS *+— QGD —_—><br>VGS<br>VG 3mA<br>yy<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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## IRFP260MPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>——| 7<br>t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt f<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop   e_<br>® Inductor Curent UW +<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## IRFP260MPbF 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/2010 

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