# Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:8649260/)

**URL**: https://novapart.co/products/IRFP250NPBF/power-mosfet-n-channel-200-v-30-a-0075-ohm-to
**SKU**: IRFP250NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2400
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 214W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.075ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8649260/)

PD - 95007A 

## IRFP250NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free 

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D<br>VDSS = 200V<br>R  = 0.075 Ω<br>DS(on)<br>G<br>ID = 30A<br>S<br>TO-247AC<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-247 package is preferred for  commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. 

|~~TO~~|**Parameter**<br>~~TO~~<br>~~—.-nmN>"--0nwvNvWv-f_~~|**Max.**<br>~~—.-nmN>"--0nwvNvWv-f_~~|**Max.**<br>~~—.-nmN>"--0nwvNvWv-f_~~|**Units**<br>~~—.-nmN>"--0nwvNvWv-f_~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~TO~~|Continuous Drain Current, VGS@ 10V<br>~~TO~~<br>~~—.-nmN>"--0nwvNvWv-f_~~|30<br>~~—.-nmN>"--0nwvNvWv-f_~~||A<br>~~—.-nmN>"--0nwvNvWv-f_~~<br>|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V|21|||
|IDM<br>a|Pulsed Drain Current<br>|120<br>|||
|PD@TC= 25°C<br>~~ee~~|Power Dissipation<br>~~ee~~|214<br>~~ee~~||W<br>~~ee~~|
|~~ee~~<br>~~——~~|Linear DeratingFactor<br>~~ee~~|1.4<br>~~ee~~||W/°C<br>~~ee~~|
|VGS<br>~~——~~<br>~~————~~|Gate-to-Source Voltage<br>~~—e~~|± 20||V|
|EAS<br>~~——~~<br>~~————~~|Single Pulse Avalanche Energy<br>~~—e~~|315||mJ|
|IAR<br>~~————~~<br>~~eo~~|Avalanche Current<br>~~—e~~<br>~~eo~~|30<br>~~eo~~||A<br>~~eo~~|
|EAR<br>~~ime~~|Repetitive Avalanche Energy<br>~~ime~~|21<br>~~ime~~||mJ<br>~~ime~~|
|dv/dt<br>~~ie~~|Peak Diode Recoverydv/dt<br>~~ie~~|8.6<br>~~ie~~||V/ns<br>~~ie~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range|-55 to +175||°C|
|a|SolderingTemperature, for 10 seconds|300(1.6mm from case)|||
|~~oo~~|Mounting torque, 6-32 or M3 srew<br>~~oo~~|10 lbf•in (1.1N•m)<br>~~oo~~||~~oo~~|
|**Thermal Resistance**<br>~~oo~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|0.7|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––||
|RθJA|Junction-to-Ambient|–––|40||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**||
|---|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.7|||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––|°C/W||
|RθJA|Junction-to-Ambient|–––|40|||
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|||||08/18/10||



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## IRFP250NPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~|**Parameter**<br>es<br>~~ee~~|**Min.**<br>es<br>~~**e**s~~|**Typ. **<br>es<br>~~e~~~~**e**~~|**Max. **<br>es|**Units**<br>es|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~ee~~|200<br>~~**e**s~~|–––<br>~~e~~~~**e**~~|–––|V|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~ee~~<br>~~I~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~ee~~<br>~~I~~|–––<br>~~**e**s ~~<br>~~ee~~|0.26<br> ~~e~~~~**e**~~<br>~~ee~~|–––<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~I~~|Static Drain-to-Source On-Resistance<br>~~I~~|–––|–––|0.075|Ω|VGS= 10V, ID= 18A<br>~~®~~|
|VGS(th)<br>~~I~~|Gate Threshold Voltage<br>~~I~~<br>~~ee~~<br>~~es~~|2.0<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|4.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~®~~|
|gfs|Forward Transconductance<br>~~es~~|17<br>~~es~~<br>~~es ee~~|–––<br>~~ee~~|–––<br>~~ee~~|S<br>~~eee~~|VDS= 50V, ID= 18A<br>~~®~~|
|IDSS|Drain-to-Source Leakage Current<br>~~es ~~<br>~~ee~~<br>~~PRE~~|–––<br> ~~es~~<br>~~ee~~<br>~~es ee~~|–––<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~eee~~<br>|VDS= 200V, VGS= 0V<br>~~®~~|
|||–––<br>~~ee~~<br>~~es ee~~<br>~~PRE~~|–––<br>~~ee~~<br>~~ee~~<br>~~PRE~~|250<br>~~ee~~<br>~~ee~~<br>~~PRE~~||VDS= 160V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~PRE~~|–––<br>~~es ee~~<br>~~PRE~~<br>~~es~~|–––<br>~~ee~~<br>~~PRE|_|~~|100<br>~~ee~~<br>~~PRE|_|~~|nA<br>~~eee~~<br>~~|_|~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br><br>~~ee~~|–––<br><br>~~ee~~<br>~~es~~|–––<br>~~|_|~~<br>~~ee~~|-100<br>~~|_|~~<br>~~ee~~||VGS= -20V|
|Qg<br>ee|Total Gate Charge<br>~~**ee**~~<br>|–––<br>~~es~~<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>|123<br>~~**ee**~~<br>|nC|ID= 18A<br>VDS= 160V<br>VGS= 10V, See Fig. 6 and 13<br>~~Q~~|
|Qgs<br>ee|Gate-to-Source Charge<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>|21<br>~~**ee**~~<br>|||
|Qgd<br>ee~~ee~~|Gate-to-Drain("Miller")Charge<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|57<br>~~**ee**~~<br>~~ee~~|||
|td(on)<br>~~ee~~<br>a|Turn-On Delay Time<br>~~ee~~<br>|–––<br>~~ee~~<br>|14<br>~~ee~~<br>|–––<br>~~ee~~<br>|ns|VDD= 100V<br>ID= 18A<br>RG= 3.9Ω<br>RD= 5.5Ω, See Fig. 10<br>~~Q~~<br>Q|
|tr<br>aee|Rise Time<br>~~ee~~|–––<br>~~ee~~|43<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>aee<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|41<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>ee<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>Q|
|LS<br>~~ee~~<br>~~ff~~|Internal Source Inductance<br>~~ee~~<br>~~ff~~|–––|7.5|–––|||
|Ciss<br>~~ff~~<br>ee|Input Capacitance<br>~~ff~~<br>~~ee~~|–––<br>~~ee~~|2159<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~ff~~<br>ee<br>ee|Output Capacitance<br>~~ff~~<br>~~ee~~|–––<br>~~ee~~|315<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>ee<br>ee|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|83<br>~~ee~~|–––<br>~~ee~~|||



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current ––– ––– 30 MOSFET symbol D ~~ee~~ (Body Diode) A showing  the ~~a~~ ISM Pulsed Source Current ––– ––– 120 integral reverse G (Body Diode) p-n junction diode. S ~~ee)~~ VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 186 279 ns TJ = 25°C, IF = 18A ~~SE @~~ Qrr ~~Sn~~ Reverse Recovery Charge ––– 1.3 2.0 µ C di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ~~—.> HHH ®~~ 

® Repetitive rating;  pulse width limited by 6) ISD ≤ 18A , di/d t ≤ 374A/µs, VDD ≤ V(BR)DSS, max. junction temperature. (See Fig. 11) TJ ≤ 175°C @ Starting TJ = 25°C, L = 1.9mH ® Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25 Ω , IAS = 18A. (See Figure 12) 

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## IRFP250NPbF 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br> 100 6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>He a<br> 10 plo EEEt<br> 1 4.5V<br>oe<br>a 0<br>0.1<br>0.01 AHHPi FF 20µs PULSE WIDTHT  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br> 100<br>pj | | | | | |<br>T  = 175  CJ °<br>E S<br>a<br> 10 | l[ AA | | | i | | |<br>pease<br>any A ° as<br>| | FI T  = 25  CJ eS OG<br>Af )<br> 1<br>aAeeAAoe ee ee<br>V      = 50VDS<br>so 20µs PULSE WIDTH<br>0.1 Fit ti tl<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br> 100 5.0V<br>BOTTOM 4.5V<br>e e<br>e es<br> 10 P| esAoaeII<br>ems eee aiieee 4.5V<br> 1<br>0.1 PrFL [TT] Tr 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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3.5<br>ID = 30A<br>-— _TTTTITTIILIIL<br>3.0<br>2.5 PEEP Peet VW<br>ptt ttt ttt AT<br>2.0 Pt TT tT TT TA<br>Ft tt ttt PA tt<br>1.5<br>7<br>1.0<br>ee<br>thet<br>ar te<br>0.5 t ttt tt<br>FEEEEEELE VGS = 10V<br>0.0 Pitt TTT ty | |<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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## IRFP250NPbF 

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**----- Start of picture text -----**<br>
5000<br>VGS   = 0V,     f = 1 MHZ<br>mail| Ciss  = Cgs + Cgd, Cds  SHORTED<br>C   = C<br>4000 rss   gd<br>Hit Coss   = Cds + Cgd<br>3000<br>Ciss<br>ENQUIRE ET<br>Xt TINE TTT<br>2000 NCCESSEU CT<br>Coss<br>are | ET ||<br>1000<br>| Crss<br>PL INET EU<br>0 PPT CTT<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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16<br>ID = 18A<br>VDS= 160V<br>Po VDS= 100V ||<br>VDS= 40V<br>Cs<br>12<br>fb<br>8<br>tA<br>TTT TIGA<br>4 Be=="-455nn<br>vaqnenenel<br>/<br>0 Jit} tty<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br> 100<br>PCCEPCCEe em<br>T  = 175  CJ °  100<br>10us<br>Pe e<br>| SRS<br> 10<br>100us<br>SS=>S>========FEAR T  = 25  CJ °  10 HAaSISSSENeel  T E<br> 1<br>SSS SS SS SS SS ea 1ms<br>i  T TCJ = 25  C= 175  C° ° A 10ms Com<br>0.1 SPOE S V      = 0 V GS  1 p  Single Pulse MEf [T] [EE] Ss i<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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## IRFP250NPbF 

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35<br>35<br>fF | tt | EE TT TT Vps 6.<br>30 Pit i {tt ttt tt Ves Ut.<br>30<br>nN Re a<br>25 PT SAT TE TT Tt ; po<br>25<br>CTT “ov<br>20 aa| [|SNI| | | {| Pulse Width ≤ 1  us<br>20 eRe eeeNeeee Duty Factor ≤ 0.1 %<br>eRe eeNeee i<br>15<br>15<br>Pf tp fpf ING\ Fig 10a. Switching Time Test Circuit<br>10<br>10 VDS<br>Tr 90% FT<br>5 P| tte tT TdT dT cE Tt IA Y /<br>5<br>P| | tT tT tT dT ThE TT TY |<br>0 PT ttt EE TE TTT |<br>0 25 50 75 100 125 150 175<br>25 50 T   , Case TemperatureC 75 100 125 °(  C)150° 175 10% /\ |<br>T   , Case TemperatureC (  C) VGS I|«—>la—_____»|Ko<br>td(on) tr td(off) tf<br>Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms<br>Case Temperature<br> 1 SSS<br>a<br>FEEFn<br>D = 0.50<br>PS s err i<br>a | oe<br>0.20<br>tf |<br>0.1<br>amiee 0.10 [0] ee a ao”<br>a ee ee  ee ee ee ee eee<br>a>a PDM<br>| 0.05 | | Lege<br>tt t1<br>0.02 SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>0.01<br>Se GAIT | Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak TJ = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRFP250NPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>if 20V<br>Fig 12a. Unclamped tp Inductive 0.01 Ω  Test Circuit<br>V(BR)DSS<br>a tp<br>/ / \<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>10V O QG T<br>4 < QGS *+— QGD —_—><br>VG<br>Charge<br>**----- End of picture text -----**<br>


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800<br>ID<br>TOP 7.3A<br>13A<br>BOTTOM 18A<br>P E<br>600 NopIN pt<br>Pt<br>400<br>NN AS |<br>NEN<br>200 SWAN<br>RENN= ie<br>0 p tt OSS| PSS|<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>es +<br>i | D.U.T. -VDS<br>VGS<br>3mA<br>OFNNcowl IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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## IRFP250NPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## IRFP250NPbF 

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3.65 (.143) - D -<br>15.90 (.626) 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>= - B - - A - 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>20.30 (.800)<br>19.70 (.775) 2X 5.50 (.217) NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>ie’ 1 2 3 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>- C -      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559) 3.70 (.145)<br>LEAD ASSIGNMENTS<br>|| Hexfet IGBT<br>2.40 (.094)2.00 (.079) ; 3X 1.40 (.056)1.00 (.039) _| 3X [0.80 (.031)] 0.40 (.016) — 1 - Gate2 - Drain LEAD 1 - GATE ASSIG NMENTS 1 - Gate2 - Collector<br>co 5.45 (.215)2X || 3.40 (.133)0.25 (.010) M C A S 2.60 (.102)2.20 (.087) 3 - Source4 - Drain2 - DRAIN3 - SOURCE4 - DRAIN3 - Emitter4 - Collector<br>2X 3.00 (.118)<br>Part Marking Information<br>EXAMPLE: THIS IS AN IRFPE30  C1<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER p IRFPE30 (<br>LOGO  035H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line | DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/2010 

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8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP250NPBF/power-mosfet-n-channel-200-v-30-a-0075-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp250npbf/mosfet-n-200v-30a-to-247ac/dp/8649260)
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