# Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:2580020/)

**URL**: https://novapart.co/products/IRFP250MPBF/power-mosfet-n-channel-200-v-30-a-0075-ohm-to
**SKU**: IRFP250MPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8790
**Stock**: 1000+
**Lead Time**: 85 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 214W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.075ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580020/)

IRFP250MPbF ~~—~~ 

## ~~Cinfineon~~ 

## IR MOSFET™ 

## **Features** 

- Advanced Process Technology 

- Dynamic dv/dt Rating 

- 175°C Operating Temperature 

- Fast Switching 

- Fully Avalanche Rated 

||IR MOSFET™|
|---|---|
|**V(BR)DSS**|**200V**|
|**RDS(on)   max.**|**0.075**|
|**ID**|**30A**|



- Ease of Paralleling 

- Simple Drive Requirements 

- Lead-Free 

## **Description** 

IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. 

|TO-247AD|
|---|
|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~-——}~~<br>~~+—_J~~|



|~~es~~||||
|---|---|---|---|
|**Symbol**<br>~~es~~|**Parameter**|**Max.**|**Units**|
|ID@ TC= 25°C<br>~~es~~<br>~~——————<——~~|Continuous Drain Current, VGS@ 10V<br>~~——————<——~~|30<br>~~——————<——~~|A<br>~~——————<——~~|
|ID @TC= 100°C<br>~~——————<——~~<br>~~es~~|Continuous Drain Current,VGS @10V<br>~~——————<——~~<br>~~nn~~|21<br>~~——————<——~~<br>~~nn~~||
|IDM<br>~~——————<——~~<br>~~es~~|Pulsed Drain Current<br>~~——————<——~~<br>~~nn~~|120<br>~~——————<——~~<br>~~nn~~||
|PD @TC= 25°C<br>~~es~~<br>~~a~~|Maximum Power Dissipation<br>~~nn~~<br>~~I~~|214<br>~~nn~~|W|
|~~ot~~|Linear DeratingFactor<br>~~ot~~|1.4<br>~~ot~~|W/°C<br>~~ot~~|
|VGS<br>~~ot~~<br>~~a~~|Gate-to-Source Voltage<br>~~ot~~|± 20<br>~~ot~~|V<br>~~ot~~|
|EAS<br>~~a—_~~|Single Pulse Avalanche Energy |315|mJ|
|IAR<br>~~a—_~~|Avalanche Current|30|A|
|EAR<br>~~—_~~<br>~~ee~~|Repetitive Avalanche Energy <br>|21<br>|mJ<br>|
|dv/dt<br>~~—_~~<br>~~ee~~|Peak Diode Recoverydv/dt<br>|8.6<br>|V/ns<br>|
|TJ<br>TSTG<br>~~—_~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>|-55  to + 175<br>|°C<br>~~oo~~|
|~~eeoo~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~oo~~|300<br>~~oo~~||
|~~eeoo~~|Mountingtorque,6-32 or M3 screw<br>~~oo~~|10 lbf•in(1.1N•m)<br> <br>~~oo~~|~~oo~~|



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Typ. **|**Max.**|**Units**|
|RJC|Junction-to-Case|–––|0.7|°C/W|
|RCS|Case-to-Sink,Flat,Greased Surface|0.24|–––||
|RJA|Junction-to-Ambient|–––|40||



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## ~~Cinfin eon~~ 

|~~es~~|||||||
|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge|–––|–––|123|nC|ID= 18A<br>VDS= 160V<br>VGS= 10V,See Fig.6 and 13|
|Qgs<br>~~es~~|Gate-to-Source Charge|–––|–––|21|||
|Qgd<br>~~a ~~|Gate-to-Drain Charge<br> ~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|57<br>~~ee~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|14<br>~~es~~|~~es~~|ns|VDD= 100V<br>ID= 18A<br>RG= 3.9<br>RD=  5.5 See Fig.10|
|tr<br>~~ee~~<br>~~ee~~|Rise Time<br>~~es~~|–––<br>~~es~~|43<br>~~es~~|–––<br>~~es~~|||
|td(off)<br>~~ee~~<br>~~ee~~<br>~~ee es~~|Turn-Off DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~|41<br>~~es~~|–––<br>~~es~~|||
|tf<br>~~ee~~<br>~~ee es~~|Fall Time<br>~~es~~|–––|33|–––|||
|LD<br>~~ee es~~<br>~~ft~~|Internal Drain Inductance<br>~~es~~<br>~~ft~~|–––<br>~~ft~~|5.0<br>~~ft~~|–––<br>~~ft~~|nH<br>~~ft~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS<br>~~ft~~|Internal Source Inductance<br>~~ft~~|–––<br>~~ft~~|13<br>~~ft~~|–––<br>~~ft~~|||
|Ciss<br>~~es~~|Input Capacitance<br>~~en~~|–––<br>~~en~~|2159<br>~~en~~|–––<br>~~en~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig.5|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~a~~|315<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~a~~|||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~a~~|83<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~a~~|||
|**Diode Characteristics**<br>~~esa~~|||||||
|~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~OO~~|**Typ. Max. Units**<br>~~OO~~|**. Max. Units**<br>~~OO~~|**. Max. Units**|**. Max. Units**<br>**Conditions**|
|IS<br>~~re~~|Continuous Source Current<br>(BodyDiode)<br>~~re~~|–––<br>~~re~~|–––<br>~~re~~|30<br>~~re~~|A<br>~~re~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~re~~|
|ISM<br>~~re~~|Pulsed Source Current<br>(BodyDiode)<br>~~re~~|–––<br>~~re~~|–––<br>~~re~~|120<br>~~re~~|||
|VSD<br>~~re~~<br>~~a ~~<br>~~NS~~|Diode Forward Voltage<br>~~re~~<br> ~~OO~~<br>~~NS~~|–––<br>~~re~~<br>~~OO~~<br>~~NS~~|–––<br>~~re~~<br>~~OO~~<br>~~NS~~|1.3<br>~~re~~<br>~~OO~~<br>~~NS~~|V<br>~~re~~<br>~~OO~~<br>~~NS~~|TJ= 25°C,IS= 18A,VGS= 0V<br>~~re~~<br>~~OO~~<br>~~ee~~|
|trr<br>~~NS~~<br>~~es~~|Reverse RecoveryTime<br>~~NS~~<br>~~rs~~|–––<br>~~NS~~<br>~~rs~~<br>~~es~~|186<br>~~NS~~<br>~~rs~~<br>~~es~~|279<br>~~NS~~<br>~~rs~~|ns   T<br>~~NS~~<br>~~rs~~|ns   TJ= 25°C ,IF= 18A<br>C   di/dt = 100A/µs<br>~~ee~~|
|Qrr<br>~~NS~~<br>~~es~~|Reverse RecoveryCharge<br>~~NS~~<br>~~rs~~|–––<br>~~NS~~<br>~~rs~~<br>~~es~~|1.3<br>~~NS~~<br>~~rs~~<br>~~es~~|2.0<br>~~NS~~<br>~~rs~~|µC   di/dt = 100A/<br>~~NS~~<br>~~rs~~||



**Notes:** 

>  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

 Starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 18A.(See fig. 12). 

 ISD  18A, di/dt  374A/µs, VDD  V(BR)DSS, TJ  175°C. 

 Pulse width  300µs; duty cycle  2%. 

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## ~~Cinfineon~~ 

**Fig. 1** Typical Output Characteristics 

**Fig. 3** Typical Transfer Characteristics 

**Fig. 2** Typical Output Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

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**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**==> picture [446 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
2<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10a.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**Fig. 12a.** Unclamped Inductive Test Circuit 

**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig. 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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IRFP250MPbF ~~pe~~ 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel IR MOSFET™ 

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## **TO-247AD Package Outline** (Dimensions are shown in millimeters (inches)) 

**==> picture [213 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>


## **TO-2** ~~**47AD Part Marking Information**~~ 

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IRFP250MPbF ~~e§$Eeee~~ 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Updated datasheet with corporate template|
|05/28/2020||Updated Package picture-page1|
|||Corrected from “Hexfet power MOSFET” to “ IR MOSFET™” -page1 &7|
|||Corrected  part marking from TO-247AC to TO-247AD on page 8.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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- [Supplier page](https://es.farnell.com/infineon/irfp250mpbf/mosfet-n-ch-200v-30a-to-247ac/dp/2580020)
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