# Power MOSFET, N Channel, 100 V, 46 A, 0.024 ohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:8658390/)

**URL**: https://novapart.co/products/IRFP150VPBF/power-mosfet-n-channel-100-v-46-a-0024-ohm-to
**SKU**: IRFP150VPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6840
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 46A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8658390/)

PD - 94459A 

## IRFP150V 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 

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D<br>VDSS = 100V<br>R  = 24mΩ<br>DS(on)<br>G<br>ID = 47A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 packcage because of its isolated mounting hole. 

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TO-247AC<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|a<br>-——|**Parameter**<br>a<br>ee|**Max.**<br>a<br>ee<br>_|**Units**<br>a<br>_|
|---|---|---|---|
|ID@ TC= 25°C<br>-——|Continuous Drain Current, VGS@ 10V<br>ee|46<br>ee<br>_|A<br>_|
|ID@ TC= 100°C<br>-——<br>Soe|Continuous Drain Current, VGS@ 10V<br>ee<br>Soe|32<br>ee<br>_<br>Soe||
|IDM<br>-——<br>Soe|Pulsed Drain Current<br>ee<br>Soe|230<br>ee<br>_<br>Soe||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|140<br>~~a~~|W<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|0.91<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|IAR<br>~~OOo~~|Avalanche Current<br>~~OOo~~|28<br>~~OOo~~|A<br>~~OOo~~|
|EAR<br>~~OOo~~|Repetitive Avalanche Energy<br>~~OOo~~|20<br>~~OOo~~|mJ<br>~~OOo~~|
|dv/dt<br>~~a;~~<br>~~eee~~|Peak Diode Recoverydv/dt<br>~~a;~~<br>~~eee~~|5.8<br>~~a;~~<br>~~eee~~|V/ns<br>~~a;~~<br>~~eee~~|
|TJ<br>TSTG<br>~~eee~~|Operating Junction and<br>Storage Temperature Range<br>~~eee~~|-55  to + 175<br>~~eee~~|°C<br>~~eee~~|
|~~eee~~|SolderingTemperature, for 10 seconds<br>~~eee~~<br>OOOO|300(1.6mm from case)<br>~~eee~~<br>OOOO||
|~~eee~~<br>~~a~~|Mounting torque, 6-32 or M3 srew<br>~~eee~~<br>~~a~~|10 lbf•in (1.1N•m)<br>~~eee~~<br>~~a~~|~~eee~~<br>~~a~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~-~~|**Parameter**<br>es<br>~~—S=~~|**Min.**<br>es<br>~~ee~~<br>~~ee~~<br>~~—S=~~|**Typ. **<br>es<br>~~ee~~<br>~~=~~|**Max. **<br>es<br>~~ee~~|**Units**<br>es|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~-~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~<br>~~—S=~~|100<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~**e**s~~<br>~~—S=~~|–––<br> ~~ee~~<br>~~es~~<br>~~=~~|–––<br>~~ee~~<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~-~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~<br>~~—S=~~|–––<br>~~ee~~<br>~~es~~<br>~~**e**s~~<br>~~e~~<br>~~—S=~~|0.13<br>~~es~~<br>~~=~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)<br>~~-~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~—S=~~|–––<br>~~**e**s~~<br>~~e~~<br>~~es~~<br>~~—S=~~|–––<br>~~=~~|24|mΩ|VGS= 10V, ID=28A<br>~~@~~|
|VGS(th)<br>~~-~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~—S=~~|2.0<br>~~**e**s~~<br>~~e~~<br>~~es~~<br>~~es~~<br>~~—S=~~|–––<br>~~es~~<br>~~=~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~@~~|
|gfs<br>~~-~~|Forward Transconductance<br>~~—S=~~|32<br>~~es~~<br>~~—S=~~|–––<br>~~=~~|–––|S|VDS= 25V, ID= 28A|
|IDSS<br>~~-~~|Drain-to-Source Leakage Current<br>~~—S=~~|–––<br>~~—S=~~|–––<br>~~=~~|25|µA|VDS= 100V, VGS= 0V|
|||–––<br>~~—S=~~|–––<br>~~=~~|250||VDS= 80V, VGS= 0V, TJ= 150°C|
|IGSS<br>~~-~~|Gate-to-Source Forward Leakage<br>~~—S=~~<br>~~PO~~|–––<br>~~—S=~~|–––<br>~~=~~|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~—S=~~|–––<br>~~—S=~~<br>ee|–––<br>~~=~~|-100||VGS= -20V|
|Qg<br>~~-~~|Total Gate Charge<br>~~—S=~~<br>~~ee~~|–––<br>~~—S=~~<br>~~ee~~<br>ee|–––<br>~~=~~<br>~~ee~~|130<br>~~ee~~|nC|ID= 28A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs|Gate-to-Source Charge|–––<br>ee|–––|26|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|–––|43|||
|td(on)<br>ee|Turn-On Delay Time|–––|12|–––|ns|VDD= 50V<br>ID= 28A<br>RG= 2.5Ω<br>VGS= 10V, See Fig. 10<br>®|
|tr<br>ee<br>es|Rise Time<br>~~ee~~|–––<br>~~ee~~|58<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>ee<br>es<br>~~ne~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ne~~|45<br>~~ee~~<br>~~ne~~|–––<br>~~ee~~<br>~~ne~~|||
|tf<br>es<br>~~ne~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ne~~|47<br>~~ee~~<br>~~ne~~|–––<br>~~ee~~<br>~~ne~~|||
|LD<br>~~ne~~|Internal Drain Inductance<br>~~ee~~|–––<br>~~ne~~|4.5<br>~~ne~~|–––<br>~~ne~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®|
|LS<br>~~ne~~<br>~~of~~|Internal Source Inductance<br>~~ee ~~<br>~~of~~|–––<br> ~~ne~~|7.5<br>~~ne~~|–––<br>~~ne~~|nH||
|Ciss<br>~~of~~|Input Capacitance<br>~~of~~|–––|3130|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss<br>~~of~~<br>~~ee~~|Output Capacitance<br>~~of~~|–––|410|–––|||
|Crss<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~re~~rs|–––<br>~~©~~|72<br>~~©~~|–––<br>©)|||
|EAS<br>~~ee~~<br>~~a~~|Single Pulse Avalanche Energy<br>~~re~~rs|––– 1060<br>~~©~~|1060<br>~~©~~|280<br>©)|mJ|IAS= 28A, L = 0.70mH|



## **Source-Drain Ratings and Characteristics** 

Notes: © Repetitive rating;  pulse width limited by ® Pulse width ≤ 400µs; duty cycle ≤ 2%.≤ 400µs; duty cycle ≤ 2%. 400µs; duty cycle ≤ 2%.≤ 2%. 2%. 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

® Pulse width ≤ 400µs; duty cycle ≤ 2%.≤ 400µs; duty cycle ≤ 2%. 400µs; duty cycle ≤ 2%.≤ 2%. 2%. © This is a typical value at device destruction and represents operation outside rated limits. 

eo) Starting TJ = 25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS=10V (See Figure 12). fe) ISD ≤ 28A t di/d ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

This is a calculated value limited to TJ = 175°C . 

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1000 1000<br>VGS VGS<br>TOP 16V TOP 16V<br>10V 10V<br>7.0V 7.0V<br>6.0V ee 6.0V eC HTH<br>100 5.0V patel 100 5.0V aomeelll<br>4.5V 4.5V<br>4.0V 4.0V<br>BOTTOM 3.5V a BOTTOM 3.5V PE<br>10 | a 10 e e Sanne ell<br>3.5V<br>3.5V<br>CY) HE | tt} I |<br>1 e r IU 1 P e ff<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>LAZ7t Tj = 25°C LU el Tj = 175°C LU<br>0.1 ani ll 0.1 ET lll<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.00 3.0<br>ID = 57A<br>es ee es es es<br>a se ee ee 2.5<br>100.00 a ee ee eee ptt ttt ttt A<br>TJ = 175°C 2.0<br>A T SAE<br>ee 2 2 ee ee ee eee<br>10.00 i 6A oe 1.5 CCEA<br>ee | ee ee es ee<br>| TJ = 25°C ee eee ee 1.0 va<br>1.00 i Cer<br>0.5<br>iee eeeeee eeeeee VDS = 15V ||<br>20µs PULSE WIDTH V GS = 10V<br>0.10 P Et 0.0 pT ETE ety tt<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0 T  , Junction TemperatureJ (  C)°<br>VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>= =: Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>FH C  = C + C<br>10000 oss   ds  gd<br>Ciss<br>at<br>1000 a<br>Coss<br>100 Crss<br>ST<br>10 |<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.00<br>100.00<br>| __| ar<br>T = 175°C<br>J<br>- 10.00 a a<br>Pf fo<br>1.00 TJ = 25°C<br>VGS = 0V<br>0.10 oe a<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID = 28A<br>VDS =  80V<br>fs t VDS =  50V {fT<br>VDS =  20V<br>10<br>P| | tf ye<br>7 Ye<br>Seen 2aee<br>5<br>Ae<br>2<br>0 Vi ft ft ft} ft<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>Sa me Hil a I<br>100µsec<br>10 PM STA S LTT<br>1msec<br>po snspMegny<br>1 10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 ee eT<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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50 wt tt tT yt Vps a<br>40 PSR ves hous<br>PPP PN EE Re an -<br>30<br>SERRE NGEEEE<br>PCAN Men ≤ 1<br>≤ 0.1 %<br>20 Pie EEE ENE Sayeed”<br>PCPCETTTTEN<br>10<br>VDS<br>pepe pete PN Figa 10a. Switching Time Test Circuit<br>90%<br>Pit f<br>0 ty it Tt Y<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>10% /\ ¥<br>Fig 9.   Maximum Drain Current Vs. VGS<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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 10<br> 1 a|eeaE ee eee<br>D = 0.50<br>a a aee<br>a 0.20 TTTaan eSes oat I<br>0.10 P DM<br>0.1<br>0.05 t 1<br>0.02 SINGLE PULSE t 2<br>eeeSanit 0.01 (THERMAL RESPONSE) Et eee 1. Duty factor D =Notes: t   / t1 2<br>a el l 2. Peak T J = P DM x  Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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550<br>15V I D<br>NESEEEE<br>TOP 11A<br>20A<br>RUneeee<br>VDS L DRIVER 440 BOTTOM 28A<br>PN<br>RG D.U.T + 330<br>- [V][DD] SENSE<br>IAS A<br>ai 20VVGS ONENEE EEE<br>tp 0.01Ω<br>220<br>Fig 12a. Unclampedss Inductive Test Circuit RSSas N \<br>110<br>PUP ASSN EE<br>V(BR)DSS<br>-— tp SREPot |ER|NNERUSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>//al\ Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>IAS<br>Fig 42b, Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T. i<br>; 50KΩ<br>12V .2µF<br>QG .3µF |<br>CT res<br>+<br>Ves i D.U.T. -VDS<br>QGS QGD<br>VGS<br>VG 3mA<br>Ort.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•<br>-<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt f"<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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3.65 (.143) - D -<br>15.90 (.626) @ 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>= - B - - A - 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>20.30 (.800)<br>19.70 (.775) 2X 5.50 (.217) NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>1 2 3 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>| | - C -      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559)<br>3.70 (.145)<br>2.40 (.094)2.00 (.079)2X 3X 1.40 (.056)1.00 (.039) 3X [0.80 (.031)] 0.40 (.016) LEAD ASSIGNMENTS1 - GATE2 - DRAIN<br>0.25 (.010) M C A S 2.60 (.102) 3 - SOURCE<br>Co 5.45 (.215) 2.20 (.087) 4 - DRAIN<br>3.40 (.133)<br>2X 3.00 (.118)<br>**----- End of picture text -----**<br>


## **TO-247 package is not recommended for Surface Mount Application.** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/03 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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