# Power MOSFET, N Channel, 55 V, 160 A, 5300 µohm, TO-247AC, Through Hole

![Product image](https://novapart.co/image/farnell:8658382/)

**URL**: https://novapart.co/products/IRFP1405PBF/power-mosfet-n-channel-55-v-160-a-5300-ohm-to
**SKU**: IRFP1405PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2300
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 310W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247AC |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 5300µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8658382/)

PD - 95509A 

## IRFP1405PbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 5.3m Ω<br>DS(on)<br>G<br>ID = 95A<br>S<br>**----- End of picture text -----**<br>


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TO-247AC<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~Pf~~<br>~~rs~~|160<br>~~Pf~~|A<br>~~a~~<br>~~G~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~rs~~|110||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~rs~~<br>~~a~~|(Package Limited)<br>95<br>~~a~~<br>~~G~~||
|IDM|~~Pulsed Drain Current~~<br>~~rs~~<br>~~a~~|640<br>~~a~~||
|PD@TC= 25°C|Power Dissipation<br>~~rs~~<br>~~a~~|310<br>~~a~~|W<br>~~a~~|
||Linear Derating Factor<br>~~a~~|2.0<br>~~a~~|W/°C<br>~~a~~|
|VGS<br><br>~~——————————————————SS~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~Single Pulse Avalanche Energy~~<br>~~pT~~<br>~~——————————————————SS~~|± 20<br>~~pT~~<br>~~——————————————————SS~~|V<br>~~pT~~|
|EAS (Thermally limited)<br>~~——————————————————SS~~|~~Single Pulse Avalanche Energy~~<br>~~pT~~<br>~~——————————————————SS~~|530<br>~~pT~~<br>~~——————————————————SS~~|mJ<br>~~pT~~|
|EAS(Tested )<br>~~——————————————————SS~~|~~Single Pulse Avalanche Energy Tested Value~~<br>~~——————————————————SS~~<br>~~a~~<br>~~ce A~~|1060<br>~~——————————————————SS~~<br>~~a~~<br>~~A~~||
|IAR<br>~~——————————————————SS~~|~~Avalanche Current~~<br>~~——————————————————SS~~<br>~~a~~<br>~~ce A~~|See Fig.12a, 12b, 15, 16<br>~~——————————————————SS~~<br>~~a~~<br>~~A~~|A|
|EAR|~~Repetitive Avalanche Energy~~<br>~~ce A~~||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ce A~~<br>~~ee~~|-55  to + 175<br>~~A~~<br>~~ee~~|°C<br>~~ee~~|
||Soldering Temperature, for 10 seconds<br>~~ee~~|300 (1.6mm from case )<br>~~ee~~||
||Mounting Torque, 6-32 or M3 screw<br>~~ee~~<br>~~a~~|10 lbf n (1.1N m)<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|



HEXFET[®] is a registered trademark of International Rectifier. 

* R_ θ is measured www.irf.com 

1 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|55<br>~~GO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~|–––|V<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~QO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~re~~|–––<br>~~GO~~<br>~~re~~<br>~~Gs~~|0.058<br>~~GO~~<br>~~re~~<br>~~es~~|–––<br>~~re~~|V/°C<br>~~QO~~<br>~~re~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~re~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Pe~~|–––<br>~~Gs ~~<br>~~Pe~~<br>~~Gn~~|4.2<br> ~~es~~<br>~~Pe~~<br>~~Gn~~|5.3<br>~~Pe~~<br>|mΩ<br>~~Pe~~<br>~~QO~~|VGS= 10V, ID= 95A<br>~~Pe~~<br>~~QO~~|
|VGS(th)|Gate Threshold Voltage<br>~~Pe~~<br>~~Rs~~|2.0<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~Gs~~|–––<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~es~~|4.0<br>~~Pe~~<br>~~Rs~~<br>|V<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|VDS= VGS, ID= 250µA<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~Rs~~<br>~~re~~|77<br>~~Rs~~<br>~~Gn~~<br>~~re~~<br>~~Gs~~<br>~~renee~~|–––<br>~~Rs~~<br>~~Gn ~~<br>~~re~~<br>~~es~~<br>~~renee~~|–––<br>~~Rs~~<br> <br>~~re~~<br>~~eee~~|S<br>~~Rs~~<br> ~~QO~~<br>~~re~~<br>~~eee~~|VDS= 25V, ID= 95A<br>~~Rs~~<br>~~QO~~<br>~~re~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~Gs ~~<br>~~ee~~<br>~~renee~~|–––<br> ~~es~~<br>~~ee~~<br>~~renee~~|20<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|VDS= 55V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~renee~~|–––<br>~~ee~~<br>~~renee~~|250<br>~~ee~~<br>~~eee~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee ~~<br>~~a~~<br>|200<br>~~ee~~<br> ~~eee~~<br>~~a~~<br>|nA<br>~~ee~~<br>~~eee~~<br>~~a~~|VGS= 20V<br>~~ee~~<br>~~ee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|TT~~<br>~~ee~~|–––<br>~~a~~<br>~~TT~~<br>~~ee~~|-200<br>~~a~~<br>~~TT~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~a~~<br>~~|TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|120<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|180<br>~~a~~<br>~~TT~~<br>~~es~~|nC<br>~~a~~|VGS= 10V<br>ID= 95A<br>VDS= 44V<br>~~a~~<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|53<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee ~~<br>~~es~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|ns<br>~~|~~|VDD= 28V<br>ID= 95A<br>RG= 2.6Ω<br>VGS= 10V<br>~~©~~<br>~~®~~|
|tr|Rise Time<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|160<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|140<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~<br>~~——-H~~|–––<br>~~ee~~<br>~~ee~~<br>~~——-H~~|150<br>~~ee~~<br>~~ee~~<br>~~——-H~~|–––<br>~~——-H~~|||
|LD|Internal Drain Inductance<br>~~ee ~~<br>~~——-H~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~——-H~~|5.0<br>~~ee~~<br> ~~ee~~<br>~~——-H~~|–––<br>~~——-H~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~®~~|
|LS|Internal Source Inductance<br>~~——-H~~|–––<br>~~——-H~~<br>~~ee~~|13<br>~~——-H~~<br>~~ee~~|–––<br>~~——-H~~|||
|Ciss|Input Capacitance<br>~~——-H~~<br>~~es~~|–––<br>~~——-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|5600<br>~~——-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~——-H~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1310<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|350<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~**e**~~|6550<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~**e**e~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~**e**~~<br>~~e~~|920<br>~~ee~~<br>~~es~~<br>~~**e**e~~<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~**e**~~<br>~~e~~|1750<br>~~**e**e~~<br>~~es~~|–––||VGS= 0V, VDS= 0V to 44V<br>~~@~~|



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.12mH RG = 25 Ω , IAS = 95A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V SoC I 5.5V bit<br>100<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100<br>o/" e a<br>10 4.5V 4.5V<br>orFTI eeLULA Pw ZAYH | eeeee<br>≤  60µs PULSE WIDTH ≤  60µs PULSE WIDTH<br>1 Itei Tj = 25°C PT | 10 OYW il Tj = 175°C<br>0.1 1 10 100 0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 140<br>TJ = 25°C TJ = 25°C<br>120<br>TJ = 175°C<br>| AAT 100 P| [|] yl<br>80<br>Ee e | lA Ee<br>100 T = 175°C<br>J<br>a A e<br>60<br>40<br>2 ee |e ee ee ee rn a Z Z|<br>VDS = 25V<br>≤  60µs PULSE WIDTH 20 VDS = 10V<br>10 380µs PULSE WIDTH<br>i ee<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 0<br>0 20 40 60 80 100<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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10000 20<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 95A VDS= 44V<br>8000 Crss   = Cgd  16 VDS= 28V<br>C = C + C<br>oss   ds  gd<br>Ciss<br>6000 Soy cr 12 aa .<br>a Y<br>4000 RU ll 8 a<br>Coss<br>2000 C T ey tt 4 vt |<br>FOR TEST CIRCUIT<br>Crss SEE FIGURE 13<br>Tt /<br>0<br>0 | e e [e] [e]<br>1 10 100 0 40 80 120 160 200<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T = 175°C 1000<br>J<br>100.0<br>100 100µsec<br>10.0<br>jf ff e et<br>——————— TJ = 25°C 10 ) Seer iimenanii<br>1.0<br>1 1msec<br>Tc = 25°C<br>Tj = 175°C 10msec<br>VGS = 0V Single Pulse DC<br>0.1 f p 0.1 ate tit<br>0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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200 2.5<br>LIMITED BY PACKAGE ID = 95A<br>VGS = 10V<br>150 P| 2.0 EE E EL<br>ra Z| | || Litt tl |<br>pf | | PLEA<br>100 1.5<br>P| f t tii t ttt<br>pT TA S LEE LAL EL<br>50<br>1.0<br>T EN<br>| FA<br>0 PIN oTe E HE-EHE-LE<br>0.5 T TTT TE<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>1<br>D = 0.50<br>0.1 0.20<br>0.10<br>0.05<br>0.01 0.02 R1 R1 R2 R2 Ri (°C/W)     τ i (sec)<br>— 0.01 ule τ J τ J S τ C τ 0.2529     0.00080 a<br>τ 1 τ 1 τ 2 τ 2 0.2368     0.014283<br>0.001 a 0 |e Ci= Ci τ i / Rii / Ri eeeeeeee<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>Pt 1. Duty Factor D = t1/t2<br>ee 2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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2000<br>15V<br>                 I<br>D<br>TOP          16A<br>                20A<br>VDS L DRIVER 1500 BOTTOM   95A<br>RG D.U.T +<br>- [V][DD]<br>IAS A 1000<br>20VVGS<br>tp 0.01 Ω<br>e e NE<br>Fig 12a.   Unclamped Inductive Test Circuit 500<br>. V(BR)DSS S NUnEE<br>tp<br>a T AS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>/ |<br>|<br>IAS 7<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V [a,]<br>QGS QGD<br>VG<br>oo,<br>Charge =<br>Fig 13a.   Basic Gate Charge Waveform<br>**----- End of picture text -----**<br>


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L<br>VCC<br>DUT<br>0 ca |<br>1K<br>Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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4.0<br>3.5<br>U TE<br>3.0<br>P N ET ID = 250µA<br>2.5 E LELN GLE<br>2.0<br>E LTLN EE<br>1.5 FL ELELELLN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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10000<br>1000 Duty Cycle = Single Pulse Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>100 0.01 case should Tj be allowed to<br>exceed Tjmax<br>0.05<br>0.10<br>10<br>LT<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>600 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>500 ID = 95A   Purely a thermal phenomenon and failure occurs at a<br>a     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>400<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>300 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>S ST<br>4. PD (ave) = Average power dissipation per single<br>200     avalanche pulse.<br>L ASALLE 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>100 6. Iav = Allowable avalanche current.<br>C LE ANN<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>S T TNS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

   - **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! la ple<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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**==> picture [381 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO son  035H (|<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line a DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC packages are not recommended for Surface Mount Application. 

**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified forIndustrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/2010 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFP1405PBF/power-mosfet-n-channel-55-v-160-a-5300-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfp1405pbf/mosfet-n-55v-160a-to-247ac/dp/8658382)
---

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