# Power MOSFET, N Channel, 150 V, 2.6 A, 0.185 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2725947/)

**URL**: https://novapart.co/products/IRFL4315TRPBF/power-mosfet-n-channel-150-v-26-a-0185-ohm-sot-223
**SKU**: IRFL4315TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2690
**Stock**: 1000+
**Lead Time**: 71 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.6A |
| Drain Source On State Resistance | 0.185ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725947/)

## PD - 95258A IRFL4315PbF 

**Applications** High frequency DC-DC converters 

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HEXFET ® Power MOSFET<br>ee VDSS RDS(on) max ID<br>ee 150V 185m @VGS ee  = 10V 2.6A<br>**----- End of picture text -----**<br>


## **Benefits** 

> e Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current Lead-Free 

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SOT-223<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~——~~|**Parameter**<br>~~——~~|**Max.**<br>~~——~~|**Units**<br>~~——~~|
|---|---|---|---|
|ID@ TA= 25°C<br>~~——~~<br>~~——————————~~|Continuous Drain Current, VGS@ 10V<br>~~——~~<br>~~——————————~~|2.6<br>~~——~~<br>~~——————————~~|A<br>~~——~~<br>~~——————————~~|
|ID@ TA= 70°C<br>~~——————————~~|Continuous Drain Current, VGS@ 10V<br>~~——————————~~|2.1<br>~~——————————~~||
|IDM<br>~~——————————~~<br>~~oo~~|Pulsed Drain Current<br>~~——————————~~<br>~~oo~~|21<br>~~——————————~~||
|PD@TA= 25°C<br>~~oo~~<br>~~i~~|Power Dissipation<br>~~oo~~<br>~~OOO~~<br>~~i~~|2.8<br>~~OOO~~<br>~~i~~|W<br>~~OOO~~<br>~~i~~|
|~~i~~<br>~~TOO~~|Linear DeratingFactor<br>~~i~~<br>~~TOO~~|0.02<br>~~i~~<br>~~OFS~~|W/°C<br>~~i~~<br>~~OFS~~|
|VGS<br>~~TOO~~|Gate-to-Source Voltage<br>~~TOO~~|± 30<br>~~OFS~~|V<br>~~OFS~~|
|dv/dt<br>~~TOO~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~TOO~~<br>~~pf~~|6.3<br>~~OFS~~|V/ns<br>~~OFS~~|
|TJ<br>TSTG<br>~~TOO~~<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~TOO~~<br>~~pf~~|-55  to + 150<br>~~OFS~~|°C<br>~~OFS~~|
|~~pf~~|Soldering Temperature, for 10 seconds<br>~~pf~~|300 (1.6mm from case )||



## **Thermal Resistance** 

|~~SN~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~SN~~|**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJA<br>~~SN~~|Junction-to-Ambient (PCB Mount, steady state)|–––|45|°C/W|



> Notes ® hrough © are on page 8 www.irf.com 

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## IRFL4315PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|~~ee~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~es~~|**Typ. **<br>es<br>~~ee~~|**Max.**<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|150<br>~~es ~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ<br>~~es~~<br>~~es~~|JBreakdown Voltage Temp. Coefficient –––     0.19   –––      V/°C    Reference to 25°C, I<br>~~es~~<br>~~es~~|–––     0.19   –––      V/°C    Reference to 25°C, I|–––     0.19   –––      V/°C    Reference to 25°C, I|–––     0.19   –––      V/°C    Reference to 25°C, I|–––     0.19   –––      V/°C    Reference to 25°C, I|–––     0.19   –––      V/°C    Reference to 25°C, ID= 1mA<br>~~®~~<br>~~®~~|
|RDS(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>|–––<br>|185<br>|mΩ<br>|VGS= 10V, ID= 1.6A<br>~~®~~<br>~~®~~|
|VGS(th)<br>~~es~~<br>~~es~~<br>~~ee~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~ee~~|3.0<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>|5.0<br>~~es~~<br>|V<br>~~es~~<br>|VDS= VGS, ID= 250µA<br>~~®~~|
|IDSS<br>~~ee~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~|~~TT<br>||–––<br>~~ee~~<br>~~eee~~<br>~~|~~|–––<br>~~eee~~<br>|25<br>~~eee~~<br>|µA<br>~~eee~~<br>TT<br>|VDS= 150V, VGS= 0V|
|||–––<br>~~ee~~<br>~~eee~~<br>~~|~~TT<br>||–––<br>~~eee~~<br>TT<br>|250<br>~~eee~~<br>TT<br>||VDS= 120V, VGS= 0V, TJ= 125°C|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee ~~<br>~~|~~<br>|~~TT~~|–––<br>~~ee~~<br> ~~eee~~<br>~~|~~<br>|~~TT~~|–––<br>~~eee~~<br><br>~~TT~~|100<br>~~eee~~<br><br>~~TT~~|nA<br>~~eee~~<br><br>~~TT~~|VGS= 30V|
||Gate-to-Source Reverse Leakage<br>|~~TT~~|–––<br>|~~TT~~|–––<br>~~TT~~|-100<br>~~TT~~||VGS= -30V|



**Dynamic @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>es<br>~~a~~|**Parameter**<br>es<br>~~a~~|**Min.**<br>es<br>~~ee~~<br>|**Typ. **<br>es<br>~~es~~<br>|**Max.**<br>es<br>|**Max.**<br>es<br>|**Units**<br>es|**Conditions**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~||3.5<br>~~ee~~<br>|–––<br>~~es~~<br>|–––<br>||S|VDS= 50V, ID= 1.6A|||
|Qg<br>~~a~~|Total Gate Charge<br>~~aa~~||–––<br>~~ee ~~<br>~~a~~<br>ee|12<br> ~~es~~<br>~~a~~<br>ee|19                 I<br>~~a~~||19                 I<br>nC|19                 ID= 1.6A<br>VDS= 120V<br>VGS= 10V|||
|Qgs|Gate-to-Source Charge<br>~~ee~~||–––<br>~~ee~~<br>ee|2.1<br>~~ee~~<br>ee|3.1<br>~~ee~~||||||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~||–––<br>ee<br>~~ee~~|6.8<br>ee<br>~~ee~~|10<br>~~ee~~||||||
|td(on)|Turn-On Delay Time<br>~~a~~||–––<br>~~a~~|8.4<br>~~a~~|–––<br>~~a~~||ns|VDD= 75V<br>ID= 1.6A<br>RG= 15Ω<br>VGS= 10V<br>®|||
|tr<br>a<br>ee<br>~~ee~~|Rise Time<br>~~es~~||–––<br>~~es~~<br>~~ee~~|21<br>~~es~~<br>~~ee~~|–––<br>~~es~~||||||
|td(off)<br>ee<br>~~ee~~<br>ER<br>~~a~~|Turn-Off Delay Time<br>~~es~~<br>~~eee~~<br>ER||–––<br>~~es~~<br>~~ee~~<br>~~eee~~|20<br>~~es~~<br>~~ee~~<br>~~eee~~|–––<br>~~es~~<br>~~eee~~||||||
|tf<br>ee<br>~~ee~~<br>ER<br>~~a~~|Fall Time<br>~~es~~<br>~~eee~~<br>ER||–––<br>~~es~~<br>~~ee~~<br>~~eee~~|19<br>~~es~~<br>~~ee~~<br>~~eee~~|–––<br>~~es~~<br>~~eee~~||||||
|Ciss<br>~~ee~~<br>ER<br>~~a~~|Input Capacitance<br>~~eee~~<br>ER||–––<br>~~ee~~<br>~~eee~~|420<br>~~ee~~<br>~~eee~~|–––<br>~~eee~~||pF<br>~~a~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>®|||
|Coss<br>~~ee~~<br>ER<br>~~a~~<br>ee|Output Capacitance<br>~~eee~~<br>ER||–––<br>~~ee ~~<br>~~eee~~|100<br> ~~ee~~<br>~~eee~~|–––<br>~~eee~~||||||
|Crss<br>ee<br>a|Reverse Transfer Capacitance||–––|25|–––||||||
|Coss<br>ee<br>a|Output Capacitance||–––|720|–––|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>a<br>a~~a~~|Output Capacitance<br>~~a~~||–––<br>~~a~~|48<br>~~a~~|–––<br>~~a~~|||VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz<br>~~a~~|||
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~a~~||–––<br>~~a~~|98<br>~~a~~|–––<br>~~a~~|||VGS= 0V, VDS= 0V to 120V<br>~~a~~®|||
|**Avalanche Characteristics**<br>~~a~~|||||||||||
|a<br>es||**Parameter**<br>a<br>ee||||**Typ.**<br>a<br>QO|||**Max.**<br>a|**Units**<br>a|
|EAS<br>es<br>es||Single Pulse Avalanche Energy<br>ee<br>a||||–––<br>QO<br>|||38<br>|mJ<br>|
|IAR<br>es<br>es||Avalanche Current<br>ee<br>a©||||–––<br>QO<br>©|||3.1<br>©|A<br>©|



## **Avalanche Characteristics** 

|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>38<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>3.1<br>A<br>a<br>esee<br>QO<br>esa©|
|---|



**Diode Characteristics** 

|~~a~~|**Parameter**<br>|**Min. **<br>|**Typ. **<br>|**Max.**<br>|**Units**<br>|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~a$F"~~|Continuous Source Current<br>(Body Diode)<br>~~$F"~~|–––<br>~~$F"~~|–––<br>~~$F"~~|2.6<br>~~$F"~~|~~$F"~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>i|
|ISM<br>~~$F"~~|Pulsed Source Current<br>(BodyDiode)<br>~~$F"~~|–––<br>~~$F"~~|–––<br>~~$F"~~|21<br>~~$F"~~|||
|VSD<br>~~|~~<br>~~es~~|Diode Forward Voltage<br>~~|~~<br>~~es~~|–––<br>~~|~~|–––<br>~~|~~|1.5<br>~~|~~|V<br>~~|~~|TJ= 25°C, IS= 2.1A, VGS= 0V<br>~~®~~<br>5|
|trr<br>~~|~~<br>~~es~~|Reverse Recovery Time<br>~~|~~<br>~~es~~|–––<br>~~|~~|61<br>~~|~~|91<br>~~|~~|ns<br>~~|~~|TJ= 25°C, IF= 1.6A<br>di/dt = 100A/µs<br>~~®~~<br>5|
|Qrr<br>~~es~~|Reverse RecoveryCharge<br>~~es~~|–––|160|240|nC||



## IRFL4315PbF 

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100<br>  VGS<br>TOP          15V<br>                  12V<br>                  10V<br>                  8.0V 1 or | or<br>10               7.0V 12 eel<br>                  6.5V<br>                  6.0V<br>BOTTOM   5.5V<br>1 5.5V<br>7 0 ee |<br>0.1<br>EHH HE EHF HH<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.01 =PCE e mail e<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br>  VGS<br>TOP          15V<br>                  12V<br>                  10V<br>1 nl |<br>                  8.0V<br>                  7.0V Te<br>                  6.5V<br>10              6.0V<br>BOTTOM   5.5V<br>5.5V<br>1<br>4  Fo<br>P 27s |<br>20µs PULSE WIDTH<br>Tj = 150°C<br>0.1 VeYt iil|<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100.00 2.5<br>I D = 2.6A<br>a — ———es ee es ee Po LL<br>2.0<br>P P a th<br>a (|<br>1.5<br>10.00 TJ = 150°C ae OTe<br>i ae eee eee eee<br>Ss e} PE<br>1.0<br>a TJ = 25°C<br>0.5<br>= VDS = 50V | EGR<br>1.00 pep fp 20µs PULSE WIDTH 0.0 P es ET eE V GS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>5.0 6.0 7.0 8.0 9.0 10.0 T  , Junction TemperatureJ (    C)°<br>VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>=n=e Crss   = Cgd<br>C = C + C<br>a oss   ds  gd<br>1000<br>| Po o<br>C<br>KN iss ee ee<br>ana)<br>100 Coss<br>O N  L T<br>a ee ee a eeeeeel<br>C<br>rss<br>er|aa<br>10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 100<br>pt T  = 150      CJ | ° | {oi | jot tf<br> 10<br>e ee<br>a a<br>T  = 25      CJ °<br>ey A<br> 1<br>ee V      = 0 V GS<br>0.1 Pine Lt |<br>0.0 0.5 1.0 1.5 2.0 2.5<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID= 1.6A<br>10 TF VDS= 120V T<br>-_ ao<br>a VDS= 75V </an<br>8 VDS= 30V<br>p t 7 /Aa<br>6 /\<br>ee a e/a<br>4<br>|  fT yt |<br>2<br>FOR TEST CIRCUIT<br>SEE FIGURE 13<br>Ae (Ze<br>0<br>0 2 4 6 8 10 12 14<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>a ee |<br>10<br>aSA<br>100µsec<br>1 HHH il<br>1msec<br>Tc = 25°C<br>10msec<br>Tj = 150°C<br>pp Single Pulse<br>0.1 ll<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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3.0 Pt tT | ft | tt tT J Ro<br>2.5<br>pp EE Ps<br>PISA | Et Ves DUT<br>2.0<br>pit PN Re -<br>Pot tT PA<br>1.5 Pt tT | | hd|UN ET TL + tov<br>≤ 1<br>aaa mii ≤ 0.1 %<br>1.0<br>CEES :<br>Fig 10a.   Switching Time Test Circuit<br>0.5 Pi tt | dt dt dT TA<br>VDS<br>Tr 90% ———<br>0.0 Pt tt} td} | | tt y /<br>25 50 75 100 125 150 |<br>TA , Ambient Temperature (°C) °<br>10% /\_X<br>Fig 9.   Maximum Drain Current Vs. VGS 1 \ ao\ |<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current Vs. Ambient Temperature 

**Fig 10b.** Switching Time Waveforms 

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 100<br>a|<br>D = 0.50<br>p st a comer —— ce |<br> 10 eee 0.20 e se?00 | ll<br>ee ae ane ee ee eT<br>0.10<br>e A<br>a 0.05 =|__| 7 araate te<br> 1 e= 0.02 ee)artaN | P DM<br>t 1<br>0.01<br>a t 2<br>aaa<br>SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>pean See lin 2. Peak T J = P DM x  Z thJA + T A<br>0.1 Zan LAT LIE Le<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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240 4000<br>220 e e e e 3500<br>C o) 3000 E E<br>200<br>2500<br>180 VGS = 10V<br>2000<br>ePe z A REEEEE<br>160<br>1500<br>140 aa<br>1000<br>ID = 2.6A<br>f e<br>120100 e s ee 5000<br>0 5 10 15 20 25 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0<br>ID , Drain Current (A) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50K Ω<br>12V .2 µ F<br>.3 µ F QGS QGD<br>D.U.T. +-VDS VG 100<br>VGS ID<br>3mA 7 Charge | | tt | lt TOP 1.4A<br>oe IG ID | : Set 2.5A<br>Current Sampling Resistors 80 AN BOTTOM 3.1A<br>Fig 14a&b.   Basic Gate Charge Test Circuit B NR<br>and Waveform 60 PN Ef<br>40 KUN EE<br>15V<br>V(BR)DSS<br>tp VDS L DRIVER 20<br>pS<br>R G D.U.T +<br>IAS - [V][DD] A<br>aa 20V 0 ao<br>I AS y‘} tp 0.01 Ω 25 NNO 50 NP 75 we an 100 125 150<br>Starting Tj, Junction Temperature (   C)°<br>Fig 15c.   Maximum Avalanche Energy<br>Fig 15a&b.   Unclamped Inductive Test circuit<br>Vs. Drain Current<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (m<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

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## IRFL4315PbF 

## HEXFET PRODUCT MARKING 

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THIS IS AN IRFL014<br>**----- End of picture text -----**<br>


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INTERNATIONAL —1 as | _ PART NUMBER LOT CODE<br>RECTIFIER FL014 AXXXX<br>LOGO 314P<br>\ron<br>Wu “| DATE CODE A =  ASSEMBLY SITE<br>CI CI Co (YYWW) CODE<br>YY =  YEAR<br>TOP WW =  WEEK BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## IRFL4315PbF 

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**----- Start of picture text -----**<br>
2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>+ a<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>VL ir 1.50 (.059)      TYP.<br>FEED DIRECTION<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475) ae<br>11.90 (.469)<br>NOTES :<br>1. CONTROLLING DIMENSION: MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. /<br>13.20 (.519) 15.40 (.607)<br>° 12.80 (.504) 11.90 (.469) _T<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| OO |<br>NOTES : lL 18.40 (.724)<br>1.   OUTLINE COMFORMS TO EIA-418-1.       MAX.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) IE 4<br>; 3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>a 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 7.8mH RG = 25 Ω , IAS = 3.1A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board. © Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. © ISD ≤ 1.6A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFL4315TRPBF/power-mosfet-n-channel-150-v-26-a-0185-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfl4315trpbf/mosfet-n-ch-150v-2-6a-sot-223/dp/2725947)
---

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