# Power MOSFET, N Channel, 100 V, 1.6 A, 0.2 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2101416RL/)

**URL**: https://novapart.co/products/IRFL4310TRPBF/power-mosfet-n-channel-100-v-16-a-02-ohm-sot-223
**SKU**: IRFL4310TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2300
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.2ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2101416RL/)

PD - 95144 

## IRFL4310PbF 

## HEXFET[®] Power MOSFET 

Surface Mount Dynamic dv/dt Rating Fast  Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Lead-Free 

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D<br>VDSS = 100V<br>R  = 0.20 Ω<br>DS(on)<br>G<br>ID = 1.6A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application. 

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S O T -223<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~Re~~<br>~~—$————~~|**Parameter**<br>~~—$————~~|**Max.**<br>~~—$————~~|**Units**<br>~~ae~~|
|---|---|---|---|
|ID@ TA= 25°C<br>~~Re~~<br>~~—$————~~|Continuous Drain Current, VGS@ 10V**<br>~~—$————~~|2.2<br>~~—$————~~|A<br>~~ae~~<br>~~hh~~|
|ID@ TA= 25°C<br>~~Re~~<br>~~—$————~~|Continuous Drain Current, VGS@ 10V*<br>~~—$————~~|1.6<br>~~—$————~~||
|ID@ TA= 70°C<br>~~—$————~~<br>~~a~~|Continuous Drain Current, VGS@ 10V*<br>~~—$————~~<br>~~a~~|1.3<br>~~—$————~~<br>~~a~~||
|IDM<br>~~—$————~~<br>~~hh~~|Pulsed Drain Current<br>~~—$————~~<br>~~hh~~|13<br>~~—$————~~<br>~~hh~~||
|PD@TA= 25°C<br>~~—$————~~<br>~~hh~~|Power Dissipation(PCB Mount)**<br>~~—$————~~<br>~~hh~~|2.1<br>~~—$————~~<br>~~hh~~<br>~~[J~~|W<br>~~ae~~<br>~~hh~~|
|PD@TA= 25°C<br>~~>~~|Power Dissipation(PCB Mount)*<br>~~>~~|1.0<br>~~>~~|W<br>~~>~~|
|~~Ts~~<br>~~CE~~|Linear DeratingFactor(PCB Mount)*<br>~~Ts~~|8.3<br>~~Ts~~<br>~~ee~~|mW/°C<br>~~Ts~~<br>~~ee~~|
|VGS<br>~~CE~~|Gate-to-Source Voltage|± 20<br>~~ee~~|V<br>~~ee~~|
|EAS<br>~~CE~~|Single Pulse Avalanche Energy|47<br>~~ee~~|mJ<br>~~ee~~|
|IAR<br>~~CE~~<br>~~i~~|Avalanche Current<br>~~i~~|1.6<br>~~ee~~<br>~~i~~|A<br>~~ee~~<br>~~i~~|
|EAR<br>~~i~~|Repetitive Avalanche Energy<br>*<br>~~i~~|0.10<br>~~i~~|mJ<br>~~i~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



- When mounted on FR-4 board using minimum recommended footprint. 

- ** When mounted on 1 inch square copper board, for comparison with other SMD devices. 

www.irf.com 

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04/22/04 

## IRFL4310PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>rs|**Min.**<br>rs<br>red<br>Gs|**Typ. **<br>rs<br>rs<br>Os|**Max.**<br>rs<br>ss<br>Os|**Units**<br>rs<br>ss<br>GQ|**Conditions**<br>rs<br>GQ|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>rs<br>Rs|100<br>rs<br>red <br>Rs<br>Gs<br>Gs|–––<br>rs<br> rs <br>Rs<br>Os<br>GsQQ|–––<br>rs<br> ss<br>Rs<br>Os<br>QQ|V<br>rs<br>ss<br>Rs<br>GQ<br>QQ|VGS= 0V, ID= 250µA<br>rs<br>Rs<br>GQ<br>QQ|
|(BR)DSS<br>∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>Rs<br>rs|–––<br>Rs<br>Gs<br>rs<br>Gs<br>ee|0.12<br>Rs<br>Os<br>rs<br>GsQQ<br>ee|–––<br>Rs<br>Os<br>rs<br>QQ<br>ee|V/°C<br>Rs<br>GQ<br>rs<br>QQ<br>ee|Reference to 25°C, ID= 1mA<br>Rs<br>GQ<br>rs<br>QQ|
|(BR)DSS<br>RDS(on)|Breakdown Voltage Temp. Coefficient<br>Static Drain-to-Source On-Resistance<br>rs<br>ee|–––<br>rs<br>Gs<br>ee<br>ee|–––<br>rs<br>GsQQ<br>ee<br>ee|0.20<br>rs<br>QQ<br>ee<br>ee|Ω<br>rs<br>QQ<br>ee<br>ee|VGS= 10V, ID= 1.6A<br>rs<br>QQ<br>ee|
|VGS(th)|Gate Threshold Voltage<br>ee|2.0<br>ee<br>ee <br>Gs|–––<br>ee<br> ee<br>Gs|4.0<br>ee<br>ee <br>GQ|V<br>ee<br> ee<br>GQ|VDS= VGS, ID= 250µA<br>ee<br>GQ|
|gfs|Forward Transconductance<br>r|1.5<br>r<br>Gs|–––<br>rs<br>Gs|–––<br>s<br>GQ|S<br>s<br>GQ|VDS= 50V, ID= 0.80 A<br>s<br>GQ|
|IDSS|Drain-to-Source Leakage Current<br>r<br>~~a~~<br>[[-<br>||–––<br>r<br>Gs<br>~~a~~|–––<br>rs<br>Gs <br>~~a~~<br>a|25<br>s<br> GQ<br>~~a~~<br>ee|µA<br>s<br>GQ<br>~~a~~<br>ee<br>;[_|VDS= 100V,VGS= 0V<br>s<br>GQ<br>~~a~~|
|||–––<br>~~a~~<br>||–––<br>~~a~~<br>a<br>|250<br>~~a~~<br>ee<br>;<br>||VDS= 80V, VGS= 0V, TJ= 125°C<br>~~a~~<br>[_|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~<br>[[-<br>|fT|–––<br>~~a~~<br>|fT|–––<br>~~a~~<br>a<br>fT|100<br>~~a~~<br>ee<br>;<br>fT|nA<br>~~a~~<br>ee<br>;[_|VGS= 20V<br>~~a~~<br>[_|
||Gate-to-Source Reverse Leakage<br>[[-<br>|fT|–––<br>|fT|–––<br>a<br>fT|-100<br>ee<br>;<br>fT||VGS= -20V<br>[_|
|Qg|Total Gate Charge<br>[[-<br>|fT|–––<br>|fT|17<br>a <br>fT|25<br> ee<br>;<br>fT|nC<br>ee<br>; [_|ID= 1.6A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13<br>[_<br>®|
|g<br>Qgs|Gate-to-Source Charge<br>a<br>ee|–––<br>a<br>ee|2.1<br>a<br>ee|3.1<br>a|||
|gs<br>Qgd|Gate-to-Drain ("Miller") Charge<br>ee|–––<br>ee|7.8<br>ee|12|||
|td(on)|Turn-On DelayTime<br>ee<br>ee<br>PC|–––<br>ee<br>ee<br>|7.8<br>ee<br>ee<br>|–––<br>ee<br>|ns<br>Fall Time                                                –––      20      –––               R|VDD= 50V<br>ID= 1.6A<br>RG= 6.2Ω<br>Fall Time                                                –––      20      –––               RD= 31Ω,See Fig. 10<br>®<br>®|
|tr|Rise Time<br>PC~~—CCO~~<br>a|–––<br>~~—CCO~~|18<br>~~—CCO~~|–––<br>~~—CCO~~|||
|td(off)|Turn-Off Delay Time<br>PC<br>a|–––<br>|34<br>|–––<br>|||
|tfFall Time                                                –––      20      –––               R|Fall Time                                                –––      20      –––               R<br>aa<br>**e**e|Fall Time                                                –––      20      –––               R<br>e|Fall Time                                                –––      20      –––               R<br>eee|Fall Time                                                –––      20      –––               R<br>eee|||
|Ciss|Input Capacitance<br>a<br>**e**e|–––<br>e<br>ee|330<br>eee|–––<br>eee|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>®|
|Coss|Output Capacitance<br>**e**e<br>s|–––<br>e<br>s<br>ee|92<br>eee<br>s|–––<br>eee|||
|Crss|Reverse Transfer Capacitance<br>**e**e|–––<br>e<br>ee|54<br>eee|–––<br>eee|||



## **Source-Drain Ratings and Characteristics** 

|~~es~~|**Parameter**<br>~~re~~|**Min.**<br>~~re re~~|**Typ. **<br>~~re~~|**Max.**<br>~~es~~|**Units**<br>~~es~~|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~es~~|Continuous Source Current<br>(Body Diode)<br>~~re~~|–––<br>~~re re ~~|–––<br> ~~re ~~|0.91<br> ~~es ~~|A<br> ~~es~~<br>~~OO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM|Pulsed Source Current<br>(BodyDiode)|–––|–––|13<br>~~OO~~|||
|VSD<br>~~GO~~|Diode Forward Voltage<br>~~GO~~|–––<br>~~GO~~|–––<br>~~GO~~|1.3<br>~~GO~~<br>~~OO~~|V<br>~~GO~~<br>~~OO~~|TJ= 25°C, IS= 1.6A, VGS= 0V<br>~~GO~~|
|trr<br>~~Se~~<br>~~es~~|Reverse Recovery Time<br>~~Se~~|–––<br>~~Se~~|72<br>~~Se~~|110<br>~~OO~~<br>~~Se~~|ns<br>~~OO~~<br>~~Se~~|TJ= 25°C, IF= 1.6A<br>di/dt = 100A/µs<br>~~Se~~<br>~~®~~|
|Qrr<br>~~Se~~<br>~~es~~|Reverse RecoveryCharge<br>~~Se~~|–––<br>~~Se~~|210<br>~~Se~~|320<br>~~Se~~|nC<br>~~Se~~||



## **Notes:** 

© Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

6) ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 

VDD = 25V, starting TJ = 25°C, L = 9.2 mH 

RG = 25 Ω , IAS = 3.2A. (See Figure 12) 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

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## IRFL4310PbF 

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## IRFL4310PbF 

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## IRFL4310PbF 

## SOT-223 (TO-261AA) Package Outline 

Dimensions are shown in milimeters (inches) 

## SOT-223 (TO-261AA) Part Marking Information 

## HEXFET PRODUCT MARKING 

THIS IS AN IRFL014 

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|| PART NUMBER LOT CODE<br>INTERNATIONAL<br>RECTIFIER FL014<br>AXXXX<br>LOGO 314P<br>DATE CODE A =  ASSEMBLY SITE<br>HEU | (YYWW) CODE cE<br>YY =  YEAR<br>WW =  WEEK<br>TOP BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


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## IRFL4310PbF 

## SOT-223 (TO-261AA) Tape & Reel Information 

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2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>O o © als oo ¢<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>Oo Gl fsrks 1.50 (.059)<br>      TYP.<br>FEED  D IR EC T IO N<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>— 12.10 (.475) Ei<br>11.90 (.469)<br>NO TE S :<br>1. C O NT RO LLIN G  D IM E N SIO N : MILLIM E TER .<br>2. O U TLIN E  C O N FO R M S TO  E IA-481 &  EIA -541.<br>3. E AC H  O 330.00 (13.00) R E EL CO N TA IN S 2,500 D E VIC ES . /<br>**----- End of picture text -----**<br>


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13.20 (.519) 15.40 (.607)<br>7 12.80 (.504) 11.90 (.469) ie<br>4<br>| 330.00 50.00 (1.969)<br>(13.000)       M IN .<br>  M AX.<br>N O TES  : 18.40 (.724)<br>      M AX.<br>1.   O UT LIN E C O M FO R M S TO  EIA-418-1.<br>2.   CO N TR O LLIN G  D IM EN SIO N: M ILLIM ETER .. 14.40 (.566) 4<br>3.   DIM EN SIO N  M EAS UR ED  @  HU B. 12.40 (.488)<br>4.   IN CLU D ES FLA NG E D ISTO R TIO N  @  O U TER  ED G E . 3<br>**----- End of picture text -----**<br>


- s 4.   IN CLU D ES FLA NG E D ISTO R TIO N  @  O U TER  ED G E . 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

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