# Power MOSFET, N Channel, 55 V, 5.1 A, 0.0575 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2725945/)

**URL**: https://novapart.co/products/IRFL024ZTRPBF/power-mosfet-n-channel-55-v-51-a-00575-ohm-sot-223
**SKU**: IRFL024ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2610
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0462ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.1A |
| Drain Source On State Resistance | 0.0575ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725945/)

## PD - 95312A 

## IRFL024ZPbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 57.5m Ω<br>DS(on)<br>G<br>ID = 5.1A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.  Additional features of this design  are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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SOT-223<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~en~~<br>~~—————~~|5.1<br>~~en~~<br>~~oe~~|A<br>~~oe~~<br>|
|ID@ TA= 70°C<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~—————~~<br>~~a~~|4.1<br>~~oe~~<br>||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~—————~~<br>~~a~~|41<br>~~oe~~<br>||
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~aa~~|2.8<br>~~a~~|~~a~~|
|PD@TA= 25°C<br><br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~<br>~~a~~<br>~~©~~|1.0<br>~~a~~<br>~~a~~|W<br>~~a~~<br>~~a~~|
|~~a~~|Linear Derating Factor<br>~~a~~<br>~~a~~<br>~~©~~|0.02<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~©~~<br>~~Pe~~|± 20<br>~~Pe~~<br>~~eS~~|V<br>~~Pe~~<br>~~rae~~|
|EAS(Thermallylimited)|Single Pulse Avalanche Energy<br>~~Pe~~<br>~~a~~|13<br>~~Pe~~<br>~~a~~<br>~~eS~~|mJ<br>~~Pe~~<br>~~a~~<br>~~rae~~<br><br>~~ee~~|
|EAS(Tested)<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~a~~<br>~~SO~~<br>~~a~~|32<br>~~a~~<br>~~eS~~<br>~~SO~~<br>||
|IAR<br>~~a~~|Avalanche Current<br>~~aEe~~|See Fig.12a, 12b, 15, 16<br>~~eS ~~<br>~~Ee~~|A<br> ~~rae~~<br>~~Ee~~<br>~~ee~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~aEe~~||mJ<br>~~Ee~~<br>~~ee~~|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~Ee~~|-55  to + 150<br>~~Ee~~|°C<br>~~Ee~~<br>~~ee~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~ds~~|**Typ. **<br>~~ds~~|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|55<br>~~es~~<br>~~ds~~<br>~~rs~~|–––<br>~~es~~<br>~~ds~~<br>~~rs~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~Ps~~|–––<br>~~es~~<br>~~ds~~<br>~~Ps~~<br>~~rs~~<br>~~Sd~~|0.053<br>~~es~~<br>~~ds~~<br>~~Ps~~<br>~~rs~~<br>~~sd~~|–––<br>~~es~~<br>~~Ps~~<br>~~sd~~|V/°C<br>~~es~~<br>~~Ps~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~Ps~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Ps~~<br>~~es~~|–––<br>~~Ps~~<br>~~rs~~<br>~~es~~<br>~~Sd~~<br>~~ds~~|46.2<br>~~Ps~~<br>~~rs~~<br>~~es~~<br>~~sd~~<br>~~ds~~|57.5<br>~~Ps~~<br>~~es~~<br>~~sd~~|mΩ<br>~~Ps~~<br>~~es~~|VGS= 10V, ID= 3.1A<br>~~Ps~~<br>~~es~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|2.0<br>~~Sd ~~<br>~~es~~<br>~~ds~~<br>~~rs~~|–––<br> ~~sd~~<br>~~es~~<br>~~ds~~<br>~~rs~~|4.0<br>~~sd~~<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~es~~|
|gfs|Forward Transconductance<br>~~es~~<br>~~Ps~~|6.2<br>~~es~~<br>~~ds~~<br>~~Ps~~<br>~~rs~~<br>~~|~~|–––<br>~~es~~<br>~~ds~~<br>~~Ps~~<br>~~rs~~<br>~~|~~<br>~~|~~|–––<br>~~es~~<br>~~Ps~~<br>~~|~~<br>|S<br>~~es~~<br>~~Ps~~<br>~~|~~|VDS= 25V, ID= 3.1A<br>~~es~~<br>~~Ps~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Ps~~<br>~~PE~~|–––<br>~~Ps~~<br>~~rs~~<br>~~PE~~<br>~~|~~|–––<br>~~Ps~~<br>~~rs~~<br>~~PE~~<br>~~|~~<br>~~|~~|20<br>~~Ps~~<br>~~PE~~<br>~~|~~<br>|µA<br>~~Ps~~<br>~~PE~~<br>~~|~~|VDS= 55V, VGS= 0V<br>~~Ps~~<br>~~PE~~|
|||–––<br>~~PE~~<br>~~|~~|–––<br>~~PE~~<br>~~|~~<br>~~|et~~|250<br>~~PE~~<br>~~|~~<br>~~et~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~PE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~PE~~<br>~~a~~|–––<br>~~PE~~<br>~~|~~<br>~~a~~|–––<br>~~PE~~<br>~~|~~<br>~~|et~~<br>~~a~~|200<br>~~PE~~<br>~~|~~<br>~~et~~<br>~~a~~|nA<br>~~PE~~<br>~~|~~<br>~~a~~|VGS= 20V<br>~~PE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~PTT~~<br>~~ee~~|–––<br>~~a~~<br>~~PTT~~|-200<br>~~a~~<br>~~PTT~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>|9.1<br>~~es~~|14<br>~~es~~|nC|VGS= 10V<br>ID= 3.1A<br>VDS= 44V<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|1.9<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|3.9|–––|||
|td(on)|Turn-On DelayTime<br>~~ee ~~<br>~~es~~|–––<br>~~es~~<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|7.8<br>~~es~~|–––<br>~~es~~|ns|VDD= 28V<br>ID= 3.1A<br>RG= 53Ω<br>VGS= 10V<br>~~®~~<br>~~®~~|
|tr|Rise Time<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~**es**~~|21<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~**es**~~|30<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~**es**~~<br>~~es~~|23|–––|||
|Ciss|Input Capacitance<br>~~es~~<br>~~es~~|–––<br>~~**es**~~<br>~~es~~<br>~~es~~<br>~~es~~|340<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~®~~|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|68<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|39<br>~~es~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|210<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|55<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~®~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|93|–––||VGS= 0V, VDS= 0V to 44V<br>~~®~~|



©) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive  avalanche performance. 

® Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

- @© Limited by TJmax, starting TJ = 25°C, L = 2.8mH This value determined from sample failure population. 

This value determined from sample failure population. 100% tested to this value in production. 

- RG = 25 Ω , IAS = 3.1A, VGS =10V. 

Part not recommended for use above this value. @ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

- @ When mounted on 1 inch square copper board. 

When mounted on FR-4 board using minimum 

- ® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

recommended footprint. 

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100<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V ee<br>6.0V ) gaaPl gaaPlPl<br>5.5V<br>10 5.0V f=<br>BOTTOM 4.5V eH||<br>4.5V<br>ge |<br>arVV Ye<br>1<br>30µs PULSE WIDTH<br>Tj = 150°C<br>0.1 Crrr i t il I<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V Set 7.0V ee<br>6.0V YA | 6.0V ) gaaPl gaaPlPl<br>5.5V 5.5V<br>5.0V Yl 10 5.0V f=<br>BOTTOM 4.5V aan BOTTOM 4.5V eH||<br>10 ye L U 4.5V<br>YY ||| ge |<br>O f ee arVV Ye<br>1<br>4.5V<br>30µs PULSE WIDTH 30µs PULSE WIDTH<br>1 rema il Tj = 25°C 0.1 Crrr i t Tj = 150°C il I<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 12<br>a<br>|} |J TJ = 25°C<br>ee ee ee ee ee ee 10 ——§<—$ —_<br>|e a} T = 150°C 8 Le<br>J<br>10 AA LE ] 6 O e[| TJ = 150°C<br>YT Jf<br>Ey 2 6 ee ee ee ee ee /<br>F A tr 4 M w |<br>T = 25°C<br>J<br>ee ee<br>PAF oy ff | 2 f it<br>VDS = 25V VDS = 10V<br>30µs PULSE WIDTH<br>1.0 Py  pp 0 Ae<br>4 5 6 7 8 9 10 0 2 4 6 8 10 12<br>ID,Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>1000<br>C<br>iss<br>Coss<br>100<br>Crss<br>10 PETE EET<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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100<br>T = 150°C<br>J<br>10<br>T = 25°C<br>J<br>VGS = 0V<br>1 ee ee<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12.0<br>ID= 3.1A<br>10.0 VDS= 44V<br>VDS= 28V<br>8.0 VDS= 11V<br>6.0<br>4.0<br>2.00.0 Ji ttt.<br>0 2 4 6 8 10<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10<br>100µsec<br>1<br>TA = 25°C 1msec<br>Tj = 150°C<br>Single Pulse 10msec<br>0.1 aaa<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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6 2.0<br>ID = 3.1A<br>5 VGS = 10V<br>4 ap i | Nfd 1.5 SA EoeeevdeLTY<br>3 | IN TELL AAA.<br>2 1.0<br>S EEN] E EE<br>1 | | | NO E LLE<br>0 P| | | iN 0.5 LEE EE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br> TA ,Ambient Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Ambient Temperature vs. Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02 R1 R1 R2 R2 R3R3 Ri (°C/W)     τ i (sec)<br>0.01 τ J τ J τ C τ 5.0477     0.000463<br>τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 19.9479   0.636160<br>0.1 A SINGLE PULSE Ci= Ci τ i / Rii / Ri 20.0169   21.10000<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Fadl at i al als 0d OOOO<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>voll 20VVGS<br>tp 0.01 Ω<br><I.<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_. tp<br>;<br>IAS a a<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>VG<br>fo<br>| 4<br>Charge<br>Fig 13a.   Basic Gate Charge Waveform<br>=<br>L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


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Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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60<br>ID<br>TOP         0.77A<br>50<br>0.89A<br>BOTTOM 3.1A<br>VELL<br>40<br>30<br>K OR<br>20<br>N V<br>10<br>N IT<br>0<br>25 TSA 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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4.0 L EE EEE<br>3.5<br>mw<br>3.0<br>ID = 250µA<br>PS T<br>2.5 E E LL ENE<br>FLLLLLELB<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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10<br>Duty Cycle = Single Pulse<br>PN a ee EeEET Allowed avalanche Current vs  ET<br>1 0.01 avalanche  pulsewidth,  tav  il<br>S O) [imate] ea assuming  ee ∆ Tj = 25°C due to  eee<br>avalanche losses<br>0.05<br>0.10<br>0.1<br>PAI Cees o e<br>LTH EET EE<br>0.01<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>14 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>G ma TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>12 N ie BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>m wa ID = 3.1A   Purely a thermal phenomenon and failure occurs at a<br>i e..Q°gbxX>=e     temperature far in excess of Tjmax. This is validated for<br>10     every part type.<br>Pet IN E E 2. Safe operation in Avalanche is allowed as long asTjmax is<br>R NR   not exceeded.<br>8<br>N E EN 3. Equation below based on circuit and waveforms shown in<br>6 P P otNENEEINEL INGET |fe 4. P    avalanche pulse.  Figures 12a, 12b.D (ave) = Average power dissipation per single<br>4 ee eN 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>Pet | INE [EERE]<br>6. Iav = Allowable avalanche current.<br>2 P oe EF 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>P et ttEE AEtT EN     Tjmax (assumed as 25°C in Figure 15, 16).<br>0 PE tT | |RPNREINOWN   tav = Average time in avalanche.<br>25 50 75 100 125 150   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## HEXFET PRODUCT MARKING 

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THIS IS AN IRFL014<br>**----- End of picture text -----**<br>


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as PART NUMBER LOT CODE<br>INTERNATIONALRECTIFIER i FL014 2 AXXXX<br>LOGO 314P<br>fro n<br>Tu DATE CODE A =  ASSEMBLY SITE<br>Co Cc) Cc) (YYWW) CODE<br>YY =  YEAR<br>TOP WW =  WEEK BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

9 

**==> picture [351 x 353] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>- T<br>OO oO 6/9 oo ©<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>EN) Gf 7.10 (.279) 1 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475) co<br>11.90 (.469)<br>NOTES :<br>1. CONTROLLING DIMENSION: MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. /<br>13.20 (.519) 15.40 (.607)<br>, 12.80 (.504) 11.90 (.469) IP<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| OO |<br>NOTES : iL 18.40 (.724)<br>      MAX.<br>1.   OUTLINE COMFORMS TO EIA-418-1.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) IE 4<br>3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


- ao 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFL024ZTRPBF/power-mosfet-n-channel-55-v-51-a-00575-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfl024ztrpbf/mosfet-n-ch-55v-5-1a-sot-223/dp/2725945)
---

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