# Power MOSFET, N Channel, 55 V, 2.8 A, 0.075 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2468031RL/)

**URL**: https://novapart.co/products/IRFL024NTRPBF/power-mosfet-n-channel-55-v-28-a-0075-ohm-sot-223
**SKU**: IRFL024NTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7570
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.8A |
| Drain Source On State Resistance | 0.075ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468031RL/)

Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

## HEXFET[®] Power MOSFET 

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**----- Start of picture text -----**<br>
D<br>VDSS = 55V<br>R  = 0.075Ω<br>DS(on)<br>G<br>ID = 2.8A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application. 

**==> picture [46 x 9] intentionally omitted <==**

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SOT-223<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|OT<br>~~RsGO~~|**Parameter**<br>OT<br>~~GO~~|**Max.**<br>OT<br>~~GO~~|**Units**<br>OT|
|---|---|---|---|
|ID@ TA= 25°C<br>~~RsGO~~|Continuous Drain Current, VGS@ 10V**<br>~~GO~~|4.0<br>~~GO~~|*<br>~~J~~|
|ID@ TA= 25°C<br>~~RsGO~~<br>~~a~~<br>_?dT2aH1T.WTJWH_1—#11————|Continuous Drain Current, VGS@ 10V*<br>~~GO~~<br>~~a~~<br>_?dT2aH1T.WTJWH_1—#11————|2.8<br>~~GO~~<br>~~a~~<br>_?dT2aH1T.WTJWH_1—#11————||
|ID@ TA= 70°C<br>_?dT2aH1T.WTJWH_1—#11————|Continuous Drain Current, VGS@ 10V*<br>_?dT2aH1T.WTJWH_1—#11————|2.3<br>_?dT2aH1T.WTJWH_1—#11————||
|IDM<br>~~©~~<br>~~OO,~~|Pulsed Drain Current<br>~~©~~<br>~~OO,~~|11.2<br>~~©~~<br>~~J~~||
|PD@TA= 25°C<br>~~OO,~~|Power Dissipation(PCB Mount)**<br>~~OO,~~|2.1<br>~~J~~|W<br>~~J~~|
|PD@TA= 25°C<br>~~OO,~~<br>~~a~~|Power Dissipation(PCB Mount)*<br>~~OO,~~<br>~~a~~|1.0<br>~~J~~<br>~~a~~|W<br>~~J~~<br>~~a~~|
|~~a~~|Linear DeratingFactor(PCB Mount)*<br>~~a~~|8.3<br>~~a~~|mW/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|214<br>~~a~~|mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|2.8<br>~~a~~|A<br>~~a~~|
|EAR<br>~~a~~<br>~~SS~~|Repetitive Avalanche Energy<br>*<br>~~a~~|0.1<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~SS~~|Peak Diode Recoverydv/dt|5.0|V/ns|
|TJ,TSTG<br>~~SS~~<br>~~So~~|Junction and Storage Temperature Range<br>~~So~~|-55  to + 150<br>~~So[-—~~|°C<br>~~[-—~~|



*  When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 

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## IRFL024NPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>ee|**Min.**<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max. **<br>ee<br>~~ee~~|**Units**<br>ee|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|55<br>~~ee ~~<br>~~es~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|0.056 <br>~~es~~<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~<br>~~es~~|––– <br>~~es~~|0.075|Ω|VGS= 10V, ID= 2.8A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~|2.0<br>~~es ~~<br>~~es~~<br>~~es~~|–––<br> ~~es~~<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~|
|gfs|Forward Transconductance<br>~~es~~<br>~~Curent |)~~|3.0<br>~~es~~<br>~~es~~<br>~~|)~~|–––<br>~~es~~<br>~~|)~~|–––<br>~~es~~<br>~~|)~~|S<br>~~es~~<br>~~|)~~|VDS= 25V, ID= 1.68A|
|bs<br>~~Iess~~|[DrdntoSouceteatage<br>~~Curent |)~~<br>~~**e**e~~|–––<br>[DrdntoSouceteatage<br>~~|)~~|–––<br>[DrdntoSouceteatage<br>~~|)~~|25<br>[DrdntoSouceteatage<br>~~|)~~|µA<br>[DrdntoSouceteatage<br>~~|)~~|VDS= 55V, VGS= 0V|
|||–––<br>[DrdntoSouceteatage<br>~~|)~~<br>|–––<br>[DrdntoSouceteatage<br>~~|)~~<br>|250<br>[DrdntoSouceteatage<br>~~|)~~<br>||VDS= 44V, VGS= 0V, TJ= 125°C|
|~~Iess~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~Curent |)~~<br>~~**e**e~~|–––<br>~~|)~~<br>|–––<br>~~|)~~<br>|100<br>~~|)~~<br>|nA<br>~~|)~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~**e**ee~~<br>|–––<br>~~e~~<br>es|–––<br>~~e~~|-100<br>~~e~~||VGS= -20V|
|Qg<br>~~Iess ~~<br>~~es~~|Total Gate Charge<br> ~~**e**e~~<br>~~ee~~<br>|–––<br><br>~~ee~~<br>es|–––<br><br>~~ee~~|18.3<br><br>~~ee~~|nC|ID= 1.68A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 9<br>°|
|Qgs<br>~~esee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>es|–––|3.0|||
|Qgd<br>~~esee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>es|–––|7.7|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|8.1<br>~~ee~~|–––<br>~~ee~~||VDD= 28V<br>ID= 1.68A<br>RG= 24Ω<br>RD= 17Ω, See Fig. 10<br>°<br>~~°~~|
|tr<br>~~ee~~<br>~~a~~<br>a|Rise Time<br>~~ee~~<br>~~es~~<br>|–––<br>~~es~~<br>|13.4<br>~~es~~|–––<br>~~es~~|||
|td(off)<br>a|Turn-Off Delay Time<br>|–––<br>|22.2|–––|||
|tf<br>a~~ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|17.7|–––|||
|Ciss<br>~~ee~~<br>~~Re~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|400|–––<br>~~—~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~°~~|
|Coss<br>~~Re~~<br>~~a~~|Output Capacitance|–––|145|–––<br>~~—~~|||
|Crss<br>~~Re~~<br>~~a~~|Reverse Transfer Capacitance|–––|60|–––<br>~~—~~|||



## **Source-Drain Ratings and Characteristics** 

Ds **Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current MOSFET symbol ~~i ee~~ (Body Diode) Gs A showing  the ISM Pulsed Source Current integral reverse ~~EEF~~ (Body Diode) p-n junction diode. ~~sO~~ VSD Diode Forward Voltage ––– ––– 1.0 ~~2~~ V TJ = 25°C, IS =1.68A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.68A ~~aes~~ Qrr ~~a~~ Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs ~~® Rs~~ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) **Notes:** ® Repetitive rating;  pulse width limited by ©) ISD ≤ 1.68A , di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C @ Starting TJ = 25°C, L =  54.7 mHJ = 25°C, L =  54.7 mH= 25°C, L =  54.7 mH @ Pulse width ≤ 300µs; duty cycle ≤ 2%. 

® Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) @ Starting TJ = 25°C, L =  54.7 mHJ = 25°C, L =  54.7 mH= 25°C, L =  54.7 mH RG = 25Ω, IAS = 2.8A. (See Figure 12) 

www.irf.com 

2 

## IRFL024NPbF 

**==> picture [438 x 475] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100  100<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V PE Eee 7.0V fp<br>6.0V5.5V a | 6.0V5.5V ee<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 10 ee e ll  10 eee || |<br>r o SS e ee<br>|+$— 7A a a<br>gyro Gere 4.5V<br>ye /\ it 4.5V Gy Cl<br> 1 ZA e o n  1 V2<br>o o 7A<br>Pr TATTT i7_{| | | tity fT Thr TUT TT TTT TTT]<br>> | te<br>HHMI te<br>Baa T 20µs PULSE WIDTHT  = 25J IT °C TLE HM 20µs PULSE WIDTHT  = 150J °C<br>0.1 0.1<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics, Fig 2.   Typical Output Characteristics,<br> 100 2.0<br>IDD = 2.8A<br>—— P EELE<br>aa ELLE EELTLT<br>1.5<br>a ee ee ee ee ee a 2a 2a<br>ee ELLE EA<br> 10 ett ey 1.0 DUNNNNNEDS><cQUHTATANL<br>T  = 150  CJ °<br>= = pzatl<br>-——_ OY | 1 LeLert|Lert||<br>TELE<br>0.5<br>T  = 25  CJ ° CELE<br>V      = 25VDS<br>Ap 20µs PULSE WIDTH ELLE VGSGS LL = 10V<br> 1 0.0<br>4.5 5.0 5.5 6.0 6.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJJ (  C)°°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2.0<br>IDD = 2.8A<br>P EELE<br>ELLE EELTLT<br>1.5<br>a 2a 2a<br>ELLE EA<br>1.0 DUNNNNNEDS><cQUHTATANL<br>pzatl<br>LeLert|Lert||<br>TELE<br>0.5<br>CELE<br>ELLE VGSGS LL = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJJ (  C)°°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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## IRFL024NPbF 

**==> picture [442 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
700 20<br>VGS = 0V, f = 1MHz ID = 1.68 A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 44V<br>600 Crss = Cgd VDS = 27V<br>hs Coss = Cds + Cgd<br>=e Ciss 15 ACEH ce<br>500<br>DT P| | | N|<br>PR S Foo Pt | EELAE<br>400 Coss<br>CCT<br>10<br>300 = Se [e] [e] rt J I<br>a | PE LLL |<br>200<br>ee Crss 5 | | WT Tt |<br>CO Soh | | 4<br>100 PPR PSST vet<br>T _ T FOR TEST CIRCUIT dt<br>0 Pre SCeeE 0 Vi ti t.. SEE FIGURE        . 13<br> 1  10  100 0 5 10 15 20<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>a ee ee ee ee eee eee ee || Z CT<br>Pet ft ft ft ft ft tT ft a ea eee neeniten<br> 10  10 100us<br>1ms<br> 1 yoSues 45ennn  1 ESs t 10ms CLI<br>T  = 150  CJ °<br>°<br>T  = 25  CJ  T TCJ = 25  C= 150  C° °<br>0.1 FLa tAAYLY EL V      = 0 V GS 0.1 p  Single Pulse n Oe np<br>0.2 0.4 0.6 0.8 1.0 1.2 0.1  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFL024NPbF 

**==> picture [392 x 467] intentionally omitted <==**

**----- Start of picture text -----**<br>
QG<br>wo Vos<br>10V<br>R QGS QGD<br>+t Ves D.U.T.<br>+<br>— Re L -<br>VG<br>)*40V<br>Pulse Width ≤ 1  ys<br>Charge > Duty Factor ≤ 0.1 %<br>Fig 9a.   Basic Gate Charge Waveform Fig 10a.   Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>| 50KΩ V90%DS fi<br>12V .2µF<br>I .3µF |<br>eeTHeee eee + ' |<br>D.U.T. -VDS 10% \ |<br>VGS VGS |\« le >|TSpl<<br>3mA td(on) tr td(off) tf<br>IG TW ID<br>Current Sampling Resistors<br>Fig 9b.   Gate Charge Test Circuit Fig 10b.   Switching Time Waveforms<br> 1000<br>PRD ee eSSefa<br>ee<br> 100 a ee ell<br>D = 0.50<br>0.20 Ka TC || | oe<br>0.10<br> 10<br>0.05<br>0.02 PDM<br>0.01 t1<br>a e ee eae | ee aa<br> 1 on ec t2<br>SINGLE PULSE<br>(THERMAL RESPONSE) Notes:<br>Gamal ee 1. Duty factor D = t   / t1 2<br>a im see 2. Peak TJ = P DM x  ZthJC + TC<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100  1000<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 10b.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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5 

## IRFL024NPbF 

**==> picture [161 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ai 10V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [163 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>~— tp —><br>/<br>/ \<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
500<br>ID<br>Galan<br>TOP 1.3A<br>2.2A<br>400 KOE BOTTOM 2.8A<br>PN<br>P N<br>300 SENG<br>200<br>XfSOEA} ft<br>100<br>PISA A<br>pf AR A<br>Pt |SS<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

www.irf.com 

6 

## IRFL024NPbF 

## HEXFET PRODUCT MARKING 

THIS IS AN IRFL014 

**==> picture [327 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
PART NUMBER LOT CODE<br>INTERNATIONAL<br>RECTIFIERLOGO -| FL014 a 314P AXXXX<br>‘or<br>Wo _ || DATE CODE A =  ASSEMBLY SITE<br>Cj Cc] Cj (YYWW) CODE<br>YY =  YEAR<br>TOP WW =  WEEK BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


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## IRFL024NPbF 

**==> picture [389 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>- TT<br>OO oO 6)O 6 Oo O<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>Ged) \) Le) Let 1.60 (.062)<br>1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475)<br>11.90 (.469)<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION: MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. / 

**==> picture [329 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.20 (.519) 15.40 (.607)<br>‘ 12.80 (.504) 11.90 (.469) TT<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| Og |<br>LE 18.40 (.724)<br>      MAX.<br>14.40 (.566) IE 4<br>12.40 (.488)<br>3<br>**----- End of picture text -----**<br>


NOTES : 

1.   OUTLINE COMFORMS TO EIA-418-1. 

2.   CONTROLLING DIMENSION: MILLIMETER.. 

3.   DIMENSION MEASURED @ HUB. o 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04 

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8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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