# Power MOSFET, N Channel, 55 V, 1.9 A, 0.16 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2468030RL/)

**URL**: https://novapart.co/products/IRFL014NTRPBF/power-mosfet-n-channel-55-v-19-a-016-ohm-sot-223
**SKU**: IRFL014NTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2320
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.9A |
| Drain Source On State Resistance | 0.16ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468030RL/)

Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFET[®] MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET[®] power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application. 

## IRFL014NPbF HEXFET[®] Power MOSFET 

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**----- Start of picture text -----**<br>
D<br>VDSS = 55V<br>R  = 0.16Ω<br>DS(on)<br>G<br>ID = 1.9A<br>S<br>‘2<br>¢.<br>?<br>¢.<br>SOT-223<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|a<br>~~Re~~|**Parameter**<br>|**Max.**<br>|**Units**|
|---|---|---|---|
|ID@ TA= 25°C<br>~~Re~~|Continuous Drain Current, VGS@ 10V**<br>|2.7<br>||
|ID@ TA= 25°C<br>~~Rea~~|Continuous Drain Current, VGS@ 10V*<br>~~a~~|1.9<br>~~a~~||
|ID@ TA= 70°C<br>~~a~~|Continuous Drain Current, VGS@ 10V*<br>~~a~~|1.5<br>~~a~~||
|IDM<br>~~©~~|Pulsed Drain Current<br>~~©~~|15<br>~~©~~||
|PD@TA= 25°C<br>~~a~~|Power Dissipation(PCB Mount)**<br>~~a~~|2.1<br>~~a~~|W|
|PD@TA= 25°C<br>~~a~~<br>~~a~~|Power Dissipation(PCB Mount)*<br>~~a~~<br>~~o—~~<br>|1.0<br>~~a~~<br>~~o—~~<br>|W<br>|
|~~oo~~<br>~~a~~|Linear DeratingFactor(PCB Mount)*<br>~~oo~~<br>~~o—~~<br>|8.3<br>~~oo~~<br>~~o—~~<br>|mW/°C<br>~~oo~~<br>|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~o—~~<br>|± 20<br>~~o—~~<br>|V<br>|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|48<br>~~a~~|mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|1.7<br>~~a~~|A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>*<br>~~a~~|0.1<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ,TSTG<br>~~a~~|Junction and Storage Temperature Range<br>~~a~~|-55  to + 150<br>~~a~~|°C<br>~~a~~|



*  When mounted on FR-4 board using minimum recommended footprint. 

- ** When mounted on 1 inch square copper board, for comparison with other SMD devices. 

www.irf.com 

1 

06/07/04 

## IRFL014NPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>55<br>–––<br>–––<br>V<br>∆V(BR)DSS/∆TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.054<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>–––<br>0.16<br>Ω<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>gfs<br>Forward Transconductance<br>1.6<br>–––<br>–––<br>S<br>–––<br>–––<br>1.0<br>µA<br>–––<br>–––<br>25<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>nA<br>es<br>~~ee ee ee~~<br>~~a~~<br>~~es~~<br>~~es~~<br>~~a~~<br>~~es~~<br>~~es~~<br>~~a~~<br>~~bs |~~DaintosouceLetageCunent<br>~~| -—7—J—]~~<br>loss~~a~~<br>~~ee~~|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>55<br>–––<br>–––<br>V<br>∆V(BR)DSS/∆TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.054<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>–––<br>0.16<br>Ω<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>gfs<br>Forward Transconductance<br>1.6<br>–––<br>–––<br>S<br>–––<br>–––<br>1.0<br>µA<br>–––<br>–––<br>25<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>nA<br>es<br>~~ee ee ee~~<br>~~a~~<br>~~es~~<br>~~es~~<br>~~a~~<br>~~es~~<br>~~es~~<br>~~a~~<br>~~bs |~~DaintosouceLetageCunent<br>~~| -—7—J—]~~<br>loss~~a~~<br>~~ee~~|**Conditions**<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 1.9A<br>VDS= VGS, ID= 250µA<br>VDS= 25V, ID= 0.85A<br>VDS= 44V, VGS= 0V<br>VDS= 44V, VGS= 0V, TJ= 150°C<br>VGS= 20V<br>VGS= -20V<br>~~@~~|
|---|---|---|
|Qg<br>Total Gate Charge<br>–––<br>7.0<br>11<br>Qgs<br>Gate-to-Source Charge<br>–––<br>1.2<br>1.8<br>nC<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>3.3<br>5.0<br>td(on)<br>Turn-On Delay Time<br>–––<br>6.6<br>–––<br>tr<br>Rise Time<br>–––<br>7.1<br>–––<br>td(off)<br>Turn-Off Delay Time<br>–––<br>12<br>–––<br>tf<br>Fall Time<br>–––<br>3.3<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>190<br>–––<br>Coss<br>Output Capacitance<br>–––<br>72<br>–––<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>33<br>–––<br>~~ee~~<br>es~~fT~~<br>~~Rs~~<br>a ~~es~~<br>ee es<br>es<br>~~Ce~~<br>~~—~~<br>~~es~~<br>~~ee~~||ID= 1.7A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13<br>VDD= 28V<br>ID= 1.7A<br>RG= 6.0Ω<br>RD= 16Ω, See Fig. 10<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~@~~<br>°|



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** Re rs rs rd ed IS Continuous Source Current MOSFET symbol ee (Body Diode) ee A showing  the ISM Pulsed Source Current integral reverse rc (Body Diode) p-n junction diode. ~~a~~ VSD ~~OO~~ Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, IF = 1.7A ~~esa~~ Qrr Reverse RecoveryCharge ––– 64 95 nC di/dt = 100A/µs 

## **Notes:** 

© Repetitive rating;  pulse width limited by © ISD ≤ 1.7A, di/d ≤ 250A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C 

© VDD = 25V, starting TJ = 25°C, L = 8.2mH RG = 25Ω, IAS = 3.4A. (See Figure 12) 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

www.irf.com 

2 

## IRFL014NPbF 

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**----- Start of picture text -----**<br>
100<br>                   VGS<br> TOP           15V<br>                   10V<br>                   8.0V a a |<br>                   7.0V A | |<br>                   6.0V<br>                   5.5V<br>                   5.0V<br> BOTTOM   4.5V ee | all<br>10 Poi AE<br>eeeemeeayff Aaameen eee<br>|ny///j eaGee|<br> syYr |<br>1 YoY7eeeeai= —e<br>Lb ee eee<br>7M ee ee ee ee ee<br> 4.5V<br>(Afo nar oer ||<br> 20µs PULSE WIDTH<br>Pill.Wana  T   = 25°CC<br>0.1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig 1.   Typical Output Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>                   VGS<br> TOP           15V<br>                   10V<br>                   8.0V LOTy<br>                   7.0V                   6.0V 00 TTT]<br>                   5.5V<br>                   5.0V<br> BOTTOM   4.5V THT<br>10 |||$FSeeman)=iPeanced anemeet||EE<br>nygZog<br>ey Ze<br>1 Ae i  4.5V<br>© Ot Se eee eee<br>W VY /@ QO ee ee eee ee eee<br>aVa 7 iii | Titi| fy yyy<br> 20µs PULSE WIDTH<br>0.1 ani.PLU  T   = 150°CJ<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
100 2.0<br>I    = 1.7AD<br>a ee ee es<br>Es==es es es es P EEPA<br>ale OeOa 1.5 VYA<br>10<br>|a ee| neeeee PEA A<br>C—O——--<————— T  = 150°CJ Ps46= eee 1.0 PELE eerAOLW LE<br>i ee ee eee q<br>T  = 25°CJ<br>1 7  Gree A eee eRay at<br>7 © A ee ee es ee es ee ee ee eee 0.5 TELE EL<br>ypff}| | fF{jfffff fy ELE<br> V     = 25VDS<br>0.1 a  20µs PULSE WIDTH A 0.0 PEEP EEE  PE  V      = 10VGS<br>4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


## **Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

3 

## IRFL014NPbF 

**==> picture [207 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
350<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>300 C      = Crss         gd<br>am C      = C     + Coss        ds         gd<br>250 Ciss<br>~ oo<br>N SL<br>Coss ae<br>200<br>Se<br>SST<br>150 Nr<br>PANE<br>100 Crss<br>Sa<br>ET<br>eee |<br>50<br>es<br>0 TIFre Co<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
20<br>I    = 1.7AD<br>V      = 44VDS<br>V      = 28VDS<br>16 pt  V      = 11VDS Sh<br>rT Tf Shy |<br>12 PT | | LAL A<br>Wa We<br>Pt LL COA<br>PP<br>8<br>A<br>a sen<br>4 YYA<br>47 eae<br>vannn<br> FOR TEST CIRCUIT<br>0 (APAETTT     SEE FIGURE 9<br>0 2 4 6 8 10<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

## **Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

**==> picture [433 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>a ee ee ee eee ee LET<br>10 aes—— 10 CEE7 SIT =k N  ET<br>T  = 150°CJ 100µs<br>n ny  Ay T  = 25°CJ 4c eee eee<br>1ms<br>1 an ya ) 1 CPS P<br>}— FF J eeeee e 10ms<br>T     = 25°CA<br>T     = 150°CJ<br>0.1 APf | ep ft V      = 0VGS | A 0.1 p  Single Pulse e lEE<br>0.4 0.6 0.8 1.0 1.2 1.4 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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## IRFL014NPbF 

**==> picture [87 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
QG<br>o O<br>QGS QGD<br>a<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
+<br>-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 9a.** Basic Gate Charge Waveform 

**==> picture [141 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>| 50KΩ<br>td 12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG pW ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 9b.** Gate Charge Test Circuit 

**Fig 10a.** Switching Time Test Circuit 

**==> picture [137 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
V90%DS xf\<br>10% /\<br>VGS |\« le >|\ Py<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
1000<br>oe<br>100 ET<br>D = 0.50<br>0.20<br>a meme Ee<br>0.10<br>10 ee eee ema oo<br>0.05<br>PDM<br>0.02<br>ce 0.01 sr ee a t1<br>1 a e t2<br>Notes:<br>      SINGLE PULSE 1. Duty factor D =  t   / t 1 2<br>(THERMAL RESPONSE)<br>0.1 meninanallEnniaad ian 2. Peak T  = P      x Z         + TJ DM thJA A A<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t   , Rectangular Pulse Duration (sec)1<br>thJA<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

5 

## IRFL014NPbF 

**==> picture [158 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>gy 20V<br>at tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [163 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>~— tp —><br>‘|<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
120<br>                    I D<br>Po ft | TOP            1.5A<br>Gata                    2.7A<br>100 ee BOTTOM    3.4A<br>80 PN TE<br>PONE |pp<br>PK<br>60<br>ROINCL LL<br>40 NNENEEP NWR Ee<br>20 Pt |USAR<br>0  V      = 25V ee DD ee<br>25 50 75 100 125 150<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

www.irf.com 

6 

## IRFL014NPbF 

## HEXFET PRODUCT MARKING 

THIS IS AN IRFL014 

**==> picture [314 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
PART NUMBER LOT CODE<br>INTERNATIONAL<br>RECTIFIER A FL014 AXXXX<br>LOGO 314P<br>‘ron<br>iim DATE CODE A =  ASSEMBLY SITE<br>= = C4 (YYWW) CODE<br>YY =  YEAR<br>WW =  WEEK<br>TOP BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


www.irf.com 

7 

## IRFL014NPbF 

**==> picture [343 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>"| a<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>Ve in 1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475) co<br>11.90 (.469)<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION: MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. / 

**==> picture [327 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.20 (.519) 15.40 (.607)<br>’ 12.80 (.504) 11.90 (.469) ee<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| OO |<br>NOTES : | EL 18.40 (.724)<br>      MAX.<br>1.   OUTLINE COMFORMS TO EIA-418-1.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) I 4<br>3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


3.   DIMENSION MEASURED @ HUB. G 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

www.irf.com 

8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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