# Power MOSFET, N Channel, 55 V, 14 A, 0.07 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:3155137/)

**URL**: https://novapart.co/products/IRFIZ24NPBF/power-mosfet-n-channel-55-v-14-a-007-ohm-to-220fp
**SKU**: IRFIZ24NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6100
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 29W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155137/)

PD - 94808 

## IRFIZ24NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.  The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.  This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.  The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. 

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D<br>VDSS = 55V<br>R  = 0.07Ω<br>DS(on)<br>G<br>ID = 14A<br>S<br>TO-220 FULLPAK<br>**----- End of picture text -----**<br>


|or<br>~~a~~|**Parameter**<br>or<br>~~._/~~<br>|**Max.**<br>or<br>~~_“"VWw”’-..~~<br>~~oT~~|**Max.**<br>or<br>~~_“"VWw”’-..~~<br>~~oT~~|**Units**<br>or<br>~~oT~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~._/~~<br>|14<br>~~_“"VWw”’-..~~<br>~~oT~~||A<br>~~oT~~|
|ID@ TC= 100°C<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~|10|||
|IDM<br>oir|Pulsed Drain Current<br>oir|68|||
|PD@TC= 25°C<br>~~o>~~|Power Dissipation<br>~~o>~~|29<br>~~o>~~||W<br>~~o>~~|
|~~o>~~<br>~~OO~~|Linear DeratingFactor<br>~~o>~~<br>~~OO~~<br>~~>~~|0.19<br>~~o>~~||W/°C<br>~~o>~~|
|VGS<br>~~OO~~|Gate-to-Source Voltage<br>~~OO~~<br>~~>~~|± 20||V|
|EAS<br>~~OO~~<br>~~a~~|Single Pulse Avalanche Energy<br>~~OO~~<br>~~>~~<br>~~a~~|71<br>~~a~~||mJ<br>~~a~~|
|IAR<br>~~a~~<br>~~eS~~|Avalanche Current<br>~~a~~<br>~~©~~|10<br>~~a~~||A<br>~~a~~|
|EAR<br>~~a~~<br>~~eS~~|Repetitive Avalanche Energy<br>~~a~~<br>~~©~~|2.9<br>~~a~~||mJ<br>~~a~~|
|dv/dt<br>~~eS~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~©~~<br>~~pf~~|5.0||V/ns|
|TJ<br>TSTG<br>~~eS~~<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~©~~<br>~~pf~~|-55  to + 175||°C|
|~~pf~~<br>———-77N79@#9————J<br>~~eg~~|SolderingTemperature, for 10 seconds<br>~~pf~~<br>———-77N79@#9————J|300(1.6mm from case)|||
|~~pf~~<br>~~eg~~|Mounting torque, 6-32 or M3 screw<br>~~pf~~|10 lbf•in (1.1N•m)|||
|**Thermal Resistance**<br>~~eg~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|5.2|°C/W|
|RθJA|Junction-to-Ambient|–––|65||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC<br>RθJA|Junction-to-Case<br>Junction-to-Ambient|–––<br>–––|5.2<br>65|°C/W|



11/3/03 

## IRFIZ24NPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**|**Min.**|**Typ. **<br>~~GO~~|**Max.**<br>~~GO~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Dn~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~Dn~~<br>~~rs~~|55<br>~~Dn~~<br>~~rs~~|–––<br>~~Dn~~<br>~~GO~~<br>~~es~~|–––<br>~~Dn~~<br>~~GO~~<br>~~es~~|V<br>~~Dn~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~Dn~~|
|∆V(BR)DSS/∆TJ<br>~~a~~<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~rs~~|–––<br>~~rs~~|0.052 <br>~~GO~~<br>~~es~~|–––<br>~~GO~~<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~©~~|
|RDS(on)<br>~~es~~<br>~~a~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~rs~~<br>~~es~~<br>~~rs~~|–––<br>~~rs ~~<br>~~es~~<br>~~rs~~|–––<br> ~~es~~<br>~~es~~<br>~~ss~~|0.07<br>~~es~~<br>~~es~~<br>~~ss~~|Ω<br>~~es~~<br>~~es~~<br>~~ss~~|VGS= 10V, ID= 7.8A<br>~~es~~<br>~~©~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~rs~~|2.0<br>~~rs~~|–––<br>~~ss~~|4.0<br>~~ss~~|V<br>~~ss~~|VDS= VGS, ID= 250µA<br>~~©~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~rs~~<br>~~DG~~|4.5<br>~~rs~~<br>~~DG~~|–––<br>~~ss~~<br>~~GO~~|–––<br>~~ss~~<br>~~GO~~|S<br>~~ss~~<br>~~GO~~|VDS= 25V, ID= 10A<br>~~©~~|
|IDSS<br>~~a~~<br>~~—~~|Drain-to-Source Leakage Current<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|25<br>~~a~~|µA<br>~~a~~<br>~~a~~|VDS= 55V, VGS= 0V<br>~~a~~|
|||–––<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|250<br>~~a~~<br>~~a~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~a~~|
|IGSS<br>~~—~~<br>~~a~~|Gate-to-Source Forward Leakage<br>|–––<br>~~a~~<br>|–––<br>~~a~~<br>~~GO~~<br>|100<br>~~a~~<br>~~GO~~<br>|nA<br>~~a~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~Ds~~<br>|–––<br>~~a~~<br>~~Ds~~<br>|–––<br>~~a~~<br>~~Ds~~<br>~~GO~~<br>|-100<br>~~a~~<br>~~Ds~~<br>~~GO~~<br>||VGS= -20V|
|Qg<br>~~—~~<br>~~a~~|Total Gate Charge<br>|–––<br>~~a~~<br>|–––<br>~~a~~<br>~~GO~~<br>|20<br>~~a~~<br>~~GO~~<br>|nC<br>~~a~~|ID= 10A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13<br>~~©~~|
|Qgs<br>~~aee~~<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~|5.3<br>~~GO~~<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~Re~~|Gate-to-Drain("Miller")Charge|–––|–––|7.6|||
|td(on)<br>~~ee~~<br>~~Re~~<br>ee|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~<br>ee|4.9<br>~~es~~<br>ee|–––<br>~~es~~|ns|VDD= 28V<br>ID= 10A<br>RG= 24Ω<br>RD= 2.6Ω,See Fig. 10<br>~~©~~|
|tr<br>~~Re~~<br>ee|Rise Time<br>~~es~~|–––<br>~~es~~<br>ee|34<br>~~es~~<br>ee|–––<br>~~es~~|||
|td(off)<br>ee|Turn-Off Delay Time<br>~~es~~|–––<br>~~es~~<br>ee|19<br>~~es~~<br> ee|–––<br>~~es~~|||
|tf|Fall Time|–––|27|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS<br>~~es~~|Internal Source Inductance<br>~~es~~|–––<br>~~es~~|7.5<br>~~es~~|–––<br>~~es~~|nH||
|Ciss<br>~~es~~|Input Capacitance<br>~~es~~|–––<br>~~es~~|370<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>®|
|Coss<br>~~es~~<br>a|Output Capacitance<br>~~es~~|–––<br>~~es~~|140<br>~~es~~|–––<br>~~es~~|||
|Crss<br>a|Reverse Transfer Capacitance|–––|65|–––|||
|C|Drain to Sink Capacitance|–––|12|–––||ƒ = 1.0MHz|



## **Source-Drain Ratings and Characteristics** 

|~~>~~|**Parameter**<br>~~>~~|**Min.**|**Typ. **|**Max.**|**Units**<br>~~|~~|**Conditions**<br>~~|~~<br>~~GS~~|
|---|---|---|---|---|---|---|
|IS<br>~~fe~~<br>~~>~~|Continuous Source Current<br>(Body Diode)<br>~~fe~~<br>~~>~~|–––<br>~~fe~~|–––<br>~~fe~~|14<br>~~fe~~|A<br>~~|~~<br>~~ee~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~|~~<br>~~GS~~<br>~~ee~~|
|ISM<br>~~>~~<br>~~es~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~>~~<br>~~ee~~|–––<br>~~ee~~<br>~~ns~~|–––<br>~~ee~~<br>~~ns~~|68<br>~~ee~~|||
|VSD<br>~~>~~<br>~~es~~<br>~~a~~|Diode Forward Voltage<br>~~>~~<br>~~ee~~|–––<br>~~ee~~<br>~~ns~~|–––<br>~~ee~~<br>~~ns~~|1.3<br>~~ee~~|V<br>~~|~~<br>~~ee~~|TJ= 25°C, IS= 7.8A, VGS= 0V<br>~~|~~<br>~~GS~~<br>~~ee~~|
|trr<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~<br>~~ns~~|56<br>~~ee~~<br>~~ns~~|83<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C, IF= 10A<br>di/dt = 100A/µs<br>~~ee~~<br>co)|
|Qrr<br>a<br>~~es~~|Reverse RecoveryCharge|–––|120|180|µC||
|ton<br>~~es~~|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|||||



## **Notes:** 

©@ Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) 

© VDD = 25V, starting TJ = 25°C, L = 1.0mH © RG = 25Ω, IAS = 10A. (See Figure 12) 

t=60s,  ƒ=60Hz 

Uses IRFZ24N data and test conditions 

© ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

## IRFIZ24NPbF 

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100 100<br>                   VGS a                    VGS a<br> TOP           15V  TOP           15V<br>                   10V ot ra                    10V tt<br>                   8.0V                    8.0V<br>                   7.0V Ot Pose, ll!                    7.0V 0 eeel<br>                   6.0V                    6.0V<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>| Hb ATea eeOT esse<br>WELT IT | 6 |<br>10 +Gn)— + ff /Zas0Yf-f pon etIll 10 |PEA foobe| ll<br>e/a OU<br>ee eee eee EM) C2 eee<br>4.5V<br>e/a ee ell — — m e<br>P// ZA tt 7 ean<br> 4.5V<br>UY +—- a | fy| |<br> 20µs PULSE WIDTH   20µs PULSE WIDTH<br>Yeyf |  T   = 25°CTCJ V ( A  T   = 175°CTCJ<br>1 A 1<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100 3.0<br>FTA  I    = 17AD<br>2.5<br>p T  = 25°CJ s P CP<br>re ——<br>T  = 175°CJ 2.0<br>10 |PFeeetTAAT|>saeen Td | 1.5 BREE P EEE EEER ESOS EREREEERED apA24<br>Paes<br>1.0<br>ee0 Ae ee ceee ta ce ennaaEp>>Let<a00eaanun 0000 EERE CA<br>Vi} ty py 0.5 Tt<br> V     = 25VDS<br>1 ft | foc  20µs PULSE WIDTH  A 0.0 PE PEELE EEE EE EEE  V      = 10V GS<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

## IRFIZ24NPbF 

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**----- Start of picture text -----**<br>
700 20<br>V      = 0V,         f = 1MHzGSGS I    = 10AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         dsiss         gs         gd         ds  V      = 44VDS<br>600 C      = Crss         gdrss         gd  V      = 28VDS<br>—H C      = oss        ds         gdC     + C      = oss        ds         gdC     + Coss        ds         gdC     + CC     + C     + CC 16 4 H SEA<br>7 Ff SKI I<br>500 C ississ<br>P= P| fo) Tt | Tl RY<br>400 N C ossoss ON 12 Pyfg<br>ae JA<br>300 eeTTTT PETTL LA<br>8<br>eee Py | Uh<br>200 C rssrss<br>SnCOSaCOS 4 To | fy<br>aCOS o | za<br>100<br>ee vanunn<br> FOR TEST CIRCUIT<br>0 reeo A 0 7AnnAEETT     SEE FIGURE 13<br>1 10 100 0 4 8 12 16 20<br>V     , Drain-to-Source Voltage (V)DSDS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>rT DL DAT TT ae ee<br>T  = 175°CJ<br>100<br>oA ) Le<br>T  = 25°CJ<br>10µs<br>10 Ree 2 oe S E PetaSa CaeSe ee<br>on 1 oc 10 PS S 100µs<br>onan Ps t<br> T     = 25°CC 1ms<br> T     = 175°CJ<br>1 PTAALAVEETEL EE V      = 0V GS A 1 Reims  Single Pulse TE TS ) ki 10ms<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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700<br>V      = 0V,         f = 1MHzGSGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         dsiss         gs         gd         ds<br>600 C      = Crss         gdrss         gd<br>—H C      = oss        ds         gdC     + C      = oss        ds         gdC     + Coss        ds         gdC     + CC     + C     + CC<br>7<br>500 C ississ<br>P=<br>N ON<br>400 C ossoss<br>ae<br>300 eeTTTT<br>eee<br>200 C rssrss<br>SnCOSaCOS o<br>100<br>0 eoreeo ee<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

## IRFIZ24NPbF 

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**----- Start of picture text -----**<br>
15 SCRREARREEEE<br>10 PPA EEE<br>ne<br>PN<br>PEELLLLEENiNiN AU<br>5 UN\\<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureCC (  C)°<br>EE Maximum Drain Current Vs. |<br>I   , Drain Current (A)DD<br>**----- End of picture text -----**<br>


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15 RD<br>VDS<br>VGS<br>D.U.T.<br>SCRREARREEEE<br>RG<br>+<br>10 PPA EEE | - [V] DD<br>ne 10V<br>PN :<br>Pulse Width ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>PEELLLLEENiNiN AU<br>5<br>UN\\ Fig 10a. VDS   Switching Time Test Circuit<br>90%<br>0 |<br>25 50 75 100 125 150 175<br>° |<br>T   , Case TemperatureCC (  C)° |<br>10%<br>VGS |<br>Fig 9.   EE Maximum Drain Current Vs. | AYN\« >< >! <p<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 10<br>D = 0.50<br>a<br>| | | | ___ —— an"<br>0.20<br> 1 |<br>0.10<br>= SSS eee<br>0.05<br>een eS a<br>0.02<br>0.01 SINGLE PULSE PDM<br>0.1 =ee S e (THERMAL RESPONSE) e<br>t1<br>E o t2<br>PT EETT 1. Duty factor D =Notes: t   / t1 2<br>eell 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)DD<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## IRFIZ24NPbF 

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L<br>VDS<br>D.U.T.<br>RG +<br>_— - VDD<br>aa 5.0 V l n IAS<br>tp 0.01Ω<br>| 1.<br>Lae<br>°<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [158 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>— tp —<br>/ VDD<br>/<br>VDS /<br>:<br>fy<br>IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
140<br>                    I D<br>NRE<br>TOP            4.2A<br>120 AN ee ee ee                    7.2A<br>PX BOTTOM    10A<br>a<br>100 tL ft<br>NEE eee<br>80 REIN PE EE<br>PRENOL OL<br>60 NaN NESS<br>ENNIS<br>40 PY IRN<br>Pt tT ARAN<br>20 Pot dE NAANEL<br>aa See<br>0  V      = 25V eee DD ee ee  ee<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>|<br>50KΩ<br>12V .2µF<br>QG t] Aes .3µF<br>10 V +<br>D.U.T. -VDS<br>QGS QGD<br>VGS<br>VG 3mA<br>oo, (a4 |<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

## IRFIZ24NPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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**----- Start of picture text -----**<br>
+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(aa)       Current Transformer<br>| | -<br>+<br>- - +<br>wh<br>00)<br>RG •  dv/dt controlled by RG +<br>l s •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— + _<br>t<br>VGS=10V *<br>t<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt J<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>Fig 14.  For N-Channel HEXFETS<br>**----- End of picture text -----**<br>


## IRFIZ24NPbF 

## TO-220 Full-Pak Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-220 Full-Pak Part Marking Information 

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EXAM PLE: THIS IS AN IRFI840G<br>WITH ASSEMBLY  PART NUM BER<br>LO T CODE 3432 INTERNATIONAL<br>ASSEM BLED ON WW 24 1999 RECTIFIER IRFI840G<br>IN THE ASSEM BLY LINE "K" LOGO 924K<br>Note: position indicates "Lead-Free"  "P" in assembly line ASSEM BLY  34         32 DATE CODEYEAR 9 =  1999<br>LOT CODE WEEK 24<br>LINE K<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/03 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFIZ24NPBF/power-mosfet-n-channel-55-v-14-a-007-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfiz24npbf/mosfet-n-ch-55v-14a-175deg-c-29w/dp/3155137)
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