# Power MOSFET, N Channel, 100 V, 11 A, 0.11 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:9102469/)

**URL**: https://novapart.co/products/IRFI530NPBF/power-mosfet-n-channel-100-v-11-a-011-ohm-to-220fp
**SKU**: IRFI530NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9400
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 33W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.11ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9102469/)

IRFI530NPbF ~~—~~ 

## ~~Cinfineon~~ 

HEXFET[® ] Power MOSFET **VDSS 100V RDS(on) 0.11**  **ID 12A** S D G TO-220 Full-Pak **G D S** Gate Drain Source ~~—~~ 

- Advanced Process Technology 

- Isolated Package 

- High Voltage Isolation = 2.5KVRMS  

- Sink to Lead Creepage Dist. = 4.8mm 

- Fully Avalanche Rated 

- Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

|**G**<br>**D**<br>**S**<br>~~—~~|**G**<br>**D**<br>**S**<br>~~—~~|~~—~~|
|---|---|---|
|The TO-220 Full Pak eliminates the need for additional insulating<br>hardware in commercial-industrial applications. The molding<br>Gate<br>Drain<br>Source<br>~~—~~||~~—~~|
|compound used provides a high isolation capability and a low|||
|thermal resistance between the tab and external heat sink. This|||
|isolation is equivalent to using a 100 micron mica barrier with|||
|standard TO-220 product.  The Fullpak is mounted to a heat sink|||
|using a single clip or by a single screw fixing.|||
|**Base Part Number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRFI530NPbF<br>TO-220 Full-Pak<br>Tube<br>50<br>IRFI530NPbF<br>~~———————— ee~~|||
|**Absolute Maximum Ratings **|||
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>12<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>8.6<br>IDM<br>Pulsed Drain Current<br>60<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>41<br>W<br>~~————~~<br>~~ae~~|||
|Linear Derating Factor<br>0.27|W/°C||
|VGS<br>Gate-to-Source Voltage<br>± 20|V||
|EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>150<br>mJ<br>IAR<br>Avalanche Current<br>9.0<br>A<br>EAR<br>Repetitive Avalanche Energy <br>4.1<br>mJ<br>dv/dt<br>Peak Diode Recoverydv/dt<br>5.0<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>Mountingtorque,6-32 or M3 screw<br>10 lbf•in(1.1N•m)<br> <br>~~ee~~|||
|**Thermal Resistance**|||
|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>3.7<br>RJA<br>Junction-to-Ambient<br>–––<br>65<br>°C/W<br>~~Ssee~~|||
|1<br>2017-04-27<br>~~———~~|||



~~Cinfin eon~~ 

IRFI530NPbF ~~LLL~~ 

|~~PP~~<br>~~es~~|**Parameter**<br>~~PP~~<br>~~I~~|**Min.**<br>~~I~~|**Typ. Max. Units**<br>~~QD~~|**. Max. Units**<br>~~QD~~|**. Max. Units**<br>~~QO (~~|**. Max. Units**<br>**Conditions**<br>~~(~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~PP~~<br>~~es~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~PP~~<br>~~I~~<br>~~tI~~|100<br>~~I~~<br>~~tI~~|–––<br>~~QD~~<br>~~tt) I~~|–––<br>~~QD~~<br>~~I~~|V<br>~~QO (~~|VGS =0V, ID =250µA<br>~~(~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~es~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~I ~~<br>~~tI~~|–––<br> ~~I~~<br>~~tI~~|0.12<br>~~QD~~<br>~~tt) I~~|–––<br>~~QD ~~<br>~~I~~|V/°C Reference to 25°C<br> ~~QO (~~|V/°C Reference to 25°C,ID= 1mA<br>~~(~~|
|RDS(on) <br>~~ee~~<br>~~PF~~<br>~~Pe~~|Static Drain-to-Source On-Resistance<br>~~tI~~<br>~~Pe~~|–––<br>~~tI ~~<br>~~ee~~|–––<br> ~~tt) I~~<br>~~ee~~|0.11<br>~~I~~<br>~~ee~~|<br>~~ee~~|VGS= 10V,ID= 6.6A<br>~~ee~~<br>~~ee~~|
|VGS(th)<br>~~PF~~<br>~~Pe~~|Gate Threshold Voltage<br>~~Pe~~|2.0<br>~~ee~~|–––<br>~~ee~~|4.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~<br>~~ee~~|
|gfs<br>~~PF~~<br>~~Pe~~|Forward Trans conductance<br>~~Pe~~|6.4<br>~~ee ~~|–––<br> ~~ee ~~|–––<br> ~~ee ~~|S<br> ~~ee~~|VDS =50V, ID =9.0A<br>~~ee~~<br>~~ee~~|
|IDSS<br>~~Pe~~|Drain-to-Source Leakage Current<br>~~Pe~~|–––|–––|25|µA<br>~~ee~~|VDS =100V, VGS =0V<br>~~Po~~|
|||–––<br>~~a~~|–––<br>~~ee~~|250<br>~~ee~~||VDS =80V,VGS =0V,TJ =150°C<br>~~Po~~<br>~~Po~~|
|IGSS<br>~~Pe~~<br>~~FO~~<br>~~**ee**~~|Gate-to-Source Forward Leakage<br>~~Pe~~<br>~~FO~~|–––<br>~~a~~<br>~~FO~~|–––<br>~~ee~~<br>~~FO~~|100<br>~~ee~~<br>~~FO~~|nA<br>~~ee~~<br>~~FO~~<br>~~Pf~~|VGS =20V<br>~~Po~~<br>~~FO~~|
||Gate-to-Source Reverse Leakage<br>~~Pe~~<br>~~FO~~|–––<br>~~a~~<br>~~FO~~|–––<br>~~ee ~~<br>~~FO~~|-100<br> ~~ee~~<br>~~FO~~||VGS = -20V<br>~~Po~~<br>~~FO~~<br>~~Pf~~|
|Qg<br>~~**ee**~~|Total Gate Charge|–––|–––|44|nC<br>~~Pf~~|ID= 9.0A<br>VDS= 80V<br>VGS= 10V, SeeFig.6 and13<br>~~Pf~~|
|g<br>Qgs<br>~~**ee**~~|Gate-to-Source Charge|–––|–––|6.2|||
|Qgd<br>~~**ee**~~<br>~~ee~~|Gate-to-Drain Charge|–––|–––|21|||
|gd<br>td(on)<br>~~ee~~|Turn-On Delay Time|–––|6.4|–––|ns<br>|VDD= 50V<br>ID= 9.0A<br>RG= 12<br>RD=5.5See Fig. 10|
|d(on)<br>tr<br>~~ee~~|Rise Time|–––|27|–––|||
|td(off)|Turn-Off DelayTime|–––|37|–––|||
|d(off)<br>tf<br>~~a~~|Fall Time<br>|–––<br>|25<br>|–––<br>|||
|LD<br>~~jf)~~|Internal Drain Inductance<br>~~jf)~~|–––<br>~~jf)~~|4.5<br>~~jf)~~|–––<br>~~jf)~~|nH<br>~~jf)~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>&|
|LS<br>~~jf)~~<br>~~a~~|Internal Source Inductance<br>~~jf)~~|–––<br>~~jf)~~|7.5<br>~~jf)~~|–––<br>~~jf)~~|||
|Ciss<br>~~a~~|Input Capacitance|–––|640|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~Pe~~|
|Coss<br>~~a~~<br>~~a~~|OutputCapacitance|–––|160|–––|||
|Crss<br>~~a~~<br>~~a~~|ReverseTransferCapacitance|–––|88|–––|||
|C<br>~~a~~<br>~~a~~|Drain to SinkCapacitance|–––|12|–––||ƒ= 1.0MHz<br>~~Pe~~|
|**Source-Drain Ratings and Characteristics**<br>~~a~~<br>~~Pe~~<br>~~ee~~<br>~~II(ID(OD(OO~~|||||||
|~~ee~~<br>~~+++,~~|**Parameter **<br>~~I~~<br>~~+++,~~|**Min.**<br>~~I~~<br>~~+++,~~|**Typ. M**<br>~~(ID~~<br>~~+++,~~|**. Max.**<br>~~(OD~~<br>~~+++,~~|**Units**<br>~~(OO~~<br>~~+++,~~<br>~~]~~|**Conditions**<br>~~&~~|
|IS<br>~~ee~~<br>~~+++,~~|Continuous Source Current<br>(Body Diode)<br>~~I ~~<br>~~+++,~~|–––<br> ~~I ~~<br>~~+++,~~|–––<br> ~~(ID~~<br>~~+++,~~|12<br>~~(OD ~~<br>~~+++,~~|A<br> ~~(OO~~<br>~~+++,~~<br>~~]~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~&~~<br>~~=~~|
|ISM<br>~~+++,~~<br>~~a~~<br>~~ee~~|Pulsed Source Current<br>(Body Diode)<br>~~+++,~~<br>~~a~~<br>~~ry~~|–––<br>~~+++,~~<br>~~ts~~|–––<br>~~+++,~~<br>~~Is~~|60<br>~~+++,~~<br>~~OU~~|||
|VSD<br>~~+++,~~<br>~~a ~~<br>~~ee~~<br>~~pf~~|Diode Forward Voltage<br>~~+++,~~<br> ~~a~~<br>~~ry~~<br>~~pf~~|–––<br>~~+++,~~<br>~~ts~~|–––<br>~~+++,~~<br>~~Is~~|1.3<br>~~+++,~~<br>~~OU~~|V<br>~~+++,~~<br>~~]~~|TJ= 25°C,IS= 6.6A,VGS= 0V<br>~~&~~<br>~~=~~|
|trr<br>~~ee~~<br>~~pf~~<br>~~ee~~|Reverse Recovery Time<br>~~ry ~~<br>~~pf~~<br>~~nS~~|–––<br> ~~ts ~~<br>~~nS~~<br>~~I~~|130<br> ~~Is ~~<br>~~nS~~|190<br> ~~OU~~<br>~~nS~~|ns  T<br>~~nS~~|ns  TJ= 25°C ,IF= 9.0A<br>nC   di/dt = 100A/µs|
|Qrr<br>~~pf~~<br>~~ee~~|Reverse RecoveryCharge<br>~~pf~~<br>~~nS~~|–––<br>~~nS~~<br>~~I~~|650<br>~~nS~~|970<br>~~nS~~|nC   di/dt = 100A/<br>~~nS~~||



**Notes:** 

 Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

 starting  TJ = 25°C, L = 3.1mH, RG = 25, IAS = 9.0A  (See fig. 12) 

-  ISD 9.0A, di/dt 520A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

-  t=60s,  ƒ=60Hz 

-  Uses IRF530N data and test conditions. 

2 

2017-04-27 

IRFI530NPbF 

**==> picture [533 x 644] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>                   VGS                    VGS<br> TOP           15V  TOP           15V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   7.0V                    7.0V<br>                   6.0V                    6.0V<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>10 10<br>4.5V<br> 4.5V<br> 20µs PULSE WIDTH   20µs PULSE WIDTH<br>anal  T   = 25°CJ  T   = 175°CJ<br>1 A 1<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>3.0<br>100  I    = 15AD<br>2.5<br>T  = 25J ° C Ta mn<br>2.0<br>eC T  = 175 J °C<br>1.5<br>10 Ae<br>1.0<br>7 || e ee<br>0.5 T<br>/  V     = 50VDS T ATECE  V      = 10V GS<br> 20µs PULSE WIDTH  0.0<br>1 A -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>4 5 6 7 8 9 10 T   , Junction Temperature (°C)J<br>V     , Gate-to-Source Voltage (V)GS<br>Fig. 3  Typical Transfer Characteristics Fig. 4  Normalized On-Resistance<br>vs. Temperature<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D DS(on)<br>I   , Drain-to-Source Current (A)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


3 2017-04-27 ~~—_——____—~~ 

2017-04-27 

IRFI530NPbF ~~a~~ 

## ~~Cafineon~~ 

**==> picture [533 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200 20<br>V      = 0V,         f = 1MHzGS I    = 9.0AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds  V      = 80VDS<br>1000 C      = CC      = C     + Crss         gdoss        ds         gd 16  V      = 50V V      = 20VDSDS<br>a ee<br>C  iss<br>800<br>PS  SSE 12 TTT) | LA<br>——_ a<br>600<br>C  oss<br>8<br>400 SS yet<br>C rss<br>4<br>200 eR HA] |<br> FOR TEST CIRCUIT<br>    SEE FIGURE 13<br>0 A 0<br>1 See liiimmastith 10 100 0 ALi 5 10  fifth 15 20 25 30 35 40 45<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**==> picture [234 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>T  = 175°CJ<br>10 aT)<br>T  = 25°CJ<br>V      = 0V GS<br>1<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**==> picture [246 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY R DS(on)<br>100<br>Le 10µs<br>10 100µs<br> T     = 25°CC 1ms<br> T     = 175°C J<br>1  Single Pulse \\! 10ms<br>1 10 100 1000<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area Forward Voltage 4 2017-04-27 ~~=——TTTSTN >~~ 

~~Cinfineon~~ 

IRFI530NPbF ~~LLL~~ 

**==> picture [207 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
8.0 SO<br>6.0<br>PASSE<br>4.0 PLE ELLEN<br>EEN<br>2.0 PLLtiti I<br>0.0 PLT  TTT TN<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC EEE LL EEL (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**==> picture [436 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
 10<br>D = 0.50<br> 1<br>0.20<br>iiceSesh eae i hy Ssiep e tsueet millS e th<br>0.10<br>0.05<br>0.02 PDM<br>a<br>0.1 0.01 SINGLE PULSE t1<br>(THERMAL RESPONSE)<br>t2<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>fae 2. Peak T J = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

2017-04-27 

5 

~~Cinfineon~~ 

IRFI530NPbF ~~LLL~~ 

**==> picture [513 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
350<br>                    I D<br>TOP            3.7A<br>300                    6.4A<br>15V BOTTOM    9.0A<br>250<br>L DRIVER<br>VDS<br>200<br>RG D.U.T + 150 KNEE<br>An - [V][DD] :<br>IAS A<br>20V<br>tp 0.01 100<br>l 5y ANNPt |<br>50 |SSSAL<br>Fig 12a.   Unclamped Inductive Test Circuit<br> V      = 25VDD<br>0<br>p' | [FSS]<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**==> picture [138 x 32] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**==> picture [22 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

6 

2017-04-27 

~~Cinfineon~~ 

IRFI530NPbF 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

2017-04-27 

7 

~~Cinfineon~~ 

IRFI530NPbF 

**TO-220 Full-Pak Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220 Full-Pak Part Marking Information** 

TO-220AB  Full-Pak packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

8 

2017-04-27 

## IRFI530NPbF ~~Cinfineon LLL~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] **Moisture Sensitivity Level** TO-220 Full-Pak N/A **RoHS Compliant** Yes ~~—————~~ † Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Changed datasheet with Infineon logo - all pages.|
|04/27/2017||Corrected Package Outline on page 8.|
|||Added disclaimer on lastpage.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

9 

2017-04-27 



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