# Power MOSFET, N Channel, 150 V, 34 A, 0.016 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2580016/)

**URL**: https://novapart.co/products/IRFI4321PBF/power-mosfet-n-channel-150-v-34-a-0016-ohm-to
**SKU**: IRFI4321PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2100
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 2 - 1 year |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 46W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.016ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580016/)

IRFI4321PbF 

HEXFET[® ] Power MOSFET 

## **Applications** 

**VDSS 150V RDS(on)   typ. 12.2m**  **RDS(on)   max. 16m**  **ID 34A** E ~~l==~~ S D G TO-220 Full-Pak **G D S** Gate Drain Source ~~eeee~~ 

- Motion Control Applications 

- High Efficiency Synchronous Rectification in SMPS 

- Uninterruptible Power Supply 

- Hard Switched and High Frequency Circuits 

## **Benefits** 

- Low RDSON Reduces Losses 

- Low Gate Charge Improves the Switching Performance 

- Improved  Diode Recovery Improves Switching & EMI Performance 

- 30V Gate Voltage Rating Improves Robustness 

- Fully Characterized Avalanche SOA 

**Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity** IRFI4321PbF TO-220 Full-Pak Tube 50 IRFI4321PbF ~~Ss~~ 

|**Absolute Maximum Ratings **|**Absolute Maximum Ratings **|**Absolute Maximum Ratings **|**Absolute Maximum Ratings **|
|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**|**Units**|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|34|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|21||
|IDM|Pulsed Drain Current|140||
|PD@TC= 25°C|Maximum Power Dissipation|46|W|
||Linear Derating Factor|0.37|W/°C|
|VGS|Gate-to-Source Voltage|± 30|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited) |170|mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|
||SolderingTemperature,for 10 seconds(1.6mm from case)|300||
||Mountingtorque,6-32 or M3 screw|10 lbf•in(1.1N•m)<br>||



**Thermal Resistance** 

|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>2.73<br>RJA<br>Junction-to-Ambient(PCB Mount)<br>–––<br>65<br>°C/W<br>~~ee~~|
|---|
|1<br>2017-04-27<br>~~=e~~|



~~Cinfineon~~ 

IRFI4321PbF ~~LLL~~ 

|**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|
|---|
|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-SourceBreakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS=0V,ID= 250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>190<br>–––<br>mV/°C Reference to 25°C,ID= 1mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>12.2<br>16<br>mVGS= 10V,ID= 20A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 150V,VGS=0V<br>–––<br>–––<br>1.0<br>VDS= 150V,VGS=0V,TJ=125°C<br>IGSS <br>Gate-to-SourceForwardLeakage<br>–––<br>–––<br>100nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG(int)<br>Internal Gate Resistance<br>–––<br>0.8<br>–––<br><br>mA<br>~~eees~~<br>~~I tn ts~~<br>~~a es~~<br>~~Ds~~<br>~~ee~~<br>~~I I (RU~~<br>~~es~~<br>~~ns ~~~~**I**D RD RD(OO~~<br>~~a~~<br>~~I~~<br>~~(I~~<br>~~EEE~~<br>~~a a~~<br>~~ee~~<br>~~ee~~<br>~~—_———————————E~~<br>~~es es~~<br>~~ee~~<br>~~a~~<br>~~rs rs~~<br>~~rs rs(es~~|
|**Dynamic@ TJ = 25°C(unless otherwise specified)**|
|gfs<br>Forward Trans conductance<br>50<br>–––<br>–––<br>S<br>VDS= 50V,ID= 20A<br>Qg<br>Total Gate Charge<br>–––<br>73<br>110<br>ID= 20A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>24<br>–––<br>nC VDS= 75V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>20<br>–––<br>VGS= 10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>18<br>–––<br>ns<br>VDD= 75V<br>tr<br>RiseTime<br>–––<br>29<br>–––<br>ID= 20A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>27<br>–––<br>RG= 2.5<br>tf<br>Fall Time<br>–––<br>20<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>4440 –––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>390<br>–––<br>VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>84<br>–––<br>ƒ= 1.0MHz<br>~~a~~<br>~~ns ts Is ts(n(n~~<br>~~esa~~<br>~~ee~~<br>~~a es~~<br>~~a es~~<br>~~es~~<br>~~eses~~<br>~~es es~~<br>~~eses~~<br>~~a es~~<br>~~ee ee~~<br>~~eees~~<br>~~eees~~<br>~~ee~~|



|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~nDID~~|
|---|---|---|---|---|---|---|
|~~es~~|**Parameter **<br>~~nD~~|**Min.**<br>~~ID~~|**Typ. M**|**. Max.**|**Units**|**Conditions**|
|IS<br>~~es~~<br>~~+4~~|Continuous Source Current<br>(Body Diode)<br>~~nD ~~<br>~~+4~~|–––<br> ~~ID~~<br>~~+4~~|–––<br>~~+4~~|34<br>~~+4 fh~~|A<br>~~fh~~<br>~~ID~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~fh~~|
|ISM<br>~~+4~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~+4~~<br>~~ID~~|–––<br>~~+4~~<br>~~IID~~|–––<br>~~+4~~<br>~~tN~~|140<br>~~+4 fh~~<br>~~IN~~|||
|VSD<br>~~es~~<br>~~es~~|Diode Forward Voltage<br>~~ID~~|–––<br>~~IID~~|–––<br>~~tN~~|1.3<br>~~IN~~|V<br>~~ID~~|TJ= 25°C,IS= 20A,VGS= 0V|
|trr<br>~~es~~<br>~~es~~<br>~~eses~~|Reverse Recovery Time<br>~~ID ~~<br>~~es~~|–––<br> ~~IID~~<br>~~es~~|86<br>~~tN ~~<br>~~es~~|130<br> ~~IN ~~<br>~~es~~|ns   I<br> ~~ID~~<br>~~es~~|ns   IF= 20A<br>nC   VR= 128V<br>di/dt= 100A/µs|
|Qrr<br>~~es~~<br>~~eses~~|Reverse RecoveryCharge<br>~~es~~|–––<br>~~es~~|310<br>~~es~~|470<br>~~es~~|nC   V<br>~~es~~||
|IRRM<br>~~eses~~<br>~~a~~<br>~~ee~~|Reverse RecoveryCurrent<br>~~es~~|–––<br>~~es~~|6.7<br>~~es~~|–––<br>~~es~~|A<br>~~es~~||
|ton<br>~~ee~~|Forward Turn-On Time|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)|||||



**Notes:** 

>  Repetitive rating;  pulse width limited by max. junction temperature. 

>  Limited by TJmax, starting  TJ = 25°C, L = 0.85mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value. 

>  Pulse width 400µs; duty cycle  2%. 

> R is measured at TJ approximately 90°C. 

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IRFI4321PbF 

**==> picture [493 x 680] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>100 6.5V 6.5V<br>6.0V 6.0V<br>5.5V 100 5.5V<br>BOTTOM 5.0V BOTTOM 5.0V<br>10 mM)<br>10<br>5.0V<br>1<br>CEH TTI foo<br> 60µs PULSE WIDTH  60µs PULSE WIDTH<br>5.0V Tj = 25°C Tj = 150°C<br>0.1 BiEat 1 ill<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>1000 3.0<br>VDS = 25V ID = 20A<br> 60µs PULSE WIDTH 2.5 V GS  = 10V<br>100<br>T = 150°C<br>J  2.0<br>1 TOLL<br>10 1.5<br>Pasa FLCCCEEEL<br>TJ = 25 ° C 1.0<br>1 | SHSREEDZA0n<br>0.5<br>0.1 4am 0.0 CCCeae<br>3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig. 3  Typical Transfer Characteristics Fig. 4  Normalized On-Resistance vs. Temperature<br>7000 20<br>VGS   = 0V,       f = 1 MHZ ID= 20A<br>60005000 CCCiss rss  oss    = C = C= Cgds gd s + C+ Cggdd,  Cds SHORTED 16 V VDS= 75V VDSDS== 120V 30V<br>Ciss<br>12<br>4000 a all a Zo<br>3000<br>Ne Coss a | 8 Ae<br>2000<br>Bec ET 4 =” ann<br>1000 a a =<br>Crss<br>0 SMS STH 0 Ane<br>1 10 100 1000 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100<br>TJ = 150°C<br>10<br>1 TJ = 25°C<br>VGS = 0V<br>0.1 Hb}<br>0.2 0.4 0.6 0.8 1.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7.** Typical Source-to-Drain Diode Forward Voltage 

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35<br>30 ST<br>25<br>CPSC<br>20<br>COOP<br>15<br>PUTT ENT<br>10<br>HAE EEE EES<br>5 POPE<br>0 CHEE<br>25 50 75 100 125 150<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 9.** Maximum Drain Current vs. Case Temperature 

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5.0<br>4.0<br>Eaaens<br>3.0<br>Eaaave<br>2.0<br>1.0 pee}<br>Z<br>0.0 PPE<br>40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig. 11.** Typical COSS Stored Energy 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>1msec<br>10 100µsec<br>10msec<br>1<br>Tc = 25°C<br>Tj = 150°C DC<br>Single Pulse<br>ENE<br>0.1<br>0.1 1.0 10.0 100.0 1000.0<br>VDS  , Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>190<br>180<br>et<br>170<br>tad<br>160 ALLE<br>150 DPZAnn nana<br>Z<br>CLLLTE<br>140<br>-60 -40 -20 0 20 40 60 80 LE 100 120 L 140 160<br>TJ , Junction Temperature (°C)<br>  Drain-to-Source Breakdown Voltage<br>700<br>                 ID<br>600 TOP         4.6A<br>               5.4A<br>500 = BOTTOM   20A<br>400 iva<br>300<br>200<br>REE<br>IN<br>100<br>———<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy vs. Drain Current 

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10<br>TTT<br>D = 0.50<br>1<br>iS Semel<br>0.20<br>0.10<br>0.05<br>0.1 OATSe | R1R1 R2R2 R3R3 Ri (°C/W) (sec)<br>0.02  J  J C 0.312941 0.000381<br>0.01  1  1  2 2 3 3 1.187255 0.219458<br>0.01 Ci Ci =  = i  Ri iRi == 1.231176 2.895<br>Bari [iil] ge [ GaN] ee<br>SINGLE PULSE Notes:<br>yea ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 =——<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>St sun sulle |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**----- Start of picture text -----**<br>
100<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>10 senee| | A||<br>0.01<br>0.05<br>1 a 0.10 i<br>stNe<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming   j = 25°C and<br>0.1 Tstart = 150°C.<br>0.01<br>mmc EEE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Single Avalanche Event: Pulse Current vs. Pulse Width 

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**----- Start of picture text -----**<br>
180<br>TOP          Single Pulse<br>160 KL BOTTOM   1% Duty Cycle<br>ID = 20A<br>140 BNE<br>12010080 aNCLENELLELE NCEENE ELLE<br>60<br>CNCTENITT<br>40<br>POINTING<br>20 CCCP RETISN ES<br>CCEEPNCTES<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com)** 

- 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche =  tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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## ~~Cinfin eon~~ 

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6.0<br>ID = 1.0A<br>ID = 1.0mA<br>5.0 HTT I D  = 250µA<br>4.0<br>SS<br>3.0<br>LLLP<br>2.0<br>1.0 REREREBAN PPELEL EEL S<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
40<br>30 Lee:<br>20 ea<br>10 AY) ALLE IF = 33A<br>VR = 128V<br>TJ = 125°C<br>TJ =  25°C<br>0 ALL-_<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

**Fig 17.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
40 3200<br>2800<br>30 Ly) leery——— 2400 P T | ft ttytdes<br>2000<br>20 LTE 1600 Lt dae ie<br>y, eT<br>1200<br>10 PZARg aa IF = 50A ne 800 Ena? 2enn IF = 33A<br>VR = 128V VR = 128V<br>TJ = 125°C  400 T J  = 125°C<br>TJ =  25°C TJ =  25°C<br>0 He 0 Fr}aeeyttt a neeee| n |<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
32002800 Pt tt EL dt bg<br>2400 PPdeere Tf<br>2000<br>pttper | |<br>1600 EaPeplah<br>1200 aReZeaneee<br>800 EY| i IF = 50A<br>VR = 128V<br>400 T J  = 125°C<br>TJ =  25°C<br>0 yanenrt tL | ee|<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Stored Charge vs. dif/dt 

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~~Cinfi~~ 

IRFI4321PbF ~~Ld~~ 

**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>—w-<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>ae tp Y 0.01<br>\—<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp > |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 23a.** Switching Time Test Circuit 

**Fig 23b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Id<br>Vds i<br>Vgs<br>I<br>Vgs(th) | |<br>>t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

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IRFI4321PbF 

**TO-220 Full-Pak Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220 Full-Pak Part Marking Information** 

TO-220AB  Full-Pak packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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## IRFI4321PbF ~~Cinfineon LLL~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] **Moisture Sensitivity Level** TO-220 Full-Pak N/A **RoHS Compliant** Yes ~~—————~~ † Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Changed datasheet with Infineon logo - all pages.|
|04/27/2017||Corrected Package Outline on page 8.|
|||Added disclaimer on lastpage.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

9 

2017-04-27 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFI4321PBF/power-mosfet-n-channel-150-v-34-a-0016-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfi4321pbf/mosfet-n-ch-150v-34a-to-220ab/dp/2580016)
---

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