# Power MOSFET, N Channel, 250 V, 19 A, 0.038 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:2781128/)

**URL**: https://novapart.co/products/IRFI4229PBF/power-mosfet-n-channel-250-v-19-a-0038-ohm-to
**SKU**: IRFI4229PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6200
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 46W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781128/)

IRFI4229PbF 

## **Features** 

- Advanced Process Technology 

- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications 

- Low EPULSE Rating to Reduce Power 

   - Dissipation in PDP Sustain, Energy Recovery 

   - and Pass Switch Applications 

- Low QG for Fast Response 

- High Repetitive Peak Current Capability for Reliable Operation 

- Short Fall & Rise Times for Fast Switching 

- 150°C Operating Junction Temperature for 

   - Improved Ruggedness 

- Repetitive Avalanche Capability for Robustness and Reliability 

HEXFET[® ] Power MOSFET 

|||**Key Parameters**|**Key Parameters**|
|---|---|---|---|
|||VDSmax<br>250|V|
|||VDS (Avalanche)typ.<br>300<br>RDS(ON)typ.@10V<br>38|V<br>m|
|||IRPmax @ TC= 100°C<br>32<br>TJmax<br>150|A<br>°C|
|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>TO-220 Full-Pak<br>G<br>D<br>S<br>~~——~~||||



## **Description** 

This HEXFET[®] Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications 

|**Base Part Number**<br>**Package Type**<br>IRFI4229PbF<br>TO-220 Full-Pak<br>~~| —___} _fF~~|**Base Part Number**<br>**Package Type**<br>IRFI4229PbF<br>TO-220 Full-Pak<br>~~| —___} _fF~~|**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>Tube<br>50<br>IRFI4229PbF<br>~~4~~|**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>Tube<br>50<br>IRFI4229PbF<br>~~4~~|**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>Tube<br>50<br>IRFI4229PbF<br>~~4~~|**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>Tube<br>50<br>IRFI4229PbF<br>~~4~~|**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>Tube<br>50<br>IRFI4229PbF<br>~~4~~|**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>Tube<br>50<br>IRFI4229PbF<br>~~4~~|**Orderable Part Number**|
|---|---|---|---|---|---|---|---|---|
|**Absolute Maximum Ratings **|||||||||
|**Symbol**<br>**Parameter**||**Parameter**||**Max.**|||**Units**||
|VGS<br>Gate-to-Source Voltage||||± 30|||V||
|ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V|||||19||||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>IDM<br>Pulsed Drain Current|||||12<br>72||A||
|IRP@ TC= 100°C<br>Repetitive Peak Current|||||32||||
|PD@TC= 25°C<br>Maximum Power Dissipation|||||46||W||
|PD@TC= 100°C<br>Maximum Power Dissipation|||||18||||
|Linear DeratingFactor||||0.37|||W/°C||
|TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range||||-40  to + 150|||°C||
|SolderingTemperature,for 10 seconds|for 10 seconds(1.6mm from case)|||300|||||
|Mountingtorque,6-32 or M3 screw||||10 lbf•in(1.1N•m)|||||
|**Thermal Resistance**|||||||||
|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>2.73<br>RJA<br>Junction-to-Ambient<br>–––<br>65<br>°C/W<br>~~————————~~<br>~~ae~~|||||||||
|1<br>2017-04-27<br>~~————~~|||||||||



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IRFI4229PbF ~~LLL~~ 

|~~a~~<br>~~es~~<br>~~es~~|**Parameter**<br>~~rs~~<br>~~es~~<br>|**Min.**<br>~~rtrd~~<br>~~es~~<br>~~nn~~<br>|**Typ. Max. Units**<br>~~rs~~<br>~~es~~<br>~~nn~~<br>|**. Max. Units**<br>~~es~~<br>~~es~~<br><br>|**. Max. Units**<br>~~es~~<br>~~es~~<br><br>|**Conditions**<br>~~es~~<br>~~(~~<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~<br>~~es~~<br>~~es~~|Drain-to-SourceBreakdown Voltage<br>~~rs ~~<br>~~es~~<br>|250<br> ~~rtrd ~~<br>~~es~~<br>~~nn~~<br><br>~~re~~|–––<br> ~~rs ~~<br>~~es~~<br>~~nn~~<br><br>~~rs~~|–––<br> ~~es~~<br>~~es~~<br><br><br>~~(es~~|V<br>~~es~~<br>~~es~~<br><br><br>~~Qs~~|VGS=0V,ID= 250µA<br>~~es~~<br>~~(~~<br>|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~nn~~<br>~~es~~<br>~~re~~|340<br>~~es~~<br>~~nn~~<br>~~es~~<br>~~rs~~|–––<br>~~es~~<br><br>~~es~~<br>~~(es~~|mV/°C Reference to 25°C<br>~~es~~<br><br>~~es~~<br>~~Qs~~|mV/°C Reference to 25°C,ID= 1mA<br>~~es~~<br>~~(~~<br>~~es~~|
|RDS(on) <br>~~es~~|Static Drain-to-Source On-Resistance<br>|–––<br>~~nn~~<br><br>~~re ~~|38<br>~~nn ~~<br><br> ~~rs ~~|46<br> <br><br> ~~(es~~|m<br> <br><br>~~Qs~~|VGS= 10V,ID= 11A<br> ~~(~~<br>|
|VGS(th)|Gate Threshold Voltage|3.0|–––|5.0|V|VDS= VGS, ID= 250µA<br>mV/°C|
|VGS(th)/TJ|Gate Threshold Voltage Temp. Coefficient|–––|-12|–––|mV/°C||
|GS(th)/<br>IDSS<br>~~a~~|Drain-to-Source Leakage Current<br>|–––<br>|–––<br>|20<br>|µA<br>|VDS= 250V,VGS=0V<br>|
|||–––<br>|–––<br>|200<br>||VDS= 250V,VGS= 0V,TJ=150°C<br>|
|IGSS <br>~~OO~~<br>~~es~~|Gate-to-SourceForwardLeakage<br>~~OO~~|–––<br>~~OO~~|–––<br>~~OO~~|100<br>~~OO~~|nA <br>~~OO~~<br>~~rs~~|VGS= 20V<br>~~OO~~|
||Gate-to-Source Reverse Leakage<br>~~OO~~<br>~~rs~~|–––<br>~~OO~~<br>~~ss~~|–––<br>~~OO~~<br>~~ss~~|-100<br>~~OO~~<br>~~rs~~||VGS= -20V<br>~~OO~~<br>~~(~~|
|gfs<br>~~OO~~<br>~~es~~|ForwardTrans conductance<br>~~OO~~<br>~~rs~~|26<br>~~OO~~<br>~~ss~~|–––<br>~~OO~~<br>~~ss~~|–––<br>~~OO~~<br>~~rs~~|S<br>~~OO~~<br>~~rs~~|VDS= 25V,ID= 11A<br>~~OO~~<br>~~(~~|
|Qg<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~rs ~~<br>~~es~~|–––<br> ~~ss~~<br>~~es~~|73<br>~~ss~~<br>~~es~~|110<br>~~rs~~<br>~~es~~|nC <br>~~rs~~|ID= 11A,VDS= 125V<br>VGS= 10V<br>~~(~~|
|Qgd<br>~~ee~~|Gate-to-DrainCharge<br>~~es~~|–––<br>~~es~~|24<br>~~es~~|–––<br>~~es~~|||
|gd<br>td(on)<br>~~ee~~|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|18<br>~~es~~|–––<br>~~es~~|ns<br>~~Qe~~|VDD= 125V, VGS= 10V<br>ID= 11A<br>RG= 2.4<br>See Fig. 22|
|tr<br>~~es~~<br>~~ee~~|RiseTime<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|17<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|||
|td(off)<br>~~ee~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|32<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|d(off)<br>tf<br>~~ee~~<br>~~es~~<br>~~a~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~ers~~|–––<br>~~ee~~<br>~~ee~~<br>~~rs~~|13<br>~~ee~~<br>~~ee~~<br>~~rs~~|–––<br>~~ee~~<br>~~ee~~<br>~~(rs~~|||
|tst<br>~~es~~<br>~~a~~|Shoot Through BlockingTime<br>~~ee~~<br>~~ers~~|100<br>~~ee~~<br>~~rs~~|–––<br>~~ee~~<br>~~rs~~|–––<br>~~ee~~<br>~~(rs~~|ns<br>~~Qe~~|VDD= 200V,VGS= 15V,RG= 5.1|
|EPULSE<br>~~a~~<br>~~ee~~<br>~~ee es~~<br>~~—~~|Energy per Pulse<br>~~ers~~<br><br>~~es~~<br>|–––<br>~~rs ~~<br>~~et~~<br>|770<br> ~~rs ~~<br>~~etff~~<br>|–––<br> ~~(rs~~<br>~~ff~~<br>|µJ<br>~~Qe~~<br>~~ff~~<br>~~B~~|L = 220nH, C = 0.3µF, VGS= 15V<br>VDD= 200V,RG=5.1TJ= 25°C|
|||–––<br>~~et~~<br><br>~~ee~~|1380<br>~~etff~~<br><br>~~ee~~|–––<br>~~ff~~<br>||L = 220nH, C = 0.3µF, VGS= 15V<br>VDD= 200V,RG=5.1TJ= 100°C<br>~~B~~~~**e**~~|
|Ciss<br>~~ee~~<br>~~ee es~~<br>~~—~~|Input Capacitance<br>~~es~~<br>~~es~~<br>|–––<br>~~et~~<br>~~es~~<br>~~ee~~|4480<br>~~etff~~<br>~~es~~<br>~~ee~~|–––<br>~~ff~~<br>~~es~~|pF<br>~~ff~~<br>~~B~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~B~~~~**e**~~<br>~~e~~|
|Coss<br>~~ee~~<br>~~ee es~~<br>~~—~~|Output Capacitance<br><br>~~es~~<br>|–––<br>~~et~~<br><br>~~ee~~|400<br>~~et ff~~<br><br>~~ee~~|–––<br>~~ff~~<br>|||
|Crss<br>~~ee es~~<br>~~—Pe~~|ReverseTransferCapacitance<br>~~es~~<br>~~Pe~~|–––<br>~~ee ~~|100<br> ~~ee~~|–––|||
|Cosseff.<br>~~es~~<br>~~—Pe~~|Effective Output Capacitance<br>~~es~~<br>~~Pe~~|–––|270|–––||VGS= 0V,VDS= 0V to 200V<br>~~B~~~~**e**~~<br>~~e~~|
|LD<br>~~Pe~~<br>~~pf~~|Internal Drain Inductance<br>~~Pe~~<br>~~pf~~|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~e~~|
|LS|Internal Source Inductance|–––|7.5|–––|||



## **Avalanche Characteristics** 

## **Diode Characteristics** 

||**Parameter **|**Min.**|**Typ. M**|**. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS@ TC= 25°C|Continuous Source Current<br>(Body Diode)|–––|–––|18|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)|–––|–––|72|||
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 11A,VGS= 0V|
|trr|Reverse Recovery Time|–––|120|180|ns  T|ns  TJ= 25°C ,IF= 11A, VDD= 50V<br>nC   di/dt = 100A/µs|
|Qrr|Reverse RecoveryCharge|–––|540|810|nC   di/dt = 100A/||



**Notes:** 

 Repetitive rating;  pulse width limited by max. junction temperature. 

 starting  TJ = 25°C, L = 1.9mH, RG = 25, IAS = 11A. 

-  Pulse width 400µs; duty cycle  2%. 

-  Rθ is measured at TJ of approximately 90°C. 

-  Half sine wave with duty cycle = 0.25, ton=1μsec. 

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## ~~Cinfineon~~ 

**==> picture [480 x 674] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>100 8.0V 7.0V 8.0V 7.0V<br>6.5V 100 6.5V<br>6.0V 6.0V<br>5.5V 5.5V<br>10 BOTTOM 5.0V BOTTOM 5.0V<br>10<br>Se— | Z—aaa<br>5.0V<br>1<br>1<br>0.1 5.0V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 oo 0.1 bes<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1.  Typical Output Characteristics  Fig. 2.  Typical Output Characteristics<br>100 3.0<br>VDS = 25V I D  = 11A<br>60µs PULSE WIDTH 2.5 V GS  = 10V<br>10 | [ttt<br>2.0<br>ZL, or<br>1.5<br>1 LAS TJ = 150°C TJ = 25°C SERRE Zane<br>1.0<br>0.5<br>0.1 VV ) | erSnnP E PZELLLEAnn<br>0.0 EE<br>3 4 5 6 7<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig. 3.  Typical Transfer Characteristics Fig. 4.<br>1400 1400<br>L = 220nH L = 220nH<br>C = 0.3µF 1200 C = variable<br>1200<br> 100°C  100°C<br> 25°C   25°C<br>1000<br>1000<br>800<br>800<br>600<br>600<br>400<br>400<br>200<br>200 0<br>140 150 160 170 180 190 200 210 100 110 120 130 140 150 160 170<br>VDS, Drain-to-Source Voltage (V) ID, Peak Drain Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>Energy per Pulse (µJ) Energy per Pulse (µJ)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig. 2.** Typical Output Characteristics 

**Fig. 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical EPULSE vs. Drain-to-Source Voltage 

**Fig 6.** Typical EPULSE vs. Drain Current 

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**==> picture [500 x 674] intentionally omitted <==**

**----- Start of picture text -----**<br>
1800 100<br>L = 220nH<br>1600<br>1400 C = 0.3µF<br>TJ = 150°C<br>1200 10<br>1000<br>C = 0.2µF<br>800<br>600 1 TJ = 25°C<br>400 C = 0.1µF<br>200<br>V GS  = 0V<br>0 0.1<br>Af<br>20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0<br>Temperature (°C) VSD, Source-to-Drain Voltage (V)<br>Fig. 7.  Typical EPULSE vs. Temperature   Fig 8.   Typical Source-Drain Diode Forward Voltage<br>7000 12.0<br>VGS   = 0V,       f = 1 MHZ ID= 11A<br>60005000 tT C C Ciss rss  oss    = C  = C = Cgds gd s + C+ Cggdd,  C ds SHORTED 10.0 VVV DS DSDS== 125V= 50V 200V<br>Ciss | ] 8.0 We<br>4000<br>om I<br>6.0<br>CT TT ZZ<br>3000<br>) Coss Ve<br>4.0<br>2000 Tl |<br>2.0<br>1000 /<br>BER Crss [U] HA<br>0 PSEC CT 0.0 AREEEEEE<br>1 10 100 1000 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 9.   Typical Capacitance vs.Drain-to-Source Voltage  Fig 10.   Typical Gate Charge vs. Gate-to-Source Voltage<br>20 1000<br>18 wm | | OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>16 100<br>14 a SS ul ttt<br>100µsec<br>12 10<br>St Catia i Bal<br>10<br>1msec<br>8 Ni 1 poe<br>10msec<br>a a ee<br>6<br>4 0.1 Tc = 25°C<br>2 Tj = 150°C<br>Single Pulse<br>0 REPS 0.01 7A<br>25 50 75 100 125 150 1 10 100 1000<br> TC , Case Temperature (°C) VDS, Drain-to-Source Voltage (V)<br>Energy per Pulse (µJ)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain Current (A)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

## **Fig 9.** Typical Capacitance vs.Drain-to-Source Voltage 

## **Fig 10.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 11.** Maximum Drain Current vs. Case Temperature **Fig 12.** Maximum Safe Operating Area 4 2017-04-27 ~~©... =~~ °° 

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**==> picture [450 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 450<br>180 I D  = 11A 400 ID<br>TOP         2.3A<br>160 HEE 350 KOE 2.7A<br>BOTTOM 11A<br>140<br>300<br>120<br>ee -——<br>TJ = 125°C 250<br>100<br>200<br>80 et} 4 CACO<br>60 | $+ 150 NACEEE EEE<br>TJ = 25°C<br>40 Ee Ee 100 PARE<br>20 se 50 CSRS<br>0 | | ft TT 0 | tt | |ome<br>5 6 7 8 9 10<br>25 50 75 100 125 150<br>VGS, Gate -to -Source Voltage  (V) Starting TJ , Junction Temperature (°C)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig. 13.** On-Resistance Vs. Gate Voltage 

**==> picture [204 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0<br>4.0<br>ID = 250µA<br>3.0<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 14.** Maximum Avalanche Energy Vs. Temperature 

**==> picture [204 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>ton= 1µs<br>Duty cycle = 0.25<br>50        Half Sine Wave<br>  Square Pulse<br>cucuaw<br>40<br>30 HL NT<br>20<br>P|PLN<br>ew<br>10<br>|<br>0 | TN<br>25 50 75 100 125 150<br>Case Temperature (°C)<br>Repetitive Peak Current (A)<br>**----- End of picture text -----**<br>


**Fig. 15.** Threshold Voltage vs. Temperature 

**Fig. 16.** Typical Repetitive peak Current vs. Case temperature 

**==> picture [423 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ST D = 0.50 ee<br>1<br>0.20<br>0.10<br>0.05<br>0.1 Se 0.02 ts = suEN R1R1 R2R2 R3R AD 3 Ri (°C/W)  a i (sec)<br>0.01 0.01  J  J 1 1 2 2  3 3  C  C 0.3671 1.0580  0.000287 0.162897<br>Ci= iRi<br>SINGLE PULSE Ci= iRi 1.3076  2.426<br>Ce ( THERMAL RESPONSE ) Ee<br>0.001<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>rit<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 19a.** Unclamped Inductive Test Circuit 

**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20a.** Gate Charge Test Circuit 

**Fig 20b.** Gate Charge Waveform 

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**Fig 21a.** tst  and EPULSE Test Circuit 

**Fig 21b.** tst Test Waveforms 

**Fig 21c.** EPULSE Test Waveforms 

**Fig 22a.** Switching Time Test Circuit 

**Fig 22b.** Switching Time Waveforms 

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**TO-220 Full-Pak Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220 Full-Pak Part Marking Information** 

TO-220AB  Full-Pak packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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## IRFI4229PbF ~~Cinfineon LLL~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] **Moisture Sensitivity Level** TO-220 Full-Pak N/A **RoHS Compliant** Yes ~~—————~~ † Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Changed datasheet with Infineon logo - all pages.|
|04/27/2017||Corrected Package Outline on page 8.|
|||Added disclaimer on lastpage.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

9 

2017-04-27 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFI4229PBF/power-mosfet-n-channel-250-v-19-a-0038-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfi4229pbf/mosfet-n-ch-250v-19a-to-220fp/dp/2781128)
---

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