# Power MOSFET, N Channel, 150 V, 34 A, 0.0122 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2781127/)

**URL**: https://novapart.co/products/IRFI4228PBF/power-mosfet-n-channel-150-v-34-a-00122-ohm-to
**SKU**: IRFI4228PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 46W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 46W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0122ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.0122ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781127/)

## IRFI4228PbF 

## **Features** 

Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications ° Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications 

Low QG for Fast Response 

High Repetitive Peak Current Capability for Reliable Operation 

Short Fall & Rise Times for Fast Switching 150°C Operating Junction Temperature for Improved Ruggedness 

Repetitive Avalanche Capability for Robustness and Reliability 

|IRFI4228PbF<br>PD -97228<br>SWITCH|IRFI4228PbF<br>PD -97228<br>SWITCH|IRFI4228PbF<br>PD -97228<br>SWITCH|
|---|---|---|
|**Key Parameters**|||
|VDSmax|150|V|
|VDS(Avalanche) typ.|180<br>~~ee~~|V|
|RDS(ON)typ. @ 10V<br>~~ee~~|12.2<br>~~ee~~<br>~~ee~~|m<br>~~ee~~|
|IRPmax @ TC= 100°C|61<br>~~ee~~|A|
|TJmax|150|°C|



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D D 2 hy<br>G S<br>D<br>G<br>S<br>TO-220AB Full-Pak<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Description** 

HEXFET[®] Power MOSFET 

OSFET 

MOSFET 

MOSFET 

## **Absolute Maximum Ratings** 

|~~es~~||||
|---|---|---|---|
|~~es~~<br>~~es~~|**Parameter**<br>~~Q~~|**Max.**<br>~~Q~~|**Units**<br>~~Q~~|
|VGS<br>~~es~~<br>~~es~~<br>~~Ge~~|Gate-to-Source Voltage<br>~~Q~~<br>~~Ge~~|±30<br>~~Q~~<br>~~Oe~~|V<br>~~Q~~|
|ID@ TC= 25°C<br>~~es~~<br>~~Ge~~|Continuous Drain Current, VGS@ 10V<br>~~Q~~<br>~~Ge~~|34<br>~~Q~~<br>~~Oe~~|A<br>~~Q~~|
|ID@ TC= 100°C<br>~~Ge~~<br>~~sO~~|Continuous Drain Current, VGS@ 10V<br>~~Ge~~<br>~~sO~~|21<br>~~Oe~~<br>~~sO~~||
|IDM<br>~~sO~~<br>~~©~~|Pulsed Drain Current<br>~~sO~~<br>~~©~~|130<br>~~sO~~<br>~~©~~||
|IRP@ TC= 100°C<br>~~sO~~<br>~~Ge~~|Repetitive Peak Current<br>~~sO~~<br>~~Ge~~|61<br>~~sO~~<br>~~Oe~~||
|PD@TC= 25°C<br>~~sO~~<br>~~Ge~~|Power Dissipation<br>~~sO~~<br>~~Ge~~|46<br>~~sO~~<br>~~Oe~~|W|
|PD@TC= 100°C<br>~~Ge~~<br>~~sO~~|Power Dissipation<br>~~Ge~~<br>~~sO~~|18<br>~~Oe~~<br>~~sO~~||
|~~sO~~<br>~~eC~~<br>~~pf~~|Linear DeratingFactor<br>~~sO~~<br>~~eC~~<br>~~pf~~|0.37<br>~~sO~~<br>~~eC~~|W/°C<br>~~eC~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-40  to + 150|°C|
|~~pf~~|SolderingTemperature for 10 seconds<br>~~pf~~|300<br>~~G~~||
|~~pf~~<br>~~a~~|MountingTorque,6-32 or M3 Screw<br>~~pf~~<br>~~a~~|10lb in(1.1N m)<br>~~a~~<br>~~G~~|N<br>~~a~~|



Notes O) hrough © are on page 8 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~<br>~~es~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~es~~|**Min.**<br>~~Gd~~<br>~~es~~<br>~~rs~~|**Typ.**<br>~~rs~~<br>~~es~~<br>~~Gs~~|**Max. **<br>~~GO~~<br>~~es~~<br>~~Gs~~|**Units**<br>~~GO~~<br>~~es~~<br>~~GO~~|**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~es~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~es~~|150<br>~~Gd ~~<br>~~es~~<br>~~rs~~|–––<br> ~~rs~~<br>~~es~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~<br>~~Gs~~|V<br>~~GO~~<br>~~es~~<br>~~GO~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆ΒVDSS/∆TJ<br>~~es~~<br>~~a~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~rs~~<br>|–––<br>~~es~~<br>~~rs ~~<br>~~**r**d~~<br><br>~~s~~|190<br>~~es~~<br> ~~Gs~~<br>~~r~~~~**s**~~<br>|–––<br>~~es~~<br>~~Gs~~<br>~~GO~~|mV/°C<br>~~es~~<br>~~GO~~<br>~~GO~~|Reference to 25°C, ID= 1mA<br>~~es~~|
|RDS(on)<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~rs~~<br>~~e~~|–––<br>~~**r**d~~<br>~~e~~<br>~~s~~|12.2<br>~~r~~~~**s**~~<br>~~e~~|16<br>~~GO~~|mΩ<br>~~GO~~|VGS= 10V, ID= 20A|
|VGS(th)<br>~~es~~<br>~~S~~|Gate Threshold Voltage<br>~~rs ~~<br>~~e~~<br>~~SS~~|3.0<br> ~~**r**d ~~<br>~~e~~<br>~~s~~<br>~~S~~|–––<br> ~~r~~~~**s** ~~<br>~~e~~<br>~~S~~|5.0<br> ~~GO~~<br>~~S~~|V<br>~~GO~~<br>~~S~~|VDS= VGS, ID= 250µA<br>~~ee~~|
|∆VGS(th)/∆TJ<br>~~S~~|Gate Threshold Voltage Coefficient<br>~~SS~~|–––<br>~~S~~|-12<br>~~S~~|–––<br>~~S~~|mV/°C<br>~~S~~||
|IDSS<br>~~S~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~SS~~|–––<br>~~S~~<br>~~———————e~~|–––<br>~~S~~<br>~~———————e~~|20<br>~~S~~<br>~~———————e~~|µA<br>~~S~~<br>~~———————e~~|VDS= 150V, VGS= 0V<br>~~ee~~<br>~~———————e~~|
|||–––<br>~~———————e~~|–––<br>~~———————e~~|1.0<br>~~———————e~~|mA<br>~~———————e~~|VDS= 150V, VGS= 0V, TJ= 125°C<br>~~———————e~~|
|IGSS<br>~~a~~<br>~~Fo~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~Fo~~|–––<br>~~———————e~~<br>~~ee~~<br>~~Fo~~|–––<br>~~———————e~~<br>~~es~~<br>~~Fo~~|100<br>~~———————e~~<br>~~Fo~~|nA<br>~~———————e~~<br>~~Fo[~~|VGS= 20V<br>~~———————e~~<br>~~[~~|
||Gate-to-Source Reverse Leakage<br>~~ee ~~<br>~~Fo~~|–––<br> ~~ee ~~<br>~~Fo~~|–––<br> ~~es~~<br>~~Fo~~|-100<br>~~Fo~~||VGS= -20V<br>~~[~~|
|gfs<br>~~Fo~~<br>~~a ~~|Forward Transconductance<br>~~Fo~~<br> ~~er~~|64<br>~~Fo~~<br>~~er~~<br>~~Gd~~|–––<br>~~Fo~~<br>~~er~~<br>~~rs~~|–––<br>~~Fo~~<br>~~er~~<br>~~GO~~|S<br>~~Fo[~~<br>~~er~~<br>~~GO~~|VDS= 25V, ID= 20A<br>~~[~~<br>~~er~~|
|Qg<br>~~$f~~|Total Gate Charge<br>~~$f~~|–––<br>~~Gd~~<br>~~$f~~|73<br>~~rs ~~<br>~~$f~~|110<br> ~~GO~~<br>~~$f~~|nC<br>~~GO~~<br>~~$f~~<br><br>~~GO~~|VDD= 75V, ID= 20A, VGS= 10V<br>~~$f~~<br>|
|Qgd<br>~~$f~~<br>~~a ~~<br>~~es~~|Gate-to-Drain Charge<br>~~$f~~<br> ~~ee~~<br>|–––<br>~~$f~~<br>~~ee~~<br>~~es~~<br><br>~~rs~~|20<br>~~$f~~<br>~~ee~~<br><br>~~rs~~|–––<br>~~$f~~<br>~~ee~~<br><br>~~GO~~|||
|tst<br>~~es~~|Shoot Through BlockingTime<br>~~en~~|100<br>~~es~~<br>~~en~~<br>~~rs~~|–––<br>~~en~~<br>~~rs~~|–––<br>~~en~~<br>~~GO~~|ns<br>~~en~~<br>~~GO~~|VDD= 120V, VGS= 15V, RG= 5.1Ω<br>~~en~~|
|EPULSE<br>~~es~~<br>~~ee~~|Energy per Pulse<br>~~en~~<br>|–––<br>~~es~~<br>~~en~~<br>~~rs~~|62<br>~~en~~<br>~~rs ~~|–––<br>~~en~~<br> ~~GO~~|µJ<br>~~en~~<br>~~GO~~<br>~~ft fp~~|VDS= 120V, RG= 5.1Ω,TJ= 25°C<br>L = 220nH, C= 0.3µF,  VGS= 15V<br>~~en~~|
|||–––<br>~~ef~~<br>|110<br>~~efft~~<br>|–––<br>~~ft~~<br>||L = 220nH, C= 0.3µF,  VGS= 15V<br>VDS= 120V, RG= 5.1Ω,TJ= 100°C<br>~~fp~~|
|Ciss<br>~~ee~~|Input Capacitance<br>~~ee~~|–––<br>~~ef~~<br>~~ee~~<br>~~es~~|4560<br>~~efft~~<br>~~ee~~|–––<br>~~ft~~<br>~~ee~~|pF<br>~~ft fp~~|VDS= 25V<br>VGS= 0V<br>ƒ= 1.0MHz<br>~~fp~~|
|Coss<br>~~ee~~|Output Capacitance<br>|–––<br>~~ef~~<br><br>~~es~~|560<br>~~ef ft~~<br>|–––<br>~~ft~~<br>|||
|Crss<br>~~ee~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|110<br>~~ee~~|–––<br>~~ee~~|||
|Cosseff.<br>~~ee~~<br>~~es~~|Effective Output Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|460<br>~~ee~~|–––<br>~~ee~~||VGS= 0V, VDS= 0V to 120V|
|LD<br>~~es~~<br>~~AA~~|Internal Drain Inductance<br>~~es~~<br>~~AA~~|–––<br>~~es~~<br>~~44]~~|4.5<br>~~44]~~|–––<br>~~44]~~|nH<br>~~44]~~|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS<br>~~AA~~<br>~~a ee~~|Internal Source Inductance<br>~~AA~~<br>~~ee~~|–––<br>~~44]~~<br>~~ee~~<br>~~ee~~|7.5<br>~~44]~~<br>~~ee~~<br>~~ee~~|–––<br>~~44]~~<br>~~ee~~<br>~~ee~~|||



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1000 1000<br>≤60µs PULSE WIDTH VGS VGS<br>Tj = 25°C TOP           15V10V TOP           15V10V<br>pce pl 8.0V7.0V p e] 8.0V7.0V<br>100 6.5V 6.5V<br>A re 6.0V5.5V 100 n t Ps 6.0V5.5V<br>i Ae BOTTOM 5.0V P | BOTTOM 5.0V<br>10 P et fh<br>7 TT EIa E DY esc A ee<br>10<br>5.0V<br>1<br>cE E e > f/i M ret<br>SE a YH ≤60µs PULSE WIDTH l<br>5.0V Tj = 150°C<br>0.1 tuSeligerCIatti eetil 1 HE ETponyil<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 a 3.0<br>VDS = 25V ID = 20A<br>≤60µs PULSE WIDTH 2.5 VGS = 10V<br>100<br>ee a e ae e e 2.0 tesS anennnass<br>10 TJ = 150°C 1.5<br>pt 4<br>— — Ss a PT ELE LEET wT MLL<br>1.0<br>1 TJ = 25°C<br>a ee esee<br>i f7 If) e T<br>0.5<br>a _|<br>0.1 ey eea | 0.0 P TEELE tttELEELEELty yt ttyEL<br>3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics Fig 4.   Normalized On-Resistance vs. Temperature<br>120 120<br>L = 220nH L = 220nH<br>110 110<br>C = 0.3µF C = Variable<br>100  100°C 100  100°C<br> 25°C    25°C<br>90<br>90<br>80 = FREE<br>80<br>70 n ae ae<br>70<br>60<br>60<br>50<br>50<br>40<br>s eer zene<br>40<br>30<br>3020 Pee 2010 eee<br>80 90 100 110 120 130 60 65 70 75 80 85 90 95 100 105<br>VDS, Drain-to-Source Voltage (V) ID, Peak Drain Current (A)<br>Energy per Pulse (µJ)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>Energy per Pulse (µJ)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical EPULSE vs. Drain Current 

**Fig 5.** Typical EPULSE vs. Drain-to-Source  Voltage 

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140<br>L = 220nH<br>120 a na<br>C = 0.3µF<br>100<br>C = 0.2µF<br>80 Y/Y —<br>60<br>40 A a C = 0.1µF<br>20<br>— _<br>0 PTTL<br>20 40 60 80 100 120 140 160<br>Temperature (°C)<br>Energy per Pulse (µJ)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical EPULSE vs.Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>Crss    = Cgd<br>10000 Coss   = Cds + Cgd<br>Ciss<br>1000 FI Coss NS<br>Crss<br>100<br>B i e n all<br>ee See mene<br>ee<br>10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Capacitance vs.Drain-to-Source Voltage 

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35<br>30<br>25<br>20<br>p p EN<br>15<br>105 Pa | | | IN\<br>0<br>25 50 75 100 125 150<br> TJ , Junction Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Drain Current vs. Case Temperature 

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1000<br>S e<br>100 e eee<br>a ae<br>TJ = 150°C<br>10 _ ff TJ = 25°C<br>fefe<br>1<br>VGS = 0V<br>fiee i<br>0.1 fipf<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

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12.0<br>ID= 20A<br>10.0 VDS= 120V<br>VDS= 75V Vy<br>VDS= 30V<br>8.0<br>6.0<br>4.0<br>Y A<br>2.0<br>!<br>Z a<br>0.0<br>0 10 20 30 40 50 60 70 80<br> QG,  Total Gate Charge (nC)<br>  Typical Gate Charge vs.Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>1 00µsec<br>10msec<br>10 B eilm tii c i atifait<br>1msec<br>1<br>Tc = 25°C<br>fd cgiee ctVi i, t taleeas<br>Tj = 150°C<br>Single Pulse Hi i a l sel<br>0.1<br>0 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Gate Charge vs.Gate-to-Source Voltage 

**Fig 12.** Maximum Safe Operating Area 

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160 700<br>ID = 20A ID<br>140 Ao w ae<br>600 TOP         4.6A<br>5.4A<br>120<br>{ttt N aan BOTTOM 20A<br>500<br>100<br>PF ttpE tt tf L UGee<br>400<br>80<br>tt tt C ALLE<br>300<br>60 PTA tT tt K A<br>200<br>40 T J  = 125°C<br>CAE Te P NG ET<br>20 100<br>EE TJ = 25°C S S<br>0 P| (Ap 0 E ee<br>4 5 6 7 8 9 10 11 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 13.    On-Resistance vs. Gate Voltage Fig 14.   Maximum Avalanche Energy vs. Temperature<br>5.0 100<br>ton= 1µs<br>Duty cycle = 0.25<br>4.5        Half Sine Wave<br>80<br>E NSEEREEE a e   Square Pulse<br>4.0<br>A NE 60 iw<br>ID = 250µA<br>3.5<br>NT LE T== I N<br>40<br>3.0<br>t ees CLL<br>20<br>2.5<br>B EREEEELN "<br>2.0 T ELL LELy 0 | ft tL<br>-75 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125<br>TJ , Temperature ( °C ) Case Temperature (°C)<br>Fig 15.   Threshold Voltage vs. Temperature Fig 16.   Typical Repetitive peak Current vs.<br>Case temperature<br>10<br>D = 0.50<br>1<br>0.20<br>0.10<br>0.1 a 0.05 . R1 R1 R ca 2 R2 y R3R3 Ri (°C/W)    τi (sec)<br>0.02 τJ τJ τCτ 0.3129    0.000381<br>0.01 τ1τ1 τ2 τ2 τ3τ3 1.1873    0.219458<br>0.01 ae Ci= τi/Ri 1.2311     2.895 Lt<br>OT Ci τi/Ri<br>0.001 wd SINGLE PULSE aan i eeivmesermeccalllee lll<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>PLEA CEE ETI EERE EE 2. Peak Tj = P dm x Zthjc + Tc |<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>VGS(th), Gate Threshold Voltage (V)<br>Repetitive Peak Current (A)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Temperature 

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100<br>ton= 1µs<br>Duty cycle = 0.25<br>       Half Sine Wave<br>80<br>a e   Square Pulse<br>60 iw<br>T== I N<br>40<br>CLL<br>20<br>"<br>0 | ft tL<br>25 50 75 100 125 150<br>Case Temperature (°C)<br>Repetitive Peak Current (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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Driver Gate Drive<br>P.W.<br>D.U.T + {<—— P.W. Period —_—— — D = —— Period<br>) [®@]    •  Circuit Layout Considerations | f V | GS=10V<br> •<br>| ——| - LowGround Stray Pla I n eductance<br> •   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>- - + Current Current di/dt<br>o eet ® ®r D.U.T. VDS Waveform Diode Recoverydv/dt NN‘<br>00 > VDD<br>•   Re-Applied<br>Re ) •   difdtDriver controlledsame type by Reas D.U.T. Vpp + Voltage Body Diode  Forward Drop -<br>•   -<br>•<br>D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Q” Isp controlled by Duty Factor"D" ® t<br>**----- End of picture text -----**<br>


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Fig 18.<br>**----- End of picture text -----**<br>


## for N-Channel HEXFET Power MOSFETs 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 20a.** Gate Charge Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 20b.** Gate Charge Waveform 

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A<br>RG C<br>DRIVER<br>L<br>I AWS 4 |<br>VCC<br>B<br>Ipulse<br>RG<br>; |<br>LAr | V DUT<br>**----- End of picture text -----**<br>


**Fig 21a.** tst  and EPULSE Test Circuit 

**Fig 21b.** tst Test Waveforms 

**Fig 21c.** EPULSE Test Waveforms 

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TO-220AB  Full-Pak packages are not recommended for Surface Mount Application. 

Repetitive rating;  pulse width limited by  max. junction temperature. Starting TJ = 25°C, L = 0.85mH, RG = 25Ω, IAS = 20A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

> Rθ is measured at Ty of approximately 90°C. Half sine wave with duty cycle = 0.25, ton=1µsec. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/06 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfi4228pbf/mosfet-n-ch-150v-34a-to-220ab/dp/2781127)
---

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