# Power MOSFET, N Channel, 100 V, 72 A, 4500 µohm, TO-220FP, Through Hole
**URL**: https://novapart.co/products/IRFI4110GPBF/power-mosfet-n-channel-100-v-72-a-4500-ohm-to
**SKU**: IRFI4110GPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3700
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0037; Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 61W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 72A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1888169/)
IRFI4110GPbF
HEXFET[® ] Power MOSFET
## **Applications**
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**----- Start of picture text -----**
VDSS 100V
RDS(on) typ. 3.7m
RDS(on) max. 4.5m
ID 72A
E iS==
S
D
G
TO-220 Full-Pak
G D S
Gate Drain Source
eees
**----- End of picture text -----**
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
## **Benefits**
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free
- Halogen-Free
|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|**Base Part Number**
**Package Type**
**Standard Pack**
**Orderable Part Number**
**Form**
**Quantity**
IRFI4110GPbF
TO-220 Full-Pak
Tube
50
IRFI4110GPbF
~~————~~|
|---|---|---|---|---|---|---|
|**Absolute Maximum Ratings **|||||||
|**Symbol**
**Parameter**|||**Max.**||**Units**||
|ID@ TC= 25°C
Continuous Drain Current, VGS@ 10V|||72||||
|ID @TC= 100°C
Continuous Drain Current,VGS @10V|||51||A||
|IDM
Pulsed Drain Current|||290||||
|PD@TC= 25°C
Maximum Power Dissipation|||61||W||
|Linear Derating Factor|||0.41||W/°C||
|VGS
Gate-to-Source Voltage|||± 20||V||
|dv/dt
Peak Diode Recoverydv/dt|||27||V/ns||
|TJ
Operating Junction and|||-55 to + 175||||
|TSTG
Storage Temperature Range|||||°C||
|SolderingTemperature,for 10 seconds(1.6mm from case)|||300||||
|Mountingtorque,6-32 or M3 screw|||10 lbf•in(1.1N•m)
||||
|**Avalanche Characteristics**|||||||
|EAS
Single Pulse Avalanche Energy (ThermallyLimited)
71
mJ
IAR
Avalanche Current
43
A
EAR
Repetitive Avalanche Energy
6.1
mJ
~~ee~~|||||||
|**Thermal Resistance**|||||||
|**Symbol**
**Parameter**
**Typ. **
**Max.**
**Units**
RJC
Junction-to-Case
–––
2.46
RJA
Junction-to-Ambient(PCB Mount)
–––
65
°C/W
~~cs~~|||||||
|1
2017-04-27
~~=a~~|||||||
~~Cinfin eon~~
IRFI4110GPbF ~~LLL~~
**==> picture [547 x 370] intentionally omitted <==**
**----- Start of picture text -----**
|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Electrical Characteristics @ TJ = 25°C (unless otherwise specified)|
|Parameter|Min.|Typ. Max.|Units|Conditions|
|ee|nr|td|rs|I|
|ee|V(BR)DSS|Drain-to-Source Breakdown Voltage|nD|(NO|100|–––|(QO|–––|V|VGS|= 0V, ID|= 250µA|
|ee|V(BR)DSS/TJ|Breakdown Voltage Tem|ns|p. Coefficient|–––|ts|0.11|I|Ss|–––|V/°C Reference to 25°C, ID = 5mA |
|RDS(on)|Static Drain-to-Source On-Resistance|–––|3.7|4.5|m|VGS = 10V, ID = 43A|
|es|rs|ts|ID|Is|I|
|a|VGS(th)|Gate Threshold Volta|I|ge|2.0|(OU|–––|4.0|V|VDS = VGS, ID = 250µA|
|IDSS|Drain-to-Source Leakage Current|––––––|––––––|250 20|µA|VVDSDS|== 100V,V 100 V, VGSGS== 0V,T 0V J|=125°C|
|eeeece|er|ees|ee|
|Gate-to-Source Forward Leakage|–––|–––|100|VGS|= 20V|
|aS|IGSS|a|Gate-to-Source Reverse Leakage|————|—|——|–––|fT—|–––|—————————|-100|nA|PO|VGS|=|-20V|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|es|gfs|Forward Trans conductance|I|260|I|–––|I|–––|S|(|VDS|= 50V, ID|= 43A|
|ee|Qg|nn|Total Gate Charge|–––|190|290|ID = 43A|
|es|Qgs|nD|Gate-to-Source Charge|–––|I|I|40|–––|nC|VDS = 50V|
|eS|Qgd|Gate-to-Drain Charge|–––|49|–––|VGS = 10V |
|es|RG|nS|Internal Gate Resistance|–––|I|1.3|–––||
|a|td(on)|en|Turn-On Delay Time|–––|IID I|24|–––|(I|VDD = 65V|
|a|tr|es|Rise Time|–––|58|–––|ID = 43A|
|ns|
|ee|td(off)|Turn-Off Delay Time|Ss|–––|81|–––|RG= 2.6|
|tf|Fall Time|–––|71|–––|VGS = 10V |
|eeI|
|ee|Ciss|Input Capacitance|–––|9540 –––|VGS = 0V|
|ee|Coss|Output Capacitance|–––|680|–––|VDS = 50V|
|es|Crss|Reverse Transfer Capacitance|–––|300|–––|pF|ƒ = 1.0MHz|
|Coss eff. (ER)|Effective Output Capacitance (Energy Related) –––|760|–––|VGS=0V,VDS= 0V to 80V |
|esIs|
|ee|Coss eff. (TR)|rs|Effective Output Capacitance (Time Related)|RN|–––|OD|1120 –––|(OUND|rere|VGS = 0V, VDS = 0V to 80V |
**----- End of picture text -----**
**==> picture [546 x 186] intentionally omitted <==**
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|||||||||
|---|---|---|---|---|---|---|---|
|Source-Drain Ratings and Characteristics|
|PC|Parameter|Min.|Typ. Max.|Units|Conditions|
|Continuous Source Current|MOSFET symbol|
|IS|(Body Diode)|–––|–––|72|showing the|
|A|
|Pulsed Source Current|integral reverse|
|+},|ISM|(Body Diode)|–––|–––|290|>|p-n junction diode.|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ = 25°C,IS = 43A,VGS = 0V |
|Ssa|OO|OS|
|–––|50|75|
|trr|Reverse Recovery Time|ns|[T][J][ = 25°C ]|
|aa|–––|ee|60|90|TJ = 125°C|
|V|R|= 85V|
|–––|100|150|TJ = 25°C|
|Qrr|Reverse Recovery Charge|nC|I|F|= 43A|
|a|Ff|–––|140|210|||TJ = 125°C|di/dt= 100A/µs|
|a|IRRM|Reverse Recovery Current|–––|3.5|–––|A|TJ = 25°C|
|ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
|es(tt|
**----- End of picture text -----**
## **Notes:**
> Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.077mH, RG = 50, IAS = 43A, VGS =10V. Part not recommended for use above this value.
- ISD 43A, di/dt 1600A/µs, VDD V(BR)DSS, TJ 175°C.
- Pulse width 400µs; duty cycle 2%.
- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
- R is measured at TJ approximately 90°C.
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IRFI4110GPbF
**==> picture [545 x 729] intentionally omitted <==**
**----- Start of picture text -----**
1000 1000
TOP VGS15V10V Tj = 25°C60µs PULSE WIDTH TOP VGS 15V10V Tj = 175 60µs PULSE WIDTH °C
5.5V 5.5V
5.0V 5.0V
4.7V 4.7V
4.5V 4.5V
100 4.2V 4.2V
BOTTOM 4.0V BOTTOM 4.0V
100
10
4.0V
1 = 4.0V 10 Jt.=
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics
1000
3.0
VDS = 25V ID = 72A
60µs PULSE WIDTH VGS = 10V
; 2.5 TUL,
100
ge TJ = 175°C T J = 25°C 2.0 litaneet
10 1.5
See] 1.0 Het
1.0
2 Esa 3 4 5 6 0.5 PePELLEEEE
-60 -40 -20 0 20 40 60 80 100 120 140160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature
12.0
100000
VGS = 0V, f = 1 MHZ ID= 43A
Ciss = Cgs + Cgd, Cds SHORTED
C rss = C gd 10.0 V DS = 80V
Coss = Cds + Cgd VDS= 50V
8.0
10000 Ciss
6.0
C oss
4.0
1000
Crss
Scr tl 2.0 p=
Baia 0.0 A
100
0 40 80 120 160 200 240
1 10 100
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 2017-04-27
rs
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
**----- End of picture text -----**
IRFI4110GPbF
**==> picture [496 x 663] intentionally omitted <==**
**----- Start of picture text -----**
1000 10000
OPERATION IN THIS AREA
1000 LIMITED BY R DS(on)
100 T J = 175°C
100 100µsec
10msec
1msec
me TJ = 25°C 10 Bae DC
10
1 Tc = 25°C
Tj = 175°C
V GS = 0V Single Pulse
1.0 0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
80 125
Id = 5mA
70 120
a [TTT
60
115
pet SRRERREED=a0
50
110
40 ee SRRREDZA0000
105
30 SEE RSIS ATA
100
20 SEEN ATT
95
10
CETTE ALAA
PEF 90 EEE
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
25 50 75 100 125 150 175
TJ , Temperature ( °C )
TC , Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
4.0 300
ID
3.5
TOP 17A
250
22A
3.0
BOTTOM 43A
200 ALLL Kt
2.5
2.0 150 NEE
1.5
100
1.0 NAT
50
0.5
WISSEL
0.0 JU EPPRSSaD
0
-20 0 20 40 60 80 100 120
25 50 75 100 125 150 175
VDS, Drain-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)
ID, Drain Current (A)
EAS , Single Pulse Avalanche Energy (mJ)
ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
**----- End of picture text -----**
**Fig. 7.** Typical Source-to-Drain Diode Forward Voltage
**Fig. 9.** Maximum Drain Current vs. Case Temperature
**Fig. 11.** Typical COSS Stored Energy **Fig 12.** Maximum Avalanche Energy vs. Drain Current 4 2017-04-27 ~~—_——— = —.~~
~~Cinfineon~~
IRFI4110GPbF ~~LLL~~
**==> picture [443 x 428] intentionally omitted <==**
**----- Start of picture text -----**
10
1 TTT D = 0.50
Seagrasses 0.20
aD 0.10 neee atFOCeeeetl Ri (°C/W) i (sec)
0.1 0.010.020.05 J J11 R1 R1 2 R 2 2 R2 R 3 3 R33 R4 4 R4 4 R5 5R 5 5 C C 0.0371 0.1159 0.2585 0.000005 0.000067 0.003980
Ci= iRi 0.9745 0.228341
0.01 All SINGLE PULSE Ci= iRi 1.0740 3.049000
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 BLATT 1E-005 0.0001 GN 0.001 Uh 0.01 A 0.1 BSa 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
100 pulsewidth, tav, assuming Tj = 150°C and
ry pe Tstart =25°C (Single Pulse)
me yy
10 SRE 0.01 eel ctl ill
0.05
1 ae 0.10 aaa! ayTHll
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
PT
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 TTI 1.0E-02 ETT 1.0E-01 1.0E+00
tav (sec)
thJC ) °C/W
Thermal Response ( Z
Avalanche Current (A)
**----- End of picture text -----**
**Fig 14.** Single Avalanche Event: Pulse Current vs. Pulse Width
**==> picture [204 x 195] intentionally omitted <==**
**----- Start of picture text -----**
80
TOP Single Pulse
70 BOTTOM 1.0% Duty Cycle
ID = 43A
60 Naa
50 PNET
40 PEN TTT TTT
30 PL EET TET TT
EN ETT ET TT
20 PTETNG TET TT
10
NETEN ETT
PPADS
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
EAR , Avalanche Energy (mJ)
**----- End of picture text -----**
**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com)**
- 1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
- PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
**Fig 15.** Maximum Avalanche Energy vs. Temperature
2017-04-27
5
IRFI4110GPbF
**==> picture [204 x 195] intentionally omitted <==**
**----- Start of picture text -----**
4.0
3.5
EST
3.0
SSB
2.5 I D = 250µA
I D = 1.0mA AX
2.0 I D = 1.0A
AaaNNEE
1.5 TLE NN,
1.0
-75 CCE -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
VGS(th), Gate threshold Voltage (V)
**----- End of picture text -----**
**==> picture [205 x 196] intentionally omitted <==**
**----- Start of picture text -----**
25
IF = 29A
VR = 85V
20 I=
TJ = 25°C
TJ = 125°C
15 Rea
10 AZ
5 ara/
0
PEE TT
0 200 400 600 800 1000
diF /dt (A/µs)
IRR (A)
**----- End of picture text -----**
**Fig 16.** Threshold Voltage vs. Temperature
**Fig 17.** Typical Recovery Current vs. dif/dt
**==> picture [205 x 196] intentionally omitted <==**
**----- Start of picture text -----**
30
IF = 43A
25 V R = 85V
tT.
TJ = 25°C
2015 T J = 125°C nmeEze
10 eae
coe
5
at | |
0 PLL
0 200 400 600 800 1000
diF /dt (A/µs)
IRR (A)
**----- End of picture text -----**
**==> picture [207 x 196] intentionally omitted <==**
**----- Start of picture text -----**
1400
IF = 29A
1200 V R = 85V
TJ = 25°C
1000 T J = 125°C TTF
800
| Y
600
ee
400
Sa
200 Eeaaa
0
0 200 400 600 800 1000
diF /dt (A/µs)
QRR (nC)
**----- End of picture text -----**
**Fig 18.** Typical Recovery Current vs. dif/dt
**Fig 19.** Typical Stored Charge vs. dif/dt
**==> picture [206 x 196] intentionally omitted <==**
**----- Start of picture text -----**
1600
IF = 43A
1400 | | |
VR = 85V
1200 T J = 25°C | | |
TJ = 125°C
rs
1000
800
Pt | | eZ
600
400 | |tly
200 | Le ||
pee]
0 |
0 200 400 600 800 1000
diF /dt (A/µs)
QRR (nC)
**----- End of picture text -----**
**Fig 20.** Typical Stored Charge vs. dif/dt 6 2017-04-27 ~~=_—-_~~
~~Cinfi~~
IRFI4110GPbF ~~Ld~~
**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs
**==> picture [141 x 99] intentionally omitted <==**
**----- Start of picture text -----**
15V
VDS L DRIVER
—w-
RG D.U.T +
- [V][DD]
IAS
20V
ae tp Y 0.01
\—
**----- End of picture text -----**
**==> picture [157 x 110] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS
< tp > |
IAS
**----- End of picture text -----**
**Fig 22a.** Unclamped Inductive Test Circuit
**Fig 22b.** Unclamped Inductive Waveforms
**Fig 23a.** Switching Time Test Circuit
**Fig 23b.** Switching Time Waveforms
**==> picture [173 x 140] intentionally omitted <==**
**----- Start of picture text -----**
Id
Vds i
Vgs
I
Vgs(th) | |
>t
Qgs1 Qgs2 Qgd Qgodr
**----- End of picture text -----**
**Fig 24a.** Gate Charge Test Circuit
**Fig 24b.** Gate Charge Waveform
2017-04-27
7
## ~~————————~~
## IRFI4110GPbF
**TO-220 Full-Pak Package Outline** (Dimensions are shown in millimeters (inches))
## **TO-220 Full-Pak Part Marking Information**
TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to website at http://www.irf.com/package/
8
2017-04-27
## IRFI4110GPbF ~~Cinfineon LLL~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] **Moisture Sensitivity Level** TO-220 Full-Pak N/A **RoHS Compliant** Yes ~~—————~~ † Applicable version of JEDEC standard at the time of product release.
## **Revision History**
|**Date**||**Comments**|
|---|---|---|
|||Changed datasheet with Infineon logo - all pages.|
|04/27/2017||Corrected Package Outline on page 8.|
|||Corrected fig 19 & 20 –Y axis title from “A” to “nC” on page 6.|
|||Added disclaimer on lastpage.|
## **Trademarks of Infineon Technologies AG**
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
## **Other Trademarks**
All referenced product or service names and trademarks are the property of their respective owners.
## **IMPORTANT NOTICE**
**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.**
The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
9
2017-04-27
## Links
- [View this product on Novapart](https://novapart.co/products/IRFI4110GPBF/power-mosfet-n-channel-100-v-72-a-4500-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfi4110gpbf/mosfet-n-ch-100v-72a-to-220fp/dp/1888169)
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